Infineon Technologies CY7C1518KV18-333BZC

Overview

CY7C1518KV18-333BZC from Cypress Semiconductor is a 72-Mbit (4M × 18) synchronous DDR-II SRAM with two-word burst architecture, 333 MHz input clock, double-data-rate interface delivering 666 MHz effective data rate, and 1.8 V core supply with HSTL I/O. It serves as high-bandwidth buffer memory in network packet processors requiring precise timing alignment via echo clocks (CQ/CQ) and dual output clocks (C/C).

For engineers reviewing the CY7C1518KV18-333BZC datasheet, CY7C1518KV18-333BZC pinout, CY7C1518KV18-333BZC application, or CY7C1518KV18-333BZC equivalent, key selection criteria include read latency configuration (1-cycle vs. 1.5-cycle via DOFF), burst-addressing behavior, HSTL drive voltage range (1.4 V–VDD), JTAG 1149.1 test support, and FBGA-165 package thermal/mechanical constraints.

Technical Context

This SRAM implements a synchronous pipelined architecture with internal burst counter driven by A0, latching addresses on alternate rising edges of K/K clocks and registering write data on both K and K edges. Read data is edge-aligned to C/C (or K/K in single-clock mode), with echo clocks CQ/CQ phase-synchronized to output clocks for deterministic capture at the controller.

The device supports programmable output impedance via ZQ pin (0.2 × RQ calibration resistor to GND), operates with 1.8 V core and flexible VDDQ (1.4–1.8 V), and integrates a PLL for accurate data placement. DOFF pin selects between DDR-I mode (1-cycle read latency, DOFF = LOW) and DDR-II mode (1.5-cycle read latency, DOFF = HIGH).

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Compared with AS7C3256A-15JCIN and IS61WV102418BLL-10BLI, CY7C1518KV18-333BZC delivers 6.6× higher effective bandwidth, deterministic DDR timing via echo clocks, and production-ready testability via JTAG-making it the sole viable option for new high-speed packet-processing designs.

Availability

CY7C1518KV18-333BZC is available at Aetrix Electronics and suitable for network packet processors, telecom line cards, baseband ASIC subsystems, and industrial real-time controllers requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for CY7C1518KV18-333BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1518KV18 belongs to Cypress's DDR-II synchronous SRAM product line, engineered specifically for deterministic, high-bandwidth buffering in packet-switched infrastructure where echo-clock synchronization and burst efficiency are critical.

FAQ

What is the function of the DOFF pin on CY7C1518KV18-333BZC?

The DOFF pin selects read latency mode: when asserted LOW, the device operates in DDR-I mode with 1-cycle read latency; when asserted HIGH, it enters DDR-II mode with 1.5-cycle read latency. This setting directly affects controller pipeline staging and must be fixed at power-up via static biasing-it cannot be changed dynamically during operation.

Can CY7C1518KV18-333BZC operate with only K clock (no K, C, or C signals)?

Yes-CY7C1518KV18-333BZC supports single-clock mode where K alone drives all synchronous inputs and outputs. In this mode, K substitutes for K, and K substitutes for both C and C. However, echo clocks CQ/CQ remain active and referenced to K, preserving source-synchronous capture capability without requiring complementary clock routing.

How is output impedance calibrated using the ZQ pin?

ZQ connects to an external precision resistor (typically 240 Ω) tied to ground. During initialization, the device measures this resistance and configures its DQ and CQ output drivers to deliver 0.2 × RQ (e.g., 48 Ω) output impedance. If ZQ is tied to VDDQ instead, the device defaults to minimum impedance mode (~30 Ω), which may require external series termination.

Does CY7C1518KV18-333BZC support depth expansion with other identical devices?

Yes-depth expansion is supported using multiple CY7C1518KV18-333BZC devices sharing K/K, C/C, CQ/CQ, and control signals, with address bits above A21 decoded externally to select individual devices. The burst counter remains local to each device, so expanded arrays retain two-word burst behavior per chip without additional controller logic.