Infineon Technologies CY7C1518KV18-333BZI

Overview

CY7C1518KV18-333BZI from Cypress Semiconductor is a 72-Mbit (4M × 18) DDR-II synchronous pipelined SRAM with two-word burst architecture, 333 MHz clock frequency, 1.8 V core supply, HSTL I/O, and 165-ball FBGA (13 × 15 × 1.4 mm) package. It delivers 666 MT/s data transfer via double data rate interface and supports configurable 1.5-cycle or 1-cycle read latency via DOFF pin for high-bandwidth buffering in network packet processors.

For engineers reviewing the CY7C1518KV18-333BZI datasheet, CY7C1518KV18-333BZI pinout, CY7C1518KV18-333BZI application, or CY7C1518KV18-333BZI equivalent, key selection factors include DDR-II timing compliance, echo clock (CQ/CQ) synchronization capability, burst-addressed 18-bit dual-word access, and JTAG 1149.1 test port integration for system-level validation.

Technical Context

The device implements a synchronous pipelined architecture with independent K/K input clocks for address/data capture and C/C output clocks for data launch, enabling precise DDR timing control. Its internal burst counter uses A0 to generate sequential 18-bit word addresses, supporting two-word bursts without external address incrementing.

Read latency is programmable: 1.5 cycles when DOFF = HIGH (DDR-II mode), or 1 cycle when DOFF = LOW (DDR-I compatibility mode). All synchronous inputs pass through edge-triggered registers clocked by K/K, while outputs are registered to C/C (or K/K in single-clock mode), ensuring deterministic setup/hold margins at 333 MHz.

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR-II SRAM applications.

Compared with AS7C35128PFS-333BIN and IS61WV102418BLL-333BLI, CY7C1518KV18-333BZI uniquely combines DDR-II timing, echo clock synchronization, and programmable latency in a 72-Mbit density-enabling robust, scalable high-speed buffering without external deskew circuitry or controller-level timing compensation.

Availability

CY7C1518KV18-333BZI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, test equipment pattern storage, and high-speed data acquisition requiring stable component supply and long-term industrial availability.

Supply support for CY7C1518KV18-333BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for embedded systems, with expertise in SRAM, Flash, PSoC, and USB controllers.

CY7C1518KV18 belongs to Cypress's DDR-II synchronous SRAM product line, engineered specifically for applications demanding deterministic low-latency, high-throughput memory access in networking, test, and instrumentation systems.

FAQ

What is the function of the DOFF pin on CY7C1518KV18-333BZI?

The DOFF (Data Output OFFset) pin configures read latency mode: when asserted HIGH, it enables DDR-II operation with 1.5-cycle latency; when LOW, it reverts to DDR-I–compatible 1-cycle latency. This pin directly controls internal timing paths and must be set during power-up initialization to match the host controller's expected timing model.

Can CY7C1518KV18-333BZI operate without external C and C clocks?

Yes - the device supports single-clock mode using only K and K for both input capture and output launch. In this mode, C and C are unused, and CQ/CQ are generated relative to K/K. However, echo clock functionality and optimal deskew performance require C/C connection, so single-clock mode trades timing margin for reduced clock routing complexity.

How does ZQ calibration affect signal integrity?

ZQ calibration adjusts the output driver impedance of DQ[17:0] and CQ/CQ pins to match the system data bus (typically 50 Ω). By connecting an external resistor RQ from ZQ to ground, the device sets output impedance to 0.2 × RQ - e.g., 250 Ω resistor yields 50 Ω drive strength - reducing reflections and improving eye diagram margins at 666 MT/s.

Is CY7C1518KV18-333BZI pin-compatible with CY7C1520KV18-333BZI?

No - although both use the same 165-ball FBGA package, their pinouts differ significantly: CY7C1518KV18 has DQ[17:0], BWS[1:0], and 22 address lines (A[21:0]), while CY7C1520KV18 has DQ[35:0], BWS[3:0], and 21 address lines (A[20:0]). Direct substitution requires PCB redesign and firmware adaptation due to data width and control signal mismatches.