Infineon Technologies CY7C1518KV18-333BZXC
- Part No.:
- CY7C1518KV18-333BZXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1518KV18-333BZXC.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:406
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Product details
Overview
CY7C1518KV18-333BZXC from Cypress Semiconductor is a 72-Mbit (4M × 18) synchronous DDR-II SRAM with two-word burst architecture, 333 MHz clock frequency, double-data-rate interface delivering 666 MT/s effective throughput, and 1.8 V core supply with HSTL I/O. It operates in pipelined read mode with 1.5-cycle latency when DOFF = HIGH and 1-cycle latency when DOFF = LOW, targeting high-bandwidth buffering in network packet processors and telecom line cards.
For engineers reviewing the CY7C1518KV18-333BZXC datasheet, CY7C1518KV18-333BZXC pinout, CY7C1518KV18-333BZXC application, or CY7C1518KV18-333BZXC equivalent, key selection criteria include DDR-II timing compliance, echo clock (CQ/CQ) support for source-synchronous data capture, dual-K/K input clocking for precise write strobing, and FBGA-165 package compatibility with high-density PCB layouts.
Technical Context
The device implements a synchronous pipelined architecture where all address, control, and data inputs are registered on rising edges of complementary K/K clocks. Read data is driven synchronously on C/C output clocks (or K/K in single-clock mode), with echo clocks CQ/CQ phase-aligned to C/C to enable controller-side deskewing.
Burst addressing is controlled by A0 feeding a 1-bit counter that generates sequential 18-bit word addresses per access. Write operations use on-chip self-timed logic, while byte write select signals BWS0/BWS1 allow independent 9-bit byte updates without disturbing adjacent data - critical for partial-word packet header modifications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 72 Mbit (4M × 18 organization), enabling 8 MB of fast buffer memory per device |
| Max Clock Frequency | 333 MHz K/K input clock, supporting 666 MT/s DDR data rate for high-throughput streaming |
| Read Latency | 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW), directly affecting pipeline depth in real-time systems |
| I/O Voltage | 1.8 V core with HSTL-compatible I/O (1.4–1.8 V VDDQ), interoperable with 1.5 V or 1.8 V memory controllers |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm), optimized for signal integrity and thermal dissipation in multi-SRAM stacks |
| Output Drive | Variable-drive HSTL outputs with ZQ calibration, allowing impedance matching to 50 Ω system traces |
| JTAG Support | IEEE 1149.1-compliant TAP for boundary scan testing and production validation |
Pinout & Package
Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, with 0.8 mm ball pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[17:0] | Synchronous bidirectional data bus | Shares pins for read output and write input; driven on C/C rising edges during reads, sampled on K/K rising edges during writes |
| K / K | Complementary input clocks | Used for all synchronous input registration (address, R/W, LD, BWS); defines timing reference for write setup/hold |
| C / C | Complementary output data clocks | Control timing of Q[17:0] output edges; used with CQ/CQ for flight-time deskew across multiple SRAMs |
| CQ / CQ | Echo clocks | Free-running, phase-aligned copies of C/C; simplify controller design by eliminating need for separate capture clock generation |
| DOFF | Read latency mode select | LOW enables DDR-I–compatible 1-cycle latency; HIGH enables DDR-II 1.5-cycle latency for improved timing margin |
| ZQ | Output impedance calibration input | Connects to external 240 Ω resistor to ground to calibrate DQ/CQ drive strength to match 50 Ω PCB trace impedance |
Key Features
| Feature | Design Value |
|---|---|
| Two-word burst architecture | Reduces external address bus toggling by 50% versus single-word SRAMs, lowering EMI and controller pin count |
| Programmable read latency (1 or 1.5 cycles) | Enables dynamic trade-off between throughput and timing closure in FPGA-based memory controllers |
| On-die impedance calibration (ZQ) | Eliminates need for external termination resistors and supports ±15% drive strength adjustment across voltage/temperature |
| Phase-locked loop (PLL) timing engine | Ensures sub-100 ps skew between internal clock domains, meeting tight setup/hold windows at 333 MHz |
| Byte-write select (BWS0/BWS1) | Allows independent update of 9-bit subwords without read-modify-write cycles, essential for packet header editing |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing and forwarding variable-length Ethernet frames in Layer 2 switches with cut-through switching. IC Role / Device Role / Timing Role: High-speed, low-latency buffer providing deterministic 1.5-cycle read response for frame header inspection and forwarding decisions. Use Value: Two-word burst reduces address bus activity by half, lowering power and routing congestion in dense switch fabric designs. |
Use Scenario: Temporary storage of voice-over-IP (VoIP) payload buffers in TDM-to-Packet gateways. IC Role / Device Role / Timing Role: Synchronous DDR-II SRAM acting as jitter buffer with precise 333 MHz clock alignment to DSP subsystem timing. Use Value: Echo clocks CQ/CQ eliminate inter-SRAM skew, enabling reliable 666 MT/s data capture across multi-device memory banks. |
| FPGA-Based Protocol Accelerators | High-Speed Test Equipment Memory |
|
Use Scenario: Offloading TCP/IP checksum calculation and segmentation in PCIe-connected acceleration cards. IC Role / Device Role / Timing Role: Burst-capable SRAM interfacing directly to FPGA fabric via dedicated DDR I/O banks with matched trace lengths. Use Value: Variable-drive HSTL outputs calibrated via ZQ ensure signal integrity at 666 MT/s across 10+ cm FR4 traces. |
Use Scenario: Capturing high-resolution analog waveform samples at >500 MS/s in automated test equipment (ATE) digitizers. IC Role / Device Role / Timing Role: Low-latency memory staging buffer synchronized to sampling clock via K/K inputs and echo-clocked readout. Use Value: 1.5-cycle latency mode provides extra timing margin for FPGA-based sample alignment logic under process/voltage variation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR-II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C3256A-15JIN | Asynchronous 256K × 16 SRAM, no DDR interface, 15 ns access, 3.3 V only | Lacks burst, echo clocks, and DDR timing; suitable only for legacy non-pipelined controllers | Select only if system lacks DDR clocking infrastructure and bandwidth demand ≤ 66 MHz |
| IS61WV102418BLL-10BLI | Synchronous 1M × 18 SRAM, single-data-rate, 10 ns cycle time, 3.3 V/2.5 V I/O | No CQ/CQ echo clocks, no DOFF latency control, lower max frequency (100 MHz) | Choose when cost sensitivity outweighs bandwidth needs and controller cannot support DDR-II timing constraints |
Compared with AS7C3256A-15JIN and IS61WV102418BLL-10BLI, CY7C1518KV18-333BZXC delivers 6.6× higher effective bandwidth via DDR-II and eliminates board-level clock deskew complexity through integrated echo clocks - critical for systems requiring deterministic sub-ns timing alignment.
Availability
CY7C1518KV18-333BZXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, FPGA-based protocol accelerators, and high-speed test equipment requiring stable component supply and long-term industrial availability.
Supply support for CY7C1518KV18-333BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable system-on-chip solutions for industrial, automotive, and communications markets.
CY7C1518KV18 belongs to Cypress's DDR-II synchronous SRAM product line, engineered specifically for high-throughput, low-latency buffering in packet-switched infrastructure where deterministic timing and signal integrity at >500 MT/s are mandatory.
FAQ
What is the function of the DOFF pin on CY7C1518KV18-333BZXC?
The DOFF (Data Output OFF) pin selects read latency mode: when asserted HIGH, it enables DDR-II operation with 1.5-cycle latency for improved timing margin; when LOW, it reverts to DDR-I–compatible 1-cycle latency. This setting is sampled synchronously on the rising edge of K and remains active until changed, directly impacting controller pipeline configuration.
Can CY7C1518KV18-333BZXC operate without external C and C clocks?
Yes - the device supports single-clock mode using only K and K for both input registration and output timing. In this mode, read data is driven on K/K rising edges, and CQ/CQ are generated relative to K/K instead of C/C. However, echo-clock deskew capability is lost, limiting maximum reliable trace length and system scalability.
How does ZQ calibration affect signal integrity in CY7C1518KV18-333BZXC?
ZQ calibration adjusts the output driver strength of DQ, CQ, and CQ pins to match a 240 Ω external resistor, resulting in ~50 Ω effective output impedance. This minimizes reflections on 50 Ω PCB traces, reducing eye diagram degradation and enabling stable 666 MT/s operation across temperature and voltage variations without external termination.
Is CY7C1518KV18-333BZXC pin-compatible with CY7C1520KV18-333BZXC?
No - although both share the same 165-ball FBGA package footprint, their pinouts differ significantly. CY7C1518KV18 uses DQ[17:0], BWS0/BWS1, and 22 address lines (A[21:0]), while CY7C1520KV18 uses DQ[35:0], BWS0–BWS3, and 21 address lines (A[20:0]). Interchange requires PCB redesign and firmware adaptation.
CY7C1518KV18-333BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Last Time Buy
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 333 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1518KV18-333BZXC FAQ
1.How can I place an order for CY7C1518KV18-333BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1518KV18-333BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1518KV18-333BZXC reliable?
The price and inventory of CY7C1518KV18-333BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1518KV18-333BZXC is usually 5 days.
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Once your CY7C1518KV18-333BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1518KV18-333BZXC?
For technical support, including CY7C1518KV18-333BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1518KV18-333BZXC requirements.
6.How does Aetrix verify that CY7C1518KV18-333BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1518KV18-333BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1518KV18-333BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1518KV18-333BZXC?
All CY7C1518KV18-333BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1518KV18-333BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1518KV18-333BZXC part is unused and in its original packaging.
Return procedure for CY7C1518KV18-333BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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