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Infineon Technologies CY7C1518KV18-333BZXC

Part No.:
CY7C1518KV18-333BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1518KV18-333BZXC.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:406

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Product details

Overview

CY7C1518KV18-333BZXC from Cypress Semiconductor is a 72-Mbit (4M × 18) synchronous DDR-II SRAM with two-word burst architecture, 333 MHz clock frequency, double-data-rate interface delivering 666 MT/s effective throughput, and 1.8 V core supply with HSTL I/O. It operates in pipelined read mode with 1.5-cycle latency when DOFF = HIGH and 1-cycle latency when DOFF = LOW, targeting high-bandwidth buffering in network packet processors and telecom line cards.

For engineers reviewing the CY7C1518KV18-333BZXC datasheet, CY7C1518KV18-333BZXC pinout, CY7C1518KV18-333BZXC application, or CY7C1518KV18-333BZXC equivalent, key selection criteria include DDR-II timing compliance, echo clock (CQ/CQ) support for source-synchronous data capture, dual-K/K input clocking for precise write strobing, and FBGA-165 package compatibility with high-density PCB layouts.

Technical Context

The device implements a synchronous pipelined architecture where all address, control, and data inputs are registered on rising edges of complementary K/K clocks. Read data is driven synchronously on C/C output clocks (or K/K in single-clock mode), with echo clocks CQ/CQ phase-aligned to C/C to enable controller-side deskewing.

Burst addressing is controlled by A0 feeding a 1-bit counter that generates sequential 18-bit word addresses per access. Write operations use on-chip self-timed logic, while byte write select signals BWS0/BWS1 allow independent 9-bit byte updates without disturbing adjacent data - critical for partial-word packet header modifications.

Key Specifications

Parameter Value and Actual Design Meaning
Density 72 Mbit (4M × 18 organization), enabling 8 MB of fast buffer memory per device
Max Clock Frequency 333 MHz K/K input clock, supporting 666 MT/s DDR data rate for high-throughput streaming
Read Latency 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW), directly affecting pipeline depth in real-time systems
I/O Voltage 1.8 V core with HSTL-compatible I/O (1.4–1.8 V VDDQ), interoperable with 1.5 V or 1.8 V memory controllers
Package 165-ball FBGA (13 × 15 × 1.4 mm), optimized for signal integrity and thermal dissipation in multi-SRAM stacks
Output Drive Variable-drive HSTL outputs with ZQ calibration, allowing impedance matching to 50 Ω system traces
JTAG Support IEEE 1149.1-compliant TAP for boundary scan testing and production validation

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, with 0.8 mm ball pitch.

Pin/Terminal Circuit Role Design Meaning
DQ[17:0] Synchronous bidirectional data bus Shares pins for read output and write input; driven on C/C rising edges during reads, sampled on K/K rising edges during writes
K / K Complementary input clocks Used for all synchronous input registration (address, R/W, LD, BWS); defines timing reference for write setup/hold
C / C Complementary output data clocks Control timing of Q[17:0] output edges; used with CQ/CQ for flight-time deskew across multiple SRAMs
CQ / CQ Echo clocks Free-running, phase-aligned copies of C/C; simplify controller design by eliminating need for separate capture clock generation
DOFF Read latency mode select LOW enables DDR-I–compatible 1-cycle latency; HIGH enables DDR-II 1.5-cycle latency for improved timing margin
ZQ Output impedance calibration input Connects to external 240 Ω resistor to ground to calibrate DQ/CQ drive strength to match 50 Ω PCB trace impedance

Key Features

Feature Design Value
Two-word burst architecture Reduces external address bus toggling by 50% versus single-word SRAMs, lowering EMI and controller pin count
Programmable read latency (1 or 1.5 cycles) Enables dynamic trade-off between throughput and timing closure in FPGA-based memory controllers
On-die impedance calibration (ZQ) Eliminates need for external termination resistors and supports ±15% drive strength adjustment across voltage/temperature
Phase-locked loop (PLL) timing engine Ensures sub-100 ps skew between internal clock domains, meeting tight setup/hold windows at 333 MHz
Byte-write select (BWS0/BWS1) Allows independent update of 9-bit subwords without read-modify-write cycles, essential for packet header editing

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing and forwarding variable-length Ethernet frames in Layer 2 switches with cut-through switching.

IC Role / Device Role / Timing Role: High-speed, low-latency buffer providing deterministic 1.5-cycle read response for frame header inspection and forwarding decisions.

Use Value: Two-word burst reduces address bus activity by half, lowering power and routing congestion in dense switch fabric designs.

Use Scenario: Temporary storage of voice-over-IP (VoIP) payload buffers in TDM-to-Packet gateways.

IC Role / Device Role / Timing Role: Synchronous DDR-II SRAM acting as jitter buffer with precise 333 MHz clock alignment to DSP subsystem timing.

Use Value: Echo clocks CQ/CQ eliminate inter-SRAM skew, enabling reliable 666 MT/s data capture across multi-device memory banks.

FPGA-Based Protocol Accelerators High-Speed Test Equipment Memory

Use Scenario: Offloading TCP/IP checksum calculation and segmentation in PCIe-connected acceleration cards.

IC Role / Device Role / Timing Role: Burst-capable SRAM interfacing directly to FPGA fabric via dedicated DDR I/O banks with matched trace lengths.

Use Value: Variable-drive HSTL outputs calibrated via ZQ ensure signal integrity at 666 MT/s across 10+ cm FR4 traces.

Use Scenario: Capturing high-resolution analog waveform samples at >500 MS/s in automated test equipment (ATE) digitizers.

IC Role / Device Role / Timing Role: Low-latency memory staging buffer synchronized to sampling clock via K/K inputs and echo-clocked readout.

Use Value: 1.5-cycle latency mode provides extra timing margin for FPGA-based sample alignment logic under process/voltage variation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR-II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C3256A-15JIN Asynchronous 256K × 16 SRAM, no DDR interface, 15 ns access, 3.3 V only Lacks burst, echo clocks, and DDR timing; suitable only for legacy non-pipelined controllers Select only if system lacks DDR clocking infrastructure and bandwidth demand ≤ 66 MHz
IS61WV102418BLL-10BLI Synchronous 1M × 18 SRAM, single-data-rate, 10 ns cycle time, 3.3 V/2.5 V I/O No CQ/CQ echo clocks, no DOFF latency control, lower max frequency (100 MHz) Choose when cost sensitivity outweighs bandwidth needs and controller cannot support DDR-II timing constraints

Compared with AS7C3256A-15JIN and IS61WV102418BLL-10BLI, CY7C1518KV18-333BZXC delivers 6.6× higher effective bandwidth via DDR-II and eliminates board-level clock deskew complexity through integrated echo clocks - critical for systems requiring deterministic sub-ns timing alignment.

Availability

CY7C1518KV18-333BZXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, FPGA-based protocol accelerators, and high-speed test equipment requiring stable component supply and long-term industrial availability.

Supply support for CY7C1518KV18-333BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable system-on-chip solutions for industrial, automotive, and communications markets.

CY7C1518KV18 belongs to Cypress's DDR-II synchronous SRAM product line, engineered specifically for high-throughput, low-latency buffering in packet-switched infrastructure where deterministic timing and signal integrity at >500 MT/s are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1518KV18-333BZXC?

The DOFF (Data Output OFF) pin selects read latency mode: when asserted HIGH, it enables DDR-II operation with 1.5-cycle latency for improved timing margin; when LOW, it reverts to DDR-I–compatible 1-cycle latency. This setting is sampled synchronously on the rising edge of K and remains active until changed, directly impacting controller pipeline configuration.

Can CY7C1518KV18-333BZXC operate without external C and C clocks?

Yes - the device supports single-clock mode using only K and K for both input registration and output timing. In this mode, read data is driven on K/K rising edges, and CQ/CQ are generated relative to K/K instead of C/C. However, echo-clock deskew capability is lost, limiting maximum reliable trace length and system scalability.

How does ZQ calibration affect signal integrity in CY7C1518KV18-333BZXC?

ZQ calibration adjusts the output driver strength of DQ, CQ, and CQ pins to match a 240 Ω external resistor, resulting in ~50 Ω effective output impedance. This minimizes reflections on 50 Ω PCB traces, reducing eye diagram degradation and enabling stable 666 MT/s operation across temperature and voltage variations without external termination.

Is CY7C1518KV18-333BZXC pin-compatible with CY7C1520KV18-333BZXC?

No - although both share the same 165-ball FBGA package footprint, their pinouts differ significantly. CY7C1518KV18 uses DQ[17:0], BWS0/BWS1, and 22 address lines (A[21:0]), while CY7C1520KV18 uses DQ[35:0], BWS0–BWS3, and 21 address lines (A[20:0]). Interchange requires PCB redesign and firmware adaptation.

CY7C1518KV18-333BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Last Time Buy
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
333 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1518KV18-333BZXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1518KV18-333BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1518KV18-333BZXC reliable?

The price and inventory of CY7C1518KV18-333BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1518KV18-333BZXC is usually 5 days.

3.What payment methods are accepted for CY7C1518KV18-333BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1518KV18-333BZXC transactions.

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CY7C1518KV18-333BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1518KV18-333BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1518KV18-333BZXC?

For technical support, including CY7C1518KV18-333BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1518KV18-333BZXC requirements.

6.How does Aetrix verify that CY7C1518KV18-333BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1518KV18-333BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1518KV18-333BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1518KV18-333BZXC?

All CY7C1518KV18-333BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1518KV18-333BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1518KV18-333BZXC part is unused and in its original packaging.

Return procedure for CY7C1518KV18-333BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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