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Infineon Technologies CY7C1518V18-167BZC

Part No.:
CY7C1518V18-167BZC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1518V18-167BZC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,601

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Product details

Overview

CY7C1518V18 from Cypress Semiconductor is a 72-Mbit synchronous pipelined DDR-II SRAM configured as 4M × 18, operating at 167 MHz with 1.8 V core supply and HSTL I/O. It implements 2-word burst reads/writes synchronized to dual K/K input clocks and outputs data aligned to C/C or echo clocks CQ/CQ, targeting high-bandwidth buffering in network packet processors and telecom line cards.

For engineers reviewing the CY7C1518V18 datasheet, CY7C1518V18 pinout, CY7C1518V18 application, or CY7C1518V18 equivalent, key selection criteria include DDR-II timing compliance, 165-ball FBGA (15 × 17 × 1.4 mm) mechanical fit, 18-bit bidirectional data width, DLL-enabled data placement accuracy, and JTAG 1149.1 test port support for production validation.

Technical Context

The CY7C1518V18 uses a synchronous pipelined architecture with internal burst counter driven by A0, delivering two sequential 18-bit words per access. All synchronous inputs-address (A[21:0]), R/W, LD, and BWS[1:0]-are registered on rising edges of K and K clocks, ensuring precise setup/hold timing at 167 MHz.

Read data appears on DQ[17:0] aligned to rising edges of C/C or K/K, while echo clocks CQ/CQ are phase-matched to output data for simplified capture. The integrated Delay Lock Loop (DLL) dynamically compensates for process/voltage/temperature variation to maintain ±75 ps data-eye centering relative to CQ/CQ.

Key Specifications

Parameter Value and Actual Design Meaning
Density 72 Mbit (4M × 18 organization), enabling compact 18-bit-wide buffer storage without external width expansion
Max Clock Frequency 167 MHz K/K input clock, supporting sustained 334 MT/s effective throughput with DDR interface
Data Bus Width 18-bit bidirectional DQ[17:0], matching standard 18-bit datapaths in packet classification engines and TDM controllers
Core Supply 1.8 V VDD, reducing dynamic power vs. 3.3 V SRAMs while maintaining noise margin with HSTL-compatible I/O
I/O Standard HSTL Class I inputs and outputs with programmable drive strength and ZQ impedance calibration for ±10% bus termination accuracy
Package 165-ball FBGA (15 × 17 × 1.4 mm), compatible with standard 1.0 mm pitch PCB routing and thermal management for multi-SRAM stacks
Timing Architecture Internal DLL synchronizes CQ/CQ to output data edges, eliminating board-level skew compensation components in 167 MHz systems

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body height, RoHS-compliant, 0.8 mm ball pitch.

Pin/Terminal Circuit Role Design Meaning
DQ[17:0] Synchronous bidirectional data I/O Shares physical pins for read output and write input; tri-stated automatically when read deselected; driven on C/C rising edges during reads
A[21:0] Synchronous address input A0 feeds burst counter; A[21:1] selects 4M-word base address; all sampled on K/K rising edges
BWS[1:0] Active-low byte write select BWS0 enables DQ[8:0], BWS1 enables DQ[17:9]; allows partial 18-bit writes without read-modify-write overhead
K, K Positive/negative input clocks Rising edges latch all synchronous inputs (address, R/W, LD, BWS); define access initiation and write data capture timing
C, C Positive/negative output clocks Control timing of DQ[17:0] and CQ/CQ outputs; used for flight-time deskewing across multiple SRAMs on same bus
CQ, CQ Output echo clocks Free-running, DLL-aligned copies of C/C referenced to DQ[17:0] edges; enable source-synchronous data capture at controller
ZQ Impedance calibration reference Connects to external 240 Ω resistor to GND to calibrate DQ/CQ output driver impedance to 48 Ω ±10%
DOFF DLL disable control Pulling LOW disables DLL, reverting to fixed-delay output timing-used only for debug or low-power standby modes

Key Features

Feature Design Value
2-word DDR burst Reduces address bus toggling by 50% versus single-word SRAMs, lowering EMI and controller pin count in burst-oriented systems
DLL-based data alignment Maintains <±75 ps data-to-CQ skew across -40°C to +85°C, eliminating need for manual trace-length tuning in 167 MHz designs
HSTL I/O with ZQ calibration Enables impedance-matched 1.8 V signaling over >10 cm traces at 334 MT/s, supporting daisy-chained topologies without repeaters
JTAG 1149.1 test port Supports boundary-scan testing of SRAM interconnects and in-system programming of configuration registers during manufacturing
Variable-drive output buffers Four programmable drive strengths reduce simultaneous switching noise (SSN) when interfacing to FPGAs with limited I/O bank current capacity

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing ingress/egress packet headers and metadata in 10G Ethernet switch ASICs with 18-bit internal datapath width.

IC Role / Device Role / Timing Role: High-speed, low-latency shared buffer providing deterministic 2-cycle read/write access synchronized to ASIC's DDR clock domain.

Use Value: Eliminates glue logic for width adaptation and reduces ASIC pin count by 36% versus two 9-bit SRAMs, while DLL ensures timing closure at 167 MHz.

Use Scenario: Frame buffering in OC-192 SONET/SDH framer modules requiring 18-bit parallel access to time-division multiplexed data streams.

IC Role / Device Role / Timing Role: Synchronous burst memory acting as elastic store between serial framer and parallel backplane interface, clocked by recovered line clock.

Use Value: 2-word burst matches typical SONET STS-192 frame segmentation granularity, minimizing controller overhead and jitter accumulation.

Baseband Processing Cache Industrial Motion Controller FIFO

Use Scenario: Temporary storage of FFT coefficients and channel estimation results in LTE eNodeB baseband processing units.

IC Role / Device Role / Timing Role: Low-latency scratchpad memory accessed via FPGA DMA engine using K/K and C/C clock pairs for precise timing alignment.

Use Value: HSTL I/O and DLL support stable operation under RF noise conditions, while 1.8 V core reduces thermal load in dense RF front-end assemblies.

Use Scenario: Real-time position/velocity command buffering between motion controller CPU and servo drive interface in CNC machine tools.

IC Role / Device Role / Timing Role: Deterministic latency FIFO ensuring jitter-free command delivery to drives, with BWS[1:0] enabling partial updates without full word overwrite.

Use Value: 167 MHz operation sustains >300 k commands/sec throughput, and ZQ calibration maintains signal integrity across wide temperature swings in factory environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR-II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS61WV102418B 512K × 18 asynchronous SRAM, no DDR interface, no DLL, 15 ns access, 3.3 V only Lacks burst capability and clock synchronization; suitable only for non-pipelined, lower-speed control-plane buffering Select only if system lacks DDR clock infrastructure and tolerates 2× higher access latency
Microchip 21L1618 16M × 18 QDR-II+ SRAM, 333 MHz interface, differential clocks, 1.8 V, 165-ball FBGA Higher bandwidth but requires QDR protocol support and differential clock routing; no native ZQ calibration Prefer when >666 MT/s throughput is required and controller supports QDR-II+ command encoding

Compared with CY7C1518V18, the ISSI part trades DDR timing precision and burst efficiency for simplicity and cost in legacy systems, while the Microchip part delivers double the bandwidth at the expense of protocol complexity and layout constraints-making CY7C1518V18 optimal for balanced 167 MHz DDR-II integration.

Availability

CY7C1518V18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing cache, and industrial motion controller FIFO applications requiring stable component supply and long-term obsolescence planning.

Supply support for CY7C1518V18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, automotive, and industrial markets, with headquarters in San Jose, CA.

CY7C1518V18 belongs to Cypress's DDR-II synchronous SRAM product line, engineered specifically for deterministic-latency, high-throughput buffering in packet-switched and time-division multiplexed systems where DDR timing control and impedance stability are critical.

FAQ

What is the minimum supported input clock frequency for CY7C1518V18?

The CY7C1518V18 has no specified minimum clock frequency; it operates down to DC for static operation. However, DLL lock requires ≥10 MHz K/K input for stable phase alignment. Below this, DOFF must be asserted to bypass DLL, resulting in fixed-output delay timing per datasheet AC characteristics.

Can CY7C1518V18 operate in single-clock mode without C and C inputs?

Yes. When C and C are unconnected or tied to static logic levels, the device defaults to single-clock mode using K and K for both input latching and output timing. In this mode, CQ and CQ are generated relative to K/K, and data appears on DQ[17:0] aligned to K/K rising edges.

How does ZQ calibration affect signal integrity on the DQ bus?

ZQ calibration adjusts DQ[17:0] and CQ/CQ output driver impedance to match the PCB trace characteristic impedance (typically 48–50 Ω). With a 240 Ω resistor to ground, it achieves ±10% impedance accuracy, reducing reflection-induced eye closure and improving timing margin at 334 MT/s.

Is CY7C1518V18 pin-compatible with other devices in the CY7C15xxV18 family?

No. While all share the same 165-ball FBGA footprint, pin functions differ significantly: CY7C1516V18 uses NWS[1:0], CY7C1527V18 uses BWS0 only, and CY7C1520V18 adds BWS[3:0]. Address width, DQ count, and burst control signals are not interchangeable across variants.

CY7C1518V18-167BZC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
167 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1518V18-167BZC FAQ

1.How can I place an order for CY7C1518V18-167BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1518V18-167BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1518V18-167BZC reliable?

The price and inventory of CY7C1518V18-167BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1518V18-167BZC is usually 5 days.

3.What payment methods are accepted for CY7C1518V18-167BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1518V18-167BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1518V18-167BZC?

CY7C1518V18-167BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1518V18-167BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1518V18-167BZC?

For technical support, including CY7C1518V18-167BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1518V18-167BZC requirements.

6.How does Aetrix verify that CY7C1518V18-167BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1518V18-167BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1518V18-167BZC meets industry standards.

7.What is the process for return or replacement of CY7C1518V18-167BZC?

All CY7C1518V18-167BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1518V18-167BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1518V18-167BZC part is unused and in its original packaging.

Return procedure for CY7C1518V18-167BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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