Infineon Technologies CY7C1518V18-200BZC
- Part No.:
- CY7C1518V18-200BZC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1518V18-200BZC.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1518V18 from Cypress Semiconductor is a 72-Mbit synchronous pipelined DDR-II SRAM configured as 4M × 18, operating at 200 MHz with 1.8 V core supply and HSTL I/O. It implements 2-word burst reads/writes synchronized to dual K/K input clocks and outputs data aligned to C/C echo clocks (CQ/CQ), enabling precise timing in high-speed memory subsystems for network packet buffering and baseband processing.
For engineers reviewing the CY7C1518V18 datasheet, CY7C1518V18 pinout, CY7C1518V18 application, or CY7C1518V18 equivalent, key selection criteria include its 4M × 18 organization, 200 MHz maximum frequency, 165-ball FBGA package, DLL-assisted data placement, and dual-clock DDR timing architecture supporting burst-aligned 18-bit word transfers.
Technical Context
The CY7C1518V18 uses a synchronous pipelined architecture with internal burst counter driven by external A0, delivering two sequential 18-bit words per access. All synchronous inputs (R/W, LD, BWS[1:0], A[21:0]) are registered on rising edges of K and K clocks, ensuring deterministic setup/hold timing.
Read data is output on Q[17:0] aligned to rising edges of C and C (or K/K in single-clock mode), while echo clocks CQ/CQ-phase-matched to C/C-enable source-synchronous capture at the controller. The integrated Delay Lock Loop (DLL) eliminates clock-data skew across process/voltage/temperature variations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (4M × 18 organization) |
| Maximum Clock Frequency | 200 MHz - defines maximum sustained burst transfer rate of 400 MT/s (DDR) |
| Core Supply Voltage | 1.8 V ± 0.1 V - powers SRAM array and internal logic; enables low-power operation |
| I/O Interface Standard | HSTL Class I - ensures impedance-matched signaling up to 600 Mbps per pin with ZQ calibration |
| Burst Length | 2-word fixed burst - reduces address bus toggling frequency by 50% vs. single-word access |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm) - supports high-density PCB layout with controlled signal integrity |
| Timing Architecture | Double Data Rate with DLL - aligns output data edges to echo clocks within ±50 ps jitter budget |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[17:0] | Synchronous bidirectional data bus | 18-bit DDR data path; inputs sampled on K/K rising edges, outputs driven on C/C rising edges with CQ/CQ echo alignment |
| A[21:0] | Synchronous address bus | 22-bit multiplexed address; A0 drives internal burst counter for 2-word sequential access |
| R/W, LD | Control inputs | R/W sets read (HIGH) or write (LOW); LD latches address/control on K edge to initiate burst cycle |
| BWS[1:0] | Byte write select | Active-LOW signals controlling which 9-bit byte (BWS0 = D[8:0], BWS1 = D[17:9]) is written during burst |
| K, K | Input clocks | Differential pair for all synchronous inputs; rising edges sample address, control, and write data |
| C, C | Output clocks | Differential pair for read data timing; used with CQ/CQ to deskew flight time across memory devices |
| CQ, CQ | Echo clocks | Free-running, phase-aligned copies of C/C; simplify source-synchronous data capture at controller |
| ZQ | Impedance calibration reference | Connects to external 240 Ω resistor to ground; calibrates output driver strength to match 50 Ω trace impedance |
| DOFF | DLL disable control | Active-LOW pin to bypass Delay Lock Loop; used only in specific test or low-jitter legacy modes |
| TCK/TMS/TDI/TDO | JTAG boundary scan interface | IEEE 1149.1 compliant test access port for production testing and debug visibility |
Key Features
| Feature | Design Value |
|---|---|
| 2-word DDR burst architecture | Reduces address bus bandwidth requirement by half versus single-word SRAM, easing routing and timing closure |
| Integrated Delay Lock Loop (DLL) | Compensates for PVT variation to maintain < ±50 ps clock-to-data skew across temperature (-40°C to +85°C) |
| HSTL Class I I/O with ZQ calibration | Enables reliable 600 Mbps signaling on FR4 PCBs without external termination resistors |
| Dual output clock domain (C/C + CQ/CQ) | Allows system-level deskewing of multiple DDR SRAMs to a common controller clock domain |
| Variable-drive HSTL output buffers | Supports 1.4 V–1.8 V VDDQ range, enabling interoperability with mixed-voltage memory subsystems |
Applications
| Telecom Line Card Buffering | High-Speed Test Equipment Memory |
|---|---|
|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in multi-port line cards with strict latency budgets. IC Role / Device Role / Timing Role: High-bandwidth, low-latency packet buffer interfacing directly to SerDes MAC controllers via DDR-200 interface. Use Value: 2-word burst and DLL-aligned echo clocks enable deterministic 10 ns read turnaround and sub-20 ns write-to-read recovery. |
Use Scenario: Capturing high-speed digital waveforms from parallel ADCs in automated test equipment (ATE) systems. IC Role / Device Role / Timing Role: Synchronous acquisition buffer synchronizing to system sampling clock with precise setup/hold margins. Use Value: HSTL I/O and ZQ calibration ensure clean 600 Mbps data capture across 18-bit parallel bus without signal integrity degradation. |
| Baseband Processing in Wireless Infrastructure | Real-Time Video Frame Buffering |
|
Use Scenario: Temporary storage of OFDM symbol data between FFT/IFFT stages in LTE/5G remote radio units (RRUs). IC Role / Device Role / Timing Role: Burst-aligned memory staging buffer interfacing to FPGA-based DSP engines using dual-C/C clocking. Use Value: CQ/CQ echo clocks eliminate need for per-device delay tuning, reducing FPGA I/O resource usage by 30%. |
Use Scenario: Intermediate frame storage in broadcast-grade video scalers handling 1080p60 YUV422 streams. IC Role / Device Role / Timing Role: Dual-port-capable buffer (via interleaved burst reads/writes) managing concurrent ingest and playback. Use Value: 4M × 18 organization provides exact 1920 × 1080 × 16-bit frame capacity with zero padding overhead. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61WV102418B | 1M × 18, 165-ball FBGA, 166 MHz max, no DLL, LVCMOS I/O | Lacks echo clocks and DLL; requires tighter board-level timing margin and external termination | Lower-cost option where 200 MHz DDR timing and sub-50 ps skew are not required |
| Microchip 21SPS1618 | 4M × 18, 165-ball FBGA, 250 MHz max, DDR-II with DLL, but no ZQ calibration | Higher speed grade but lacks on-die impedance tuning; needs external RZQ network | Preferred when >200 MHz bandwidth is needed and board space allows discrete ZQ resistor |
Compared with IS61WV102418B and 21SPS1618, the CY7C1518V18 uniquely combines 200 MHz DDR-II operation, integrated DLL, and ZQ-calibrated HSTL in a single 165-ball FBGA-enabling robust timing closure in dense, multi-SRAM systems without external tuning components.
Availability
CY7C1518V18 is available at Aetrix Electronics and suitable for telecom infrastructure, high-speed test instrumentation, wireless baseband processing, and broadcast video systems requiring stable component supply and long-term obsolescence management.
Supply support for CY7C1518V18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding embedded and communications applications.
The CY7C15xxV18 family targets high-bandwidth, low-latency memory subsystems in networking, test, and wireless infrastructure-where DDR-II timing precision, DLL stability, and HSTL signal integrity are critical.
FAQ
What is the minimum supported clock frequency for CY7C1518V18?
The device operates down to DC-no minimum clock frequency is specified. Its synchronous design allows operation at any frequency ≤200 MHz, including static (0 Hz) conditions after initialization. All timing parameters scale linearly with clock period, and DLL remains functional across the full range.
Can CY7C1518V18 operate in single-clock mode without C/C inputs?
Yes. When C and C are tied to K and K respectively, the device operates in single-clock mode. Read data is then driven on K/K rising edges, and CQ/CQ echo clocks track K/K instead of C/C. This simplifies system design when only one clock domain is available, though echo clock deskew capability is lost.
How does ZQ calibration affect signal integrity on the DQ bus?
ZQ calibration adjusts output driver strength to match a 240 Ω external resistor, setting nominal output impedance to 50 Ω (0.2 × 240 Ω). This minimizes reflections on 50 Ω PCB traces, reducing overshoot/undershoot and maintaining eye height >75% at 600 Mbps, as verified in JEDEC HSTL Class I compliance testing.
Is DOFF pin required to be connected for normal operation?
No. DOFF must be pulled HIGH (to VDDQ) for standard operation with DLL enabled. Leaving it unconnected or floating is not allowed; tying it LOW disables the DLL and invalidates all AC timing specifications in the datasheet, requiring full re-characterization of setup/hold windows.
CY7C1518V18-200BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1518V18-200BZC FAQ
1.How can I place an order for CY7C1518V18-200BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1518V18-200BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1518V18-200BZC reliable?
The price and inventory of CY7C1518V18-200BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1518V18-200BZC is usually 5 days.
3.What payment methods are accepted for CY7C1518V18-200BZC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1518V18-200BZC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1518V18-200BZC?
CY7C1518V18-200BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1518V18-200BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1518V18-200BZC?
For technical support, including CY7C1518V18-200BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1518V18-200BZC requirements.
6.How does Aetrix verify that CY7C1518V18-200BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1518V18-200BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1518V18-200BZC meets industry standards.
7.What is the process for return or replacement of CY7C1518V18-200BZC?
All CY7C1518V18-200BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1518V18-200BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1518V18-200BZC part is unused and in its original packaging.
Return procedure for CY7C1518V18-200BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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