Infineon Technologies CY7C1520AV18-200BZXI

Overview

CY7C1520AV18-200BZXI from Cypress Semiconductor is a 72-Mbit DDR-II synchronous SRAM configured as 2 M × 36, operating at 200 MHz with 1.8-V core supply and HSTL I/O. It implements two-word burst architecture with dual input clocks (K/K̄) and dual output clocks (C/C̄), supports echo clocks (CQ/CQ̄) for timing alignment, and features on-chip DLL for 1.5-cycle read latency in DDR-II mode.

For engineers reviewing the CY7C1520AV18-200BZXI datasheet, CY7C1520AV18-200BZXI pinout, CY7C1520AV18-200BZXI application, or CY7C1520AV18-200BZXI equivalent, this device serves high-bandwidth buffering in telecom line cards, packet-switching ASIC interfaces, FPGA co-processor memory subsystems, and real-time video frame stores where precise DDR timing and low-latency burst access are critical.

Technical Context

The CY7C1520AV18-200BZXI uses a synchronous pipelined architecture with internal burst counter driven by A0, delivering two consecutive 36-bit words per access. All address, control, and data inputs are registered on rising edges of K and K̄, while read data is edge-aligned to C and C̄ (or K/K̄ in single-clock mode).

It integrates a delay-locked loop (DLL) enabling accurate data placement at 200 MHz; when disabled via DOFF, it reverts to DDR-I operation with 1-cycle latency up to 167 MHz. Output impedance is programmable via ZQ pin, and byte write select (BWS[3:0]) enables granular 9-bit write masking across four independent byte lanes.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, Pb-free (RoHS-compliant) variant per BZXI suffix.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with AS7C3256A-20TIN and IS61WV102432BLL-20BLI, the CY7C1520AV18-200BZXI uniquely delivers DDR-II timing, echo clocks, and DLL-based latency control at 72-Mbit density-enabling higher bandwidth, lower system-level timing margin risk, and simplified layout in new high-speed designs.

Availability

CY7C1520AV18-200BZXI is available at Aetrix Electronics and suitable for telecom infrastructure, FPGA acceleration, ASIC co-processing, and real-time video systems requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for CY7C1520AV18-200BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.

The CY7C15xxAV18 series was designed specifically for DDR-II synchronous SRAM applications demanding deterministic low-latency burst access, precise clock deskew, and industrial-temperature reliability in high-speed networking and signal processing systems.

FAQ

What is the minimum VREF voltage required for reliable HSTL operation?

The CY7C1520AV18-200BZXI requires VREF = 0.9 V ± 1% for HSTL Class I compliance. Deviations beyond ±20 mV cause increased input threshold uncertainty and may result in setup/hold violations at 200 MHz. A dedicated low-noise 0.9-V regulator or resistor divider from VDDQ is recommended over direct connection to VDDQ.

Can C and C̄ be tied together and driven as a single-ended clock?

No. C and C̄ must remain differential and 180° out-of-phase to meet AC timing specifications. Tying them together violates the input common-mode range and disables echo clock functionality. The device requires true differential signaling on both C and C̄ for proper DDR-II read data alignment and DLL operation.

How does byte write select (BWS) interact with burst addressing?

BWS[3:0] operates independently of burst address generation. Each BWS bit masks one 9-bit byte lane for the entire two-word burst - i.e., asserting BWS0 LOW writes DQ[8:0] for both first and second burst word. No per-word byte masking is supported; burst writes are atomic across both words within enabled lanes.

Is the ZQ pin required to be connected for functional operation?

Yes. ZQ must be connected to either a 50-Ω resistor to ground (for calibrated 50-Ω output drive) or directly to VDDQ (for minimum drive strength). Leaving ZQ floating or connecting it to VSS causes undefined output impedance, leading to signal integrity failures, excessive overshoot, and potential bus contention in multi-device configurations.