Infineon Technologies CY7C1520KV18-200BZC

Overview

CY7C1520KV18-200BZC from Cypress Semiconductor is a 72-Mbit synchronous DDR-II SRAM configured as 2M × 36, operating at 333 MHz with double-data-rate interface delivering 666 MT/s effective bandwidth. It uses two-word burst architecture, dual input clocks (K/K) and dual output clocks (C/C), and supports 1.8 V core with HSTL I/O compatible with 1.5 V or 1.8 V VDDQ. It is deployed in high-speed packet buffering for network switches and telecom line cards.

For engineers reviewing the CY7C1520KV18-200BZC datasheet, CY7C1520KV18-200BZC pinout, CY7C1520KV18-200BZC application, or CY7C1520KV18-200BZC equivalent, key selection criteria include DDR-II burst timing, echo clock (CQ/CQ) synchronization capability, DOFF-configurable read latency (1 or 1.5 cycles), HSTL drive strength programmability, and 165-ball FBGA mechanical compatibility.

Technical Context

The device implements a pipelined synchronous architecture with internal burst counter driven by A0, latching addresses on alternating rising edges of K and K. Read data is registered and driven on rising edges of C and C (or K/K in single-clock mode), tightly aligned to echo clocks CQ/CQ for deterministic capture at the controller.

It integrates a PLL for precise data placement, JTAG 1149.1 boundary scan for testability, and ZQ-calibrated output impedance matching. Write operations are self-timed internally, and byte write select (BWS[3:0]) enables granular 9-bit byte masking without disturbing adjacent data.

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Compared with AS7C3256B-20TIN and IS61WV102432BLL-15BLI, CY7C1520KV18-200BZC uniquely delivers DDR-II burst efficiency with echo-clock–assisted timing closure at 333 MHz-critical for scalable, multi-device packet buffering where deterministic latency and board-level skew management are mandatory.

Availability

CY7C1520KV18-200BZC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and baseband processing requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant FBGA packaging.

Supply support for CY7C1520KV18-200BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive systems, with emphasis on signal integrity and timing precision.

CY7C1520KV18 belongs to Cypress's DDR-II synchronous SRAM product line, engineered specifically for deterministic, high-throughput buffering in packet-switched infrastructure where echo-clock–synchronized data capture eliminates controller-side timing uncertainty.

FAQ

What is the function of the DOFF pin on CY7C1520KV18-200BZC?

The DOFF pin selects read latency mode: when asserted LOW, the device operates in DDR-I mode with 1-cycle read latency; when HIGH, it enters DDR-II mode with 1.5-cycle latency. This setting determines internal pipeline depth and affects controller timing budget allocation-no external configuration register is required.

Can CY7C1520KV18-200BZC operate with only K and K clocks, without C and C?

Yes. In single-clock mode, read data is driven on the rising edges of K and K instead of C and C. The device still generates CQ and CQ referenced to K/K, preserving echo-clock functionality for source-synchronous capture-no external C/C clock sources are needed for basic operation.

How does ZQ calibration affect signal integrity on CY7C1520KV18-200BZC?

ZQ calibration adjusts DQ and CQ output driver impedance to match the system data bus (typically 48–50 Ω). Using a 240 Ω resistor from ZQ to ground sets nominal output impedance to 48 Ω ±10%, reducing reflections and improving eye diagram margins-especially critical at 666 MT/s DDR rates.

Is CY7C1520KV18-200BZC pin-compatible with CY7C1518KV18-200BZC?

No. Although both use the same 165-ball FBGA package, pin assignments differ significantly: CY7C1518KV18 has DQ[17:0], BWS[1:0], and 22 address lines (A[21:0]), while CY7C1520KV18 uses DQ[35:0], BWS[3:0], and 21 address lines (A[20:0]). Direct substitution requires PCB redesign.