Infineon Technologies CY7C1520KV18-250BZC

Overview

CY7C1520KV18-250BZC from Cypress Semiconductor is a 72-Mbit synchronous DDR-II SRAM configured as 2M × 36, operating at 250 MHz (4 ns clock period), supporting double-data-rate transfers at 500 Mbps per pin, with 1.8 V core supply and HSTL I/O compatible with 1.5 V or 1.8 V VDDQ. It implements two-word burst addressing, echo clocks (CQ/CQ), and programmable output impedance via ZQ for high-speed memory subsystems in networking line cards and packet buffering applications.

For engineers reviewing the CY7C1520KV18-250BZC datasheet, CY7C1520KV18-250BZC pinout, CY7C1520KV18-250BZC application, or CY7C1520KV18-250BZC equivalent, key selection considerations include its 2M × 36 organization, 250 MHz K/K clock frequency, DOFF-configurable 1-cycle (DDR-I) or 1.5-cycle (DDR-II) read latency, dual C/C output clocks for skew mitigation, and 165-ball FBGA package with HSTL-18 I/O compliance.

Technical Context

The CY7C1520KV18-250BZC uses a synchronous pipelined architecture with internal burst counter driven by A0, delivering two consecutive 36-bit words per access. All address, control, and data inputs are registered on rising edges of complementary K/K clocks, enabling precise timing alignment at 250 MHz.

Read data is edge-aligned to complementary C/C output clocks, while echo clocks CQ/CQ-phase-synchronized to C/C-enable source-synchronous capture at the controller. The device supports single-clock mode (using K/K only) and includes JTAG 1149.1 boundary scan, PLL-based data placement, and ZQ-calibrated HSTL output drive strength.

Key Specifications

Pinout & Package

Package: 165-ball FBGA (13 × 15 × 1.4 mm), ball pitch 0.8 mm, JEDEC MO-270AC compliant. Pinout validated per Cypress Document 001-00437 Rev. *V (Pages 4–5).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with AS7C3256A-25JC and IS61WV102418BLL-25BLI, CY7C1520KV18-250BZC delivers 4× higher density, DDR bandwidth, and source-synchronous timing-making it uniquely suited for modern packet processing and real-time waveform capture where deterministic latency and skew tolerance are critical.

Availability

CY7C1520KV18-250BZC is available at Aetrix Electronics and suitable for telecom packet buffering, high-speed network switch ASIC interface, and industrial real-time data logging requiring stable component supply, long-term lifecycle support, and guaranteed RoHS-compliant sourcing.

Supply support for CY7C1520KV18-250BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1520KV18 belongs to Cypress's DDR-II synchronous SRAM product line, designed specifically for high-throughput, low-latency memory subsystems in networking equipment, test instrumentation, and real-time embedded systems demanding deterministic timing and scalable bandwidth.

FAQ

What is the function of the DOFF pin on CY7C1520KV18-250BZC?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted LOW, the device operates in DDR-I mode with 1-cycle read latency; when HIGH, it enables DDR-II mode with 1.5-cycle latency. This setting directly controls internal burst timing and determines whether the second word of the two-word burst is output on the same or subsequent C/C edge. It is sampled synchronously on the K clock edge and must be stable before read initiation.

Can CY7C1520KV18-250BZC operate without external C and C clocks?

Yes - the device supports single-clock mode using only K and K for both input and output timing. In this mode, read data is driven on the rising edges of K and K, and CQ/CQ are generated relative to K/K instead of C/C. However, echo-clock benefits (skew compensation, simplified capture) are lost, and maximum achievable data rate may be limited by board-level clock distribution constraints.

How does ZQ calibration affect signal integrity in CY7C1520KV18-250BZC?

ZQ calibration adjusts the output driver strength of DQ, CQ, and CQ pins to match the system's characteristic impedance (typically 50 Ω). By connecting a 240 Ω resistor from ZQ to ground, the device measures reference current and trims internal drive strength to achieve 0.2 × RQ (≈48 Ω), minimizing reflections and ensuring clean eye diagrams at 500 Mbps/pin. This eliminates manual termination design and improves robustness across voltage/temperature variation.

Is CY7C1520KV18-250BZC pin-compatible with CY7C1518KV18-250BZI?

No - although both are DDR-II SRAMs from the same family, CY7C1520KV18-250BZC (2M × 36, 165-ball FBGA) and CY7C1518KV18-250BZI (4M × 18, also 165-ball FBGA) have different ball mappings. Key differences include DQ[35:0] vs. DQ[17:0], BWS[3:0] vs. BWS[1:0], and distinct address pin counts (21 vs. 22). Layout reuse is not possible without redesign; they serve different data-width and density requirements.