Infineon Technologies CY7C1520KV18-250BZCT

Overview

CY7C1520KV18-250BZCT from Cypress Semiconductor is a 72-Mbit synchronous DDR-II SRAM configured as 2M × 36, operating at 250 MHz (4 ns clock period), with double-data-rate I/O delivering 500 MT/s effective throughput, 1.8 V core supply, and HSTL-compatible 1.4–1.8 V I/O voltage range. It implements two-word burst reads/writes synchronized to dual K/K input clocks and dual C/C output clocks, and is used in high-bandwidth packet buffering and network switch data planes.

For engineers reviewing the CY7C1520KV18-250BZCT datasheet, CY7C1520KV18-250BZCT pinout, CY7C1520KV18-250BZCT application, or CY7C1520KV18-250BZCT equivalent, key selection criteria include DDR-II burst timing, echo clock (CQ/CQ) support for source-synchronous capture, DOFF-configurable 1-cycle vs. 1.5-cycle read latency, and 165-ball FBGA (13 × 15 × 1.4 mm) mechanical compatibility.

Technical Context

This device integrates a pipelined SRAM core with synchronous peripheral logic including a 1-bit burst counter, phase-locked loop (PLL) for precise data placement, and JTAG 1149.1 test access port. Address latching occurs on alternate rising edges of K/K, while write data is registered on both K and K edges.

Read data is driven on rising edges of C/C (or K/K in single-clock mode), tightly aligned to echo clocks CQ/CQ for system-level timing closure. The DOFF pin selects between DDR-I mode (1-cycle latency, DOFF = LOW) and DDR-II mode (1.5-cycle latency, DOFF = HIGH), enabling flexible latency/bandwidth trade-offs.

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant, lead-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Compared with AS7C362000B-250BIN and IS61WV204836BLL-250BLI, CY7C1520KV18-250BZCT delivers higher effective bandwidth (500 MT/s vs. ≤333 MT/s), eliminates board-level clock deskew via CQ/CQ, and enables latency tuning-critical for real-time networking and test systems.

Availability

CY7C1520KV18-250BZCT is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, industrial protocol gateway cache, and test equipment pattern memory requiring stable component supply, long-term lifecycle support, and verified FBGA sourcing.

Supply support for CY7C1520KV18-250BZCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and system-level timing.

CY7C1520KV18 belongs to Cypress's DDR-II synchronous SRAM product line, engineered specifically for deterministic, high-bandwidth buffering in packet-switched infrastructure where echo clocks and burst efficiency reduce controller complexity.

FAQ

What is the function of the DOFF pin on CY7C1520KV18-250BZCT?

The DOFF pin configures read latency mode: when asserted LOW, it enables DDR-I operation with 1-cycle read latency; when asserted HIGH, it enables DDR-II operation with 1.5-cycle read latency. This selection directly affects controller pipeline depth and achievable bandwidth efficiency, and must be set statically before initialization.

How does the ZQ pin affect signal integrity in high-speed designs?

The ZQ pin connects to an external resistor to ground to calibrate output driver impedance for DQ and CQ signals, targeting 0.2 × RQ. This ensures consistent 25–35 Ω output impedance across voltage/temperature, minimizing reflections and jitter on 500 MT/s DDR buses routed over FR4 PCBs.

Can CY7C1520KV18-250BZCT operate without external C and C clocks?

Yes - in single-clock mode, the device uses K and K for both input sampling and output data gating. However, this forfeits flight-time deskew capability and increases timing margin pressure on the controller, as CQ/CQ echo clocks are no longer available to align data capture.

What is the role of the burst counter in CY7C1520KV18-250BZCT's architecture?

The burst counter increments the least significant address bit (A0) internally to generate sequential 36-bit word addresses during each two-word burst. This eliminates the need for external address sequencing logic and halves the required address bus toggle rate, reducing controller overhead and EMI.