Infineon Technologies CY7C1520KV18-250BZIT

Overview

CY7C1520KV18-250BZIT from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous DDR-II SRAM with two-word burst architecture, 250 MHz maximum clock frequency, 1.8 V core supply, and HSTL I/O compatible with 1.5 V or 1.8 V VDDQ. It delivers 600 MB/s bandwidth in DDR mode and supports precise timing via dual K/K input clocks and dual C/C output clocks for skew management - deployed in high-speed packet buffering for telecom line cards.

For engineers reviewing the CY7C1520KV18-250BZIT datasheet, CY7C1520KV18-250BZIT pinout, CY7C1520KV18-250BZIT application, or CY7C1520KV18-250BZIT equivalent, key selection criteria include confirmed 2M × 36 organization, 250 MHz/500 Mbps DDR operation, DOFF-configurable 1-cycle (DDR-I) or 1.5-cycle (DDR-II) read latency, HSTL drive strength programmability, and JTAG 1149.1 test access support.

Technical Context

The CY7C1520KV18-250BZIT implements a synchronous pipelined SRAM core with DDR-II interface logic, using separate K/K clocks for address/control/data capture and independent C/C clocks for output data strobing. Its burst counter consumes A0 to generate sequential 36-bit word pairs on each access.

It supports both dual-clock (C/C + CQ/CQ echo clocks) and single-clock (K/K only) modes. The DOFF pin selects between 1-cycle (DOFF = LOW) and 1.5-cycle (DOFF = HIGH) read latency, while ZQ enables dynamic output impedance calibration against an external resistor to ground.

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant (Pb-free).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Compared with IS61WV102436BLL-15BLI and 21SPD020-250BG, CY7C1520KV18-250BZIT uniquely combines HSTL I/O, on-die ZQ calibration, and hardware-selectable DDR-I/II latency - enabling tighter timing closure in high-speed serial fabric interfaces without external termination or latency compensation logic.

Availability

CY7C1520KV18-250BZIT is available at Aetrix Electronics and suitable for telecom infrastructure, automated test equipment, network processor acceleration, and industrial video processing requiring stable component supply and long-term lifecycle support.

Supply support for CY7C1520KV18-250BZIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets, with emphasis on signal integrity and system-level timing robustness.

The CY7C15xxKV18 family targets high-speed data buffering in systems demanding deterministic latency, burst efficiency, and DDR-compatible I/O - specifically engineered for SerDes-adjacent memory subsystems in telecom and test instrumentation.

FAQ

What is the function of the DOFF pin on CY7C1520KV18-250BZIT?

The DOFF (Data Output OFFset) pin configures read latency: when asserted HIGH, it enables DDR-II mode with 1.5-cycle latency; when LOW, it selects DDR-I mode with 1-cycle latency. This setting directly affects the number of K-clock cycles between address load and first valid DQ output, and is latched synchronously on the rising edge of K.

Can CY7C1520KV18-250BZIT operate without external C and C clocks?

Yes - it supports single-clock mode using only K and K for both input capture and output strobing. In this mode, CQ and CQ are generated relative to K/K instead of C/C, and read data is driven on the rising edges of K/K. All timing parameters shift accordingly, and echo clock deskew capability is lost.

How does ZQ calibration affect system-level signal integrity?

ZQ calibration adjusts the output driver impedance of DQ, CQ, and CQ pins to 0.2 × RQ, where RQ is an external precision resistor (typically 50 Ω) tied between ZQ and ground. This actively matches trace impedance, reducing reflections and improving eye height/width - especially critical at 500 Mbps DDR data rates on FR4 PCBs.

Is CY7C1520KV18-250BZIT pin-compatible with CY7C1518KV18-250BZI?

No - although both use 165-ball FBGA packages, their pinouts differ significantly: CY7C1520KV18-250BZIT has 36 DQ pins (DQ[35:0]) and four BWS inputs (BWS[3:0]), while CY7C1518KV18-250BZI has 18 DQ pins (DQ[17:0]) and two BWS inputs (BWS[1:0]). Address count (21 vs. 22) and internal array mapping also differ.