Infineon Technologies CY7C1520KV18-250BZXC

Overview

CY7C1520KV18-250BZXC from Cypress Semiconductor is a 72-Mbit synchronous DDR-II SRAM configured as 2M × 36, operating at 250 MHz (40 ns clock period), with double-data-rate interface delivering 500 MT/s effective data rate, 1.5-cycle read latency when DOFF = HIGH, and HSTL I/O compatible with 1.5 V or 1.8 V VDDQ - deployed in high-bandwidth packet buffering for telecom line cards.

For engineers reviewing the CY7C1520KV18-250BZXC datasheet, CY7C1520KV18-250BZXC pinout, CY7C1520KV18-250BZXC application, or CY7C1520KV18-250BZXC equivalent, key selection criteria include burst-mode timing alignment, echo-clock–based data capture, dual-K/K and dual-C/C clock domain support, and JTAG 1149.1 testability for system-level DDR memory validation.

Technical Context

The device implements a synchronous pipelined architecture with two-word burst addressing driven by A0, using separate K/K input clocks for address/control latching and C/C output clocks for data strobing. All synchronous inputs register on rising edges of K or K; all outputs register on rising edges of C/C (or K/K in single-clock mode).

It integrates an on-chip PLL for precise data placement, echo clocks CQ/CQ synchronized to C/C for simplified receiver capture, and programmable output impedance via ZQ pin calibrated to external 240 Ω resistor. Read latency is configurable: 1 cycle (DDR-I mode) when DOFF = LOW, 1.5 cycles (DDR-II mode) when DOFF = HIGH.

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, Pb-free option available (BZXC suffix).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with IS61WV102436BLL-15BLI and MT47H64M36RT-25E:H, CY7C1520KV18-250BZXC delivers deterministic sub-10 ns read latency, eliminates refresh overhead, and provides echo-clock–assisted timing closure - essential for real-time signal and packet processing.

Availability

CY7C1520KV18-250BZXC is available at Aetrix Electronics and suitable for telecom infrastructure, network processor co-processing, baseband signal processing, and industrial video frame buffering requiring stable component supply and long-term lifecycle assurance.

Supply support for CY7C1520KV18-250BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding embedded and communications applications.

CY7C1520KV18 belongs to Cypress's DDR-II synchronous SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth buffering in telecom, networking, and signal processing systems where DDR SDRAM unpredictability is unacceptable.

FAQ

What is the function of the DOFF pin on CY7C1520KV18-250BZXC?

The DOFF (Data Output OFFset) pin configures read latency mode: when asserted HIGH, it enables DDR-II operation with 1.5-cycle latency for improved timing margin; when LOW, it reverts to DDR-I mode with 1-cycle latency for minimal delay. This setting directly controls internal pipeline staging and must be held static during operation.

Can CY7C1520KV18-250BZXC operate without external C and C clocks?

Yes - the device supports single-clock mode where K and K serve as both input and output clocks. In this configuration, C and C pins are unused, CQ/CQ derive from K/K, and data is strobed on K/K rising edges. However, echo-clock–assisted timing closure and flight-time deskew capability are forfeited.

How is output impedance calibrated using the ZQ pin?

ZQ connects to a precision 240 Ω resistor to ground; the device measures this reference and adjusts internal drive strength to achieve 0.2 × RQ = 48 Ω output impedance. Calibration occurs automatically at power-up and can be retriggered via JTAG instruction. Direct connection to VDDQ enables minimum-impedance mode (~35 Ω).

What is the role of BWS[3:0] in byte-write operations?

BWS[3:0] are active-LOW byte write selects that gate corresponding 9-bit segments of the 36-bit DQ bus: BWS0–BWS3 control DQ[8:0], [17:9], [26:18], and [35:27]. When a BWS line is HIGH, its associated byte is masked - preserving existing memory contents without requiring read-modify-write cycles.