Infineon Technologies CY7C1523AV18-250BZC
- Part No.:
- CY7C1523AV18-250BZC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1523AV18-250BZC.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1523AV18 from Cypress Semiconductor is a 72-Mbit (4M × 18) synchronous pipelined SRAM with DDR-II Separate I/O architecture, operating at 250 MHz clock frequency (600 Mbps data rate), supporting 2-word burst reads/writes, and featuring dual echo clocks (CQ/CQ) for precise high-speed data capture in memory subsystems used in network packet buffers and baseband processing.
For engineers reviewing the CY7C1523AV18 datasheet, CY7C1523AV18 pinout, CY7C1523AV18 application, or CY7C1523AV18 equivalent, this device requires attention to its 165-ball FBGA package, HSTL I/O compatibility, DLL-enabled 1.5-cycle read latency, and dual-clock domain timing for DDR-II SIO interface design.
Technical Context
The CY7C1523AV18 implements a synchronous pipelined architecture with separate read and write ports sharing a common 21-bit address bus (A[20:0]), enabling concurrent access without bus turnaround. It uses two independent input clocks (K/K) for address and control latching and two output clocks (C/C) for synchronized data output, with echo clocks (CQ/CQ) phase-aligned to C/C for receiver-side deskewing.
Internally organized as two 2M × 18 arrays, it supports byte-write select (BWS[1:0]) for selective 18-bit word updates, and includes JTAG 1149.1 test access, ZQ impedance calibration, and DOFF-controlled DLL enable/disable to switch between DDR-II (1.5-cycle latency) and DDR-I (1-cycle latency) timing modes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 72 Mbit (4M × 18 configuration) |
| Max Clock Frequency | 250 MHz - defines maximum sustained bandwidth of 900 MB/s (2 × 18-bit × 250 MHz) |
| Data Rate | 600 Mbps - double-data-rate transfer on both rising edges of K/K and C/C clocks |
| Read Latency | 1.5 cycles (DLL enabled) or 1 cycle (DLL disabled via DOFF = LOW) - directly impacts memory controller pipeline depth |
| I/O Standard | HSTL Class I - requires VREF = 0.9V and supports 1.4V–1.8V output swing for signal integrity at 600 Mbps |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm) - standard footprint for high-density PCB layout with thermal pad |
| Power Supply | 1.8V core (VDD), 1.8V I/O (VDDQ) - enables low-power operation while maintaining DDR-II timing margins |
Pinout & Package
Available in a 165-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 15 mm × 17 mm × 1.4 mm with exposed thermal pad, optimized for high-speed signal routing and thermal dissipation in dense memory modules.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A[20:0] | Address Input | 21-bit multiplexed address bus sampled on rising edge of K; selects one of 4M locations for 2-word burst |
| D[17:0] | Data Input | 18-bit synchronous write data path registered on rising edges of both K and K clocks |
| Q[17:0] | Data Output | 18-bit synchronous read data driven on rising edges of C/C (or K/K in single-clock mode) |
| BWS[1:0] | Byte Write Select | Active-low signals controlling write enable per 9-bit byte; BWS0 → D[8:0], BWS1 → D[17:9] |
| C / C | Output Clock Pair | Differential clock pair for read data strobing; enables flight-time deskew across multiple devices |
| CQ / CQ | Echo Clock Pair | Free-running output clocks synchronized to C/C; simplifies source-synchronous capture at controller |
| DOFF | DLL Control | Active-low pin disabling internal Delay Lock Loop to revert to DDR-I timing (1-cycle latency, ≤167 MHz) |
| ZQ | Impedance Calibration | Connects to external 240Ω resistor to ground to calibrate output driver impedance to 48Ω ±15% |
Key Features
| Feature | Design Value |
|---|---|
| DDR-II Separate I/O Architecture | Eliminates data bus turnaround delay by dedicating D[17:0] for writes and Q[17:0] for reads |
| 2-Word Burst Operation | Reduces address bus toggling frequency by 50% compared to single-word access at same clock rate |
| Dual Echo Clocks (CQ/CQ) | Enables deterministic data capture at memory controller without board-level trace length matching |
| Programmable DLL Mode | DOFF pin allows runtime switching between 1.5-cycle (high-performance) and 1-cycle (legacy-compatible) read latency |
| HSTL I/O with ZQ Calibration | Ensures consistent 48Ω output impedance across voltage/temperature for clean 600 Mbps signaling |
Applications
| Network Packet Buffer | Baseband Signal Processing |
|---|---|
Use Scenario: Storing and forwarding variable-length Ethernet frames in Layer 2/L3 switches with line-rate throughput. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer providing 2-word burst reads/writes synchronized to switch fabric clock. Use Value: 900 MB/s sustained bandwidth and 1.5-cycle DLL-enabled latency minimize packet queuing delay in multi-port switching ASICs. | Use Scenario: Temporary storage of FFT outputs and channel estimation results in LTE eNodeB digital front-end. IC Role / Device Role / Timing Role: Dual-port SRAM acting as ping-pong buffer between ADC/DSP and modulator stages with precise DDR-II timing alignment. Use Value: CQ/CQ echo clocks eliminate inter-device skew, enabling reliable 250 MHz sampling across multiple parallel processing paths. |
| High-Speed Test Equipment | Avionics Data Acquisition |
Use Scenario: Capturing real-time analog waveform samples at >1 GSPS using time-interleaved ADCs before post-processing. IC Role / Device Role / Timing Role: Burst-capable memory interfacing directly to FPGA-based acquisition logic with minimal glue logic. Use Value: 250 MHz clock support and HSTL I/O ensure signal integrity over 10+ cm traces on high-layer-count test system PCBs. | Use Scenario: Buffering sensor telemetry streams (ARINC 429, MIL-STD-1553) in flight control computers requiring DO-254 compliance. IC Role / Device Role / Timing Role: Radiation-tolerant-qualified SRAM providing deterministic access timing under EMI-heavy avionics environments. Use Value: DLL-off mode (1-cycle latency at ≤167 MHz) provides fail-safe timing margin during transient voltage fluctuations. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed burst SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1523AV18-278BZC | Higher max clock (278 MHz) and current draw (880 mA @ 278 MHz); identical pinout and feature set | Suitable for systems requiring margin above 250 MHz or tighter timing closure | Select when board-level timing analysis shows setup/hold slack < 120 ps at 250 MHz |
| IS42S16400F-6BLI | SDRAM (not SRAM); 4M × 16, 166 MHz, 3.3V, no DLL or echo clocks; different command protocol | Lower cost, higher density per pin but requires refresh and complex controller logic | Choose only if system already uses SDRAM controller and can tolerate 50+ ns refresh overhead |
Compared with CY7C1523AV18-278BZC, this -250BZC variant trades 28 MHz speed headroom for lower power (800 mA vs. 880 mA) and relaxed timing closure; versus IS42S16400F, it delivers deterministic zero-refresh latency and native DDR-II SIO but at higher unit cost and lower density efficiency.
Availability
CY7C1523AV18-250BZC is available at Aetrix Electronics and suitable for network packet buffering, baseband signal processing, high-speed test equipment, and avionics data acquisition requiring stable component supply and long-term industrial lifecycle support.
Supply support for CY7C1523AV18-250BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for industrial, automotive, and communications markets with emphasis on reliability and signal integrity.
This device belongs to the DDR-II SIO SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth memory interfacing in FPGA- and ASIC-based systems where bus turnaround overhead and clock skew must be eliminated.
FAQ
What is the function of the DOFF pin on CY7C1523AV18-250BZC?
The DOFF (DLL Turn Off) pin is an active-low control that disables the internal Delay Lock Loop. When pulled LOW, the device operates in DDR-I mode with 1-cycle read latency and maximum frequency reduced to 167 MHz. When tied HIGH (via ≤10 kΩ pull-up), DLL is enabled, delivering 1.5-cycle latency at full 250 MHz operation. This pin must never be left floating or tied directly to GND.
How does the ZQ pin affect output driver performance?
The ZQ pin connects to an external 240 Ω resistor to ground to calibrate the output driver impedance to 48 Ω ±15%, ensuring matched termination for HSTL Class I signaling. If connected directly to VDDQ, it forces minimum impedance (~30 Ω); direct connection to GND or open-circuit is prohibited and will cause undefined output behavior and potential signal integrity failure.
Can CY7C1523AV18-250BZC operate with only a single clock domain?
Yes - when C and C pins are unconnected, the device defaults to single-clock mode using K and K as both input and output clocks. In this mode, read data is driven on rising edges of K/K, and echo clocks CQ/CQ are generated relative to K/K. All timing parameters shift accordingly, and maximum frequency remains 250 MHz, though system-level deskew capability is lost.
What is the purpose of BWS[1:0] in the 4M × 18 configuration?
BWS[1:0] are active-low byte write select signals that enable partial 18-bit word updates: BWS0 controls D[8:0] (first 9 bits), BWS1 controls D[17:9] (second 9 bits). Both must be asserted to write the full 18-bit word; deasserting either leaves its corresponding 9-bit segment unchanged. This allows efficient small-data updates without read-modify-write cycles.
CY7C1523AV18-250BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1523AV18-250BZC FAQ
1.How can I place an order for CY7C1523AV18-250BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1523AV18-250BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1523AV18-250BZC reliable?
The price and inventory of CY7C1523AV18-250BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1523AV18-250BZC is usually 5 days.
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Once your CY7C1523AV18-250BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1523AV18-250BZC?
For technical support, including CY7C1523AV18-250BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1523AV18-250BZC requirements.
6.How does Aetrix verify that CY7C1523AV18-250BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1523AV18-250BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1523AV18-250BZC meets industry standards.
7.What is the process for return or replacement of CY7C1523AV18-250BZC?
All CY7C1523AV18-250BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1523AV18-250BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1523AV18-250BZC part is unused and in its original packaging.
Return procedure for CY7C1523AV18-250BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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