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Infineon Technologies CY7C1525KV18-250BZXIT

Part No.:
CY7C1525KV18-250BZXIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1525KV18-250BZXIT.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,284

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Product details

Overview

CY7C1525KV18-250BZXIT from Cypress Semiconductor is an 8M × 9 (72-Mbit) QDR® II SRAM with synchronous pipelined architecture, dual independent read/write ports, 250 MHz operation (40 ns clock period), DDR interfaces on both ports (500 Mbps per pin), and 1.8V core / 1.4–1.8V I/O supply. It delivers high-bandwidth buffering for network packet processing in telecom line cards.

For engineers reviewing the CY7C1525KV18-250BZXIT datasheet, CY7C1525KV18-250BZXIT pinout, CY7C1525KV18-250BZXIT application, or CY7C1525KV18-250BZXIT equivalent, key selection criteria include burst depth (2-word), read latency (1 or 1.5 cycles depending on DOFF), echo clock support (CQ/CQ), JTAG 1149.1 compliance, and FBGA-165 package compatibility with high-speed PCB layout constraints.

Technical Context

This SRAM implements true QDR II architecture: separate read and write data paths eliminate bus turnaround delays, enabling concurrent read and write transactions at full bandwidth. Address latching occurs on alternating rising edges of K/K clocks, while C/C clocks control output register timing to minimize skew.

The device integrates a PLL for precise data placement, supports programmable impedance via ZQ pin, and uses synchronous self-timed writes with byte-level write enable (BWS0 only, since x9 configuration). DOFF pin selects between 1-cycle (LOW) and 1.5-cycle (HIGH) read latency modes - critical for deterministic timing in pipeline-constrained systems.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density72 Mbit (8M × 9 organization)
Max Clock Frequency250 MHz - defines 40 ns minimum clock period for timing closure
Data Rate500 Mbps per pin - achieved via DDR on both read and write ports
Read Latency1 or 1.5 cycles - selected by DOFF pin state; impacts pipeline depth in controller design
Core Supply1.8 V ±0.1 V - requires tight-regulation LDO or DC/DC for stable SRAM operation
I/O Supply Range1.4 V to 1.8 V - supports interoperability with 1.5 V or 1.8 V logic families
Package165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count memory routing

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant Pb-free finish (BZXIT suffix).

Pin/TerminalCircuit RoleDesign Meaning
D[8:0]Synchronous write data input9-bit parallel data sampled on rising edge of K clock; enables full-word or partial writes via BWS0
Q[8:0]Synchronous read data output9-bit parallel data driven on rising edge of C/C clocks; aligned with echo clock CQ
K / KInput clock pairRising edges latch addresses and data; K used for read address, K for write address in dual-clock mode
C / COutput clock pairRising edges gate read data outputs; minimizes flight-time mismatch vs. CQ
CQ / CQEcho clock outputsCopy of C/C with matched trace delay; simplifies source-synchronous capture at FPGA/ASIC receiver
DOFFRead latency mode selectHIGH → 1.5-cycle latency; LOW → 1-cycle latency; sets internal pipeline staging
BWS0Byte write selectActive-LOW signal enabling write to all 9 bits; no nibble-level control in x9 config
RPS / WPSPort select inputsActive-LOW enables read or write port independently - essential for depth expansion
ZQImpedance calibration referenceConnects to 240 Ω ±1% external resistor to ground for HSTL output driver tuning
VREFInput reference voltageSupplies mid-supply reference for HSTL input receivers; must be stable at VDDQ/2 ±1%

Key Features

FeatureDesign Value
Independent read/write portsEnables simultaneous access without arbitration delay - critical for full-duplex packet buffering
2-word burst architectureGuarantees two consecutive words per access; eliminates address increment overhead in streaming applications
Echo clock (CQ/CQ) supportProvides source-synchronous timing reference for reliable >500 Mbps data capture at FPGA inputs
JTAG 1149.1 boundary scanEnables in-system test and interconnect verification without physical probe access
Programmable HSTL output driveAllows impedance matching to PCB traces via ZQ calibration - reduces signal integrity margin loss

Applications

Telecom Line Card BufferingNetwork Processor Interface

Use Scenario: Storing ingress/egress packet headers and metadata in 10G/40G Ethernet line cards.

IC Role / Device Role / Timing Role: High-throughput, low-latency shared memory between MAC and switch fabric ASICs.

Use Value: Concurrent read/write avoids serialization bottlenecks; 250 MHz clock sustains ≥9 Gbps aggregate bandwidth across 9-bit interface.

Use Scenario: Acting as instruction/data scratchpad for multi-threaded network processors executing deep-pipeline forwarding algorithms.

IC Role / Device Role / Timing Role: Deterministic-latency memory co-processor supporting dual-issue instruction fetch and context switching.

Use Value: DOFF-selectable 1/1.5-cycle latency allows tuning to processor pipeline stage alignment; echo clocks ensure setup/hold compliance at 500 Mbps.

Baseband Digital Front-EndHigh-Speed Test Equipment Memory

Use Scenario: Real-time buffering of IQ samples between ADC/DAC and FPGA-based digital up/down converters in LTE/5G radio units.

IC Role / Device Role / Timing Role: Synchronous dual-port FIFO with zero turnaround time for continuous sample flow.

Use Value: Separate K/K and C/C clock domains isolate sampling and reconstruction timing; 1.4–1.8V I/O supports mixed-voltage FPGA I/O banks.

Use Scenario: Capturing high-speed serial data streams (e.g., PCIe Gen3, SATA III) for protocol analysis and error injection testing.

IC Role / Device Role / Timing Role: Deep, low-latency capture buffer interfacing directly to SERDES receiver outputs.

Use Value: JTAG boundary scan validates PCB interconnect integrity post-assembly; FBGA-165 enables dense, short-trace routing for signal integrity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T3615L10BG36-bit bus width, 10 ns access time, 3.3V core/I/O, no echo clocks or DOFF latency controlTargets legacy telecom systems requiring wider data path but lower frequency (≤100 MHz)Select when system uses 3.3V logic and prioritizes width over speed or advanced timing features
ISSI IS61WV102418BLL-10BLIAsynchronous SRAM, 1M × 18, 10 ns access, 3.3V/2.5V/1.8V selectable I/O, no DDR or burstSuitable for simpler control-plane buffering where deterministic latency > bandwidthChoose for cost-sensitive, non-pipelined designs lacking clock domain management complexity

Compared with IDT72T3615L10BG and IS61WV102418BLL-10BLI, CY7C1525KV18-250BZXIT uniquely delivers DDR bandwidth at 250 MHz with echo clocks and configurable latency - making it optimal for new high-speed packet-processing architectures where timing precision and concurrency are mandatory.

Availability

CY7C1525KV18-250BZXIT is available at Aetrix Electronics and suitable for telecom infrastructure, network processor co-design, baseband radio development, and high-speed test equipment requiring stable component supply and long-term lifecycle assurance.

Supply support for CY7C1525KV18-250BZXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.

This device belongs to the QDR® II SRAM product line, engineered specifically for deterministic, high-bandwidth memory interfacing in packet-switched systems where concurrent access and sub-ns timing control are essential.

FAQ

What is the function of the DOFF pin on CY7C1525KV18-250BZXIT?

The DOFF (Data Output OFFset) pin selects read latency mode: when asserted HIGH, it enables 1.5-cycle read latency for improved timing margin in systems with longer clock-to-data flight times; when LOW, it configures 1-cycle latency for minimal pipeline delay. This setting directly affects the number of clock cycles between address assertion and valid Q[8:0] output.

Does CY7C1525KV18-250BZXIT support single-ended clocking?

No - the device requires differential clock pairs (K/K and C/C) for proper operation. Both K and K must be driven with complementary signals; using only one degrades timing performance and violates AC specifications. The architecture relies on edge-aligned dual-clock domains to manage read/write address latching and output registration.

How is byte write control implemented in the 8M × 9 configuration?

In CY7C1525KV18-250BZXIT, only BWS0 is used for byte write enable - it controls all 9 bits simultaneously. Unlike x8 or x18 variants, this x9 configuration does not support nibble- or sub-byte write granularity; asserting BWS0 LOW enables writing the full 9-bit word, while HIGH disables all bits in that access.

Can the ZQ pin be left unconnected if impedance calibration is not required?

No - ZQ must be connected to a 240 Ω ±1% resistor to ground for HSTL output driver calibration. Leaving it floating causes undefined output drive strength, leading to signal integrity failures including overshoot, undershoot, and timing violations at 500 Mbps. The calibration occurs automatically at power-up and during operation.

CY7C1525KV18-250BZXIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
8M x 9
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1525KV18-250BZXIT FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1525KV18-250BZXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1525KV18-250BZXIT reliable?

The price and inventory of CY7C1525KV18-250BZXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1525KV18-250BZXIT is usually 5 days.

3.What payment methods are accepted for CY7C1525KV18-250BZXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1525KV18-250BZXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1525KV18-250BZXIT?

CY7C1525KV18-250BZXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1525KV18-250BZXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1525KV18-250BZXIT?

For technical support, including CY7C1525KV18-250BZXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1525KV18-250BZXIT requirements.

6.How does Aetrix verify that CY7C1525KV18-250BZXIT is sourced from the original manufacturer or authorized distributors?

All CY7C1525KV18-250BZXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1525KV18-250BZXIT meets industry standards.

7.What is the process for return or replacement of CY7C1525KV18-250BZXIT?

All CY7C1525KV18-250BZXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1525KV18-250BZXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1525KV18-250BZXIT part is unused and in its original packaging.

Return procedure for CY7C1525KV18-250BZXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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