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Infineon Technologies CY7C1525V18-200BZXC

Part No.:
CY7C1525V18-200BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1525V18-200BZXC.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,766

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Product details

Overview

CY7C1525V18 from Cypress Semiconductor is a 72-Mbit QDR-II SRAM with 8M × 9 organization, designed for high-bandwidth packet buffering in networking ASICs and FPGA-based data path systems. It delivers 500 MT/s effective data rate via DDR interfaces on independent read/write ports, operates at 1.8 V core / 1.4–1.8 V I/O, and uses a 165-ball FBGA (15 × 17 × 1.4 mm) package.

For engineers reviewing the CY7C1525V18 datasheet, CY7C1525V18 pinout, CY7C1525V18 application, or CY7C1525V18 equivalent, key selection criteria include concurrent read/write throughput, echo clock (CQ/CQ) timing support for 250 MHz system synchronization, HSTL-18 I/O compliance, DLL-assisted data placement accuracy, and depth expansion via BWS[0] write select control.

Technical Context

The CY7C1525V18 implements QDR-II architecture with physically separate read and write data paths-no bus turnaround required. Its dual-clock domain uses K/K for address/data capture and C/C for output timing, enabling precise DDR edge alignment and eliminating skew-induced setup/hold violations in backplane or switch fabric designs.

All synchronous inputs (RPS, WPS, BWS[0], D[8:0], A[21:0]) are registered on rising K/K edges; all outputs (Q[8:0], CQ, CQ) are registered on rising C/C edges. The integrated Delay Lock Loop (DLL) dynamically aligns internal data launch to external echo clocks, ensuring ±50 ps data valid window at 250 MHz operation.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (8M × 9 organization), supporting two 9-bit words per access burst
Max Clock Frequency 250 MHz input clock (K/K), enabling 500 MT/s DDR data transfer rate
Core Supply Voltage VDD = 1.8 V ± 0.1 V - defines minimum operating voltage for internal logic and array stability
I/O Supply Range VDDQ = 1.4 V to 1.8 V - sets HSTL-18 compatible output drive strength and termination reference
Package Type 165-ball FBGA (15 × 17 × 1.4 mm) - enables high-pin-count routing with controlled impedance trace lengths
Output Interface HSTL Class I compliant with variable drive strength - ensures signal integrity on 50 Ω transmission lines
JTAG Support IEEE 1149.1-compliant TAP controller - enables boundary-scan testing and in-system debug of memory interconnects

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body height, 0.8 mm ball pitch, RoHS-compliant Pb-free option available.

Pin/Terminal Circuit Role Design Meaning
D[8:0] Synchronous write data input 9-bit parallel data latched on rising K/K edge; supports full-word or partial writes via BWS[0]
Q[8:0] Synchronous read data output 9-bit parallel data driven on rising C/C edge; tri-stated when RPS is deasserted
WPS Write port select Active-low control sampled on K rising edge; enables write transaction initiation and data acceptance
RPS Read port select Active-low control sampled on K rising edge; initiates read burst and enables Q[8:0] drivers
BWS[0] Byte write select Active-low 9-bit write mask sampled on K/K edge; selects full 9-bit word for write (no nibble-level control)
K, K Input clocks Differential pair for address/data/control capture; only rising edges used for synchronous registration
C, C Output clocks Differential pair for Q[8:0] and echo clock timing; minimizes flight-time mismatch across memory subsystem
CQ, CQ Echo clocks Free-running copies of C/C synchronized to output clock domain; simplify receiver capture in high-speed SerDes links
ZQ Impedance calibration Connects to external 240 Ω resistor to ground to tune Q[8:0]/CQ/CQ output driver impedance to 48 Ω ±10%
DOFF DLL disable Active-low pin; grounding disables internal DLL, reverting to fixed delay path (timing parameters change)
TCK/TMS/TDI/TDO JTAG interface IEEE 1149.1 test access port for boundary scan, device ID, and optional debug features

Key Features

Feature Design Value
Independent read/write ports Eliminates bus turnaround overhead and enables true simultaneous access-critical for pipeline forwarding in Layer 3 switches
2-word burst architecture Delivers two 9-bit words per clock cycle, doubling effective bandwidth without increasing clock frequency or pin count
Echo clock (CQ/CQ) support Provides receiver-synchronized timing reference, reducing PCB routing complexity and improving setup/hold margin by >120 ps
On-chip DLL Compensates for process/voltage/temperature variation to maintain <±50 ps data-eye centering at 250 MHz operation
HSTL-18 I/O with ZQ calibration Enables impedance-matched signaling on dense backplanes; supports 50 Ω trace design with <0.5 dB insertion loss up to 1 GHz

Applications

Telecom Line Card Buffering Network Processor Interface

Use Scenario: High-speed packet buffering between SERDES PHY and network processor on OC-192/STM-64 line cards.

IC Role / Device Role / Timing Role: Dedicated QDR-II SRAM providing zero-latency, non-blocking read/write access for ingress/egress queues.

Use Value: Concurrent 500 MT/s read and write throughput eliminates arbitration stalls, sustaining 40 Gbps full-duplex line-rate processing.

Use Scenario: External cache for multi-core network processors handling deep packet inspection and flow classification.

IC Role / Device Role / Timing Role: Burst-access memory interfacing directly to NPU's QDR-II controller via matched-length C/C and CQ/CQ traces.

Use Value: 250 MHz clock domain alignment with echo clocks reduces timing closure effort by eliminating external deskew ICs.

Switch Fabric Lookup Table FPGA-Based Protocol Accelerator

Use Scenario: Storing MAC address tables and VLAN mapping entries in modular Ethernet chassis switches.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as shared lookup table accessed simultaneously by ingress and egress switching engines.

Use Value: Full data coherency ensures latest forwarding entries are always returned-no stale-data race conditions during updates.

Use Scenario: Off-chip memory for FPGA-accelerated TCP/IP stack or TLS offload engines requiring low-latency random access.

IC Role / Device Role / Timing Role: High-bandwidth buffer bridging FPGA fabric and external PHY layers using HSTL-18 signaling.

Use Value: ZQ-calibrated outputs maintain signal integrity across 10+ inch PCB runs, meeting IEEE 802.3ap CAUI-10 jitter specs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L10BG 36-Mbit (2M × 18), 167 MHz max clock, LVDS I/O, no echo clocks or DLL Limited to lower-bandwidth control-plane buffers; lacks CQ/CQ for high-speed capture Select when system clock ≤167 MHz and board-level deskew is handled externally
ISSI IS61WV102418B 18-Mbit (512K × 36), asynchronous interface, 15 ns access, CMOS I/O Not suitable for pipelined burst applications; no DDR or concurrent port capability Use only for legacy control storage where timing predictability outweighs bandwidth needs

Compared with IDT72T3615L10BG and IS61WV102418B, CY7C1525V18 uniquely supports 250 MHz DDR operation with echo clocks and DLL-enabling deterministic 500 MT/s throughput in modern packet-processing systems where timing margin is constrained.

Availability

CY7C1525V18 is available at Aetrix Electronics and suitable for telecom line card buffering, network processor interfacing, switch fabric lookup tables, and FPGA-based protocol acceleration requiring stable component supply across extended product lifecycles.

Supply support for CY7C1525V18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.

CY7C1525V18 belongs to the QDR-II SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in packet-switched infrastructure equipment.

FAQ

What is the function of the ZQ pin on CY7C1525V18?

The ZQ pin calibrates output driver impedance for Q[8:0], CQ, and CQ signals. When connected to a 240 Ω resistor to ground, it sets output impedance to 48 Ω ±10%, matching standard 50 Ω PCB traces. Direct connection to VDDQ enables minimum impedance mode; floating or grounding ZQ is prohibited and causes undefined behavior.

Can CY7C1525V18 operate without the DLL enabled?

Yes-asserting DOFF (low) disables the internal DLL, reverting to a fixed-delay output path. However, timing parameters shift significantly: tAC increases to 2.8 ns (vs. 1.9 ns with DLL), and tDQSQ widens to ±150 ps. This mode is only recommended for systems with relaxed timing margins or where DLL lock instability occurs.

How does BWS[0] differ from NWS pins in CY7C1525V18?

CY7C1525V18 uses only BWS[0] (byte write select), not NWS pins. BWS[0] is active-low and controls the entire 9-bit D[8:0] word-no nibble-level granularity. Unlike CY7C1510V18 (which has NWS0/NWS1 for 4-bit nibbles), CY7C1525V18's 9-bit width requires byte-level masking only, simplifying write control logic in 9-bit-aligned systems.

Is CY7C1525V18 pin-compatible with other devices in the CY7C15xxV18 family?

No-while all share the same 165-ball FBGA footprint, pin functions differ across configurations. For example, CY7C1510V18 uses NWS0/NWS1 instead of BWS[0], and CY7C1514V18 adds BWS[1–3]. Address width also varies (A[21:0] for CY7C1525V18 vs. A[19:0] for CY7C1514V18), making direct replacement impossible without PCB redesign.

CY7C1525V18-200BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
8M x 9
Memory Interface:
Parallel
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1525V18-200BZXC FAQ

1.How can I place an order for CY7C1525V18-200BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1525V18-200BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1525V18-200BZXC reliable?

The price and inventory of CY7C1525V18-200BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1525V18-200BZXC is usually 5 days.

3.What payment methods are accepted for CY7C1525V18-200BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1525V18-200BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1525V18-200BZXC?

CY7C1525V18-200BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1525V18-200BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1525V18-200BZXC?

For technical support, including CY7C1525V18-200BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1525V18-200BZXC requirements.

6.How does Aetrix verify that CY7C1525V18-200BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1525V18-200BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1525V18-200BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1525V18-200BZXC?

All CY7C1525V18-200BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1525V18-200BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1525V18-200BZXC part is unused and in its original packaging.

Return procedure for CY7C1525V18-200BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1525V18-200BZXC Tags

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