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Infineon Technologies CY7C1525V18-250BZXC

Part No.:
CY7C1525V18-250BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1525V18-250BZXC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,585

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Product details

Overview

CY7C1525V18 from Cypress Semiconductor is an 8M × 9 (72-Mbit), 1.8V QDR-II SRAM with separate read/write ports, 250 MHz clock operation, DDR interfaces on both ports (500 MT/s effective data rate), and 165-ball FBGA (15 × 17 × 1.4 mm) packaging. It delivers concurrent read/write transactions for high-throughput packet buffering in network line cards.

For engineers reviewing the CY7C1525V18 datasheet, CY7C1525V18 pinout, CY7C1525V18 application, or CY7C1525V18 equivalent, key selection criteria include burst depth (2-word), HSTL-18 I/O compatibility, DLL-assisted timing alignment, echo clock support (CQ/CQ), and x9 data width for parity-aware memory systems.

Technical Context

The CY7C1525V18 implements a synchronous pipelined QDR-II architecture with fully independent read and write ports sharing a multiplexed 22-bit address bus. Address latching occurs on alternate rising edges of K/K clocks, enabling concurrent access without bus turnaround.

It uses dual input clocks (K/K) for write/read control and dual output clocks (C/C) with echo clocks (CQ/CQ) to deskew data capture at the controller. The integrated Delay Lock Loop (DLL) aligns Q[8:0] outputs to C/C edges with sub-cycle precision, supporting reliable 500 MT/s transfers.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (8M × 9 organization) - supports 9-bit wide data paths with embedded parity handling
Max Clock Frequency 250 MHz - enables 500 MT/s DDR throughput per port, critical for 10G+ packet buffer latency budgets
Core Supply (VDD) 1.8 V ± 0.1 V - low-voltage core reduces dynamic power in high-speed memory subsystems
I/O Supply (VDDQ) 1.4 V to 1.8 V - configurable HSTL-18 output drive compatible with FPGA/ASIC memory controllers
Burst Length 2-word burst per access - fixed minimal latency burst optimized for pipeline efficiency in telecom buffers
Timing Reference DLL-synchronized outputs - eliminates external trace-length matching requirements for CQ/Q[8:0] routing
Package 165-ball FBGA (15 × 17 × 1.4 mm) - standard footprint for high-density PCB layouts in networking hardware

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
D[8:0] Synchronous write data input 9-bit parallel data sampled on rising edge of K clock; supports full-width writes or byte-selectable via BWS0
Q[8:0] Synchronous read data output 9-bit parallel data driven on rising edges of C/C clocks; tri-stated when RPS is deasserted
RPS Read port select (active LOW) Enables read transaction initiation; controls Q[8:0] driver state and burst sequencing
WPS Write port select (active LOW) Enables write transaction initiation; gates D[8:0] sampling and internal write path activation
BWS0 Byte write select 0 (active LOW) Selects all 9 bits of D[8:0] for write; required for full-word updates in x9 configuration
K / K Positive/negative input clocks Edge-aligned clocks for address/data/control sampling; K used for read address, K for write address
C / C Positive/negative output clocks Deskewed clocks for Q[8:0] output timing; referenced by CQ/CQ for controller capture alignment
CQ / CQ Echo clocks (referenced to C/C) Free-running copies of C/C with matched flight time; simplify source-synchronous data capture at controller
ZQ Output impedance calibration input Connects to external 240 Ω resistor to ground to tune Q[8:0]/CQ/CQ output impedance to 48 Ω (0.2 × RQ)
DOFF DLL disable (active LOW) Pulling low disables internal DLL; alters output timing margins - used only for debug or legacy timing modes
TCK/TMS/TDI/TDO JTAG 1149.1 test interface Supports boundary scan testing and in-system programming of configuration registers

Key Features

Feature Design Value
Independent read/write ports Eliminates data bus turnaround delay - enables true simultaneous read and write operations without arbitration overhead
2-word burst architecture Fixed minimal-latency burst delivers two 9-bit words per clock cycle, optimizing bandwidth utilization in streaming applications
HSTL-18 compatible I/O Variable-drive output buffers meet JEDEC HSTL Class I specifications at 1.4–1.8 V VDDQ, ensuring signal integrity up to 500 MT/s
Integrated Delay Lock Loop (DLL) Aligns Q[8:0] output edges to C/C clock transitions within ±50 ps, removing need for precise PCB trace length matching
Echo clock support (CQ/CQ) Provides controller with phase-matched clock copies to sample Q[8:0], reducing setup/hold margin requirements by >150 ps
JTAG 1149.1 compliance Enables production-level boundary scan testing and in-field diagnostics without requiring additional test fixtures

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: High-speed packet buffering in 10G Ethernet switch fabric ASICs where ingress/egress traffic must be stored and forwarded with sub-100 ns latency.

IC Role / Device Role / Timing Role: Dedicated QDR-II SRAM acting as dual-port first-level packet buffer, accepting write data from ingress pipeline while simultaneously supplying read data to egress scheduler.

Use Value: 250 MHz clock + DDR interface delivers 900 MB/s sustained bandwidth per port, meeting line-rate buffering demands for 10GBase-R traffic.

Use Scenario: Shared memory resource in multi-protocol telecom line cards (SONET/SDH, OTN) requiring deterministic access for multiple DSP cores and framer ICs.

IC Role / Device Role / Timing Role: Centralized x9 memory node providing parity-protected storage for frame headers, payload pointers, and status tables across heterogeneous processing units.

Use Value: Independent RPS/WPS control allows time-multiplexed access scheduling between DSPs and framers without bus contention or arbitration logic.

High-Speed Test Equipment Memory Avionics Data Acquisition Buffer

Use Scenario: Real-time waveform capture and analysis in automated test equipment (ATE) platforms sampling at ≥1 GS/s with deep memory depth requirements.

IC Role / Device Role / Timing Role: Burst-mode acquisition buffer interfacing directly to high-speed ADCs and FPGA-based correlators, using CQ/CQ for jitter-tolerant data capture.

Use Value: DLL-synchronized outputs and echo clocks reduce timing uncertainty to <100 ps, enabling reliable capture at 500 MT/s without custom PLL tuning.

Use Scenario: Radiation-tolerant data logging in flight control systems capturing sensor telemetry (IMU, pressure, temperature) at 100 kHz with guaranteed write persistence.

IC Role / Device Role / Timing Role: Non-volatile write-buffer staging memory that accepts burst writes from sensor interface ASICs and feeds deterministic reads to fault-monitoring processors.

Use Value: Synchronous self-timed writes ensure atomic 2-word updates even under voltage droop, preventing partial-write corruption during transient events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L10BG 36-Mbit (2M × 18), 167 MHz max, LVDS I/O, no echo clocks Limited to lower bandwidth (334 MT/s) and lacks CQ/CQ for simplified controller design Choose when system clock budget is ≤167 MHz and board-level skew compensation is feasible
ISSI IS61WV102418B 18-Mbit (512K × 36), asynchronous interface, 15 ns access, no DDR No concurrent read/write capability; requires external arbitration and bus turnaround logic Choose only for cost-sensitive, non-real-time buffering where latency >50 ns is acceptable

Compared with IDT72T3615L10BG and IS61WV102418B, CY7C1525V18 provides 2.1× higher bandwidth than the IDT part and enables true zero-turnaround operation unlike the ISSI part - essential for deterministic latency in packet-switched systems.

Availability

CY7C1525V18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, high-speed test equipment memory, and avionics data acquisition buffering requiring stable component supply across extended product lifecycles.

Supply support for CY7C1525V18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets, with headquarters in San Jose, CA.

CY7C1525V18 belongs to the QDR-II SRAM product line, engineered specifically for deterministic, high-bandwidth memory subsystems in networking infrastructure and real-time signal processing equipment.

FAQ

What is the minimum VDDQ voltage supported for CY7C1525V18 operation?

The device supports VDDQ from 1.4 V to 1.8 V. At 1.4 V, HSTL-18 output drive strength is reduced but remains compliant with JEDEC HSTL Class I thresholds; full drive capability requires ≥1.5 V. Core VDD must remain at 1.8 V ± 0.1 V regardless of VDDQ setting.

Can CY7C1525V18 operate without the DLL enabled?

Yes - asserting DOFF (low) disables the DLL, reverting to basic clock-to-output timing. However, tAC increases from 1.2 ns to 2.4 ns, and setup/hold margins shrink significantly; this mode is intended only for debug or legacy timing validation, not production use.

How many address bits are required for CY7C1525V18's 8M × 9 organization?

22 address bits (A21:A0) are required. Internally, the device is organized as two 4M × 9 arrays; the address bus is multiplexed for both read and write ports, with read addresses latched on K and write addresses on K rising edges.

Is ZQ pin mandatory for impedance calibration?

ZQ must be connected - either to a 240 Ω resistor to ground (for 48 Ω output impedance tuning) or directly to VDDQ (for minimum impedance mode). Leaving ZQ floating or connecting it to GND violates the absolute maximum ratings and may cause output driver failure.

CY7C1525V18-250BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
8M x 9
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1525V18-250BZXC FAQ

1.How can I place an order for CY7C1525V18-250BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1525V18-250BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1525V18-250BZXC reliable?

The price and inventory of CY7C1525V18-250BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1525V18-250BZXC is usually 5 days.

3.What payment methods are accepted for CY7C1525V18-250BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1525V18-250BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1525V18-250BZXC?

CY7C1525V18-250BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1525V18-250BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1525V18-250BZXC?

For technical support, including CY7C1525V18-250BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1525V18-250BZXC requirements.

6.How does Aetrix verify that CY7C1525V18-250BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1525V18-250BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1525V18-250BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1525V18-250BZXC?

All CY7C1525V18-250BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1525V18-250BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1525V18-250BZXC part is unused and in its original packaging.

Return procedure for CY7C1525V18-250BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1525V18-250BZXC Tags

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