Infineon Technologies CY7C1526KV18-300BZXC
- Part No.:
- CY7C1526KV18-300BZXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1526KV18-300BZXC.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:4,445
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Product details
Overview
CY7C1526KV18-300BZXC from Cypress Semiconductor is an 8M × 9 (72-Mbit), 333 MHz QDR® II SRAM with separate read/write ports, DDR interfaces on both ports (666 MHz data rate), 1.8 V core supply, and 1.4–1.8 V I/O supply. It implements four-word burst architecture with 1.5-cycle read latency when DOFF is HIGH and supports concurrent read/write transactions in high-bandwidth networking buffers and packet memory applications.
For engineers reviewing the CY7C1526KV18-300BZXC datasheet, CY7C1526KV18-300BZXC pinout, CY7C1526KV18-300BZXC application, or CY7C1526KV18-300BZXC equivalent, key selection criteria include its 165-ball FBGA package, echo clocks (CQ/CQ), JTAG 1149.1 compliance, programmable impedance, and synchronous self-timed write capability.
Technical Context
The device uses a dual-clock DDR architecture with independent K/K inputs for address/data capture and C/C outputs for data launch, enabling precise timing control and eliminating bus turnaround. Its internal 2M × 9 × 4 array organization supports depth expansion via RPS/WPS and byte-level write masking through BWS0.
It integrates a PLL for accurate data placement, HSTL-compatible output drivers with variable drive strength, and echo clocks (CQ/CQ) to simplify source-synchronous data capture at 666 MHz. The DOFF pin selects between 1.5-cycle (HIGH) and 1-cycle (LOW) read latency modes, aligning with system timing budgets.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (8M × 9 configuration) |
| Max Clock Frequency | 333 MHz - enables 666 MT/s DDR throughput per port |
| Read Latency | 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW) - configurable for timing closure |
| Supply Voltages | VDD = 1.8 V ±0.1 V; VDDQ = 1.4–1.8 V - supports mixed-voltage I/O interfacing |
| Burst Length | Four-word burst - reduces address bus toggling frequency by 4× vs. single-word access |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count memory devices |
| Standards Compliance | JTAG IEEE 1149.1 - enables boundary scan testing in production and debug |
Pinout & Package
Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[8:0] | Synchronous write data input | 9-bit parallel data sampled on rising edge of K clock during active WPS |
| Q[8:0] | Synchronous read data output | 9-bit parallel data launched on rising edges of C/C clocks during active RPS |
| RPS | Read port select | Active-low signal enabling read access and driving Q[8:0] outputs |
| WPS | Write port select | Active-low signal enabling write access and sampling D[8:0] |
| BWS0 | Byte write select | Active-low mask controlling whether D[8:0] is written (CY7C1526KV18 uses single BWS0) |
| C, C | Output data clocks | Differential pair used to clock Q[8:0] outputs; enables deskewing across PCB traces |
| K, K | Input address/data clocks | Differential pair capturing A[20:0], D[8:0], RPS, WPS on rising edges |
| CQ, CQ | Echo clocks | Source-synchronous copies of C/C, routed with Q[8:0] to simplify controller capture timing |
| DOFF | Read latency mode control | HIGH selects 1.5-cycle latency; LOW selects 1-cycle latency for QDR I compatibility |
| VDD, VDDQ, VSS | Power/ground terminals | Separate 1.8 V core (VDD) and 1.4–1.8 V I/O (VDDQ) supplies with distributed ground balls |
Key Features
| Feature | Design Value |
|---|---|
| Independent read/write ports | Enables true concurrent access without bus turnaround, doubling effective bandwidth in full-duplex systems |
| Four-word burst architecture | Reduces address bus frequency by 75%, easing routing and timing closure in high-speed PCB layouts |
| Echo clocks (CQ/CQ) | Deliver source-synchronous timing references aligned with Q[8:0] outputs, relaxing controller setup/hold margins |
| Programmable output drive | HSTL-compatible buffers with adjustable strength reduce signal integrity issues and EMI in dense memory subsystems |
| Synchronous self-timed writes | On-chip write sequencing eliminates external write pulse timing constraints and simplifies controller logic |
Applications
| High-Speed Packet Buffering | Network Switch Fabric Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/3 switches operating at 10+ Gbps line rates. IC Role / Device Role / Timing Role: Dual-port SRAM acting as a non-blocking, low-latency buffer between ingress parser and egress scheduler logic. Use Value: Concurrent read/write capability enables simultaneous header lookup (read) and packet reassembly (write) without arbitration delay. |
Use Scenario: Providing shared memory for crossbar arbitration in modular chassis-based routers with distributed forwarding engines. IC Role / Device Role / Timing Role: High-bandwidth memory node supporting multiple parallel fabric ports with deterministic 1.5-cycle read response. Use Value: Four-word burst and echo clocks ensure predictable timing across multi-slot backplanes with trace-length mismatches. |
| Telecom Baseband Processing | Test Equipment Pattern Memory |
|
Use Scenario: Holding channel estimation coefficients and FFT intermediate results in LTE/5G baseband units requiring real-time processing. IC Role / Device Role / Timing Role: Low-latency, pipelined memory interfacing directly with FPGA-based DSP blocks using source-synchronous C/C clocks. Use Value: DOFF-selectable latency allows tuning between throughput (1.5-cycle) and pipeline depth (1-cycle) based on algorithm stage. |
Use Scenario: Storing stimulus/response vectors in high-speed automated test equipment (ATE) for SoC validation at >500 MHz. IC Role / Device Role / Timing Role: Deterministic-access memory providing glitch-free vector streaming to pin electronics via DDR interfaces. Use Value: JTAG 1149.1 support enables in-system verification of memory integrity and interconnect before test execution. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T36150 | 36-Mbit (2M × 18), 300 MHz max, 1.5 V core, no echo clocks, LVDS I/O | Limited density and lack of CQ/CQ require tighter board layout control and reduce margin for flight-time skew | Select when lower density suffices and LVDS interface matches existing PHY design |
| ISSI IS61WV102418B | 18-Mbit (512K × 36), 200 MHz, 3.3 V only, single-port, asynchronous | No concurrent access, no DDR, no burst - requires external arbitration and limits peak bandwidth to ~400 MB/s | Select only for cost-sensitive, non-real-time buffering where latency and bandwidth are secondary |
Compared with IDT72T36150 and IS61WV102418B, CY7C1526KV18-300BZXC delivers 4× higher density, 1.67× higher clock rate, and unique echo-clock timing support-making it the only option capable of sustaining 666 MT/s full-duplex operation in telecom and test equipment designs.
Availability
CY7C1526KV18-300BZXC is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, and telecom baseband processing requiring stable component supply and long-term industrial availability.
Supply support for CY7C1526KV18-300BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
CY7C1526KV18 belongs to Cypress's QDR II SRAM product line, engineered specifically for deterministic, low-latency, full-duplex memory access in packet infrastructure and high-speed test systems.
FAQ
What is the function of the DOFF pin on CY7C1526KV18-300BZXC?
The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle read latency for optimal QDR II performance; when LOW, it reverts to 1-cycle latency compatible with legacy QDR I timing. This setting is sampled synchronously on the rising edge of the K clock and remains active until changed.
Can CY7C1526KV18-300BZXC operate with only a single clock domain?
Yes. The device supports single-clock-domain operation by tying C to K and C to K, allowing all data transfers to be referenced to the K clock only. In this mode, Q[8:0] outputs are launched on K/K edges instead of C/C, simplifying clock distribution at the cost of reduced deskew capability.
How does the BWS0 signal function in the CY7C1526KV18-300BZXC?
BWS0 (Byte Write Select 0) is an active-low synchronous control that enables or masks the entire 9-bit D[8:0] input word during write operations. When deasserted (HIGH), the corresponding write transaction is ignored; when asserted (LOW), D[8:0] is written to the addressed location. Unlike wider variants, CY7C1526KV18 uses only BWS0 - no BWS1–BWS3.
Is the 165-ball FBGA package of CY7C1526KV18-300BZXC lead-free?
Yes. The -BZXC suffix denotes a Pb-free, RoHS-compliant 165-ball FBGA package with NiPdAu surface finish. Cypress specifies this variant for industrial temperature range (–40°C to +85°C) and guarantees compatibility with standard lead-free reflow profiles (J-STD-020).
CY7C1526KV18-300BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 8M x 9
- Memory Interface:
- Parallel
- Clock Frequency:
- 300 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1526KV18-300BZXC FAQ
1.How can I place an order for CY7C1526KV18-300BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1526KV18-300BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1526KV18-300BZXC reliable?
The price and inventory of CY7C1526KV18-300BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1526KV18-300BZXC is usually 5 days.
3.What payment methods are accepted for CY7C1526KV18-300BZXC?
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CY7C1526KV18-300BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1526KV18-300BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1526KV18-300BZXC?
For technical support, including CY7C1526KV18-300BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1526KV18-300BZXC requirements.
6.How does Aetrix verify that CY7C1526KV18-300BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1526KV18-300BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1526KV18-300BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1526KV18-300BZXC?
All CY7C1526KV18-300BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1526KV18-300BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1526KV18-300BZXC part is unused and in its original packaging.
Return procedure for CY7C1526KV18-300BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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