Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY7C1526KV18-300BZXC

Part No.:
CY7C1526KV18-300BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1526KV18-300BZXC.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,445

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C1526KV18-300BZXC from Cypress Semiconductor is an 8M × 9 (72-Mbit), 333 MHz QDR® II SRAM with separate read/write ports, DDR interfaces on both ports (666 MHz data rate), 1.8 V core supply, and 1.4–1.8 V I/O supply. It implements four-word burst architecture with 1.5-cycle read latency when DOFF is HIGH and supports concurrent read/write transactions in high-bandwidth networking buffers and packet memory applications.

For engineers reviewing the CY7C1526KV18-300BZXC datasheet, CY7C1526KV18-300BZXC pinout, CY7C1526KV18-300BZXC application, or CY7C1526KV18-300BZXC equivalent, key selection criteria include its 165-ball FBGA package, echo clocks (CQ/CQ), JTAG 1149.1 compliance, programmable impedance, and synchronous self-timed write capability.

Technical Context

The device uses a dual-clock DDR architecture with independent K/K inputs for address/data capture and C/C outputs for data launch, enabling precise timing control and eliminating bus turnaround. Its internal 2M × 9 × 4 array organization supports depth expansion via RPS/WPS and byte-level write masking through BWS0.

It integrates a PLL for accurate data placement, HSTL-compatible output drivers with variable drive strength, and echo clocks (CQ/CQ) to simplify source-synchronous data capture at 666 MHz. The DOFF pin selects between 1.5-cycle (HIGH) and 1-cycle (LOW) read latency modes, aligning with system timing budgets.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (8M × 9 configuration)
Max Clock Frequency 333 MHz - enables 666 MT/s DDR throughput per port
Read Latency 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW) - configurable for timing closure
Supply Voltages VDD = 1.8 V ±0.1 V; VDDQ = 1.4–1.8 V - supports mixed-voltage I/O interfacing
Burst Length Four-word burst - reduces address bus toggling frequency by 4× vs. single-word access
Package 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count memory devices
Standards Compliance JTAG IEEE 1149.1 - enables boundary scan testing in production and debug

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
D[8:0] Synchronous write data input 9-bit parallel data sampled on rising edge of K clock during active WPS
Q[8:0] Synchronous read data output 9-bit parallel data launched on rising edges of C/C clocks during active RPS
RPS Read port select Active-low signal enabling read access and driving Q[8:0] outputs
WPS Write port select Active-low signal enabling write access and sampling D[8:0]
BWS0 Byte write select Active-low mask controlling whether D[8:0] is written (CY7C1526KV18 uses single BWS0)
C, C Output data clocks Differential pair used to clock Q[8:0] outputs; enables deskewing across PCB traces
K, K Input address/data clocks Differential pair capturing A[20:0], D[8:0], RPS, WPS on rising edges
CQ, CQ Echo clocks Source-synchronous copies of C/C, routed with Q[8:0] to simplify controller capture timing
DOFF Read latency mode control HIGH selects 1.5-cycle latency; LOW selects 1-cycle latency for QDR I compatibility
VDD, VDDQ, VSS Power/ground terminals Separate 1.8 V core (VDD) and 1.4–1.8 V I/O (VDDQ) supplies with distributed ground balls

Key Features

Feature Design Value
Independent read/write ports Enables true concurrent access without bus turnaround, doubling effective bandwidth in full-duplex systems
Four-word burst architecture Reduces address bus frequency by 75%, easing routing and timing closure in high-speed PCB layouts
Echo clocks (CQ/CQ) Deliver source-synchronous timing references aligned with Q[8:0] outputs, relaxing controller setup/hold margins
Programmable output drive HSTL-compatible buffers with adjustable strength reduce signal integrity issues and EMI in dense memory subsystems
Synchronous self-timed writes On-chip write sequencing eliminates external write pulse timing constraints and simplifies controller logic

Applications

High-Speed Packet Buffering Network Switch Fabric Memory

Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/3 switches operating at 10+ Gbps line rates.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as a non-blocking, low-latency buffer between ingress parser and egress scheduler logic.

Use Value: Concurrent read/write capability enables simultaneous header lookup (read) and packet reassembly (write) without arbitration delay.

Use Scenario: Providing shared memory for crossbar arbitration in modular chassis-based routers with distributed forwarding engines.

IC Role / Device Role / Timing Role: High-bandwidth memory node supporting multiple parallel fabric ports with deterministic 1.5-cycle read response.

Use Value: Four-word burst and echo clocks ensure predictable timing across multi-slot backplanes with trace-length mismatches.

Telecom Baseband Processing Test Equipment Pattern Memory

Use Scenario: Holding channel estimation coefficients and FFT intermediate results in LTE/5G baseband units requiring real-time processing.

IC Role / Device Role / Timing Role: Low-latency, pipelined memory interfacing directly with FPGA-based DSP blocks using source-synchronous C/C clocks.

Use Value: DOFF-selectable latency allows tuning between throughput (1.5-cycle) and pipeline depth (1-cycle) based on algorithm stage.

Use Scenario: Storing stimulus/response vectors in high-speed automated test equipment (ATE) for SoC validation at >500 MHz.

IC Role / Device Role / Timing Role: Deterministic-access memory providing glitch-free vector streaming to pin electronics via DDR interfaces.

Use Value: JTAG 1149.1 support enables in-system verification of memory integrity and interconnect before test execution.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T36150 36-Mbit (2M × 18), 300 MHz max, 1.5 V core, no echo clocks, LVDS I/O Limited density and lack of CQ/CQ require tighter board layout control and reduce margin for flight-time skew Select when lower density suffices and LVDS interface matches existing PHY design
ISSI IS61WV102418B 18-Mbit (512K × 36), 200 MHz, 3.3 V only, single-port, asynchronous No concurrent access, no DDR, no burst - requires external arbitration and limits peak bandwidth to ~400 MB/s Select only for cost-sensitive, non-real-time buffering where latency and bandwidth are secondary

Compared with IDT72T36150 and IS61WV102418B, CY7C1526KV18-300BZXC delivers 4× higher density, 1.67× higher clock rate, and unique echo-clock timing support-making it the only option capable of sustaining 666 MT/s full-duplex operation in telecom and test equipment designs.

Availability

CY7C1526KV18-300BZXC is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, and telecom baseband processing requiring stable component supply and long-term industrial availability.

Supply support for CY7C1526KV18-300BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1526KV18 belongs to Cypress's QDR II SRAM product line, engineered specifically for deterministic, low-latency, full-duplex memory access in packet infrastructure and high-speed test systems.

FAQ

What is the function of the DOFF pin on CY7C1526KV18-300BZXC?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle read latency for optimal QDR II performance; when LOW, it reverts to 1-cycle latency compatible with legacy QDR I timing. This setting is sampled synchronously on the rising edge of the K clock and remains active until changed.

Can CY7C1526KV18-300BZXC operate with only a single clock domain?

Yes. The device supports single-clock-domain operation by tying C to K and C to K, allowing all data transfers to be referenced to the K clock only. In this mode, Q[8:0] outputs are launched on K/K edges instead of C/C, simplifying clock distribution at the cost of reduced deskew capability.

How does the BWS0 signal function in the CY7C1526KV18-300BZXC?

BWS0 (Byte Write Select 0) is an active-low synchronous control that enables or masks the entire 9-bit D[8:0] input word during write operations. When deasserted (HIGH), the corresponding write transaction is ignored; when asserted (LOW), D[8:0] is written to the addressed location. Unlike wider variants, CY7C1526KV18 uses only BWS0 - no BWS1–BWS3.

Is the 165-ball FBGA package of CY7C1526KV18-300BZXC lead-free?

Yes. The -BZXC suffix denotes a Pb-free, RoHS-compliant 165-ball FBGA package with NiPdAu surface finish. Cypress specifies this variant for industrial temperature range (–40°C to +85°C) and guarantees compatibility with standard lead-free reflow profiles (J-STD-020).

CY7C1526KV18-300BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
8M x 9
Memory Interface:
Parallel
Clock Frequency:
300 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1526KV18-300BZXC FAQ

1.How can I place an order for CY7C1526KV18-300BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1526KV18-300BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1526KV18-300BZXC reliable?

The price and inventory of CY7C1526KV18-300BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1526KV18-300BZXC is usually 5 days.

3.What payment methods are accepted for CY7C1526KV18-300BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1526KV18-300BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1526KV18-300BZXC?

CY7C1526KV18-300BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1526KV18-300BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1526KV18-300BZXC?

For technical support, including CY7C1526KV18-300BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1526KV18-300BZXC requirements.

6.How does Aetrix verify that CY7C1526KV18-300BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1526KV18-300BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1526KV18-300BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1526KV18-300BZXC?

All CY7C1526KV18-300BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1526KV18-300BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1526KV18-300BZXC part is unused and in its original packaging.

Return procedure for CY7C1526KV18-300BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1526KV18-300BZXC Tags

  • CY7C1526KV18-300BZXC
  • CY7C1526KV18-300BZXC PDF
  • CY7C1526KV18-300BZXC Datasheet
  • CY7C1526KV18-300BZXC Specifications
  • CY7C1526KV18-300BZXC Images
  • Infineon Technologies
  • Infineon Technologies CY7C1526KV18-300BZXC
  • Buy CY7C1526KV18-300BZXC
  • CY7C1526KV18-300BZXC Price
  • CY7C1526KV18-300BZXC Distributor
  • CY7C1526KV18-300BZXC Supplier
  • CY7C1526KV18-300BZXC Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER