Infineon Technologies CY7C1526KV18-333BZXC

Overview

CY7C1526KV18-333BZXC from Cypress Semiconductor is an 8M × 9 (72-Mbit), 333 MHz QDR® II SRAM with separate read/write DDR ports, four-word burst architecture, and 1.8 V core / 1.4–1.8 V I/O supply - deployed in high-bandwidth packet buffering for network line cards and switch fabric controllers.

For engineers reviewing the CY7C1526KV18-333BZXC datasheet, CY7C1526KV18-333BZXC pinout, CY7C1526KV18-333BZXC application, or CY7C1526KV18-333BZXC equivalent, key selection criteria include concurrent read/write throughput, echo clock (CQ/CQ) timing margin, DOFF-configurable 1.5-cycle vs. 1-cycle read latency, and FBGA-165 package compatibility with high-speed PCB routing constraints.

Technical Context

This QDR II SRAM implements fully independent synchronous read and write pipelines with dual DDR interfaces - data transfers occur on both rising edges of K/K (write) and C/C (read) clocks, enabling 666 MT/s effective bandwidth at 333 MHz. Address latching uses a single multiplexed A[20:0] bus sampled on alternating K-clock edges for depth expansion support.

The device integrates a PLL for precise output data placement, JTAG 1149.1 test access, programmable HSTL drive strength, and on-chip self-timed writes. Read latency is configurable via DOFF: 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW), maintaining full data coherency across concurrent transactions without bus turnaround.

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, 0.8 mm ball pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with IDT72T3615L5 and IS61WV102416BLL-15BLI, CY7C1526KV18-333BZXC uniquely delivers 333 MHz QDR II performance with echo clocks and configurable latency - essential for new designs targeting >500 MT/s sustained memory throughput and sub-nanosecond timing closure.

Availability

CY7C1526KV18-333BZXC is available at Aetrix Electronics and suitable for network packet buffering, switch fabric controllers, telecom baseband processing, and high-speed test equipment requiring stable component supply and long-term industrial availability.

Supply support for CY7C1526KV18-333BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1526KV18 belongs to Cypress's QDR II SRAM product line, engineered specifically for deterministic, high-bandwidth memory interfacing in networking and telecom infrastructure where concurrent access, low latency, and timing repeatability are critical.

FAQ

What is the function of the DOFF pin on CY7C1526KV18-333BZXC?

The DOFF (Data Output OFF) pin configures read latency: when asserted HIGH, it enables 1.5-cycle latency mode for optimized throughput and pipeline efficiency; when LOW, it selects 1-cycle latency for minimal access delay. This setting is sampled at power-up and remains static during operation - no runtime reconfiguration is supported.

Can CY7C1526KV18-333BZXC operate with only one clock (K) instead of dual K/K and C/C?

Yes - the device supports single-clock domain operation using only K for both input latching and output timing. In this mode, Q[8:0] data is driven on K's rising edge, and C/C pins are unused. However, echo clock (CQ/CQ) functionality and flight-time deskew capability are forfeited, limiting suitability for >200 MHz system-level timing closure.

What is the purpose of BWS0 and how does it differ from nibble write selects?

BWS0 (Byte Write Select 0) is an active-low control that enables or disables writing to the full D[8:0] data bus during a write transaction. Unlike nibble selects (NWS0/NWS1), which mask individual 4-bit segments, BWS0 gates the entire 9-bit word - asserting BWS0 LOW allows full 9-bit write, while HIGH ignores all D[8:0] bits, preserving memory contents.

Is the 165-ball FBGA package of CY7C1526KV18-333BZXC compatible with standard reflow profiles?

Yes - the Pb-free 165-ball FBGA package is qualified for IPC/JEDEC J-STD-020D moisture sensitivity level 3 and supports standard lead-free reflow profiles (peak temperature ≤260°C, 60–90 sec above 217°C). Board layout must observe 0.8 mm ball pitch routing rules and maintain ≥0.2 mm solder mask dams between adjacent balls to prevent bridging.