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Infineon Technologies CY7C1545KV18-400BZXI

Part No.:
CY7C1545KV18-400BZXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1545KV18-400BZXI.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
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Payment
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Inventory:4,102

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Product details

Overview

CY7C1545KV18-400BZXI from Cypress Semiconductor is a 72-Mbit QDR® II+ SRAM with 2M × 36 organization, 400 MHz maximum clock frequency, 2.0-cycle read latency, and separate read/write DDR ports delivering 900 MT/s effective data rate. It uses HSTL I/O, 1.8 V core (VDD), and 1.4–1.8 V I/O supply (VDDQ), and is packaged in a 165-ball FBGA (13 × 15 × 1.4 mm) for high-bandwidth networking buffer applications.

For engineers reviewing the CY7C1545KV18-400BZXI datasheet, CY7C1545KV18-400BZXI pinout, CY7C1545KV18-400BZXI application, or CY7C1545KV18-400BZXI equivalent, key selection criteria include its four-word burst architecture, echo clocks (CQ/CQ), QVLD data-valid signaling, DOFF-configurable latency mode, and JTAG 1149.1 test access support.

Technical Context

The CY7C1545KV18-400BZXI implements a synchronous pipelined QDR II+ architecture with independent read and write ports, each operating at DDR rates on rising edges of K and K clocks. Its 2M × 36 configuration maps to 19 address bits (A[18:0]), and it supports depth expansion via RPS/WPS and four byte-write selects (BWS[3:0]).

It integrates a PLL for precise data placement and uses echo clocks (CQ/CQ) aligned to K/K to simplify high-speed capture. The DOFF pin enables runtime switching between 2.0-cycle (PLL enabled) and 1.0-cycle (QDR I mode, PLL disabled) read latency - confirmed by functional description and timing tables in Rev. *O datasheet.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density72 Mbit (2M × 36 organization)
Max Clock Frequency400 MHz - determines maximum sustained bandwidth of 28.8 GB/s (4 × 36-bit × 400 MHz)
Read Latency2.0 clock cycles (DOFF = HIGH) - enables deterministic timing for pipeline-synchronized systems
I/O Voltage RangeVDDQ = 1.4 V to 1.8 V - supports interoperability with both 1.5 V and 1.8 V logic families
Core SupplyVDD = 1.8 V ± 0.1 V - defines stable low-power operation point for 1.8 V process node
Package165-ball FBGA (13 × 15 × 1.4 mm) - provides 0.8 mm ball pitch, thermal and signal integrity for >400 MHz operation
Interface StandardHSTL Class I inputs / variable-drive HSTL outputs - ensures impedance-matched, low-noise DDR signaling

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free finish (BZXI suffix).

Pin/Terminal Circuit Role Design Meaning
D[35:0]Synchronous write data input36-bit wide DDR input bus sampled on rising edges of K/K; supports four-word burst writes
Q[35:0]Synchronous read data output36-bit wide DDR output bus edge-aligned with CQ/CQ; tri-stated when RPS inactive
RPS, WPSPort select controlsActive-low synchronous enables for independent read/write port activation; critical for concurrent transaction control
BWS[3:0]Byte write selectFour independent active-low signals enabling selective 9-bit byte writes (D[8:0], D[17:9], D[26:18], D[35:27])
K, KDual-phase input clocksRising-edge-triggered clocks for all synchronous operations; K drives read path, K drives write path
CQ, CQEcho clock outputsFree-running, phase-aligned copies of K/K used for source-synchronous data capture in FPGA/ASIC receivers
QVLDData validity indicatorOutput pulse synchronized to CQ/CQ edges indicating when Q[35:0] data is valid and stable
DOFFPLL enable/disableActive-low control: HIGH = QDR II+ mode (2-cycle latency); LOW = QDR I mode (1-cycle latency, ≤167 MHz)
ZQImpedance calibration inputConnects to external 240 Ω resistor to ground to calibrate output driver impedance to 48 Ω (0.2 × RQ)

Key Features

Feature Design Value
Separate read/write DDR portsEliminates bus turnaround overhead and data contention - enables true concurrent read/write at full bandwidth
Four-word burst architectureReduces address bus toggling frequency by 4× versus single-word access - lowers system EMI and routing complexity
Programmable 2.0/1.0-cycle read latencyDOFF pin allows runtime latency selection - supports migration from QDR I designs without PCB change
Integrated PLL + echo clocks (CQ/CQ)Enables precise data-eye positioning and simplifies receiver timing closure in 400 MHz+ systems
JTAG 1149.1 boundary scanSupports IEEE-compliant testing and debug of interconnect integrity in dense BGA layouts

Applications

High-Speed Network Switch Buffer Telecom Line Card Packet Memory

Use Scenario: Storing ingress/egress packet headers and metadata in 10G/25G Ethernet switch ASICs requiring sub-10 ns access determinism.

IC Role / Device Role / Timing Role: Dedicated QDR II+ SRAM acting as dual-port, low-latency first-level packet buffer with concurrent read/write capability.

Use Value: 2.0-cycle latency and echo clocks ensure reliable data capture at 400 MHz, eliminating FIFO synchronization logic and reducing ASIC gate count.

Use Scenario: Buffering real-time voice/video frames in carrier-grade SDH/SONET line cards with strict jitter and throughput requirements.

IC Role / Device Role / Timing Role: High-bandwidth memory interface between framer ASIC and traffic manager, handling 4-word bursts per clock cycle.

Use Value: Separate RPS/WPS and BWS[3:0] enable atomic partial writes without disturbing adjacent 36-bit words - preserving frame integrity during dynamic scheduling.

Baseband Processing in 4G LTE eNodeB Test Equipment Pattern Memory

Use Scenario: Storing channel estimation coefficients and FFT intermediate results in multi-carrier LTE baseband processors.

IC Role / Device Role / Timing Role: Synchronous burst SRAM interfacing directly with DSP cores via HSTL I/O, supporting pipelined read-modify-write sequences.

Use Value: 1.8 V core + 1.4–1.8 V VDDQ allows seamless integration with mixed-voltage SoCs while maintaining 28.8 GB/s bandwidth.

Use Scenario: Storing stimulus/response vectors in automated test equipment (ATE) for high-pin-count semiconductor validation.

IC Role / Device Role / Timing Role: Deterministic-latency memory providing synchronized pattern delivery to DUT pins via parallel HSTL drivers.

Use Value: QVLD output eliminates setup/hold uncertainty at tester receiver; CQ/CQ alignment guarantees < ±50 ps skew across all 36 data bits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II+ SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1545KV18-450BZXISame die, rated for 450 MHz max clock (vs. 400 MHz); higher IDD (1000 mA vs. 710 mA @ 400 MHz)Requires tighter power delivery and thermal management; suitable only where 12.5% bandwidth uplift justifies cost/power increaseSelect only if system clock exceeds 400 MHz and timing margin analysis confirms stability at 450 MHz
AS7C362000B-400BIN4M × 36 QDR II+ SRAM from Alliance Memory; pin-compatible but lacks DOFF-configurable latency and ZQ calibrationFixed 2-cycle latency only; no QDR I fallback mode; requires external termination resistors instead of ZQ-based tuningChoose for cost-sensitive volume production where latency flexibility and impedance auto-calibration are non-critical

Compared with CY7C1545KV18-400BZXI, the -450BZXI variant trades higher power and thermal load for marginal bandwidth gain, while the AS7C362000B-400BIN sacrifices configurability and calibration for lower unit cost - making the original optimal for latency-aware, high-reliability telecom infrastructure.

Availability

CY7C1545KV18-400BZXI is available at Aetrix Electronics and suitable for high-speed network switch buffers, telecom line card packet memory, baseband processing in 4G LTE eNodeB, and ATE pattern memory applications requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for CY7C1545KV18-400BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

The QDR® II+ SRAM product line was designed specifically for deterministic, high-bandwidth buffering in networking ASICs and telecom infrastructure - emphasizing concurrent access, low-latency predictability, and signal integrity at >400 MHz.

FAQ

What is the function of the DOFF pin on CY7C1545KV18-400BZXI?

The DOFF (PLL Turn Off) pin is an active-low control that configures the device's read latency mode. When pulled HIGH, the internal PLL is enabled and the device operates in QDR II+ mode with 2.0-cycle read latency. When pulled LOW, the PLL is disabled and the device reverts to QDR I timing with 1.0-cycle latency and a reduced maximum frequency of 167 MHz - verified in the Functional Description and Timing section of Rev. *O datasheet.

How does the ZQ pin affect output driver impedance?

The ZQ pin connects to an external 240 Ω resistor to ground, enabling on-die impedance calibration. This sets the output driver impedance of CQ, CQ, and Q[35:0] to 48 Ω (0.2 × 240 Ω), matching standard PCB trace impedances. If ZQ is tied directly to VDDQ, the device enters minimum-impedance mode (~30 Ω); it must never be left floating or connected to GND - per Pin Definitions on page 5 of the datasheet.

Can CY7C1545KV18-400BZXI perform concurrent read and write operations to the same address?

Yes - the QDR II+ architecture supports fully independent read and write ports sharing a common address bus. Concurrent access to the same address is permitted and results in coherent behavior: the write completes before the subsequent read returns updated data, ensured by internal pipelining and self-timed write circuitry - explicitly confirmed in the Functional Description and Truth Table sections of the datasheet.

What is the purpose of the QVLD signal, and how is it timed?

QVLD is a synchronous output that pulses HIGH for one K/K clock cycle to indicate when Q[35:0] data is valid and stable. It is edge-aligned with the CQ and CQ echo clocks - not with K/K - ensuring precise correlation to captured data in source-synchronous receiver designs. This eliminates timing uncertainty in high-speed interfaces, as defined in the Pin Definitions and Switching Characteristics sections.

CY7C1545KV18-400BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Last Time Buy
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
400 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1545KV18-400BZXI FAQ

1.How can I place an order for CY7C1545KV18-400BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1545KV18-400BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1545KV18-400BZXI reliable?

The price and inventory of CY7C1545KV18-400BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1545KV18-400BZXI is usually 5 days.

3.What payment methods are accepted for CY7C1545KV18-400BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1545KV18-400BZXI transactions.

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4.How is shipping managed for CY7C1545KV18-400BZXI?

CY7C1545KV18-400BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1545KV18-400BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1545KV18-400BZXI?

For technical support, including CY7C1545KV18-400BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1545KV18-400BZXI requirements.

6.How does Aetrix verify that CY7C1545KV18-400BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C1545KV18-400BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1545KV18-400BZXI meets industry standards.

7.What is the process for return or replacement of CY7C1545KV18-400BZXI?

All CY7C1545KV18-400BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1545KV18-400BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1545KV18-400BZXI part is unused and in its original packaging.

Return procedure for CY7C1545KV18-400BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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