Infineon Technologies CY7C1545KV18-400BZXI
- Part No.:
- CY7C1545KV18-400BZXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1545KV18-400BZXI.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1545KV18-400BZXI from Cypress Semiconductor is a 72-Mbit QDR® II+ SRAM with 2M × 36 organization, 400 MHz maximum clock frequency, 2.0-cycle read latency, and separate read/write DDR ports delivering 900 MT/s effective data rate. It uses HSTL I/O, 1.8 V core (VDD), and 1.4–1.8 V I/O supply (VDDQ), and is packaged in a 165-ball FBGA (13 × 15 × 1.4 mm) for high-bandwidth networking buffer applications.
For engineers reviewing the CY7C1545KV18-400BZXI datasheet, CY7C1545KV18-400BZXI pinout, CY7C1545KV18-400BZXI application, or CY7C1545KV18-400BZXI equivalent, key selection criteria include its four-word burst architecture, echo clocks (CQ/CQ), QVLD data-valid signaling, DOFF-configurable latency mode, and JTAG 1149.1 test access support.
Technical Context
The CY7C1545KV18-400BZXI implements a synchronous pipelined QDR II+ architecture with independent read and write ports, each operating at DDR rates on rising edges of K and K clocks. Its 2M × 36 configuration maps to 19 address bits (A[18:0]), and it supports depth expansion via RPS/WPS and four byte-write selects (BWS[3:0]).
It integrates a PLL for precise data placement and uses echo clocks (CQ/CQ) aligned to K/K to simplify high-speed capture. The DOFF pin enables runtime switching between 2.0-cycle (PLL enabled) and 1.0-cycle (QDR I mode, PLL disabled) read latency - confirmed by functional description and timing tables in Rev. *O datasheet.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 organization) |
| Max Clock Frequency | 400 MHz - determines maximum sustained bandwidth of 28.8 GB/s (4 × 36-bit × 400 MHz) |
| Read Latency | 2.0 clock cycles (DOFF = HIGH) - enables deterministic timing for pipeline-synchronized systems |
| I/O Voltage Range | VDDQ = 1.4 V to 1.8 V - supports interoperability with both 1.5 V and 1.8 V logic families |
| Core Supply | VDD = 1.8 V ± 0.1 V - defines stable low-power operation point for 1.8 V process node |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - provides 0.8 mm ball pitch, thermal and signal integrity for >400 MHz operation |
| Interface Standard | HSTL Class I inputs / variable-drive HSTL outputs - ensures impedance-matched, low-noise DDR signaling |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free finish (BZXI suffix).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data input | 36-bit wide DDR input bus sampled on rising edges of K/K; supports four-word burst writes |
| Q[35:0] | Synchronous read data output | 36-bit wide DDR output bus edge-aligned with CQ/CQ; tri-stated when RPS inactive |
| RPS, WPS | Port select controls | Active-low synchronous enables for independent read/write port activation; critical for concurrent transaction control |
| BWS[3:0] | Byte write select | Four independent active-low signals enabling selective 9-bit byte writes (D[8:0], D[17:9], D[26:18], D[35:27]) |
| K, K | Dual-phase input clocks | Rising-edge-triggered clocks for all synchronous operations; K drives read path, K drives write path |
| CQ, CQ | Echo clock outputs | Free-running, phase-aligned copies of K/K used for source-synchronous data capture in FPGA/ASIC receivers |
| QVLD | Data validity indicator | Output pulse synchronized to CQ/CQ edges indicating when Q[35:0] data is valid and stable |
| DOFF | PLL enable/disable | Active-low control: HIGH = QDR II+ mode (2-cycle latency); LOW = QDR I mode (1-cycle latency, ≤167 MHz) |
| ZQ | Impedance calibration input | Connects to external 240 Ω resistor to ground to calibrate output driver impedance to 48 Ω (0.2 × RQ) |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write DDR ports | Eliminates bus turnaround overhead and data contention - enables true concurrent read/write at full bandwidth |
| Four-word burst architecture | Reduces address bus toggling frequency by 4× versus single-word access - lowers system EMI and routing complexity |
| Programmable 2.0/1.0-cycle read latency | DOFF pin allows runtime latency selection - supports migration from QDR I designs without PCB change |
| Integrated PLL + echo clocks (CQ/CQ) | Enables precise data-eye positioning and simplifies receiver timing closure in 400 MHz+ systems |
| JTAG 1149.1 boundary scan | Supports IEEE-compliant testing and debug of interconnect integrity in dense BGA layouts |
Applications
| High-Speed Network Switch Buffer | Telecom Line Card Packet Memory |
|---|---|
Use Scenario: Storing ingress/egress packet headers and metadata in 10G/25G Ethernet switch ASICs requiring sub-10 ns access determinism. IC Role / Device Role / Timing Role: Dedicated QDR II+ SRAM acting as dual-port, low-latency first-level packet buffer with concurrent read/write capability. Use Value: 2.0-cycle latency and echo clocks ensure reliable data capture at 400 MHz, eliminating FIFO synchronization logic and reducing ASIC gate count. |
Use Scenario: Buffering real-time voice/video frames in carrier-grade SDH/SONET line cards with strict jitter and throughput requirements. IC Role / Device Role / Timing Role: High-bandwidth memory interface between framer ASIC and traffic manager, handling 4-word bursts per clock cycle. Use Value: Separate RPS/WPS and BWS[3:0] enable atomic partial writes without disturbing adjacent 36-bit words - preserving frame integrity during dynamic scheduling. |
| Baseband Processing in 4G LTE eNodeB | Test Equipment Pattern Memory |
Use Scenario: Storing channel estimation coefficients and FFT intermediate results in multi-carrier LTE baseband processors. IC Role / Device Role / Timing Role: Synchronous burst SRAM interfacing directly with DSP cores via HSTL I/O, supporting pipelined read-modify-write sequences. Use Value: 1.8 V core + 1.4–1.8 V VDDQ allows seamless integration with mixed-voltage SoCs while maintaining 28.8 GB/s bandwidth. |
Use Scenario: Storing stimulus/response vectors in automated test equipment (ATE) for high-pin-count semiconductor validation. IC Role / Device Role / Timing Role: Deterministic-latency memory providing synchronized pattern delivery to DUT pins via parallel HSTL drivers. Use Value: QVLD output eliminates setup/hold uncertainty at tester receiver; CQ/CQ alignment guarantees < ±50 ps skew across all 36 data bits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II+ SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1545KV18-450BZXI | Same die, rated for 450 MHz max clock (vs. 400 MHz); higher IDD (1000 mA vs. 710 mA @ 400 MHz) | Requires tighter power delivery and thermal management; suitable only where 12.5% bandwidth uplift justifies cost/power increase | Select only if system clock exceeds 400 MHz and timing margin analysis confirms stability at 450 MHz |
| AS7C362000B-400BIN | 4M × 36 QDR II+ SRAM from Alliance Memory; pin-compatible but lacks DOFF-configurable latency and ZQ calibration | Fixed 2-cycle latency only; no QDR I fallback mode; requires external termination resistors instead of ZQ-based tuning | Choose for cost-sensitive volume production where latency flexibility and impedance auto-calibration are non-critical |
Compared with CY7C1545KV18-400BZXI, the -450BZXI variant trades higher power and thermal load for marginal bandwidth gain, while the AS7C362000B-400BIN sacrifices configurability and calibration for lower unit cost - making the original optimal for latency-aware, high-reliability telecom infrastructure.
Availability
CY7C1545KV18-400BZXI is available at Aetrix Electronics and suitable for high-speed network switch buffers, telecom line card packet memory, baseband processing in 4G LTE eNodeB, and ATE pattern memory applications requiring stable component supply, long-lifecycle support, and traceable sourcing.
Supply support for CY7C1545KV18-400BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
The QDR® II+ SRAM product line was designed specifically for deterministic, high-bandwidth buffering in networking ASICs and telecom infrastructure - emphasizing concurrent access, low-latency predictability, and signal integrity at >400 MHz.
FAQ
What is the function of the DOFF pin on CY7C1545KV18-400BZXI?
The DOFF (PLL Turn Off) pin is an active-low control that configures the device's read latency mode. When pulled HIGH, the internal PLL is enabled and the device operates in QDR II+ mode with 2.0-cycle read latency. When pulled LOW, the PLL is disabled and the device reverts to QDR I timing with 1.0-cycle latency and a reduced maximum frequency of 167 MHz - verified in the Functional Description and Timing section of Rev. *O datasheet.
How does the ZQ pin affect output driver impedance?
The ZQ pin connects to an external 240 Ω resistor to ground, enabling on-die impedance calibration. This sets the output driver impedance of CQ, CQ, and Q[35:0] to 48 Ω (0.2 × 240 Ω), matching standard PCB trace impedances. If ZQ is tied directly to VDDQ, the device enters minimum-impedance mode (~30 Ω); it must never be left floating or connected to GND - per Pin Definitions on page 5 of the datasheet.
Can CY7C1545KV18-400BZXI perform concurrent read and write operations to the same address?
Yes - the QDR II+ architecture supports fully independent read and write ports sharing a common address bus. Concurrent access to the same address is permitted and results in coherent behavior: the write completes before the subsequent read returns updated data, ensured by internal pipelining and self-timed write circuitry - explicitly confirmed in the Functional Description and Truth Table sections of the datasheet.
What is the purpose of the QVLD signal, and how is it timed?
QVLD is a synchronous output that pulses HIGH for one K/K clock cycle to indicate when Q[35:0] data is valid and stable. It is edge-aligned with the CQ and CQ echo clocks - not with K/K - ensuring precise correlation to captured data in source-synchronous receiver designs. This eliminates timing uncertainty in high-speed interfaces, as defined in the Pin Definitions and Switching Characteristics sections.
CY7C1545KV18-400BZXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Last Time Buy
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1545KV18-400BZXI FAQ
1.How can I place an order for CY7C1545KV18-400BZXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1545KV18-400BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1545KV18-400BZXI reliable?
The price and inventory of CY7C1545KV18-400BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1545KV18-400BZXI is usually 5 days.
3.What payment methods are accepted for CY7C1545KV18-400BZXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1545KV18-400BZXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1545KV18-400BZXI?
CY7C1545KV18-400BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1545KV18-400BZXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1545KV18-400BZXI?
For technical support, including CY7C1545KV18-400BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1545KV18-400BZXI requirements.
6.How does Aetrix verify that CY7C1545KV18-400BZXI is sourced from the original manufacturer or authorized distributors?
All CY7C1545KV18-400BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1545KV18-400BZXI meets industry standards.
7.What is the process for return or replacement of CY7C1545KV18-400BZXI?
All CY7C1545KV18-400BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1545KV18-400BZXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1545KV18-400BZXI part is unused and in its original packaging.
Return procedure for CY7C1545KV18-400BZXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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