Infineon Technologies CY7C1545KV18-450BZC
- Part No.:
- CY7C1545KV18-450BZC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1545KV18-450BZC.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1545KV18 from Cypress Semiconductor is a 2M × 36-bit, 72-Mbit QDR® II+ SRAM with synchronous pipelined architecture, dual independent read/write ports, 450 MHz clock operation (900 Mbps DDR data rate), 2.0-cycle read latency when DOFF = HIGH, and HSTL I/O interface. It serves as high-bandwidth buffer memory in network packet processors requiring concurrent access to ingress/egress data paths.
For engineers reviewing the CY7C1545KV18 datasheet, CY7C1545KV18 pinout, CY7C1545KV18 application, or CY7C1545KV18 equivalent, key selection criteria include burst depth (4-word), x36 bus width, 1.8V core / 1.4–1.8V I/O supply compatibility, FBGA-165 package footprint, and QDR II+ timing compliance for deterministic low-latency memory access in telecom line cards.
Technical Context
This device implements a true dual-port architecture with physically separate read and write data paths-no bus turnaround required-enabling simultaneous read and write operations on the same clock cycle. Its 4-word burst transfers 144 bits per access (36-bit × 4), synchronized to both K and K clocks with echo clocks CQ/CQ for precise DDR capture.
The internal PLL enables accurate data placement at 450 MHz; when disabled via DOFF = LOW, it reverts to QDR I mode (1-cycle latency, ≤167 MHz). Address inputs are multiplexed and latched on alternating K edges, supporting 19-bit addressing for the 2M-depth array.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36-bit organization) |
| Max Clock Frequency | 450 MHz - enables 900 MT/s effective data rate on DDR interfaces |
| Read Latency | 2.0 clock cycles - deterministic timing for pipeline-synchronized systems |
| Core Supply | VDD = 1.8 V ± 0.1 V - defines logic threshold and power consumption baseline |
| I/O Supply Range | VDDQ = 1.4 V to 1.8 V - supports interoperability with 1.5V or 1.8V system buses |
| Interface Standard | HSTL Class I inputs / variable-drive HSTL outputs - ensures signal integrity at >400 MHz |
| Burst Length | 4-word - reduces address bus toggling frequency by 75% vs. single-word access |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data input | 36-bit parallel input sampled on rising edges of K/K; supports full-width burst writes |
| Q[35:0] | Synchronous read data output | 36-bit parallel output aligned to CQ/CQ; tri-stated when RPS deasserted |
| A[18:0] | Multiplexed address input | 19-bit address bus shared by read/write ports; latched on K rising edge |
| RPS | Read port select (active LOW) | Enables read burst; output drivers tri-state within one K cycle after deassertion |
| WPS | Write port select (active LOW) | Initiates write burst; D[35:0] ignored when deasserted |
| BWS[3:0] | Byte write select (active LOW) | Independent control of four 9-bit byte lanes; enables partial-word updates without read-modify-write |
| K / K | Dual-phase input clocks | Rising edges drive all synchronous registers; K used for address/RPS/WPS, K for D/Q timing |
| CQ / CQ | Output echo clocks | Free-running, phase-aligned copies of K/K; simplify source-synchronous data capture at receiver |
| QVLD | Data validity indicator | Asserted coincident with valid Q[35:0]; edge-aligned to CQ/CQ for setup/hold margining |
| DOFF | PLL disable control | LOW disables PLL → QDR I mode (1-cycle latency, ≤167 MHz); HIGH enables QDR II+ mode |
| ZQ | Impedance calibration reference | Connects to external 240 Ω resistor to GND to calibrate CQ/Q[35:0] output impedance to 48 Ω |
| VREF | HSTL reference voltage | Static bias point for HSTL input thresholds and AC measurement; typically tied to VDDQ/2 |
Key Features
| Feature | Design Value |
|---|---|
| Independent dual-port architecture | Eliminates data bus turnaround overhead and contention risk in full-duplex traffic buffers |
| 4-word burst with DDR I/O | Delivers 144 bits per 2-clock cycle - doubles effective bandwidth versus single-data-rate SRAM |
| Programmable latency mode | DOFF pin selects between QDR II+ (2-cycle, 450 MHz) or QDR I (1-cycle, ≤167 MHz) operation |
| HSTL I/O with ZQ calibration | Ensures <±5% output impedance matching across voltage/temperature for clean 900 Mbps signaling |
| JTAG 1149.1 test access | Enables boundary-scan verification of FBGA solder joints and interconnect integrity |
Applications
| Network Packet Buffer | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing incoming/outgoing Ethernet frames in a 10Gbps switch ASIC with separate ingress/egress pipelines. IC Role / Device Role / Timing Role: Dual-port SRAM acting as a non-blocking first-level packet buffer, accepting writes from ingress parser while simultaneously servicing reads for egress scheduler. Use Value: 2M × 36-bit width matches typical 128-bit internal bus granularity; 450 MHz clock sustains ≥6.48 GB/s aggregate bandwidth (R+W) required for line-rate forwarding. |
Use Scenario: Frame buffering in a 40G OTN framer where payload data must be time-aligned across multiple channels before multiplexing. IC Role / Device Role / Timing Role: Synchronous burst memory providing deterministic 2-cycle read latency for jitter-tolerant alignment logic. Use Value: QVLD and echo clocks (CQ/CQ) enable reliable source-synchronous capture at 900 Mbps, reducing timing closure effort in FPGA-based framer designs. |
| Baseband Processor Cache | High-Speed Test Equipment Memory |
|
Use Scenario: Temporary storage of FFT coefficients and channel estimation results in LTE-Advanced baseband processing units. IC Role / Device Role / Timing Role: Low-latency, pipelined SRAM interfacing directly to multi-core DSP fabric with separate read/write AXI streams. Use Value: BWS[3:0] allows selective update of 9-bit subwords during coefficient correction - avoids full 36-bit read-modify-write cycles and preserves real-time throughput. |
Use Scenario: Pattern memory in automated test equipment generating high-speed digital vectors for SoC validation. IC Role / Device Role / Timing Role: Burst-access memory feeding parallel 36-bit stimulus buses synchronized to 450 MHz pattern clock. Use Value: 165-ball FBGA footprint provides dense, thermally efficient layout; VDDQ range (1.4–1.8 V) accommodates legacy 1.5V tester I/O standards without level shifters. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T36150 | 36-bit, 2M × 36, 400 MHz max, LVDS I/O, no DOFF mode switching | Requires differential signaling infrastructure; lacks QDR II+/I mode flexibility | Select when system uses LVDS PHY and fixed 1-cycle latency suffices |
| ISSI IS61WV204836B | 36-bit, 2M × 36, 167 MHz async SRAM, CMOS I/O, no burst or DDR | No pipelining or burst; 10× lower bandwidth; simpler timing but higher latency variability | Select only for cost-sensitive, non-real-time buffering where 450 MHz timing is unnecessary |
Compared with IDT72T36150 and IS61WV204836B, CY7C1545KV18 uniquely delivers 450 MHz QDR II+ performance with programmable latency and HSTL compatibility-making it optimal for next-gen packet processing where deterministic bandwidth and flexible timing modes are critical.
Availability
CY7C1545KV18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card design, baseband processor cache, and high-speed test equipment requiring stable component supply and long-term industrial availability.
Supply support for CY7C1545KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems, with emphasis on signal integrity and timing precision.
CY7C1545KV18 belongs to Cypress's QDR® II+ SRAM product line, engineered specifically for deterministic, low-latency, concurrent-read-write memory subsystems in high-speed communications infrastructure.
FAQ
What is the function of the DOFF pin on CY7C1545KV18?
The DOFF (PLL Turn Off) pin controls operational mode: when pulled HIGH, the internal PLL is active and the device operates in QDR II+ mode with 2.0-cycle read latency at up to 450 MHz; when pulled LOW, the PLL is disabled and the device reverts to QDR I timing with 1-cycle latency and maximum frequency reduced to 167 MHz. This pin must not be left floating and is typically pulled up via ≤10 kΩ resistor for normal operation.
How does the ZQ pin affect signal integrity in high-speed designs?
The ZQ pin connects to an external 240 Ω resistor to ground to calibrate the output driver impedance of CQ, CQ, and Q[35:0] pins to approximately 48 Ω (0.2 × RQ). This calibration compensates for process, voltage, and temperature variations, ensuring consistent HSTL signal rise/fall times and minimizing reflections on 50 Ω PCB traces-critical for reliable 900 Mbps DDR signaling.
Can CY7C1545KV18 support partial writes without read-modify-write cycles?
Yes. The device provides four independent Byte Write Select signals (BWS[3:0]), each controlling a 9-bit lane of the 36-bit data bus. When a BWS signal is deasserted (HIGH), the corresponding 9-bit segment remains unaltered during a write operation. This enables true partial-word updates-such as modifying only header fields in a packet buffer-without requiring a prior read cycle or external logic.
What is the significance of the CQ and CQ echo clocks?
CQ and CQ are free-running, phase-aligned echo copies of the K and K input clocks, respectively. They are sourced from the same internal PLL path as the data outputs and provide a local timing reference at the receiver. This eliminates skew between clock and data paths, simplifies PCB layout, and enables robust source-synchronous capture of Q[35:0] at 900 Mbps-especially valuable in FPGA- or ASIC-based systems where clock recovery margins are tight.
CY7C1545KV18-450BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 450 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1545KV18-450BZC FAQ
1.How can I place an order for CY7C1545KV18-450BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1545KV18-450BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1545KV18-450BZC reliable?
The price and inventory of CY7C1545KV18-450BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1545KV18-450BZC is usually 5 days.
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Once your CY7C1545KV18-450BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1545KV18-450BZC?
For technical support, including CY7C1545KV18-450BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1545KV18-450BZC requirements.
6.How does Aetrix verify that CY7C1545KV18-450BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1545KV18-450BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1545KV18-450BZC meets industry standards.
7.What is the process for return or replacement of CY7C1545KV18-450BZC?
All CY7C1545KV18-450BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1545KV18-450BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1545KV18-450BZC part is unused and in its original packaging.
Return procedure for CY7C1545KV18-450BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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