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Infineon Technologies CY7C1550KV18-400BZXC

Part No.:
CY7C1550KV18-400BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1550KV18-400BZXC.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
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Payment
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Inventory:635

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Product details

Overview

CY7C1550KV18 from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous pipelined DDR II+ SRAM with 2.0-cycle read latency, 400 MHz clock operation, HSTL I/O interface, and integrated PLL for precise data placement. It delivers 900 Mbps double-data-rate throughput, uses echo clocks (CQ/CQ) for simplified high-speed data capture, and supports configurable I/O voltage (1.4 V to 1.8 V). It is deployed in network packet buffers and high-speed test equipment where deterministic burst timing and low-latency memory access are critical.

For engineers reviewing the CY7C1550KV18 datasheet, CY7C1550KV18 pinout, CY7C1550KV18 application, or CY7C1550KV18 equivalent, this page provides verified technical context, validated pin functions, confirmed DDR II+ timing behavior, real-world use cases, and traceable alternative options - all grounded in Cypress' official documentation (Doc #001-15879 Rev. *R).

Technical Context

The CY7C1550KV18 implements a synchronous pipelined architecture with dual input clocks (K/K) and echo clocks (CQ/CQ), enabling precise DDR timing alignment. Its internal organization is two 1M × 36 arrays, supporting 2-word bursts per access, with address latching on alternate rising edges of K.

All synchronous inputs (A, R/W, LD, BWS[3:0]) are registered on the rising edge of K; write data is sampled on both K and K edges; read data is driven on both K and K edges with QVLD edge-aligned to CQ/CQ. The PLL ensures accurate data placement when DOFF = HIGH, while DOFF = LOW disables the PLL and reverts to DDR I mode (1-cycle latency, ≤167 MHz).

Key Specifications

Parameter Value and Actual Design Meaning
Density & Organization 72 Mbit / 2M × 36 - supports wide-bus systems requiring 36-bit parallel data paths without external multiplexing.
Max Clock Frequency 400 MHz - enables 800 MT/s effective bandwidth with DDR interface; validated at industrial temperature range.
Read Latency 2.0 clock cycles (DOFF = HIGH) - guarantees deterministic timing for pipeline-synchronized logic in FPGA/ASIC interfaces.
I/O Voltage Range VDDQ = 1.4 V to 1.8 V - allows interoperability with 1.5 V and 1.8 V HSTL-compatible controllers without level shifters.
Output Drive Variable-drive HSTL outputs - impedance programmable via ZQ pin (0.2 × RQ) to match PCB trace impedance and minimize signal reflections.
Valid Data Indicator QVLD output - edge-aligned with CQ/CQ, eliminates need for external strobe generation in high-speed capture logic.
Package 165-ball FBGA (13 × 15 × 1.4 mm) - fine-pitch package optimized for high-density routing and thermal dissipation in telecom modules.

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm, RoHS-compliant, with 0.8 mm ball pitch.

Pin/Terminal Circuit Role Design Meaning
DQ[35:0] Synchronous bidirectional data bus 36-bit DDR data path; inputs sampled on K/K rising edges; outputs driven on K/K rising edges with QVLD synchronization.
K / K Differential clock inputs Rising edges control all synchronous operations; K used for address/control registration; both used for data sampling/driving.
CQ / CQ Output echo clocks Free-running, K-synchronized clocks aligned to data edges; eliminate system-level skew compensation in multi-SRAM designs.
QVLD Valid data indicator Asserted coincident with first valid data word; edge-aligned to CQ/CQ - enables direct connection to FPGA capture registers.
DOFF PLL disable control Active-Low; when grounded, disables PLL and forces DDR I mode (1-cycle latency, max 167 MHz); tied HIGH for full DDR II+ operation.
ZQ Impedance calibration reference Connects to external resistor to ground (RQ); sets output driver impedance to 0.2 × RQ - critical for signal integrity at 400 MHz.
BWS[3:0] Byte write select Four active-low signals controlling 9-bit byte lanes (D[8:0], D[17:9], D[26:18], D[35:27]); enables partial writes without read-modify-write overhead.

Key Features

Feature Design Value
Two-word burst architecture Reduces address bus toggling by 50% versus single-word SRAMs - lowers EMI and simplifies controller address sequencing.
Integrated PLL with echo clocks Eliminates external delay-locked loops (DLLs); CQ/CQ provide deterministic, skew-compensated strobes for reliable >800 MT/s capture.
Programmable output impedance (ZQ) Enables on-die termination matching to PCB trace impedance - reduces stub reflections and improves eye diagram margin at 400 MHz.
Synchronous self-timed writes Removes external write-enable timing constraints; internal timing engine handles setup/hold automatically - simplifies FPGA interface logic.
Configurable latency mode (DOFF) Hardware-selectable DDR II+ (2-cycle) or DDR I (1-cycle) operation - supports legacy controller compatibility and performance scaling.

Applications

Network Packet Buffering High-Speed Test Equipment

Use Scenario: Storing and forwarding variable-length Ethernet frames in Layer 2 switches with line-rate throughput.

IC Role / Device Role / Timing Role: Burst-accessed SRAM buffer providing 36-bit-wide, low-latency storage for ingress/egress queues with deterministic 2-cycle read response.

Use Value: Eliminates wait states between frame segments using 2-word burst reads; QVLD and CQ enable clean capture into FPGA-based traffic managers.

Use Scenario: Capturing high-fidelity analog waveform samples at 400+ MS/s in automated test systems.

IC Role / Device Role / Timing Role: High-bandwidth memory buffer interfacing directly to ADC output and FPGA processing logic with precise DDR timing.

Use Value: 900 Mbps DDR throughput sustains sustained capture rates; ZQ-calibrated outputs maintain signal integrity across 16+ inch backplane traces.

FPGA-Based Protocol Analyzers Telecom Line Card Buffers

Use Scenario: Real-time analysis of PCIe or SATA protocol traffic with deep packet history retention.

IC Role / Device Role / Timing Role: Synchronous SRAM acting as trace memory, loaded via FPGA's DDR-capable I/O banks with minimal glue logic.

Use Value: BWS[3:0] enables selective update of protocol header fields without full-word overwrites; DOFF pin allows fallback to DDR I for debug mode timing margins.

Use Scenario: Buffering TDM voice channels and control signaling in carrier-grade DSLAM line cards.

IC Role / Device Role / Timing Role: Low-power, high-reliability memory for time-critical buffering with neutron soft error immunity (documented in spec).

Use Value: 1.8 V core + 1.5 V I/O reduces power vs. 3.3 V SRAMs; FBGA package supports conformal coating and extended thermal cycling in NEBS environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3652 36-bit QDR-II SRAM, 350 MHz max, no integrated PLL, requires external DLL; 165-ball FBGA but different pinout. Lacks echo clocks and QVLD; demands more complex board-level timing compensation and FPGA logic for data capture. Choose when existing design uses IDT QDR-II ecosystem and timing budget allows external DLL integration.
ISSI IS61WV102436B 1024K × 36 asynchronous SRAM, 15 ns access, no DDR interface, no burst mode, 100-pin TQFP package. Cannot support >200 MT/s throughput; lacks clock-domain crossing features needed for high-speed serial interface buffering. Choose only for cost-sensitive, low-bandwidth control-plane buffers where deterministic latency is less critical than BOM simplicity.

Compared with IDT72T3652 and IS61WV102436B, CY7C1550KV18 uniquely integrates PLL, echo clocks, and QVLD to reduce FPGA resource usage and PCB routing complexity - delivering higher effective bandwidth with lower system-level timing risk.

Availability

CY7C1550KV18 is available at Aetrix Electronics and suitable for network packet buffering, high-speed test equipment, FPGA-based protocol analyzers, and telecom line card buffers requiring stable component supply, long-lifecycle support, and guaranteed traceable sourcing.

Supply support for CY7C1550KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1550KV18 belongs to Cypress' QDR II+ SRAM product line, engineered specifically for high-bandwidth, low-latency buffering in packet-switched networks and instrumentation systems demanding deterministic DDR timing and robust signal integrity.

FAQ

What is the function of the DOFF pin, and how does it affect timing?

The DOFF pin is an active-Low PLL disable control. When asserted LOW, it disables the internal PLL and forces the device into DDR I mode with 1-cycle read latency and a maximum frequency of 167 MHz. When held HIGH (via 10 kΩ pull-up), the PLL is enabled, supporting 400 MHz operation with 2.0-cycle latency and precise data placement via echo clocks. This hardware-selectable mode enables backward compatibility and debug flexibility without firmware changes.

How does the ZQ pin calibrate output impedance, and what resistor value is required?

The ZQ pin connects to an external resistor (RQ) tied to ground; the device measures RQ and configures its output drivers to 0.2 × RQ. For standard 50 Ω trace impedance, a 240 Ω resistor yields 48 Ω driver impedance. Cypress specifies RQ tolerance ≤±1%, and the pin must never be left floating or tied to GND - connecting directly to VDDQ enables minimum-impedance mode instead of calibration.

Can CY7C1550KV18 be used in depth-expanded memory configurations?

Yes - the device supports seamless depth expansion via automatic tri-state control. When a read access is deselected, the SRAM completes pending transactions and tri-states DQ[35:0] on the next rising edge of K, eliminating bus contention. This behavior, combined with QVLD and echo clocks, allows multiple CY7C1550KV18 devices to share a common data bus without external bus transceivers or wait-state insertion.

What is the role of BWS[3:0], and how are they mapped to data bits?

BWS[3:0] are active-Low byte write select signals that enable partial writes to 9-bit subwords. In CY7C1550KV18: BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18], and BWS3 controls D[35:27]. All four are sampled synchronously on K/K rising edges during write cycles, allowing any combination of 9-bit lanes to be updated independently - avoiding destructive full-word writes in control register or descriptor table updates.

CY7C1550KV18-400BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II+
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
400 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1550KV18-400BZXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1550KV18-400BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of CY7C1550KV18-400BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1550KV18-400BZXC is usually 5 days.

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CY7C1550KV18-400BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1550KV18-400BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1550KV18-400BZXC?

For technical support, including CY7C1550KV18-400BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1550KV18-400BZXC requirements.

6.How does Aetrix verify that CY7C1550KV18-400BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1550KV18-400BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1550KV18-400BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1550KV18-400BZXC?

All CY7C1550KV18-400BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1550KV18-400BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1550KV18-400BZXC part is unused and in its original packaging.

Return procedure for CY7C1550KV18-400BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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