Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY7C1550KV18-450BZXI

Part No.:
CY7C1550KV18-450BZXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1550KV18-450BZXI.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,984

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C1550KV18-450BZXI from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous pipelined DDR II+ SRAM with 450 MHz clock frequency, 2.0-cycle read latency, and dual-edge DDR data transfer at 900 Mbps. It features echo clocks (CQ/CQ), QVLD data-valid indicator, and programmable impedance matching via ZQ pin. Used in high-bandwidth networking line cards and packet buffering systems requiring deterministic low-latency burst access.

For engineers reviewing the CY7C1550KV18-450BZXI datasheet, CY7C1550KV18-450BZXI pinout, CY7C1550KV18-450BZXI application, or CY7C1550KV18-450BZXI equivalent, key selection criteria include DDR II+ timing compliance, 2M × 36 depth/width configuration, 1.8 V core / 1.4–1.8 V I/O supply support, and FBGA-165 package compatibility with high-speed PCB layout constraints.

Technical Context

The device implements a two-word burst architecture synchronized to complementary K/K clocks, where address latching occurs on alternating rising edges and data is registered on both edges. Internal PLL enables precise data placement for 2.0-cycle latency mode when DOFF is HIGH; disabling the PLL via DOFF LOW reverts operation to DDR I mode with 1-cycle latency up to 167 MHz.

All synchronous inputs (A, R/W, LD, BWS[3:0]) are registered on K's rising edge; write data is sampled on both K and K edges; read data is driven on both edges with tight alignment to echo clocks CQ/CQ. QVLD provides edge-aligned indication of valid output data, eliminating need for external strobes in high-speed capture.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (2M × 36 organization), enabling compact high-throughput buffer designs without depth expansion.
Max Clock Frequency 450 MHz - supports 900 Mbps DDR data rate, meeting bandwidth requirements for 10G Ethernet and PCIe Gen2 packet buffers.
Read Latency 2.0 clock cycles (DOFF = HIGH) - guarantees deterministic timing for real-time traffic shaping and scheduling logic.
Core Supply VDD = 1.8 V ± 0.1 V - compatible with standard 1.8 V FPGA/ASIC core rails and simplifies power delivery design.
I/O Supply Range VDDQ = 1.4 V to 1.8 V - supports interoperability with both 1.5 V and 1.8 V HSTL-18/15 interfaces.
Package 165-ball FBGA (13 × 15 × 1.4 mm) - optimized for high-density routing and thermal dissipation in telecom modules.
Interface Standard HSTL Class I inputs / variable-drive HSTL outputs - ensures signal integrity at 450 MHz with controlled slew and termination.

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, Pb-free option available.

Pin/Terminal Circuit Role Design Meaning
DQ[35:0] Synchronous bidirectional data bus 36-bit wide DDR interface; drives valid data on both K and K rising edges; tri-states automatically on deselect.
K / K Complementary input clocks K captures address/control on rising edge; both K and K register write data and drive read data - essential for DDR timing closure.
CQ / CQ Output echo clocks Free-running, edge-aligned copies of K/K used by system logic to capture DQ data without skew compensation.
QVLD Data validity indicator Asserted synchronously with CQ/CQ rising edges to signal when DQ[35:0] contains valid burst data - replaces external strobe generation.
DOFF PLL disable control Active-low pin: HIGH enables DDR II+ mode (2-cycle latency @ 450 MHz); LOW disables PLL for DDR I fallback (1-cycle @ ≤167 MHz).
ZQ Impedance calibration reference Connects to external resistor to ground to tune DQ/CQ output impedance to 0.2 × RQ - critical for signal integrity on long traces.
BWS[3:0] Byte write select Four active-low signals controlling 9-bit byte lanes (D[8:0], D[17:9], D[26:18], D[35:27]); enables partial writes without read-modify-write overhead.

Key Features

Feature Design Value
Two-word burst architecture Reduces address bus toggling by 50% versus single-word SRAMs - lowers EMI and simplifies controller address sequencing.
Integrated PLL with DOFF control Enables seamless migration between DDR II+ (high-performance) and DDR I (legacy-compatible) modes via single pin strap.
Edge-aligned QVLD and echo clocks Eliminates need for system-level delay tuning or phase alignment circuits - accelerates timing closure in FPGA-based designs.
HSTL-18/15 compatible I/O Supports mixed-voltage backplanes and interoperability with Xilinx Virtex-6/Kintex-7 and Intel Stratix IV/V FPGAs without level shifters.
JTAG 1149.1 boundary scan Enables production testability and in-system debug of memory interconnects without additional probe points or fixtures.

Applications

Network Packet Buffering Telecom Line Card Cache

Use Scenario: Storing and forwarding variable-length IP packets in 10Gbps line cards with strict latency budgets.

IC Role / Device Role / Timing Role: High-speed burst-access SRAM acting as first-level packet buffer between SERDES and traffic manager ASIC.

Use Value: 2.0-cycle deterministic latency and echo-clock–driven capture enable sub-10ns jitter tolerance in time-sensitive forwarding paths.

Use Scenario: Buffering ATM cells and MPLS labels in carrier-grade optical transport equipment.

IC Role / Device Role / Timing Role: Synchronous DDR II+ SRAM providing dual-port-like throughput via burst reads/writes aligned to line-rate clocks.

Use Value: 450 MHz clock + 900 Mbps DDR bandwidth meets OC-192/STM-64 payload buffering requirements without interleaving.

FPGA-Based Protocol Accelerator High-Speed Test Equipment Memory

Use Scenario: Offloading TCP/IP checksum, encryption, or deep packet inspection in reconfigurable compute platforms.

IC Role / Device Role / Timing Role: External burst-access memory tightly coupled to FPGA fabric via dedicated HSTL interface and echo clocks.

Use Value: QVLD-synchronized data validity eliminates setup/hold uncertainty, allowing maximum FPGA clock utilization at 450 MHz.

Use Scenario: Capturing high-fidelity waveform samples in automated test equipment with >1 Gsample/s aggregate rate.

IC Role / Device Role / Timing Role: Low-latency, deterministic-depth memory for real-time pattern generation and response analysis.

Use Value: Programmable ZQ impedance matching ensures signal fidelity across temperature/voltage corners - critical for <±1% measurement accuracy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3652L10BG 36-Mbit (1M × 36), 333 MHz max, LVDS interface, no echo clocks or QVLD Limited to lower bandwidth; requires external strobe generation and differential termination Select only if system uses LVDS PHY and bandwidth ≤ 666 Mbps is sufficient
ISSI IS61WV102436BLL-15BLI 36-Mbit (1M × 36), 150 MHz async SRAM, parallel interface, no DDR or burst capability No DDR timing, no echo clocks, higher latency, incompatible with high-speed burst protocols Only suitable for cost-sensitive, non-real-time control-plane buffering where speed is secondary

Compared with IDT72T3652L10BG and IS61WV102436BLL-15BLI, CY7C1550KV18-450BZXI delivers double the density and 2.7× higher effective bandwidth with built-in timing aids (QVLD, CQ/CQ), reducing FPGA logic overhead and PCB routing complexity in 10G+ systems.

Availability

CY7C1550KV18-450BZXI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card cache, FPGA-based protocol acceleration, and high-speed test equipment requiring stable component supply and long-term industrial availability.

Supply support for CY7C1550KV18-450BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1550KV18 belongs to Cypress's QDR II+/DDR II+ SRAM product line, engineered specifically for deterministic, low-jitter, high-bandwidth buffering in packet-switched infrastructure where timing predictability outweighs cost-per-bit optimization.

FAQ

What is the function of the DOFF pin, and how does it affect timing?

The DOFF pin is an active-low PLL disable control. When asserted HIGH, the internal PLL enables DDR II+ mode with 2.0-cycle read latency at up to 450 MHz. When pulled LOW, the PLL is disabled and the device operates in DDR I mode with 1-cycle latency but limited to ≤167 MHz. This allows hardware-selectable performance vs. compatibility trade-offs without firmware changes.

How do CQ and CQ echo clocks simplify system timing?

CQ and CQ are free-running output clocks synchronized to K and K, respectively, and edge-aligned with DQ data transitions. They eliminate the need for system-level delay tuning or phase-locked capture logic, allowing receivers (e.g., FPGA input registers) to sample DQ using CQ/CQ as local clocks - reducing timing margin uncertainty to ≤0.45 ns.

Can CY7C1550KV18-450BZXI operate with VDDQ = 1.5 V while VDD = 1.8 V?

Yes. The device supports independent VDDQ from 1.4 V to VDD (1.8 V), so 1.5 V VDDQ is fully compliant. This enables direct interfacing with 1.5 V HSTL-15 FPGA I/O banks while maintaining 1.8 V core logic stability, avoiding level shifters and associated signal integrity penalties.

What is the role of the ZQ pin, and how must it be connected?

ZQ is an impedance calibration reference input. It must be connected to a precision resistor (RQ) tied to ground; output drivers (DQ, CQ, CQ) then self-tune to 0.2 × RQ. Alternatively, ZQ may be tied directly to VDDQ to enable minimum-impedance mode. It must never be left floating or connected to GND - doing so disables calibration and degrades signal integrity.

CY7C1550KV18-450BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II+
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
450 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1550KV18-450BZXI FAQ

1.How can I place an order for CY7C1550KV18-450BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1550KV18-450BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1550KV18-450BZXI reliable?

The price and inventory of CY7C1550KV18-450BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1550KV18-450BZXI is usually 5 days.

3.What payment methods are accepted for CY7C1550KV18-450BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1550KV18-450BZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1550KV18-450BZXI?

CY7C1550KV18-450BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1550KV18-450BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1550KV18-450BZXI?

For technical support, including CY7C1550KV18-450BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1550KV18-450BZXI requirements.

6.How does Aetrix verify that CY7C1550KV18-450BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C1550KV18-450BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1550KV18-450BZXI meets industry standards.

7.What is the process for return or replacement of CY7C1550KV18-450BZXI?

All CY7C1550KV18-450BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1550KV18-450BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1550KV18-450BZXI part is unused and in its original packaging.

Return procedure for CY7C1550KV18-450BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1550KV18-450BZXI Tags

  • CY7C1550KV18-450BZXI
  • CY7C1550KV18-450BZXI PDF
  • CY7C1550KV18-450BZXI Datasheet
  • CY7C1550KV18-450BZXI Specifications
  • CY7C1550KV18-450BZXI Images
  • Infineon Technologies
  • Infineon Technologies CY7C1550KV18-450BZXI
  • Buy CY7C1550KV18-450BZXI
  • CY7C1550KV18-450BZXI Price
  • CY7C1550KV18-450BZXI Distributor
  • CY7C1550KV18-450BZXI Supplier
  • CY7C1550KV18-450BZXI Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER