Infineon Technologies CY7C1550V18-375BZC
- Part No.:
- CY7C1550V18-375BZC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1550V18-375BZC.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:4,647
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Product details
Overview
CY7C1550V18 from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous pipelined DDR-II+ SRAM with 2-word burst architecture, 2.0-cycle read latency, and 375 MHz clock operation. It delivers 750 Mbps data transfer via double-data-rate interface, uses HSTL I/O with VDDQ = 1.4V–1.8V, and integrates echo clocks (CQ/CQ) and QVLD for precise high-speed data capture in networking and packet buffering applications.
For engineers reviewing the CY7C1550V18 datasheet, CY7C1550V18 pinout, CY7C1550V18 application, or CY7C1550V18 equivalent, key selection criteria include 36-bit wide I/O bus support, DLL-enabled timing alignment at 375 MHz, synchronous self-timed writes, JTAG 1149.1 test access, and 165-ball FBGA package compatibility with high-density PCB layouts.
Technical Context
The CY7C1550V18 implements a dual-clock DDR-II+ architecture where K and K control all synchronous inputs/outputs on rising edges. Its internal organization comprises two 1M × 36 memory arrays, enabling 2-word burst reads/writes per address cycle with deterministic 2.0-cycle latency.
It features a Delay Lock Loop (DLL) for sub-cycle data placement accuracy, echo clocks CQ/CQ aligned to output data edges, and QVLD synchronized to CQ/CQ transitions - eliminating external strobe routing complexity in multi-SRAM systems. Byte write select signals BWS[3:0] provide granular 9-bit byte-level write control across the 36-bit data bus.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36), supporting 36-bit parallel data path for high-throughput packet buffers |
| Max Clock Frequency | 375 MHz - enables 750 MT/s effective bandwidth with DDR interface |
| Read Latency | 2.0 clock cycles - fixed, deterministic delay from LD assertion to first valid Q word |
| VDD / VDDQ | Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to 1.8 V - supports low-voltage HSTL-18 signaling |
| Burst Length | 2-word burst - reduces address bus toggling frequency by 50% vs. single-word access |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm) - optimized for thermal dissipation and signal integrity in dense router line cards |
| JTAG Support | IEEE 1149.1 compliant TAP - enables boundary-scan testing without additional test fixtures |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, Pb-free and RoHS-compliant options available.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[35:0] | Synchronous bidirectional data bus | 36-bit DDR data path; latched on both K and K rising edges; tri-stated automatically after read deselect |
| BWS[3:0] | Byte write select inputs | Active-low controls for four 9-bit bytes; enables partial writes without read-modify-write overhead |
| K / K | Dual differential clock inputs | Rising edges drive all synchronous registers; K initiates transactions, K captures second data word |
| CQ / CQ | Output echo clocks | Free-running, edge-aligned copies of K/K; simplify system-level data capture without external delay tuning |
| QVLD | Data validity indicator | Asserted synchronously with CQ/CQ edges; eliminates need for setup/hold margin estimation in FPGA receivers |
| DOFF | DLL disable control | Pull-low disables DLL, reverting to DDR-I mode (≤167 MHz); used for fallback timing validation |
| ZQ | Output impedance calibration reference | Connects to external 240 Ω resistor to ground; sets CQ/Q output impedance to 48 Ω for controlled-impedance trace matching |
Key Features
| Feature | Design Value |
|---|---|
| 2-Word Burst Architecture | Halves address bus toggle rate while maintaining full 36-bit bandwidth - critical for reducing PCB routing congestion in switch fabric designs |
| Integrated Delay Lock Loop (DLL) | Aligns internal data launch to echo clock edges within ±50 ps; removes board-level skew compensation requirements |
| HSTL-18 Compatible I/O | Supports 1.4 V–1.8 V VDDQ with programmable drive strength - ensures signal integrity across long traces in backplane-connected modules |
| Synchronous Self-Timed Writes | On-chip write sequencing eliminates external write-enable timing constraints - simplifies FPGA interface logic and timing closure |
| JTAG 1149.1 Test Access Port | Full boundary-scan capability with TDI/TDO/TCK/TMS pins - enables in-system verification of solder joints and interconnects |
Applications
| Network Packet Buffering | High-Speed Switch Fabric Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and payloads in Layer 3 switches operating at 10 Gbps line rates. IC Role / Device Role / Timing Role: Primary burst-access SRAM providing 36-bit-wide, low-latency storage for header classification engines and queue management units. Use Value: 2.0-cycle latency and echo clocks enable deterministic 375 MHz operation without external phase alignment circuitry - reducing FPGA resource usage by ~18% versus discrete DDR timing solutions. |
Use Scenario: Interconnecting multiple ASICs in modular chassis-based routers using shared memory arbitration schemes. IC Role / Device Role / Timing Role: Depth-expanded memory bank delivering synchronized 72-bit aggregate bandwidth across dual CY7C1550V18 devices. Use Value: QVLD and CQ/CQ alignment allow zero-wait-state handoff between adjacent SRAMs - eliminating pipeline bubbles in cut-through forwarding paths. |
| Telecom Line Card Buffering | Test Equipment Pattern Memory |
|
Use Scenario: Temporary storage of ATM cell payloads and SONET/SDH frame segments in OC-192 line interface modules. IC Role / Device Role / Timing Role: High-reliability, temperature-stable SRAM interfacing directly to SerDes PHYs via HSTL-18 buses. Use Value: VDDQ range down to 1.4 V allows coexistence with 1.5 V FPGA I/O banks - avoiding level-shifter components and associated signal integrity degradation. |
Use Scenario: Storing stimulus and expected response vectors in automated test equipment (ATE) for high-pin-count SoC validation. IC Role / Device Role / Timing Role: Deterministic-latency memory serving as pattern generator/receiver buffer synchronized to ATE master clock. Use Value: DLL-disabled DDR-I mode (167 MHz) provides guaranteed timing margin during debug and characterization - enabling stable vector playback without recompilation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C362000B-375BIN | 2M × 36, 375 MHz, but uses SSTL-2 I/O (2.5 V) and lacks echo clocks or QVLD | Requires external clock forwarding and data capture logic; not drop-in compatible for CQ/QVLD-based FPGA interfaces | Select when legacy 2.5 V system voltage rails exist and DLL-free timing is acceptable |
| IS61WV204836BLL-375T | 2M × 36, 375 MHz, but asynchronous interface with no DDR or burst capability | Needs external address sequencer and handshake logic; increases FPGA gate count and timing uncertainty | Select only for cost-sensitive, non-burst applications where latency >10 ns is tolerable |
Compared with AS7C362000B-375BIN and IS61WV204836BLL-375T, the CY7C1550V18 uniquely delivers integrated echo clocks and QVLD for simplified high-speed capture, plus DLL-assisted sub-cycle timing - reducing system-level design effort by eliminating external timing alignment components and custom control logic.
Availability
CY7C1550V18 is available at Aetrix Electronics and suitable for network packet buffering, high-speed switch fabric memory, telecom line card buffering, and test equipment pattern memory requiring stable component supply across extended product lifecycles.
Supply support for CY7C1550V18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for communications and industrial markets.
The CY7C1550V18 belongs to Cypress's DDR-II+ SRAM product line, engineered specifically for deterministic-latency, high-bandwidth buffering in packet-switched infrastructure where echo-clock synchronization and burst efficiency are critical.
FAQ
What is the minimum VDDQ voltage supported by CY7C1550V18?
The CY7C1550V18 supports VDDQ from 1.4 V to VDD (1.8 V). Operation at 1.4 V is fully characterized per datasheet Rev. *D and maintains HSTL-18 compliance, enabling interoperability with 1.5 V FPGA I/O banks without level shifters. This lower voltage reduces I/O power by ~22% versus 1.8 V operation.
How does the DOFF pin affect timing behavior?
When DOFF is pulled LOW, the internal DLL is disabled and the device operates in DDR-I mode with maximum frequency limited to 167 MHz. All timing parameters shift to DDR-I specifications - including longer tAC and reduced tHZ - and echo clocks CQ/CQ become simple buffered copies of K/K without phase alignment.
Can CY7C1550V18 be used in depth-expanded configurations?
Yes - its automatic output tri-state on read deselect and deterministic 2.0-cycle latency enable seamless depth expansion. Two CY7C1550V18 devices can be interleaved on a 72-bit bus with no wait states, provided address decoding and R/W/LD control are synchronized to the same K/K clocks across both devices.
What is the function of the ZQ pin and how should it be terminated?
ZQ calibrates output driver impedance to match the system data bus. It must be connected to a 240 Ω resistor to ground; this sets CQ and DQ output impedance to 48 Ω (0.2 × 240 Ω). Direct connection to VDDQ enables minimum-impedance mode (~25 Ω), while floating or grounding ZQ violates specification and causes undefined output drive strength.
CY7C1550V18-375BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 375 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1550V18-375BZC FAQ
1.How can I place an order for CY7C1550V18-375BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1550V18-375BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1550V18-375BZC reliable?
The price and inventory of CY7C1550V18-375BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1550V18-375BZC is usually 5 days.
3.What payment methods are accepted for CY7C1550V18-375BZC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1550V18-375BZC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1550V18-375BZC?
CY7C1550V18-375BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1550V18-375BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1550V18-375BZC?
For technical support, including CY7C1550V18-375BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1550V18-375BZC requirements.
6.How does Aetrix verify that CY7C1550V18-375BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1550V18-375BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1550V18-375BZC meets industry standards.
7.What is the process for return or replacement of CY7C1550V18-375BZC?
All CY7C1550V18-375BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1550V18-375BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1550V18-375BZC part is unused and in its original packaging.
Return procedure for CY7C1550V18-375BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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