Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY7C1550V18-375BZC

Part No.:
CY7C1550V18-375BZC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1550V18-375BZC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,647

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C1550V18 from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous pipelined DDR-II+ SRAM with 2-word burst architecture, 2.0-cycle read latency, and 375 MHz clock operation. It delivers 750 Mbps data transfer via double-data-rate interface, uses HSTL I/O with VDDQ = 1.4V–1.8V, and integrates echo clocks (CQ/CQ) and QVLD for precise high-speed data capture in networking and packet buffering applications.

For engineers reviewing the CY7C1550V18 datasheet, CY7C1550V18 pinout, CY7C1550V18 application, or CY7C1550V18 equivalent, key selection criteria include 36-bit wide I/O bus support, DLL-enabled timing alignment at 375 MHz, synchronous self-timed writes, JTAG 1149.1 test access, and 165-ball FBGA package compatibility with high-density PCB layouts.

Technical Context

The CY7C1550V18 implements a dual-clock DDR-II+ architecture where K and K control all synchronous inputs/outputs on rising edges. Its internal organization comprises two 1M × 36 memory arrays, enabling 2-word burst reads/writes per address cycle with deterministic 2.0-cycle latency.

It features a Delay Lock Loop (DLL) for sub-cycle data placement accuracy, echo clocks CQ/CQ aligned to output data edges, and QVLD synchronized to CQ/CQ transitions - eliminating external strobe routing complexity in multi-SRAM systems. Byte write select signals BWS[3:0] provide granular 9-bit byte-level write control across the 36-bit data bus.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (2M × 36), supporting 36-bit parallel data path for high-throughput packet buffers
Max Clock Frequency 375 MHz - enables 750 MT/s effective bandwidth with DDR interface
Read Latency 2.0 clock cycles - fixed, deterministic delay from LD assertion to first valid Q word
VDD / VDDQ Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to 1.8 V - supports low-voltage HSTL-18 signaling
Burst Length 2-word burst - reduces address bus toggling frequency by 50% vs. single-word access
Package 165-ball FBGA (15 × 17 × 1.4 mm) - optimized for thermal dissipation and signal integrity in dense router line cards
JTAG Support IEEE 1149.1 compliant TAP - enables boundary-scan testing without additional test fixtures

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, Pb-free and RoHS-compliant options available.

Pin/Terminal Circuit Role Design Meaning
DQ[35:0] Synchronous bidirectional data bus 36-bit DDR data path; latched on both K and K rising edges; tri-stated automatically after read deselect
BWS[3:0] Byte write select inputs Active-low controls for four 9-bit bytes; enables partial writes without read-modify-write overhead
K / K Dual differential clock inputs Rising edges drive all synchronous registers; K initiates transactions, K captures second data word
CQ / CQ Output echo clocks Free-running, edge-aligned copies of K/K; simplify system-level data capture without external delay tuning
QVLD Data validity indicator Asserted synchronously with CQ/CQ edges; eliminates need for setup/hold margin estimation in FPGA receivers
DOFF DLL disable control Pull-low disables DLL, reverting to DDR-I mode (≤167 MHz); used for fallback timing validation
ZQ Output impedance calibration reference Connects to external 240 Ω resistor to ground; sets CQ/Q output impedance to 48 Ω for controlled-impedance trace matching

Key Features

Feature Design Value
2-Word Burst Architecture Halves address bus toggle rate while maintaining full 36-bit bandwidth - critical for reducing PCB routing congestion in switch fabric designs
Integrated Delay Lock Loop (DLL) Aligns internal data launch to echo clock edges within ±50 ps; removes board-level skew compensation requirements
HSTL-18 Compatible I/O Supports 1.4 V–1.8 V VDDQ with programmable drive strength - ensures signal integrity across long traces in backplane-connected modules
Synchronous Self-Timed Writes On-chip write sequencing eliminates external write-enable timing constraints - simplifies FPGA interface logic and timing closure
JTAG 1149.1 Test Access Port Full boundary-scan capability with TDI/TDO/TCK/TMS pins - enables in-system verification of solder joints and interconnects

Applications

Network Packet Buffering High-Speed Switch Fabric Memory

Use Scenario: Storing ingress/egress packet headers and payloads in Layer 3 switches operating at 10 Gbps line rates.

IC Role / Device Role / Timing Role: Primary burst-access SRAM providing 36-bit-wide, low-latency storage for header classification engines and queue management units.

Use Value: 2.0-cycle latency and echo clocks enable deterministic 375 MHz operation without external phase alignment circuitry - reducing FPGA resource usage by ~18% versus discrete DDR timing solutions.

Use Scenario: Interconnecting multiple ASICs in modular chassis-based routers using shared memory arbitration schemes.

IC Role / Device Role / Timing Role: Depth-expanded memory bank delivering synchronized 72-bit aggregate bandwidth across dual CY7C1550V18 devices.

Use Value: QVLD and CQ/CQ alignment allow zero-wait-state handoff between adjacent SRAMs - eliminating pipeline bubbles in cut-through forwarding paths.

Telecom Line Card Buffering Test Equipment Pattern Memory

Use Scenario: Temporary storage of ATM cell payloads and SONET/SDH frame segments in OC-192 line interface modules.

IC Role / Device Role / Timing Role: High-reliability, temperature-stable SRAM interfacing directly to SerDes PHYs via HSTL-18 buses.

Use Value: VDDQ range down to 1.4 V allows coexistence with 1.5 V FPGA I/O banks - avoiding level-shifter components and associated signal integrity degradation.

Use Scenario: Storing stimulus and expected response vectors in automated test equipment (ATE) for high-pin-count SoC validation.

IC Role / Device Role / Timing Role: Deterministic-latency memory serving as pattern generator/receiver buffer synchronized to ATE master clock.

Use Value: DLL-disabled DDR-I mode (167 MHz) provides guaranteed timing margin during debug and characterization - enabling stable vector playback without recompilation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C362000B-375BIN 2M × 36, 375 MHz, but uses SSTL-2 I/O (2.5 V) and lacks echo clocks or QVLD Requires external clock forwarding and data capture logic; not drop-in compatible for CQ/QVLD-based FPGA interfaces Select when legacy 2.5 V system voltage rails exist and DLL-free timing is acceptable
IS61WV204836BLL-375T 2M × 36, 375 MHz, but asynchronous interface with no DDR or burst capability Needs external address sequencer and handshake logic; increases FPGA gate count and timing uncertainty Select only for cost-sensitive, non-burst applications where latency >10 ns is tolerable

Compared with AS7C362000B-375BIN and IS61WV204836BLL-375T, the CY7C1550V18 uniquely delivers integrated echo clocks and QVLD for simplified high-speed capture, plus DLL-assisted sub-cycle timing - reducing system-level design effort by eliminating external timing alignment components and custom control logic.

Availability

CY7C1550V18 is available at Aetrix Electronics and suitable for network packet buffering, high-speed switch fabric memory, telecom line card buffering, and test equipment pattern memory requiring stable component supply across extended product lifecycles.

Supply support for CY7C1550V18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for communications and industrial markets.

The CY7C1550V18 belongs to Cypress's DDR-II+ SRAM product line, engineered specifically for deterministic-latency, high-bandwidth buffering in packet-switched infrastructure where echo-clock synchronization and burst efficiency are critical.

FAQ

What is the minimum VDDQ voltage supported by CY7C1550V18?

The CY7C1550V18 supports VDDQ from 1.4 V to VDD (1.8 V). Operation at 1.4 V is fully characterized per datasheet Rev. *D and maintains HSTL-18 compliance, enabling interoperability with 1.5 V FPGA I/O banks without level shifters. This lower voltage reduces I/O power by ~22% versus 1.8 V operation.

How does the DOFF pin affect timing behavior?

When DOFF is pulled LOW, the internal DLL is disabled and the device operates in DDR-I mode with maximum frequency limited to 167 MHz. All timing parameters shift to DDR-I specifications - including longer tAC and reduced tHZ - and echo clocks CQ/CQ become simple buffered copies of K/K without phase alignment.

Can CY7C1550V18 be used in depth-expanded configurations?

Yes - its automatic output tri-state on read deselect and deterministic 2.0-cycle latency enable seamless depth expansion. Two CY7C1550V18 devices can be interleaved on a 72-bit bus with no wait states, provided address decoding and R/W/LD control are synchronized to the same K/K clocks across both devices.

What is the function of the ZQ pin and how should it be terminated?

ZQ calibrates output driver impedance to match the system data bus. It must be connected to a 240 Ω resistor to ground; this sets CQ and DQ output impedance to 48 Ω (0.2 × 240 Ω). Direct connection to VDDQ enables minimum-impedance mode (~25 Ω), while floating or grounding ZQ violates specification and causes undefined output drive strength.

CY7C1550V18-375BZC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
375 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1550V18-375BZC FAQ

1.How can I place an order for CY7C1550V18-375BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1550V18-375BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1550V18-375BZC reliable?

The price and inventory of CY7C1550V18-375BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1550V18-375BZC is usually 5 days.

3.What payment methods are accepted for CY7C1550V18-375BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1550V18-375BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1550V18-375BZC?

CY7C1550V18-375BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1550V18-375BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1550V18-375BZC?

For technical support, including CY7C1550V18-375BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1550V18-375BZC requirements.

6.How does Aetrix verify that CY7C1550V18-375BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1550V18-375BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1550V18-375BZC meets industry standards.

7.What is the process for return or replacement of CY7C1550V18-375BZC?

All CY7C1550V18-375BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1550V18-375BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1550V18-375BZC part is unused and in its original packaging.

Return procedure for CY7C1550V18-375BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1550V18-375BZC Tags

  • CY7C1550V18-375BZC
  • CY7C1550V18-375BZC PDF
  • CY7C1550V18-375BZC Datasheet
  • CY7C1550V18-375BZC Specifications
  • CY7C1550V18-375BZC Images
  • Infineon Technologies
  • Infineon Technologies CY7C1550V18-375BZC
  • Buy CY7C1550V18-375BZC
  • CY7C1550V18-375BZC Price
  • CY7C1550V18-375BZC Distributor
  • CY7C1550V18-375BZC Supplier
  • CY7C1550V18-375BZC Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER