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Infineon Technologies CY7C1563XV18-633BZXC

Part No.:
CY7C1563XV18-633BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1563XV18-633BZXC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:136

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Product details

Overview

CY7C1563XV18-633BZXC from Infineon Technologies (formerly Cypress) is a 72-Mbit QDR® II+ Xtreme SRAM with 4M × 18 organization, 633 MHz clock frequency, 2.5-cycle read latency, and dual DDR interfaces for concurrent read/write operations. It delivers 1266 MT/s data transfer on both ports and operates with 1.8 V core supply and 1.5 V I/O (VDDQ), targeting high-bandwidth packet buffering in network switches and routers.

For engineers reviewing the CY7C1563XV18-633BZXC datasheet, CY7C1563XV18-633BZXC pinout, CY7C1563XV18-633BZXC application, or CY7C1563XV18-633BZXC equivalent, key selection criteria include burst depth (four-word), echo clock timing (CQ/CQ), QVLD validity signaling, DOFF-configurable PLL mode, and HSTL-compatible 165-ball FBGA package.

Technical Context

This SRAM implements true dual-port synchronous architecture with physically separate read and write data paths-no bus turnaround required. Its QDR II+ Xtreme core uses two independent DDR interfaces synchronized to K and K clocks, each capturing data on rising edges only, enabling full-duplex operation at 633 MHz.

The device integrates a programmable PLL for precise data placement, echo clocks (CQ/CQ) aligned to output data for simplified capture, and a dedicated QVLD signal that edge-aligns with CQ to indicate valid output data. DOFF pin enables runtime switching between 2.5-cycle QDR II+ mode and 1-cycle QDR I mode (≤167 MHz).

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (4M × 18 configuration)
Max Clock Frequency 633 MHz - determines maximum sustained bandwidth of 1266 MT/s per port
Read Latency 2.5 cycles - fixed pipeline delay from address latch to first valid Q[x] output when DOFF = HIGH
Interface Type DDR on both read and write ports - doubles effective data rate without increasing clock frequency
Supply Voltages VDD = 1.8 V ±0.1 V (core); VDDQ = 1.4–1.6 V (I/O) - supports 1.5 V HSTL signaling
Package 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count memory in dense routing environments
Standards Compliance JTAG IEEE 1149.1 - enables boundary-scan testing and system-level debug during production and field service

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, Pb-free.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous write data inputs Latched on rising edges of K/K; 18-bit parallel input path for burst writes
Q[17:0] Synchronous read data outputs DDR-aligned outputs driven on K/K rising edges; tristated when RPS deasserted
RPS / WPS Read/Write Port Select Active-low enables port access; controls initiation and deselection of respective transactions
BWS[1:0] Byte Write Selects Independent 9-bit byte enables (BWS0 → D[8:0], BWS1 → D[17:9]) for partial-word writes
K / K Dual input clocks Complementary clocks used for all synchronous timing; only rising edges sampled
CQ / CQ Echo clocks Free-running, phase-aligned copies of K/K for source-synchronous data capture at receiver
QVLD Valid data indicator Edge-aligned with CQ/CQ; asserts one cycle after first valid Q[x] word, confirms data integrity
DOFF PLL disable control Active-low disables internal PLL; reverts device to QDR I timing (1-cycle latency, ≤167 MHz)
ZQ Impedance calibration input Connects to external resistor to ground to tune CQ/Q[x] output drive strength to match PCB trace impedance

Key Features

Feature Design Value
Four-word burst architecture Reduces address bus toggling by 75% versus single-word access-lowers EMI and simplifies controller logic
Separate read/write data ports Enables simultaneous read and write to different addresses-critical for full-duplex traffic buffers in telecom ASICs
Source-synchronous echo clocks (CQ/CQ) Eliminates skew-sensitive strobe routing; allows reliable data capture at 1266 MT/s without complex deskew circuitry
Programmable output impedance via ZQ Enables dynamic matching to 40–60 Ω PCB traces-reduces reflections and improves signal integrity across voltage/temp
DOFF-selectable latency mode Hardware-switchable between 2.5-cycle (QDR II+) and 1-cycle (QDR I) modes-supports legacy timing migration or low-power operation

Applications

Network Packet Buffering High-Speed Test Equipment Memory

Use Scenario: Storing ingress/egress packet headers and payloads in Layer 3 switches with line-rate forwarding.

IC Role / Device Role / Timing Role: Dual-port SRAM serving as shared buffer between ingress parser and egress scheduler, using concurrent reads/writes at 633 MHz.

Use Value: Four-word burst and zero-turnaround architecture sustain 100 Gbps+ throughput while minimizing controller overhead and jitter-sensitive timing margins.

Use Scenario: Capturing high-fidelity waveform samples in automated test equipment (ATE) with real-time pattern generation.

IC Role / Device Role / Timing Role: High-bandwidth memory staging buffer between ADC/DAC and FPGA-based pattern engine, synchronized via K/K and CQ/CQ.

Use Value: Echo clocks and QVLD enable deterministic, sub-nanosecond data capture alignment-essential for <100 ps timing resolution in ATE systems.

Telecom Baseband Processing AI Accelerator On-Chip Cache

Use Scenario: Interfacing between digital front-end (DFE) and baseband processor in 5G massive MIMO radio units.

IC Role / Device Role / Timing Role: Low-latency, pipelined SRAM acting as channel estimation coefficient store and FFT result scratchpad, accessed under strict TDD timing constraints.

Use Value: 2.5-cycle read latency and HSTL I/O ensure predictable access within 4–5 ns windows-meeting 3GPP sub-6 GHz frame timing budgets.

Use Scenario: Serving as high-speed L2/L3 cache between AI tensor cores and memory controllers in edge inference accelerators.

IC Role / Device Role / Timing Role: Burst-access SRAM providing deterministic bandwidth to multiple parallel compute engines, coordinated via RPS/WPS and BWS signals.

Use Value: Independent port selects and byte-write capability allow fine-grained, conflict-free data sharing across heterogeneous workloads without arbitration stalls.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1563XV18-553BZXC Lower max clock: 553 MHz (vs. 633 MHz); same 4M×18 config, 2.5-cycle latency, identical pinout Targeted at cost-optimized systems where 12.7% lower bandwidth is acceptable (e.g., mid-tier enterprise switches) Select when system clock tree limits to ≤553 MHz or thermal budget restricts higher-frequency operation.
AS7C3256A-15JCIN Asynchronous CMOS SRAM; 32K×8, 15 ns access; no DDR, no echo clocks, no PLL, SOJ-32 package Used in legacy microcontroller peripherals or simple FIFOs-not suitable for concurrent high-speed packet buffering Only consider for non-critical, low-bandwidth control-plane storage where QDR timing and features are unnecessary.

Compared with CY7C1563XV18-553BZXC, the -633BZXC delivers +14.5 GB/s peak bandwidth and tighter setup/hold margins; versus AS7C3256A-15JCIN, it provides true dual-port concurrency, burst efficiency, and source-synchronous timing-enabling architectures impossible with asynchronous SRAM.

Availability

CY7C1563XV18-633BZXC is available at Aetrix Electronics and suitable for network packet buffering, high-speed test equipment memory, telecom baseband processing, and AI accelerator on-chip cache requiring stable component supply and long-term industrial availability.

Supply support for CY7C1563XV18-633BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and memory solutions for automotive, industrial, and communications markets.

CY7C1563XV18 belongs to Infineon's QDR® II+ Xtreme SRAM product line, engineered specifically for deterministic, ultra-high-bandwidth data buffering in next-generation networking and signal processing systems where latency predictability and concurrent access are non-negotiable.

FAQ

What is the function of the DOFF pin?

The DOFF (PLL Turn Off) pin is an active-low control that disables the internal phase-locked loop. When asserted LOW, the device reverts to QDR I timing mode with 1-cycle read latency and a maximum operating frequency of 167 MHz. For normal QDR II+ operation at 633 MHz with 2.5-cycle latency, DOFF must be pulled HIGH via ≤10 kΩ resistor to VDDQ.

How does the ZQ pin affect signal integrity?

The ZQ pin calibrates the output driver impedance of Q[17:0], CQ, and CQ pins to match the system's data bus characteristic impedance. Connecting ZQ to a precision resistor (e.g., 240 Ω) to ground sets output impedance to 0.2 × RQ (e.g., 48 Ω). This minimizes signal reflections and ensures clean eye diagrams at 1266 MT/s, especially critical in multi-drop or long-trace layouts.

Can CY7C1563XV18-633BZXC perform simultaneous read and write to the same address?

No. While the device supports fully concurrent read and write operations to *different* addresses due to its dual-port architecture, writing to an address currently being read from results in undefined data on the read port. The memory array enforces address collision avoidance at the internal decode level-reads and writes to identical addresses are not permitted in the same cycle and must be sequenced with appropriate interlock logic in the controller.

What is the role of QVLD in system timing validation?

QVLD is a synchronous, edge-aligned output that pulses high exactly one cycle after the first valid data word appears on Q[17:0], and remains high for the duration of the four-word burst. It provides unambiguous, clock-domain-aligned confirmation of data validity-eliminating the need for complex timing margin analysis or static timing verification of Q[x] setup/hold at the receiver, especially under PVT variation.

CY7C1563XV18-633BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
633 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1563XV18-633BZXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1563XV18-633BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of CY7C1563XV18-633BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1563XV18-633BZXC is usually 5 days.

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CY7C1563XV18-633BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1563XV18-633BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1563XV18-633BZXC?

For technical support, including CY7C1563XV18-633BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1563XV18-633BZXC requirements.

6.How does Aetrix verify that CY7C1563XV18-633BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1563XV18-633BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1563XV18-633BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1563XV18-633BZXC?

All CY7C1563XV18-633BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1563XV18-633BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1563XV18-633BZXC part is unused and in its original packaging.

Return procedure for CY7C1563XV18-633BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1563XV18-633BZXC Tags

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