Infineon Technologies CY7C1564XV18-366BZXC
- Part No.:
- CY7C1564XV18-366BZXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1564XV18-366BZXC.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:2,401
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1564XV18-366BZXC from Cypress Semiconductor is a 2M × 36, 72-Mbit QDR® II+ Xtreme SRAM with separate read/write ports, 2.5-cycle read latency, 366 MHz operation (900 Mbps DDR data rate), and HSTL I/Os supporting 1.5 V supply. It delivers concurrent burst transfers in high-bandwidth networking buffers and packet processors.
For engineers reviewing the CY7C1564XV18-366BZXC datasheet, CY7C1564XV18-366BZXC pinout, CY7C1564XV18-366BZXC application, or CY7C1564XV18-366BZXC equivalent, key selection criteria include dual-port timing independence, echo clock (CQ/CQ) synchronization for high-speed capture, DOFF-configurable latency mode, and 165-ball FBGA package compatibility with dense PCB layouts.
Technical Context
This SRAM implements QDR II+ Xtreme architecture with fully independent synchronous read and write ports sharing one multiplexed address bus. Address latching occurs on alternating rising edges of K and K clocks, enabling true concurrency without bus turnaround.
It integrates a PLL for precise data placement, supports programmable output impedance via ZQ calibration, and uses edge-aligned QVLD to indicate valid DDR output data synchronized to CQ/CQ. The DOFF pin selects between 2.5-cycle (PLL enabled) and 1-cycle (QDR-I mode) read latency.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 organization) |
| Max Clock Frequency | 366 MHz - enables 732 MT/s effective throughput per port |
| Read Latency | 2.5 cycles (DOFF = HIGH) - deterministic timing for pipeline alignment |
| Data Rate | 900 Mbps DDR - two 36-bit words per clock cycle on each port |
| Supply Voltages | VDD = 1.8 V ±0.1 V; VDDQ = 1.4–1.6 V - supports 1.5 V I/O interface standard |
| Interface Standard | HSTL Class I inputs / variable-drive HSTL outputs - ensures signal integrity at >300 MHz |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - fine-pitch layout for high-speed routing |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, with 0.8 mm ball pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data input | 36-bit wide DDR input bus sampled on rising edges of K/K; supports byte-selectable writes via BWS[3:0] |
| Q[35:0] | Synchronous read data output | 36-bit wide DDR output bus edge-aligned to CQ/CQ; tristated when RPS inactive |
| K / K | Dual-phase input clocks | Rising edges control all synchronous operations; K drives read port, K drives write port |
| CQ / CQ | Output-synchronized echo clocks | Free-running copies of K/K with matched skew - enable source-synchronous data capture |
| QVLD | Valid data indicator | Asserted coincident with first valid Q[35:0] word - eliminates need for fixed delay margining |
| DOFF | PLL disable control | LOW forces QDR-I mode (1-cycle latency, ≤167 MHz); HIGH enables full QDR-II+ timing |
| ZQ | Output impedance calibration reference | Connect to resistor-to-ground (RQ) to tune CQ/Q output drive strength to match 50 Ω trace impedance |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write ports | Eliminates data bus turnaround delays and contention - enables sustained full-duplex bandwidth |
| Two-word burst architecture | Reduces required address transition rate by 2× - lowers routing complexity and timing closure effort |
| Edge-aligned QVLD + echo clocks | Removes setup/hold uncertainty at receiver - simplifies PCB layout and eliminates external delay tuning |
| Programmable output impedance (ZQ) | Enables dynamic drive strength matching to PCB trace impedance - improves signal integrity without board redesign |
| DOFF-configurable latency mode | Single-pin hardware switch between QDR-II+ (2.5-cycle) and legacy QDR-I (1-cycle) timing - aids migration and interoperability |
Applications
| Network Packet Buffer | High-Speed Test Equipment Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and payloads in 10G/25G Ethernet line cards. IC Role / Device Role / Timing Role: Dual-port SRAM acting as zero-latency buffer between MAC and traffic manager, with concurrent read (transmit path) and write (receive path) access. Use Value: 900 Mbps DDR throughput per port sustains line-rate packet buffering without stall cycles or FIFO overflow. |
Use Scenario: Capturing high-fidelity waveform samples in automated test equipment (ATE) pattern generators. IC Role / Device Role / Timing Role: High-speed acquisition memory interfacing directly to 36-bit parallel DACs and ADCs with deterministic 2.5-cycle latency. Use Value: Echo clocks (CQ/CQ) and QVLD eliminate timing margining overhead - enabling reliable 366 MHz sampling without custom delay ICs. |
| Telecom Baseband Processing | Real-Time Video Frame Buffer |
|
Use Scenario: Interleaving channelized data streams in LTE/5G baseband units with strict jitter tolerance. IC Role / Device Role / Timing Role: Synchronous burst memory providing low-jitter, phase-locked data staging between FPGA-based FFT engines and RF front-end interfaces. Use Value: PLL-derived timing and HSTL I/Os maintain <15 ps cycle-to-cycle jitter - meeting 3GPP TS 36.104 spectral mask requirements. |
Use Scenario: Storing uncompressed 4K video frames in broadcast graphics processors requiring sub-microsecond access. IC Role / Device Role / Timing Role: Dual-port frame buffer allowing simultaneous write of incoming sensor data and read of rendered overlay layers. Use Value: Concurrent 36-bit reads/writes at 366 MHz deliver 26.4 GB/s aggregate bandwidth - sufficient for 60 fps 4K@12-bit RGB. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C36256A-166BIN | Asynchronous 256K × 36 SRAM; no DDR, no echo clocks, no PLL; 166 MHz max | Lacks concurrent read/write; requires external handshake logic; unsuitable for >200 MHz systems | Select only for cost-sensitive, non-pipelined designs where latency predictability is secondary to BOM simplicity |
| MT47H64M16HR-37E | DDR2 SDRAM; 64M × 16; 375 MHz clock; requires refresh, command decoding, and burst-length configuration | Higher density but adds controller overhead; not pin-compatible; introduces variable latency | Choose when system already includes DDR2 controller and needs >72 Mbit capacity; avoid for deterministic real-time buffering |
Compared with AS7C36256A-166BIN and MT47H64M16HR-37E, CY7C1564XV18-366BZXC provides guaranteed 2.5-cycle latency, zero-refresh operation, and native echo-clock timing - making it uniquely suited for jitter-critical, full-duplex packet and sample buffering where deterministic bandwidth is non-negotiable.
Availability
CY7C1564XV18-366BZXC is available at Aetrix Electronics and suitable for network packet buffering, high-speed test instrumentation, telecom baseband processing, and real-time video frame storage requiring stable component supply across multi-year production cycles.
Supply support for CY7C1564XV18-366BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding embedded and communications systems, with focus on signal integrity, timing precision, and power efficiency.
CY7C1564XV18 belongs to the QDR® II+ Xtreme SRAM product line, engineered specifically for deterministic, low-latency, full-duplex data buffering in infrastructure-grade networking and test equipment where bus turnaround overhead must be eliminated.
FAQ
What is the function of the DOFF pin on CY7C1564XV18-366BZXC?
The DOFF pin controls internal PLL operation: when pulled HIGH, the device operates in QDR-II+ mode with 2.5-cycle read latency and up to 366 MHz clock rate; when pulled LOW, it reverts to QDR-I mode with 1-cycle latency and maximum 167 MHz operation. This allows hardware-selectable timing modes without firmware changes or external configuration registers.
How does the ZQ pin affect signal integrity in high-speed designs?
ZQ enables on-die output impedance calibration: connecting an external resistor (typically 50 Ω) between ZQ and ground tunes CQ, CQ, and Q[35:0] driver strength to match PCB trace impedance. This reduces reflections and improves eye diagram margins - critical for reliable 900 Mbps DDR signaling without adding series termination resistors.
Can CY7C1564XV18-366BZXC perform simultaneous read and write operations to the same memory location?
No - while read and write ports operate concurrently, the device enforces data coherency by ensuring that a read access returns the most recently written data. Internal arbitration prevents conflicting access to the same address during overlapping cycles, guaranteeing consistent output even under full-duplex load without external lock logic.
What is the purpose of the QVLD signal, and how is it timed relative to CQ and Q[35:0]?
QVLD is asserted synchronously with the first valid 36-bit word on Q[35:0], edge-aligned to the rising edge of CQ (for read port). It eliminates the need for fixed delay compensation or eye-centering algorithms at the receiver - designers can use QVLD directly as a latch-enable signal for downstream capture registers, reducing timing closure effort.
CY7C1564XV18-366BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 366 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1564XV18-366BZXC FAQ
1.How can I place an order for CY7C1564XV18-366BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1564XV18-366BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1564XV18-366BZXC reliable?
The price and inventory of CY7C1564XV18-366BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1564XV18-366BZXC is usually 5 days.
3.What payment methods are accepted for CY7C1564XV18-366BZXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1564XV18-366BZXC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1564XV18-366BZXC?
CY7C1564XV18-366BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1564XV18-366BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1564XV18-366BZXC?
For technical support, including CY7C1564XV18-366BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1564XV18-366BZXC requirements.
6.How does Aetrix verify that CY7C1564XV18-366BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1564XV18-366BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1564XV18-366BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1564XV18-366BZXC?
All CY7C1564XV18-366BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1564XV18-366BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1564XV18-366BZXC part is unused and in its original packaging.
Return procedure for CY7C1564XV18-366BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1564XV18-366BZXC Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

