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Infineon Technologies CY7C1565KV18-400BZC

Part No.:
CY7C1565KV18-400BZC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1565KV18-400BZC.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,776

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Product details

Overview

CY7C1565KV18-400BZC from Cypress Semiconductor is a 72-Mbit QDR® II+ SRAM with 2M × 36 organization, 400 MHz maximum clock frequency, 2.5-cycle read latency (DOFF = HIGH), and 165-ball FBGA (13 × 15 × 1.4 mm) package. It features separate read/write ports, DDR interfaces on both ports (2.2 Gbps effective data rate), and HSTL I/O compatible with 1.4 V–1.8 V VDDQ for high-bandwidth packet buffering in network line cards.

For engineers reviewing the CY7C1565KV18-400BZC datasheet, CY7C1565KV18-400BZC pinout, CY7C1565KV18-400BZC application, or CY7C1565KV18-400BZC equivalent, key selection criteria include burst depth (four 36-bit words), echo clock support (CQ/CQ), QVLD timing alignment, and PLL-enabled 2.5-cycle latency mode versus QDR I fallback at DOFF = LOW.

Technical Context

The device implements a true quad data rate architecture with independent read and write ports sharing one multiplexed address bus, eliminating bus turnaround overhead. Each port uses DDR signaling synchronized to K (positive) and K̄ (negative) clocks, with all synchronous inputs and outputs registered to rising edges of those clocks.

Internal operation relies on a phase-locked loop (PLL) for precise data placement when DOFF = HIGH, enabling 2.5-cycle read latency and full coherency across four-word bursts. When DOFF = LOW, the PLL is disabled and the device reverts to QDR I timing with 1-cycle latency and reduced max frequency (≤167 MHz).

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (2M × 36 configuration)
Max Clock Frequency 400 MHz - defines maximum sustained bandwidth of 2.88 GB/s (4 × 36-bit × 400 MHz)
Read Latency 2.5 cycles (DOFF = HIGH) - enables deterministic timing for pipeline-aligned data capture using CQ/CQ
I/O Voltage Range VDDQ = 1.4 V to 1.8 V - supports mixed-voltage system integration with HSTL Class I/II compatibility
Package 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count, high-speed memory in telecom PCBs
Data Interface DDR on both read and write ports - doubles effective throughput without increasing clock frequency
Core Supply VDD = 1.8 V ± 0.1 V - low-power, noise-sensitive core rail requiring tight regulation

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant, with 0.8 mm ball pitch.

Pin/Terminal Circuit Role Design Meaning
K / K̄ Input clocks Rising edges control all synchronous register sampling; K drives read operations, K̄ drives write operations - dual-edge referenced but edge-triggered only on rising transitions
CQ / CQ̄ Echo clocks Free-running output clocks synchronized to K/K̄ - used by external logic to latch Q[35:0] with zero skew, critical for >400 MHz timing closure
Q[35:0] Read data outputs 36-bit DDR outputs aligned to CQ/CQ̄ edges; tri-stated automatically when RPS is deasserted
D[35:0] Write data inputs 36-bit DDR inputs sampled on K/K̄ rising edges; ignored unless WPS is active
RPS / WPS Port select controls Active-low synchronous enables - decouple read/write arbitration at clock domain level, enabling concurrent access
BWS[3:0] Byte write selects Four independent 9-bit byte masks (BWS0→D[8:0], BWS1→D[17:9], etc.) - enable partial writes without read-modify-write overhead
QVLD Valid data indicator Output pulse edge-aligned to CQ/CQ̄ - signals validity of current Q[35:0] word, essential for burst-aware FIFO control
DOFF PLL disable input Active-low control that disables internal PLL - forces QDR I mode (1-cycle latency, ≤167 MHz) for backward compatibility or debug

Key Features

Feature Design Value
Separate read/write ports Eliminates data bus turnaround delay and contention - enables simultaneous read-after-write within same clock cycle boundary
Four-word burst architecture Reduces address bus toggling by 75% vs. single-word access - lowers EMI and simplifies routing in dense switch fabric designs
Echo clocks (CQ/CQ̄) Provides deterministic, zero-skew capture reference for Q[35:0] - removes setup/hold uncertainty in >500 Mbps DDR links
Programmable output impedance (ZQ) Enables on-die termination tuning via external 50 Ω resistor - matches trace impedance without discrete resistors, saving board space
JTAG 1149.1 compliance Supports boundary scan testing and in-system programming - critical for validation of high-density memory interconnects in production

Applications

Network Packet Buffering High-Speed Switch Fabric

Use Scenario: Storing ingress/egress packet headers and metadata in 10G/25G Ethernet line cards.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as first-level buffer between MAC and traffic manager, with RPS/WPS arbitrated per packet flow.

Use Value: Concurrent read/write eliminates serialization bottleneck - sustains full line-rate throughput with <10 ns access jitter under burst load.

Use Scenario: Interconnecting crossbar scheduler and port adapters in modular chassis switches.

IC Role / Device Role / Timing Role: Shared memory resource for cell-based switching, where read port feeds egress queues and write port ingests ingress cells.

Use Value: Four-word burst delivers 144-bit cell payload per 2-clock window - reduces scheduler arbitration overhead by 4× vs. single-word SRAM.

Telecom Baseband Processing Test Equipment Memory Buffer

Use Scenario: Real-time buffering of IQ samples between FPGA-based FFT engines and DAC/ADC interfaces in 5G NR base stations.

IC Role / Device Role / Timing Role: Low-latency, deterministic memory for time-critical sample streaming - QVLD and CQ ensure cycle-accurate data handoff.

Use Value: 2.5-cycle latency enables tight pipeline coupling with FPGA logic - achieves sub-10 ns jitter margin required for EVM < 1.5%.

Use Scenario: Capturing high-speed serial protocol traces (PCIe Gen4, USB3.2) in automated test systems.

IC Role / Device Role / Timing Role: Deep buffer for real-time pattern matching - write port captures raw stream while read port services analysis engine.

Use Value: Independent port timing allows continuous capture at 400 MHz while background readout occurs at different rate - no dead time between triggers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T36150L10BG 72-Mbit QDR II+ SRAM, 1000 Mbps DDR interface, 165-ball FBGA, but rated for 100 MHz–333 MHz only Limited to ≤333 MHz operation - insufficient for 400 MHz design target; requires clock scaling or redesign Select only if system clock budget is ≤333 MHz and legacy IDT toolchain compatibility is required
ISSI IS61WV102436B Asynchronous 36-bit SRAM, 1024K × 36, no DDR/QDR architecture, no echo clocks or QVLD No burst capability or concurrent port support - introduces bus turnaround delays and limits throughput to ~150 MB/s Acceptable only for cost-sensitive, non-real-time buffering where latency and bandwidth are secondary

Compared with IDT72T36150L10BG and IS61WV102436B, CY7C1565KV18-400BZC uniquely delivers guaranteed 400 MHz operation with echo-clock–assisted timing closure and deterministic 2.5-cycle latency - making it the only viable option for line-rate packet buffering in next-gen 25G+ infrastructure.

Availability

CY7C1565KV18-400BZC is available at Aetrix Electronics and suitable for network line cards, telecom baseband units, and high-speed test equipment requiring stable component supply, long-lifecycle assurance, and Pb-free manufacturing compliance.

Supply support for CY7C1565KV18-400BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and timing precision.

The CY7C1565KV18 belongs to Cypress's QDR II+ SRAM product line, engineered specifically for deterministic, low-jitter, high-throughput memory interfacing in packet-switched infrastructure where bus turnaround and latency predictability are critical.

FAQ

What is the function of the DOFF pin, and how does it affect timing?

The DOFF pin disables the internal PLL when asserted LOW. In this state, the device operates in QDR I mode with 1-cycle read latency and a maximum frequency of 167 MHz. When DOFF = HIGH, the PLL is active, enabling 2.5-cycle latency and full 400 MHz operation. Timing parameters differ significantly between modes - the datasheet provides separate AC tables for each configuration.

How does the ZQ pin configure output drive strength?

ZQ connects to an external 50 Ω resistor to ground, enabling automatic calibration of CQ, CQ̄, and Q[35:0] output impedance to 0.2 × RQ (i.e., 10 Ω). If tied directly to VDDQ, the device enters minimum-impedance mode (~7 Ω). ZQ must never be left floating or tied to GND, as this disables calibration and risks signal integrity failure.

Can RPS and WPS be asserted simultaneously, and what happens during overlap?

Yes - RPS and WPS may be asserted concurrently. The device guarantees full data coherency: a read initiated in the same cycle as a write to the same address returns the most recently written data after the write completes. This behavior is enabled by internal pipelining and self-timed write circuitry, not by external arbitration.

What is the role of QVLD, and how is it timed relative to CQ/CQ̄?

QVLD is an output strobe edge-aligned to CQ and CQ̄, indicating that the corresponding Q[35:0] word is valid and stable. It asserts one cycle before the first data word in a burst and remains active for all four words. Its timing is specified in the "Switching Characteristics" table (page 23 of datasheet) and must be used to qualify data capture in FPGA logic.

CY7C1565KV18-400BZC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
400 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1565KV18-400BZC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1565KV18-400BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of CY7C1565KV18-400BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1565KV18-400BZC is usually 5 days.

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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1565KV18-400BZC?

For technical support, including CY7C1565KV18-400BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1565KV18-400BZC requirements.

6.How does Aetrix verify that CY7C1565KV18-400BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1565KV18-400BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1565KV18-400BZC meets industry standards.

7.What is the process for return or replacement of CY7C1565KV18-400BZC?

All CY7C1565KV18-400BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1565KV18-400BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1565KV18-400BZC part is unused and in its original packaging.

Return procedure for CY7C1565KV18-400BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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