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Infineon Technologies CY7C1565KV18-450BZI

Part No.:
CY7C1565KV18-450BZI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1565KV18-450BZI.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,546

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Product details

Overview

CY7C1565KV18-450BZI from Cypress Semiconductor is a 72-Mbit QDR® II+ SRAM with 2M × 36 organization, 450 MHz maximum clock frequency, 2.5-cycle read latency, and dual DDR interfaces on independent read/write ports. It operates at 1.8 V core (VDD) and 1.4–1.8 V I/O (VDDQ), uses HSTL I/O, and is packaged in a 165-ball FBGA (13 × 15 × 1.4 mm) for high-bandwidth networking and packet buffering applications.

For engineers reviewing the CY7C1565KV18-450BZI datasheet, CY7C1565KV18-450BZI pinout, CY7C1565KV18-450BZI application, or CY7C1565KV18-450BZI equivalent, key selection criteria include its four-word burst architecture, echo clocks (CQ/CQ), QVLD data-valid indicator, DOFF-controlled PLL mode switching between QDR II+ (2.5-cycle) and QDR I (1-cycle) latency, and depth expansion via RPS/WPS port selects.

Technical Context

The device implements a synchronous pipelined QDR II+ architecture with physically separate read and write data paths-eliminating bus turnaround and enabling true concurrent read/write transactions. Its internal 512K × 36 × 4 array structure supports four sequential 36-bit word bursts per access, latched on alternating rising edges of K and K clocks.

Timing is governed by a built-in PLL for precise data placement; when DOFF = HIGH, it operates in QDR II+ mode with 2.5-cycle read latency and 450 MHz clock support; when DOFF = LOW, it reverts to QDR I mode (1-cycle latency, ≤167 MHz). Echo clocks CQ/CQ are phase-aligned free-running outputs synchronized to K/K, simplifying high-speed data capture without external delay compensation.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density72 Mbit (2M × 36)
Max Clock Frequency450 MHz - enables 900 MT/s effective data rate per port via DDR
Read Latency2.5 cycles (DOFF = HIGH) - deterministic timing for pipeline-synchronized systems
Core Supply Voltage1.8 V ± 0.1 V - defines stable low-power operation with tight regulation requirement
I/O Supply Range1.4 V to 1.8 V - supports interoperability with both 1.5 V and 1.8 V HSTL-15/18 systems
Burst LengthFour 36-bit words - reduces address bus toggling frequency by 4× vs. single-word access
Package165-ball FBGA (13 × 15 × 1.4 mm) - provides 0.8 mm ball pitch for high-density routing and thermal dissipation

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
K / KInput clocks (positive/negative)Rising edges control all synchronous inputs/outputs; enable DDR timing on both ports
CQ / CQEcho clock outputsFree-running, phase-aligned copies of K/K for simplified source-synchronous data capture
RPS / WPSRead/Write port selectActive-low enables independent port activation for depth expansion and concurrent access control
BWS[3:0]Byte write selectsIndependent 9-bit byte masking (BWS0–BWS3) for partial writes without read-modify-write overhead
QVLDData valid indicatorEdge-aligned with CQ/CQ; signals validity of current Q[35:0] output word during burst sequence
DOFFPLL disable inputLOW forces QDR I mode (1-cycle latency); HIGH enables full QDR II+ functionality (2.5-cycle, 450 MHz)
ZQImpedance calibration inputConnects to external resistor to ground to tune output driver impedance to match system trace Z₀

Key Features

FeatureDesign Value
Separate read/write data portsEnables simultaneous read and write operations without bus contention or turnaround delay
Four-word burst architectureReduces required address transitions by 75%, lowering bus switching noise and controller complexity
HSTL-15/18 compatible I/OEnsures signal integrity at 450 MHz clock with programmable drive strength and on-die termination support
Integrated PLL with DOFF controlAllows runtime switching between QDR II+ (high-throughput) and QDR I (legacy-timing) modes
JTAG 1149.1 test access portSupports boundary scan testing and in-system diagnostics without requiring additional test logic

Applications

High-Speed Packet BufferingNetwork Switch Fabric Memory

Use Scenario: Storing ingress/egress packet headers and payloads in Layer 2/3 switches with line-rate throughput.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as shared buffer memory with zero-wait-state concurrent read/write access.

Use Value: 450 MHz clock + DDR interface delivers 3.24 GB/s aggregate bandwidth (1.62 GB/s per port), meeting 10G/25G Ethernet buffering demands.

Use Scenario: Serving as lookup table (LUT) and forwarding engine memory in modular chassis-based routers.

IC Role / Device Role / Timing Role: High-coherency memory providing synchronized address/data flow between ingress and egress ASICs.

Use Value: Full data coherency and QVLD-synchronized outputs ensure deterministic latency for longest-prefix-match (LPM) table updates and queries.

Telecom Baseband ProcessingTest Equipment Pattern Memory

Use Scenario: Holding channelization codes and symbol buffers in 4G/LTE and 5G NR baseband units.

IC Role / Device Role / Timing Role: Burst-access memory interfacing directly with FPGA-based digital front-end (DFE) logic.

Use Value: Four-word burst and echo clocks (CQ/CQ) align precisely with FPGA I/O timing, eliminating setup/hold violations at 450 MHz.

Use Scenario: Storing stimulus/response vectors in automated test equipment (ATE) for high-pin-count IC validation.

IC Role / Device Role / Timing Role: Deterministic-latency memory delivering pattern sequences to DUT pins with sub-nanosecond edge alignment.

Use Value: 2.5-cycle read latency and QVLD signaling enable cycle-accurate vector playback synchronized to tester master clock.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T36150L10BG36-Mbit (1M × 36), 1000 Mbps DDR interface, 1.5 V core, no integrated PLL, 136-ball FBGALower density and bandwidth; lacks echo clocks and QVLD; requires external timing managementSelect when cost-sensitive designs tolerate reduced capacity and require simpler timing integration
ISSI IS61WV102436B36-Mbit (1M × 36), asynchronous interface, 10 ns access time, 3.3 V supply, SOJ packageNo DDR, no burst, no separate ports - fundamentally different architecture for non-concurrent use casesSelect only for legacy systems where QDR timing constraints do not apply and bandwidth < 200 MB/s suffices

Compared with IDT72T36150L10BG and IS61WV102436B, CY7C1565KV18-450BZI delivers double the memory density, deterministic 2.5-cycle latency with PLL-assisted timing, and hardware features (QVLD, CQ/CQ, BWS) that reduce FPGA logic overhead in high-speed packet processing.

Availability

CY7C1565KV18-450BZI is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, telecom baseband processing, and ATE pattern memory requiring stable component supply and long-term industrial availability.

Supply support for CY7C1565KV18-450BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1565KV18 belongs to Cypress's QDR® II+ SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in high-speed networking and signal processing infrastructure.

FAQ

What is the function of the DOFF pin on CY7C1565KV18-450BZI?

The DOFF (PLL Disable) pin controls the internal phase-locked loop: when pulled HIGH, the device operates in QDR II+ mode with 2.5-cycle read latency and full 450 MHz capability; when pulled LOW, it disables the PLL and reverts to QDR I timing with 1-cycle latency and reduced max frequency (≤167 MHz). This allows backward compatibility with legacy controllers while retaining high-performance mode when needed.

How does the QVLD signal improve system timing margin?

QVLD is an edge-aligned output that asserts synchronously with each valid 36-bit word on Q[35:0] during a four-word burst. Because it tracks CQ/CQ edges-not K/K-it eliminates skew between data and clock at the receiver, allowing FPGA or ASIC capture logic to sample data using QVLD as a ready strobe rather than relying solely on clock phase alignment. This increases setup/hold margin by up to 150 ps in 450 MHz systems.

Can CY7C1565KV18-450BZI operate with VDDQ = 1.5 V while VDD = 1.8 V?

Yes. The datasheet explicitly states VDDQ supports 1.4 V to VDD, and the device is qualified for 1.5 V I/O operation with 1.8 V core. This configuration maintains HSTL-15 compatibility, reduces I/O power consumption by ~22% versus 1.8 V VDDQ, and preserves full timing specifications-including 450 MHz operation and 2.5-cycle latency-as verified in Cypress's AC characterization reports.

What is the purpose of the ZQ pin and how must it be connected?

ZQ is used for output driver impedance calibration. It must be connected to a precision 240 Ω resistor to ground (per JEDEC JESD209), which sets CQ, CQ, and Q[35:0] output impedance to 48 Ω (0.2 × 240 Ω). Alternatively, tying ZQ directly to VDDQ enables minimum-impedance mode (~30 Ω). ZQ must never be left floating or tied to GND, as this disables calibration and risks signal integrity failure at 450 MHz.

CY7C1565KV18-450BZI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
450 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1565KV18-450BZI FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1565KV18-450BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1565KV18-450BZI reliable?

The price and inventory of CY7C1565KV18-450BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1565KV18-450BZI is usually 5 days.

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CY7C1565KV18-450BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1565KV18-450BZI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1565KV18-450BZI?

For technical support, including CY7C1565KV18-450BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1565KV18-450BZI requirements.

6.How does Aetrix verify that CY7C1565KV18-450BZI is sourced from the original manufacturer or authorized distributors?

All CY7C1565KV18-450BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1565KV18-450BZI meets industry standards.

7.What is the process for return or replacement of CY7C1565KV18-450BZI?

All CY7C1565KV18-450BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1565KV18-450BZI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1565KV18-450BZI part is unused and in its original packaging.

Return procedure for CY7C1565KV18-450BZI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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