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Infineon Technologies CY7C1565KV18-500BZXC

Part No.:
CY7C1565KV18-500BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1565KV18-500BZXC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,086

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Product details

Overview

CY7C1565KV18-500BZXC from Cypress Semiconductor is a 72-Mbit QDR® II+ SRAM with 2M × 36 organization, 500 MHz maximum clock frequency, 2.5-cycle read latency (DOFF = HIGH), and dual DDR interfaces on independent read/write ports. It delivers 1100 MT/s data transfer rate, operates at 1.8 V core / 1.4–1.8 V I/O, and is packaged in a 165-ball FBGA (13 × 15 × 1.4 mm) for high-bandwidth networking buffer applications.

For engineers reviewing the CY7C1565KV18-500BZXC datasheet, CY7C1565KV18-500BZXC pinout, CY7C1565KV18-500BZXC application, or CY7C1565KV18-500BZXC equivalent, key selection criteria include burst depth (four 36-bit words), echo clock support (CQ/CQ), QVLD timing indicator, PLL-based data alignment, and byte-write select (BWS[3:0]) granularity for partial writes.

Technical Context

The CY7C1565KV18-500BZXC implements a true quad data rate architecture with physically separate read and write data paths-eliminating bus turnaround overhead. Its internal 512K × 36 × 4 array structure enables concurrent read/write operations on the same address bus, latched alternately on rising edges of K and K clocks.

It integrates a phase-locked loop (PLL) for precise output data placement relative to echo clocks CQ/CQ, supports programmable output impedance via ZQ calibration, and provides synchronous self-timed writes with full data coherency. The DOFF pin selects between QDR II+ (2.5-cycle latency, up to 550 MHz) and QDR I (1-cycle latency, ≤167 MHz) operation modes.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density72 Mbit (2M × 36)
Max Clock Frequency500 MHz - defines system bandwidth ceiling and timing margin constraints
Read Latency2.5 cycles (DOFF = HIGH) - determines minimum pipeline depth for read-response synchronization
Data Rate1100 MT/s - achieved via DDR on both ports, enabling 8.8 Gbps aggregate throughput
Supply VoltagesVDD = 1.8 V ±0.1 V; VDDQ = 1.4–1.8 V - supports mixed-voltage interface design with HSTL-compatible I/O
Burst LengthFour 36-bit words per access - reduces address bus toggling and simplifies controller address sequencing
Package165-ball FBGA (13 × 15 × 1.4 mm) - matches high-density PCB layouts for switch/router line cards

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, with 0.8 mm ball pitch.

Pin/TerminalCircuit RoleDesign Meaning
K, KInput clocksRising edges control all synchronous inputs/outputs; K drives read port, K drives write port
CQ, CQEcho clocksFree-running, edge-aligned outputs synchronized to K/K - simplify high-speed data capture in FPGA/ASIC receivers
Q[35:0]Read data outputsDDR outputs driven on K/K rising edges; tri-stated when RPS is deasserted
D[35:0]Write data inputsDDR inputs sampled on K/K rising edges; ignored unless WPS is active
RPS, WPSPort selectsActive-low synchronous enables - allow independent depth expansion without external gating logic
BWS[3:0]Byte write selectsPer-byte write enable (BWS0=D[8:0], BWS1=D[17:9], etc.) - enables partial-word updates without read-modify-write
QVLDValid data indicatorEdge-aligned with CQ/CQ - signals valid Q[35:0] data for reliable latch timing in receiver logic
ZQImpedance calibrationConnects to external resistor to ground - tunes CQ/CQ/Q[35:0] output drive strength to match 50 Ω trace impedance
DOFFPLL disableActive-low mode selector - disables PLL to enter QDR I mode (1-cycle latency, lower max frequency)

Key Features

FeatureDesign Value
Independent read/write portsEliminates data bus turnaround delay and contention - enables deterministic full-duplex memory access in packet buffering
Four-word burst architectureReduces address bus frequency by 4× versus single-word access - lowers controller pin count and routing complexity
Synchronous self-timed writesGuarantees write completion within fixed clock cycles - removes need for external write acknowledge handshake
HSTL I/O with variable driveSupports 1.4 V or 1.8 V VDDQ and impedance tuning via ZQ - ensures signal integrity across varied board stackups and trace lengths
JTAG 1149.1 test accessEnables boundary scan testing of interconnects in dense FBGA layouts - critical for production test coverage in telecom modules

Applications

High-Speed Packet BufferingNetwork Switch Fabric Memory

Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/3 switches before forwarding decisions.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as a non-blocking, low-latency first-in-first-out (FIFO) buffer with concurrent read/write capability.

Use Value: 2.5-cycle read latency and 1100 MT/s throughput enable sub-10 ns average access time for 64-byte packets, supporting 100 Gbps line-rate processing.

Use Scenario: Serving as distributed lookup table memory in multi-stage switch fabrics requiring simultaneous address translation and statistics update.

IC Role / Device Role / Timing Role: Synchronous pipelined memory providing atomic read-modify-write for TCAM assist functions and counter updates.

Use Value: Independent RPS/WPS and BWS[3:0] allow concurrent header lookup (read) and counter increment (write) without bus arbitration delay.

Telecom Line Card BufferingBaseband Processing Memory

Use Scenario: Temporarily storing framed TDM or CPRI data streams between framer and DSP subsystems in wireless base stations.

IC Role / Device Role / Timing Role: Burst-mode SRAM interfacing directly with SerDes PHYs via echo-clocked (CQ/CQ) data capture.

Use Value: CQ/CQ alignment and QVLD signaling eliminate setup/hold uncertainty - enabling reliable sampling at 500 MHz clock rates without dynamic deskew.

Use Scenario: Acting as shared instruction/data memory between multiple DSP cores in LTE/5G baseband units.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency memory node supporting parallel fetch-execution pipelines with deterministic latency.

Use Value: Four-word burst and DDR I/O deliver 8.8 Gbps bandwidth - sufficient to feed dual 256-bit SIMD engines operating at 2 GHz without stalling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II+ SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T3615L5PF550 MHz max clock; 2M × 36; no DOFF pin - fixed 2.5-cycle latency only; lacks ZQ calibrationRequires external impedance matching; less flexible for mixed-voltage designsPreferred where highest speed is mandatory and board-level termination is already optimized
ISSI IS61WV102436B100 MHz max clock; asynchronous interface; no echo clocks or QVLD; 1M × 36 densityLacks concurrent read/write; unsuitable for real-time packet bufferingOnly viable for cost-sensitive, low-bandwidth control-plane memory where latency is non-critical

Compared with IDT72T3615L5PF and IS61WV102436B, the CY7C1565KV18-500BZXC uniquely balances 500 MHz operation, programmable latency (via DOFF), and on-die impedance tuning - making it the only option among the three that supports both high-speed data plane buffering and robust signal integrity across varying PCB environments.

Availability

CY7C1565KV18-500BZXC is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, and telecom line card buffering requiring stable component supply and long-term industrial availability.

Supply support for CY7C1565KV18-500BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

The CY7C1565KV18 belongs to Cypress's QDR® II+ SRAM product line, engineered specifically for deterministic, low-latency, full-duplex memory access in packet-switched infrastructure - targeting wireline and wireless base station applications demanding >10 Gbps sustained throughput.

FAQ

What is the function of the DOFF pin on CY7C1565KV18-500BZXC?

The DOFF pin controls the internal PLL: when asserted LOW, it disables the PLL and forces the device into QDR I mode with 1-cycle read latency and reduced maximum frequency (≤167 MHz). When tied HIGH (e.g., via 10 kΩ pull-up), the PLL is active, enabling QDR II+ mode with 2.5-cycle latency and full 500 MHz operation. This pin allows hardware-selectable latency/performance trade-offs without firmware changes.

How does the ZQ pin affect signal integrity in high-speed designs?

The ZQ pin connects to an external precision resistor (typically 50 Ω to ground) to calibrate the output driver impedance of Q[35:0], CQ, and CQ pins to 0.2 × RQ (i.e., ~10 Ω). This matches standard 50 Ω transmission lines, minimizing reflections and ensuring clean eye diagrams at 500 MHz. Leaving ZQ unconnected or tying it to GND violates specifications and causes unpredictable drive strength.

Can CY7C1565KV18-500BZXC perform simultaneous read and write to the same memory location?

Yes - the device guarantees full data coherency during concurrent access: if a write to an address occurs in the same cycle as a read from that same address, the read returns the newly written data. This behavior is ensured by internal pipelining and synchronous self-timed write circuitry, eliminating the need for external arbitration logic in applications like real-time statistics counters.

What is the role of the QVLD signal in system timing validation?

QVLD is a synchronous, edge-aligned output that pulses high exactly when valid data appears on Q[35:0], synchronized to CQ/CQ edges. It serves as a hardware-valid strobe for FPGA/ASIC input registers - replacing complex timing margin calculations with a deterministic capture enable, especially critical when operating near the 500 MHz limit where setup/hold margins shrink below 100 ps.

CY7C1565KV18-500BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
500 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1565KV18-500BZXC FAQ

1.How can I place an order for CY7C1565KV18-500BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1565KV18-500BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1565KV18-500BZXC reliable?

The price and inventory of CY7C1565KV18-500BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1565KV18-500BZXC is usually 5 days.

3.What payment methods are accepted for CY7C1565KV18-500BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1565KV18-500BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1565KV18-500BZXC?

CY7C1565KV18-500BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1565KV18-500BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1565KV18-500BZXC?

For technical support, including CY7C1565KV18-500BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1565KV18-500BZXC requirements.

6.How does Aetrix verify that CY7C1565KV18-500BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1565KV18-500BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1565KV18-500BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1565KV18-500BZXC?

All CY7C1565KV18-500BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1565KV18-500BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1565KV18-500BZXC part is unused and in its original packaging.

Return procedure for CY7C1565KV18-500BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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