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Infineon Technologies CY7C1565KV18-550BZXC

Part No.:
CY7C1565KV18-550BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1565KV18-550BZXC.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,932

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Product details

Overview

CY7C1565KV18-550BZXC from Cypress Semiconductor is a 72-Mbit QDR® II+ SRAM with 2M × 36 organization, 550-MHz clock frequency, 2.5-cycle read latency, and separate read/write DDR ports. It delivers 1100-MHz data transfer on both ports using K/K input clocks and echo clocks CQ/CQ, enabling concurrent high-bandwidth memory access in network packet buffers and switch fabric controllers.

For engineers reviewing the CY7C1565KV18-550BZXC datasheet, CY7C1565KV18-550BZXC pinout, CY7C1565KV18-550BZXC application, or CY7C1565KV18-550BZXC equivalent, key selection criteria include its 1.8-V core / 1.4–1.8-V I/O supply range, JTAG 1149.1 compliance, PLL-based timing control, and DOFF-pin-selectable QDR I (1-cycle) vs. QDR II+ (2.5-cycle) latency modes.

Technical Context

The CY7C1565KV18-550BZXC implements a true quad data rate architecture with physically independent read and write data paths-no bus turnaround required. Its four-word burst transfers 144 bits per access cycle across two rising edges of K and K, achieving full data coherency via synchronous pipelined addressing and self-timed writes.

Internal operation relies on dual-edge-synchronized registers: all inputs (D[35:0], RPS, WPS, BWS[3:0], A[18:0]) are latched on K/K rising edges; all outputs (Q[35:0], QVLD, CQ, CQ) are edge-aligned to those same clocks. The integrated PLL ensures precise data placement, while ZQ enables dynamic output impedance tuning to match system trace impedance.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (2M × 36), supporting 144-bit-wide burst transfers per access
Max Clock Frequency 550 MHz - enables 1100 MT/s DDR throughput on both read and write ports
Read Latency 2.5 cycles (DOFF = HIGH); reduces to 1 cycle (QDR I mode) when DOFF = LOW
Supply Voltages VDD = 1.8 V ±0.1 V; VDDQ = 1.4 V to 1.8 V - supports mixed-voltage system interfacing
Package 165-ball FBGA (13 × 15 × 1.4 mm) - fine-pitch layout optimized for high-speed signal integrity
I/O Standard HSTL Class I inputs / variable-drive HSTL outputs - meets JEDEC SSTL-18 compatibility requirements
Timing Control Integrated PLL + echo clocks (CQ/CQ) - eliminates external timing compensation circuitry

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, with 0.8-mm ball pitch.

Pin/Terminal Circuit Role Design Meaning
K / K Input clocks Rising edges latch all synchronous inputs and time Q[35:0] output transitions; K drives read port, K drives write port
CQ / CQ Echo clocks Free-running, phase-aligned copies of K/K - simplify high-speed data capture at FPGA/ASIC receivers
RPS / WPS Port select controls Active-LOW signals enabling independent read/write port activation without bus contention
BWS[3:0] Byte write selects Four independent active-LOW signals controlling 9-bit byte lanes (D[8:0] to D[35:27]) for partial-word writes
QVLD Data validity indicator Edge-aligned with CQ/CQ - asserts one cycle before first valid Q[35:0] word, enabling reliable DDR sampling
DOFF PLL disable input Active-LOW pin switching between QDR II+ (2.5-cycle latency, up to 550 MHz) and QDR I (1-cycle latency, ≤167 MHz)
ZQ Impedance calibration Connects to external resistor to ground to tune CQ/CQ/Q[35:0] output drive strength to 0.2 × RQ

Key Features

Feature Design Value
Separate read/write DDR ports Eliminates data bus turnaround delays and contention, enabling deterministic full-duplex memory access
Four-word burst architecture Reduces address bus toggling by 75% versus single-word access - lowers EMI and routing complexity
Synchronous self-timed writes Removes external write-strobe timing constraints; internal logic guarantees write completion within fixed clock cycles
JTAG 1149.1 test access port Enables boundary scan testing, in-system programming, and production-level fault isolation without additional test hardware
Programmable output impedance (ZQ) Allows real-time matching to PCB trace impedance - improves signal integrity without board-level termination resistors

Applications

Network Packet Buffering Switch Fabric Controller Memory

Use Scenario: Storing ingress/egress packet headers and metadata in multi-gigabit Ethernet switches.

IC Role / Device Role / Timing Role: High-throughput, low-latency shared memory buffer with simultaneous read (forwarding decision) and write (packet arrival) operations.

Use Value: 1100-MT/s DDR bandwidth and 2.5-cycle latency enable line-rate processing of 10G/25G packets without pipeline stalls.

Use Scenario: Holding forwarding tables and queue state in modular chassis-based routers.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as central lookup engine memory with deterministic access timing for parallel table searches.

Use Value: Independent RPS/WPS control allows concurrent table updates and lookups, sustaining >90% memory utilization under bursty traffic loads.

Telecom Baseband Processing High-Speed Test Equipment FIFO

Use Scenario: Interfacing between DSP cores and RF front-end in 4G/LTE base stations.

IC Role / Device Role / Timing Role: Synchronization buffer decoupling variable-rate processing stages while preserving sample timing integrity.

Use Value: Echo clocks CQ/CQ provide receiver-side timing references aligned to source clock edges - eliminating skew-induced bit errors.

Use Scenario: Capturing high-speed digital waveforms in automated test systems with real-time pattern analysis.

IC Role / Device Role / Timing Role: Deep, low-latency capture memory supporting continuous streaming at >500 MHz effective sample rate.

Use Value: DOFF-pin-selectable latency mode allows trade-off between maximum speed (2.5-cycle) and minimal jitter (1-cycle QDR I) during calibration phases.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T36150L10BG 72-Mbit QDR II+, 1000 MHz interface (500 MHz clock), 2.5-cycle latency, 1.5-V VDDQ only Lacks DOFF-selectable QDR I mode; requires stricter 1.5-V I/O supply; no ZQ impedance tuning Preferred where higher interface speed is critical and system I/O voltage is fixed at 1.5 V
AS7C362000B-15PCCN 72-Mbit sync SRAM, single-port, 15 ns access, 3.3-V core/I/O, no DDR or echo clocks No concurrent read/write; no burst mode; no PLL or timing assist features Suitable only for cost-sensitive, non-real-time buffering where bandwidth < 200 MB/s suffices

Compared with IDT72T36150L10BG and AS7C362000B-15PCCN, CY7C1565KV18-550BZXC uniquely supports flexible I/O voltage (1.4–1.8 V), on-die impedance tuning (ZQ), and runtime latency mode switching (via DOFF), making it optimal for adaptive, high-integrity telecom and test equipment designs.

Availability

CY7C1565KV18-550BZXC is available at Aetrix Electronics and suitable for network packet buffering, switch fabric controller memory, and telecom baseband processing requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.

Supply support for CY7C1565KV18-550BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and system-level timing robustness.

The CY7C1565KV18 belongs to Cypress's QDR® II+ SRAM product line, engineered specifically for deterministic, full-duplex memory access in multi-gigabit packet processing and real-time signal conditioning systems.

FAQ

What is the function of the DOFF pin on CY7C1565KV18-550BZXC?

The DOFF pin is an active-LOW PLL disable input. When pulled LOW, it disables the internal PLL and forces the device into QDR I mode with 1-cycle read latency and maximum operating frequency of 167 MHz. When held HIGH (typically via 10-kΩ pull-up), the device operates in QDR II+ mode at up to 550 MHz with 2.5-cycle latency. This pin enables runtime mode selection without changing clocking infrastructure.

How does the ZQ pin affect signal integrity in high-speed designs?

The ZQ pin connects to an external resistor to ground (RQ) to calibrate the output driver impedance of Q[35:0], CQ, and CQ pins to 0.2 × RQ. This dynamic impedance matching minimizes reflections on high-speed data and echo clock lines, reducing eye closure and jitter without requiring discrete series termination resistors on the PCB.

Can CY7C1565KV18-550BZXC support partial-word writes, and how is this implemented?

Yes - it supports byte-level writes via four active-LOW byte write select signals: BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18], and BWS3 controls D[35:27]. Each BWS signal gates its corresponding 9-bit lane during write operations; deselected bytes retain prior values, enabling efficient update of metadata or control fields without full-word overwrites.

What role do CQ and CQ echo clocks play in system timing design?

CQ and CQ are free-running, phase-aligned copies of the K and K input clocks, respectively. They provide receiver-side timing references that track source-clock jitter and skew, allowing FPGA or ASIC capture logic to sample Q[35:0] data with relaxed setup/hold margins. Their presence eliminates need for complex delay-locked loops or manual deskew circuitry in high-speed interfaces.

CY7C1565KV18-550BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
550 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1565KV18-550BZXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1565KV18-550BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1565KV18-550BZXC reliable?

The price and inventory of CY7C1565KV18-550BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1565KV18-550BZXC is usually 5 days.

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CY7C1565KV18-550BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1565KV18-550BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1565KV18-550BZXC?

For technical support, including CY7C1565KV18-550BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1565KV18-550BZXC requirements.

6.How does Aetrix verify that CY7C1565KV18-550BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1565KV18-550BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1565KV18-550BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1565KV18-550BZXC?

All CY7C1565KV18-550BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1565KV18-550BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1565KV18-550BZXC part is unused and in its original packaging.

Return procedure for CY7C1565KV18-550BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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