Infineon Technologies CY7C1568KV18-400BZXC
- Part No.:
- CY7C1568KV18-400BZXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1568KV18-400BZXC.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1568KV18 from Cypress Semiconductor is a 72-Mbit (4M × 18) DDR II+ synchronous SRAM with two-word burst architecture, 2.5-cycle read latency at 550 MHz, HSTL I/O interface, and integrated PLL for precise DDR timing. It operates with core VDD = 1.8 V ± 0.1 V and I/O VDDQ = 1.4–1.8 V, and is packaged in a 165-ball FBGA (13 × 15 × 1.4 mm). It serves as high-bandwidth buffer memory in network packet processors and FPGA-based data acquisition systems.
For engineers reviewing the CY7C1568KV18 datasheet, CY7C1568KV18 pinout, CY7C1568KV18 application, or CY7C1568KV18 equivalent, key selection criteria include DDR II+ burst timing compliance, echo clock (CQ/CQ) synchronization capability, QVLD data validity signaling, and DOFF-pin-selectable 1-cycle vs. 2.5-cycle latency modes.
Technical Context
This SRAM implements a synchronous pipelined architecture where all address, control, and data transfers are edge-triggered on rising edges of complementary clocks K and K. Read and write operations initiate on K's rising edge, while data is registered and driven on both K and K edges-enabling true double-data-rate throughput up to 1100 MT/s.
The device integrates an on-chip PLL for accurate data placement relative to echo clocks CQ/CQ, supports byte-write masking via BWS[1:0], and uses QVLD to indicate valid output data aligned with CQ/CQ edges. Its internal organization comprises two 2M × 18 arrays, enabling depth-expansion without wait states.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density & Organization | 72 Mbit / 4M × 18 - provides 72-bit-wide burst access per cycle, ideal for 64-bit bus alignment with spare bits for ECC or parity. |
| Max Clock Frequency | 550 MHz - enables 1100 MT/s effective data rate; real-world bandwidth exceeds 19 GB/s with full bus utilization. |
| Read Latency | 2.5 cycles (DOFF = HIGH) - deterministic timing for pipeline-synchronized systems; reduces controller complexity vs. variable-latency DRAM. |
| I/O Voltage Range | VDDQ = 1.4 V to 1.8 V - supports interoperability with both 1.5 V and 1.8 V logic families without level shifters. |
| Output Interface | HSTL Class I - ensures impedance-matched, low-noise signaling at >500 MHz; ZQ pin enables dynamic output drive calibration. |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - industry-standard footprint compatible with automated PCB assembly and thermal management for high-power memory subsystems. |
| Timing Reference | Echo clocks CQ/CQ - eliminate board-level skew between data and capture clock, removing need for per-device delay tuning in multi-SRAM systems. |
Pinout & Package
Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant, Pb-free option available.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[17:0] | Synchronous bidirectional data bus | 18-bit DDR data path; inputs sampled on K/K rising edges during writes; outputs driven on K/K rising edges during reads with QVLD alignment. |
| K / K | Differential input clocks | Complementary clocks define all synchronous timing; K initiates transactions; both clocks register inputs/outputs-no internal clock doubling required. |
| CQ / CQ | Output echo clocks | Free-running, phase-aligned copies of K/K used by external logic to capture DQ data without routing clock skew compensation. |
| QVLD | Valid data indicator | Active-HIGH signal edge-aligned with CQ/CQ; asserts only when DQ[17:0] carries valid read data-enables reliable latch enable in high-speed receivers. |
| DOFF | PLL disable control | Active-LOW pin that disables internal PLL; forces DDR I mode (1-cycle latency) for backward compatibility or lower-frequency operation up to 167 MHz. |
| ZQ | Output impedance calibration reference | Connects to external resistor to ground (RQ); calibrates CQ/CQ/DQ output drive strength to 0.2 × RQ-ensures consistent signal integrity across voltage/temperature. |
| LD | Load strobe | Sampled on K rising edge; defines start of bus cycle; must be LOW for valid R/W and address sampling-enables burst-addressing without external counters. |
| BWS[1:0] | Byte write select | Active-LOW signals controlling DQ[8:0] (BWS0) and DQ[17:9] (BWS1); allows partial-word writes without read-modify-write overhead. |
Key Features
| Feature | Design Value |
|---|---|
| Two-word burst architecture | Reduces address bus toggling frequency by 50% versus single-word SRAMs-lowers EMI and simplifies controller address generation logic. |
| Integrated PLL with echo clocks | Eliminates need for external clock forwarding ICs; CQ/CQ provide deterministic, low-jitter timing references for data capture at 550 MHz. |
| QVLD data validity indicator | Removes ambiguity in DDR data sampling windows-external logic uses QVLD instead of clock-phase guessing to trigger latches. |
| Programmable 1-cycle / 2.5-cycle latency | DOFF pin selects between DDR I (167 MHz max, 1-cycle) and DDR II+ (550 MHz max, 2.5-cycle) modes-supports legacy and performance-critical designs. |
| HSTL Class I I/O with ZQ calibration | Ensures <±10% output impedance tolerance over voltage/temperature-maintains signal integrity on long, high-density memory buses without external termination. |
Applications
| Network Packet Buffering | FPGA-Based Data Acquisition |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and metadata in 10G/25G Ethernet line cards before classification or forwarding. IC Role / Device Role / Timing Role: High-throughput, low-latency burst buffer interfacing directly to MAC-layer logic via DDR II+ bus. Use Value: 2.5-cycle latency and echo clocks enable deterministic 550 MHz read/write handshaking-eliminating FIFO depth uncertainty in real-time packet processing pipelines. |
Use Scenario: Capturing synchronized multi-channel ADC samples (e.g., 16-bit × 8 channels @ 100 MSPS) in test equipment or radar front ends. IC Role / Device Role / Timing Role: Synchronous burst memory staging raw sensor data prior to FFT or compression in FPGA fabric. Use Value: QVLD-synchronized output ensures zero-cycle misalignment between sample timestamp and data validity-critical for sub-nanosecond time-of-flight accuracy. |
| Telecom Baseband Processing | Industrial Motion Control Buffer |
|
Use Scenario: Holding interleaved IQ samples and channel coefficients in LTE/5G baseband units during OFDM symbol processing. IC Role / Device Role / Timing Role: DDR II+ SRAM acting as ping-pong buffer between DSP cores and RF transceivers with strict timing closure. Use Value: HSTL I/O + ZQ calibration maintains signal integrity across 16-layer backplanes-reducing bit error rates in multi-GHz digital IF interfaces. |
Use Scenario: Temporarily storing encoder position updates and servo command history in CNC controllers requiring microsecond-level jitter control. IC Role / Device Role / Timing Role: Deterministic-latency memory supporting closed-loop motion algorithms with hard real-time deadlines. Use Value: DOFF-selectable 1-cycle mode allows safe fallback to DDR I timing during firmware updates-preserving system responsiveness without hardware change. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C362000B-15JIN | 512K × 36 QDR-II SRAM, 350 MHz max, no echo clocks or QVLD; uses SSTL-18 I/O. | Lacks CQ/CQ and QVLD-requires external clock forwarding and data-valid logic; limited to ≤350 MHz systems. | Select when cost sensitivity outweighs timing determinism needs and system clock <350 MHz. |
| IS61WV102418BLL-10BLI | 1M × 18 asynchronous SRAM, 10 ns access, single-data-rate, 3.3 V core/I/O. | No DDR interface, no burst, no PLL-requires external address sequencing and lacks high-speed timing features. | Choose only for legacy designs where DDR complexity is prohibitive and bandwidth <1.5 GB/s suffices. |
Compared with AS7C362000B-15JIN and IS61WV102418BLL-10BLI, CY7C1568KV18 delivers 550 MHz DDR II+ operation with built-in echo clocks and QVLD-reducing external timing components and enabling deterministic sub-cycle data capture unattainable with QDR-II or async alternatives.
Availability
CY7C1568KV18 is available at Aetrix Electronics and suitable for network packet buffering, FPGA-based data acquisition, and telecom baseband processing requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.
Supply support for CY7C1568KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding embedded and communications applications.
The CY7C1568KV18 belongs to Cypress's DDR II+ SRAM product line, engineered specifically for deterministic, high-bandwidth memory interfacing in FPGA, ASIC, and network processor subsystems where timing predictability and signal integrity are critical.
FAQ
What is the function of the DOFF pin?
The DOFF pin controls the internal PLL: when asserted HIGH, the device operates in DDR II+ mode with 2.5-cycle read latency at up to 550 MHz; when pulled LOW, it disables the PLL and reverts to DDR I mode with 1-cycle latency and a maximum frequency of 167 MHz. This dual-mode capability supports both performance-critical and legacy-compatible system integration without hardware redesign.
How does the ZQ pin affect output drive strength?
The ZQ pin connects to an external resistor (RQ) tied to ground, enabling on-die calibration of CQ, CQ, and DQ output driver impedance to precisely 0.2 × RQ. This ensures consistent 25–35 Ω drive strength across voltage and temperature variations-critical for maintaining signal integrity on high-speed memory buses without discrete termination resistors.
Can CY7C1568KV18 be used in depth-expanded configurations?
Yes-the device supports seamless depth expansion using LD and R/W signals across multiple units. When one device completes a read, its outputs tristate automatically on the next K rising edge, allowing immediate access to the next device without wait states or external arbitration logic-enabling scalable memory capacity with fixed timing overhead.
What is the role of QVLD in system timing design?
QVLD is a synchronous, edge-aligned output that asserts HIGH only when DQ[17:0] carries valid read data-its timing is locked to CQ/CQ edges. System designers use QVLD as a direct latch-enable signal for downstream registers, eliminating setup/hold margin uncertainty and removing the need for manual clock-data phase adjustment in high-speed capture logic.
CY7C1568KV18-400BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II+
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1568KV18-400BZXC FAQ
1.How can I place an order for CY7C1568KV18-400BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1568KV18-400BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1568KV18-400BZXC reliable?
The price and inventory of CY7C1568KV18-400BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1568KV18-400BZXC is usually 5 days.
3.What payment methods are accepted for CY7C1568KV18-400BZXC?
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CY7C1568KV18-400BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1568KV18-400BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1568KV18-400BZXC?
For technical support, including CY7C1568KV18-400BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1568KV18-400BZXC requirements.
6.How does Aetrix verify that CY7C1568KV18-400BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1568KV18-400BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1568KV18-400BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1568KV18-400BZXC?
All CY7C1568KV18-400BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1568KV18-400BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1568KV18-400BZXC part is unused and in its original packaging.
Return procedure for CY7C1568KV18-400BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1568KV18-400BZXC Tags

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