Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY7C1568KV18-450BZXC

Part No.:
CY7C1568KV18-450BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1568KV18-450BZXC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:132

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C1568KV18 from Cypress Semiconductor is a 72-Mbit (4M × 18) synchronous DDR II+ SRAM with two-word burst architecture, 2.5-cycle read latency at 450 MHz, HSTL I/O interface, and 1.8 V core / 1.4–1.8 V I/O supply. It delivers 1100 MT/s data throughput via double-data-rate transfers synchronized to K/K clocks and supports echo-clock–based data capture in high-speed memory subsystems for networking line cards and packet buffer applications.

For engineers reviewing the CY7C1568KV18 datasheet, CY7C1568KV18 pinout, CY7C1568KV18 application, or CY7C1568KV18 equivalent, key selection criteria include DDR II+ timing compliance, 165-ball FBGA package compatibility, QVLD-synchronized output validity, DOFF-configurable latency mode (2.5-cycle vs. 1-cycle), and JTAG 1149.1 test access support for production validation.

Technical Context

This SRAM implements a pipelined synchronous architecture where address and control signals are registered on the rising edge of K, while data is sampled on both K and K edges. Internal organization comprises two 2M × 18 arrays, enabling concurrent access management and depth expansion without wait states.

The device integrates a PLL for precise data placement relative to echo clocks CQ/CQ, supports programmable output impedance via ZQ calibration, and provides QVLD as an edge-aligned strobe indicating valid DQ[17:0] output. DOFF pin selection determines whether operation follows DDR II+ (2.5-cycle latency, up to 550 MHz) or legacy DDR I (1-cycle latency, ≤167 MHz) timing.

Key Specifications

Parameter Value and Actual Design Meaning
Density 72 Mbit (4M × 18 configuration)
Max Clock Frequency 450 MHz - defines maximum sustained burst bandwidth of 1.62 GB/s (1100 MT/s × 18-bit bus)
Read Latency 2.5 clock cycles - enables deterministic timing margin for high-speed controller synchronization
Core Supply 1.8 V ± 0.1 V - requires low-noise regulation; decoupling critical for signal integrity
I/O Supply Range 1.4 V to 1.8 V - supports interoperability with 1.5 V and 1.8 V memory controllers
Interface Standard HSTL Class I inputs / variable-drive HSTL outputs - ensures impedance-matched signaling at >400 MHz
Package 165-ball FBGA (13 × 15 × 1.4 mm) - compatible with standard fine-pitch PCB assembly processes

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
DQ[17:0] Synchronous bidirectional data bus Transfers 18-bit words on both K and K rising edges; tristated automatically after deselect
K / K Differential clock inputs Rising edges latch all synchronous inputs and drive outputs; define DDR timing reference
CQ / CQ Output echo clocks Free-running, phase-aligned copies of K/K used by controller to capture DQ data without skew compensation
QVLD Valid data indicator Edge-aligned with CQ/CQ; asserts one cycle before first valid DQ word, confirms data readiness
DOFF PLL disable control Active-low input that switches device from DDR II+ (2.5-cycle) to DDR I (1-cycle) timing mode
ZQ Impedance calibration reference Connects to external resistor to ground to tune DQ/CQ output drive strength to system trace impedance

Key Features

Feature Design Value
Two-word burst architecture Reduces address bus toggling frequency by 50% versus single-word access, lowering EMI and controller overhead
Programmable read latency mode DOFF pin selects between 2.5-cycle (DDR II+) and 1-cycle (DDR I) latency - enables backward compatibility and timing margin tuning
Integrated echo clocks (CQ/CQ) Eliminates need for separate capture clocks per SRAM in multi-device systems, simplifying board layout and timing closure
JTAG 1149.1 test port Enables boundary scan testing, interconnect verification, and in-system programming during manufacturing and debug
HSTL I/O with variable drive Supports robust signal integrity at 450 MHz clock rates while allowing drive strength adjustment via ZQ calibration

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: High-throughput packet buffering in 10G/25G Ethernet switch ASIC interfaces requiring low-latency, burst-access memory.

IC Role / Device Role / Timing Role: Primary burst-access SRAM providing dual 18-bit word reads/writes synchronized to line-rate clocks.

Use Value: 2.5-cycle latency and echo-clock alignment enable deterministic 450 MHz controller timing without complex deskew circuitry.

Use Scenario: Control-plane memory in carrier-grade optical transport equipment handling OAM&P message queues and configuration tables.

IC Role / Device Role / Timing Role: Synchronous pipelined SRAM interfacing directly to FPGA-based traffic managers with HSTL-compatible I/O banks.

Use Value: JTAG 1149.1 support allows in-system boundary scan validation of dense memory routing on multilayer backplanes.

Depth-Expanded Memory Subsystem Real-Time Signal Processing Buffer

Use Scenario: Multi-chip memory bank built from parallel CY7C1568KV18 devices to achieve 36-bit or wider data paths for baseband processing.

IC Role / Device Role / Timing Role: Identical-function SRAM slave in depth-expanded configuration using shared K/K and independent LD/R/W per chip.

Use Value: Automatic tristate on deselect eliminates bus contention during chip-to-chip transitions, removing need for external bus buffers.

Use Scenario: Low-jitter data buffering in radar DSP modules where deterministic read latency is required for time-critical FFT windowing.

IC Role / Device Role / Timing Role: Burst-access SRAM delivering consecutive 18-bit samples to pipeline stages with sub-nanosecond QVLD-strobed validity.

Use Value: QVLD output aligned to CQ/CQ provides unambiguous data-valid window for sampling logic, reducing setup/hold uncertainty.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C362000B-15JIN 512K × 36 async SRAM, no DDR interface, 15 ns access, 3.3 V only Lacks echo clocks, burst capability, and DDR timing - suitable only for non-burst, lower-bandwidth control-plane storage Select only if system lacks DDR clock infrastructure and tolerates higher latency and lower bandwidth.
IS61WV102418BLL-10BLI 1M × 18 sync SRAM, 10 ns cycle time, LVCMOS I/O, no PLL or echo clocks No burst mode, no QVLD, no ZQ calibration - requires full address bus per access and manual timing margining Choose only for cost-sensitive, non-high-speed designs where 450 MHz DDR timing is unnecessary.

Compared with AS7C362000B-15JIN and IS61WV102418BLL-10BLI, CY7C1568KV18 uniquely delivers DDR II+-optimized bandwidth, echo-clock–assisted data capture, and configurable latency - making it irreplaceable in systems demanding >1 GB/s sustained throughput with deterministic timing.

Availability

CY7C1568KV18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, depth-expanded memory subsystems, and real-time signal processing buffers requiring stable component supply across extended production lifecycles.

Supply support for CY7C1568KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1568KV18 belongs to Cypress's QDR II+/DDR II+ SRAM product line, engineered specifically for high-bandwidth, low-latency memory subsystems in networking, telecom, and test equipment where burst access and precise DDR timing are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1568KV18?

The DOFF pin is an active-low input that disables the internal PLL. When asserted LOW, the device operates in DDR I mode with 1-cycle read latency and a maximum frequency of 167 MHz. When HIGH, it enables DDR II+ mode with 2.5-cycle latency and up to 550 MHz operation. Pull-up resistors ≤10 kΩ are recommended for normal DDR II+ use.

How does the ZQ pin affect output drive strength?

ZQ connects to an external resistor to ground to calibrate output driver impedance. The device sets CQ, CQ, and DQ output impedance to 0.2 × RQ, where RQ is the external resistor value. Connecting ZQ directly to VDDQ enables minimum impedance mode. ZQ must never be left floating or tied to GND, as this disables calibration and risks signal integrity failure.

Can CY7C1568KV18 be used without the PLL enabled?

Yes - asserting DOFF LOW disables the PLL and reverts timing to DDR I specification: 1-cycle read latency, maximum 167 MHz clock rate, and simplified timing relationships. However, echo clocks CQ/CQ remain functional, and QVLD retains its edge alignment. This mode is intended for compatibility testing or low-frequency fallback, not full performance operation.

What is the purpose of the QVLD signal?

QVLD is a synchronous output that indicates when DQ[17:0] data is valid and stable. It is edge-aligned with CQ and CQ, asserting one clock cycle before the first valid data word appears on DQ. This eliminates guesswork in controller sampling logic and replaces traditional tAC/tOH timing margins with a deterministic strobe-driven capture window.

CY7C1568KV18-450BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II+
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
450 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1568KV18-450BZXC FAQ

1.How can I place an order for CY7C1568KV18-450BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1568KV18-450BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1568KV18-450BZXC reliable?

The price and inventory of CY7C1568KV18-450BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1568KV18-450BZXC is usually 5 days.

3.What payment methods are accepted for CY7C1568KV18-450BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1568KV18-450BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1568KV18-450BZXC?

CY7C1568KV18-450BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1568KV18-450BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1568KV18-450BZXC?

For technical support, including CY7C1568KV18-450BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1568KV18-450BZXC requirements.

6.How does Aetrix verify that CY7C1568KV18-450BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1568KV18-450BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1568KV18-450BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1568KV18-450BZXC?

All CY7C1568KV18-450BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1568KV18-450BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1568KV18-450BZXC part is unused and in its original packaging.

Return procedure for CY7C1568KV18-450BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1568KV18-450BZXC Tags

  • CY7C1568KV18-450BZXC
  • CY7C1568KV18-450BZXC PDF
  • CY7C1568KV18-450BZXC Datasheet
  • CY7C1568KV18-450BZXC Specifications
  • CY7C1568KV18-450BZXC Images
  • Infineon Technologies
  • Infineon Technologies CY7C1568KV18-450BZXC
  • Buy CY7C1568KV18-450BZXC
  • CY7C1568KV18-450BZXC Price
  • CY7C1568KV18-450BZXC Distributor
  • CY7C1568KV18-450BZXC Supplier
  • CY7C1568KV18-450BZXC Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER