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Infineon Technologies CY7C1568KV18-450BZXI

Part No.:
CY7C1568KV18-450BZXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1568KV18-450BZXI.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,906

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Product details

Overview

CY7C1568KV18 from Cypress Semiconductor is a 72-Mbit (4M × 18) synchronous DDR II+ SRAM with two-word burst architecture, 2.5-cycle read latency at 450 MHz, HSTL I/O interface, and 165-ball FBGA (13 × 15 × 1.4 mm) package. It operates with core VDD = 1.8 V ± 0.1 V and I/O VDDQ = 1.4–1.8 V, and integrates echo clocks (CQ/CQ), QVLD data-valid indicator, and JTAG 1149.1 test port for high-speed memory subsystems in networking line cards.

For engineers reviewing the CY7C1568KV18 datasheet, CY7C1568KV18 pinout, CY7C1568KV18 application, or CY7C1568KV18 equivalent, this device supports precise DDR timing via dual K/K clocks, synchronous self-timed writes, programmable impedance matching via ZQ, and configurable latency (2.5-cycle DDR II+ or 1-cycle DDR I mode via DOFF pin).

Technical Context

The CY7C1568KV18 implements a pipelined synchronous SRAM core with DDR II+ architecture, using rising edges of complementary K and K clocks to latch addresses, register write data, and drive read data. All synchronous inputs (A, R/W, LD, BWS[1:0]) are registered on K's rising edge; data I/O (DQ[17:0]) is double-data-rate registered on both K and K edges.

It features an internal PLL for accurate data placement, echo clocks (CQ/CQ) synchronized to K for simplified high-speed data capture, and QVLD aligned to CQ/CQ edges to indicate valid output data. The DOFF pin selects between 2.5-cycle latency (DOFF = HIGH) and 1-cycle DDR I mode (DOFF = LOW), enabling interoperability across legacy and high-bandwidth systems.

Key Specifications

Parameter Value and Actual Design Meaning
Density & Organization 72 Mbit (4M × 18); enables compact high-bandwidth buffer storage without depth expansion
Max Clock Frequency 450 MHz (K/K); supports 900 MT/s effective data rate with DDR interface
Read Latency 2.5 clock cycles (DOFF = HIGH); ensures deterministic timing for pipeline-aligned memory access
Supply Voltages Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4–1.8 V; supports mixed-voltage system integration
I/O Standard HSTL Class I inputs / variable-drive HSTL outputs; matches FPGA/ASIC memory controllers with controlled impedance
Package 165-ball FBGA (13 × 15 × 1.4 mm); fine-pitch footprint optimized for high-density PCB routing
Special Functions Integrated PLL, echo clocks (CQ/CQ), QVLD, ZQ impedance calibration, JTAG 1149.1 TAP

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
DQ[17:0] Synchronous bidirectional data bus Transfers 18-bit words on both K and K rising edges; tristated automatically after deselect
K / K Complementary input clocks Define all synchronous timing; K latches control/address, both register data I/O
CQ / CQ Output echo clocks Free-running, K-synchronized clocks for source-synchronous data capture at receiver
QVLD Valid data indicator Asserted edge-aligned with CQ/CQ to signal when DQ[17:0] carries valid read data
DOFF PLL disable control Active-LOW pin selecting 2.5-cycle DDR II+ (HIGH) or 1-cycle DDR I (LOW) operation mode
ZQ Impedance calibration reference Connects to external resistor to ground to tune DQ/CQ output impedance to 0.2 × RQ
LD Load strobe Latches address and R/W on K rising edge; initiates each 2-word burst transaction
BWS[1:0] Byte write select Active-LOW signals controlling DQ[8:0] (BWS0) and DQ[17:9] (BWS1) during writes

Key Features

Feature Design Value
Two-word burst architecture Reduces address bus toggling by 50% versus single-word SRAMs, lowering system EMI and routing complexity
Programmable read latency (2.5 or 1 cycle) DOFF pin enables runtime selection between high-performance DDR II+ and backward-compatible DDR I timing
Source-synchronous echo clocks (CQ/CQ) Eliminates need for board-level trace length matching between clock and data lines in multi-SRAM systems
HSTL I/O with ZQ calibration Ensures consistent signal integrity across voltage/temperature/process corners without external termination resistors
JTAG 1149.1 boundary scan Enables in-system test and debug of interconnects without requiring dedicated test pads or fixtures

Applications

High-Speed Network Line Cards Telecom Baseband Processing

Use Scenario: Buffering packet headers and metadata in 10G/25G Ethernet switch fabric ASIC interfaces.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory for ingress/egress pipeline staging.

Use Value: 900 MT/s DDR throughput and 2.5-cycle latency enable real-time header parsing without pipeline stalls.

Use Scenario: Storing channelized frame buffers in LTE/5G remote radio units with FPGA-based digital front-end.

IC Role / Device Role / Timing Role: Synchronous burst SRAM interfacing directly to Xilinx Ultrascale+ memory-mapped AXI ports.

Use Value: HSTL I/O and echo clocks simplify timing closure at 450 MHz, reducing PCB layer count vs. parallel DDR3.

Test Equipment Memory Subsystems Radar Signal Processing Modules

Use Scenario: Capturing high-resolution waveform samples in automated test equipment with real-time pattern generation.

IC Role / Device Role / Timing Role: Dual-port-like burst memory accessed via K/K-controlled pipelined reads/writes.

Use Value: Synchronous self-timed writes and QVLD signaling ensure deterministic sample timestamp alignment within ±0.45 ns.

Use Scenario: Storing FFT intermediate results in airborne phased-array radar processors operating under wide temperature ranges.

IC Role / Device Role / Timing Role: Radiation-tolerant (neutron soft error immunity documented) burst SRAM for safety-critical compute paths.

Use Value: 1.8 V core + 1.4–1.8 V I/O allows direct interfacing to radiation-hardened FPGAs while minimizing power density.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C361024B-15JIN 4M × 18 QDR-II SRAM, 150 MHz max, SSTL-2 I/O, no PLL or echo clocks Lacks DDR II+ burst timing and source-synchronous capture; requires external clock forwarding Choose for cost-sensitive, lower-bandwidth systems where 300 MT/s suffices and layout simplicity outweighs latency needs
IS61WV102418BLL-10BLI 1M × 18 async SRAM, 10 ns access, CMOS I/O, no burst or DDR interface No clocked interface; incompatible with DDR timing models or echo-clock-based capture schemes Use only in legacy designs requiring pin-compatible replacement of older async SRAMs-not a functional substitute

Compared with AS7C361024B-15JIN and IS61WV102418BLL-10BLI, the CY7C1568KV18 uniquely delivers 900 MT/s DDR throughput with integrated echo clocks and programmable latency-enabling timing-critical, high-density memory subsystems that neither alternative can support.

Availability

CY7C1568KV18 is available at Aetrix Electronics and suitable for high-speed network line cards, telecom baseband processing, and test equipment memory subsystems requiring stable component supply, long-term lifecycle assurance, and guaranteed Pb-free sourcing.

Supply support for CY7C1568KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding embedded and communications applications, with focus on signal integrity, timing precision, and system-level integration.

The CY7C1568KV18 belongs to Cypress's DDR II+ SRAM product line, engineered specifically for bandwidth-constrained, low-latency memory buffering in networking, telecom, and test instrumentation where traditional DRAM lacks determinism and async SRAM lacks speed.

FAQ

What is the function of the DOFF pin on CY7C1568KV18?

The DOFF pin is an active-LOW PLL disable control. When asserted LOW, it disables the internal PLL and forces the device into DDR I mode with 1-cycle read latency and maximum 167 MHz operation. When held HIGH (e.g., via 10 kΩ pull-up), the PLL remains active, enabling full DDR II+ operation at up to 450 MHz with 2.5-cycle latency. This pin provides hardware-selectable timing modes without firmware intervention.

How does the ZQ pin calibrate output impedance?

The ZQ pin connects to an external resistor (RQ) tied to ground, enabling on-die calibration of DQ and CQ output driver impedance to 0.2 × RQ. This compensates for process, voltage, and temperature variations, ensuring consistent signal integrity without discrete termination. Direct connection to VDDQ enables minimum-impedance mode; floating or grounding ZQ is prohibited and may damage the device.

Can CY7C1568KV18 be used without the PLL enabled?

Yes - asserting DOFF LOW disables the PLL and reconfigures the device as a DDR I SRAM with 1-cycle read latency and reduced maximum frequency (167 MHz). In this mode, timing parameters shift to match JEDEC DDR I specifications, and echo clocks (CQ/CQ) remain functional but derive from K without PLL multiplication. Full DDR II+ features like 2.5-cycle latency and 450 MHz operation require DOFF = HIGH.

What is the role of QVLD in system timing design?

QVLD is a synchronous output signal edge-aligned with CQ and CQ, indicating when DQ[17:0] carries valid read data. It eliminates the need for fixed delay chains or complex timing margin calculations at the receiver, allowing FPGA or ASIC logic to sample data reliably on the next CQ edge. Its guaranteed setup/hold relationship to DQ simplifies high-speed capture and reduces timing closure effort in multi-SRAM systems.

CY7C1568KV18-450BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II+
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
450 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1568KV18-450BZXI FAQ

1.How can I place an order for CY7C1568KV18-450BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1568KV18-450BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1568KV18-450BZXI reliable?

The price and inventory of CY7C1568KV18-450BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1568KV18-450BZXI is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1568KV18-450BZXI transactions.

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CY7C1568KV18-450BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1568KV18-450BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1568KV18-450BZXI?

For technical support, including CY7C1568KV18-450BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1568KV18-450BZXI requirements.

6.How does Aetrix verify that CY7C1568KV18-450BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C1568KV18-450BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1568KV18-450BZXI meets industry standards.

7.What is the process for return or replacement of CY7C1568KV18-450BZXI?

All CY7C1568KV18-450BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1568KV18-450BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1568KV18-450BZXI part is unused and in its original packaging.

Return procedure for CY7C1568KV18-450BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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