Infineon Technologies CY7C1568KV18-500BZXI
- Part No.:
- CY7C1568KV18-500BZXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1568KV18-500BZXI.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1568KV18 from Cypress Semiconductor is a 72-Mbit (4M × 18) DDR II+ synchronous pipelined SRAM with two-word burst architecture, 2.5-cycle read latency at 550 MHz, HSTL I/O interface, and integrated PLL for precise DDR timing. It operates with core VDD = 1.8 V ± 0.1 V and I/O VDDQ = 1.4 V to 1.8 V, and is used in high-bandwidth networking line cards requiring deterministic low-latency memory access.
For engineers reviewing the CY7C1568KV18 datasheet, CY7C1568KV18 pinout, CY7C1568KV18 application, or CY7C1568KV18 equivalent, key selection considerations include DDR II+ burst timing alignment, echo clock (CQ/CQ)–driven data capture, QVLD-synchronized output validity, and DOFF-controlled latency mode switching between DDR I (1-cycle) and DDR II+ (2.5-cycle) operation.
Technical Context
The device implements a synchronous pipelined architecture where all address, control, and data transfers are edge-aligned to dual input clocks (K and K). Read and write operations initiate on the rising edge of K, with data latched on both K and K edges - enabling true double-data-rate throughput at 1100 MT/s while maintaining 550 MHz clock frequency.
Its internal organization comprises two 2M × 18 arrays, supporting two-word sequential bursts per access. The integrated PLL synchronizes echo clocks (CQ/CQ) to K, eliminating system-level skew compensation; QVLD provides edge-aligned validity indication referenced to CQ/CQ, and ZQ enables programmable output impedance matching to the data bus.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 72 Mbit (4M × 18), enabling compact high-bandwidth buffer storage without depth expansion |
| Max Clock Frequency | 550 MHz - supports 1100 MT/s DDR data rate with deterministic timing closure |
| Read Latency | 2.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW), allowing runtime latency mode selection |
| I/O Voltage | VDDQ = 1.4 V to 1.8 V - compatible with both 1.5 V and 1.8 V system I/O rails |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - optimized for high-density PCB layouts with thermal and signal integrity |
| Interface Standard | HSTL Class I inputs / variable-drive HSTL outputs - ensures clean signal integrity at >500 MHz |
| Timing Reference | Echo clocks CQ/CQ - eliminate board-level routing skew for reliable data capture |
Pinout & Package
Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[17:0] | Synchronous bidirectional data bus | Transfers 18-bit words on both K and K rising edges; tristated automatically after deselect |
| K / K | Dual differential input clocks | K initiates all transactions; both clocks drive input registers and output timing - no internal clock doubling |
| CQ / CQ | Output echo clocks | Free-running, phase-locked to K; provide system-level timing reference for data capture |
| QVLD | Valid data indicator | Asserted edge-aligned to CQ/CQ rising edges - signals when DQ[17:0] contains valid burst data |
| DOFF | PLL disable control | Active-low pin that switches device from DDR II+ (2.5-cycle) to DDR I (1-cycle) timing mode |
| ZQ | Impedance calibration input | Connects to external resistor to ground to tune output driver impedance to 0.2 × RQ |
| LD | Load strobe | Latches address and R/W on K rising edge; defines start of each 2-word burst transaction |
| BWS[1:0] | Byte write select | Active-low controls DQ[8:0] (BWS0) and DQ[17:9] (BWS1); enables partial-word writes without read-modify-write |
Key Features
| Feature | Design Value |
|---|---|
| Two-word burst architecture | Reduces address bus toggling by 50% versus single-word SRAMs - lowers system EMI and routing complexity |
| Programmable read latency (1 or 2.5 cycles) | DOFF pin enables dynamic mode switching - supports legacy DDR I timing or optimized DDR II+ performance |
| Integrated PLL with echo clocks (CQ/CQ) | Eliminates need for external delay-locked loops or board-level trace length matching for data capture |
| HSTL I/O with ZQ calibration | Ensures consistent signal integrity across voltage/temperature/process corners via on-die impedance tuning |
| JTAG 1149.1 test access port | Enables boundary scan testing and in-system diagnostics without additional test fixtures |
Applications
| High-Speed Network Line Cards | Telecom Baseband Processing |
|---|---|
|
Use Scenario: Buffering packet headers and metadata in 10G/25G Ethernet switch fabric ASIC interfaces. IC Role / Device Role / Timing Role: Low-latency, burst-mode SRAM acting as first-level packet descriptor cache with deterministic 2.5-cycle read response. Use Value: Enables full-line-rate forwarding without pipeline stalls by delivering two consecutive 18-bit descriptors per clock cycle at 550 MHz. |
Use Scenario: Storing channelized time-division multiplexed (TDM) frame buffers in wireless base station digital front-end. IC Role / Device Role / Timing Role: Synchronous DDR II+ memory providing aligned burst reads synchronized to framer clock domain via CQ/CQ echo clocks. Use Value: Eliminates inter-chip skew compensation logic and reduces FPGA pin count by using QVLD instead of strobe-based capture. |
| Test Equipment Pattern Memory | Industrial Real-Time Control Buffers |
|
Use Scenario: Storing stimulus/response vectors in automated test equipment (ATE) pattern generators operating at >500 MHz. IC Role / Device Role / Timing Role: High-reliability SRAM with JTAG boundary scan support for in-system verification and fault isolation. Use Value: Ensures vector integrity under thermal stress via 1.8 V core supply and built-in neutron soft error immunity. |
Use Scenario: Holding motion control trajectory points in servo drive microcontrollers with strict jitter constraints. IC Role / Device Role / Timing Role: Deterministic-latency memory accessed via synchronous LD/R/W protocol - immune to asynchronous interrupt latency jitter. Use Value: Guarantees sub-nanosecond timing repeatability for position update cycles critical to <1 µm motion accuracy. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C36256P-15JIN | Single-data-rate (SDR), 15 ns access, 3.3 V only, no echo clocks or QVLD | Limited to ≤133 MHz systems; requires external timing management and lacks burst efficiency | Select only if DDR timing complexity must be avoided and bandwidth demand is <1 Gbps |
| IS61WV102418BLL-10BLI | SDR, 10 ns access, 3.3 V/2.5 V, no PLL or DOFF mode switching | No latency flexibility or DDR interface - incompatible with DDR II+ controller timing requirements | Use only in legacy designs where existing SDR memory controller cannot be modified |
Compared with AS7C36256P-15JIN and IS61WV102418BLL-10BLI, CY7C1568KV18 delivers 2× bandwidth at same clock frequency via DDR, eliminates system-level skew tuning with CQ/CQ, and supports runtime latency adaptation - making it uniquely suited for new high-speed serial fabric designs.
Availability
CY7C1568KV18 is available at Aetrix Electronics and suitable for high-speed network line cards, telecom baseband processing, ATE pattern memory, and industrial real-time control buffers requiring stable component supply and long-term lifecycle assurance.
Supply support for CY7C1568KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
CY7C1568KV18 belongs to Cypress's QDR II+/DDR II+ SRAM product line, engineered specifically for deterministic, low-jitter, high-throughput buffering in serial fabric and packet-processing systems where timing predictability outweighs cost-per-bit optimization.
FAQ
What is the function of the DOFF pin on CY7C1568KV18?
The DOFF (DLL/PLL Off) pin is an active-low control that disables the internal PLL. When asserted LOW, the device reverts to DDR I timing with 1-cycle read latency and maximum 167 MHz operation. When HIGH, it enables DDR II+ mode with 2.5-cycle latency and up to 550 MHz clock frequency. Pull-up resistor (≤10 kΩ to VDDQ) is required for normal DDR II+ operation.
How does the QVLD signal improve system timing margin?
QVLD is a synchronous output that asserts edge-aligned with the rising edges of CQ and CQ, indicating precisely when DQ[17:0] carries valid data. Unlike asynchronous ready signals, QVLD eliminates setup/hold uncertainty at the receiver, allowing direct connection to FPGA input registers without additional timing constraints or deskew logic.
Can CY7C1568KV18 operate with VDDQ = 1.5 V?
Yes. The device supports VDDQ from 1.4 V to VDD (1.8 V), explicitly including 1.5 V operation. HSTL Class I input thresholds and variable-drive output buffers are fully characterized across this range, ensuring reliable signaling in mixed-voltage systems where 1.5 V I/O standards coexist with 1.8 V core logic.
What is the purpose of the ZQ pin and how should it be connected?
ZQ is an impedance calibration input tied to an external precision resistor (RQ) between ZQ and ground. The device uses this to tune its HSTL output drivers to 0.2 × RQ. For example, a 60 Ω resistor sets output impedance to 12 Ω. Alternatively, connecting ZQ directly to VDDQ enables minimum-impedance mode - but it must never be left floating or tied to GND.
CY7C1568KV18-500BZXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II+
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 500 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1568KV18-500BZXI FAQ
1.How can I place an order for CY7C1568KV18-500BZXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1568KV18-500BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of CY7C1568KV18-500BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1568KV18-500BZXI is usually 5 days.
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5.How can I obtain technical support or documentation for CY7C1568KV18-500BZXI?
For technical support, including CY7C1568KV18-500BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1568KV18-500BZXI requirements.
6.How does Aetrix verify that CY7C1568KV18-500BZXI is sourced from the original manufacturer or authorized distributors?
All CY7C1568KV18-500BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1568KV18-500BZXI meets industry standards.
7.What is the process for return or replacement of CY7C1568KV18-500BZXI?
All CY7C1568KV18-500BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1568KV18-500BZXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1568KV18-500BZXI part is unused and in its original packaging.
Return procedure for CY7C1568KV18-500BZXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1568KV18-500BZXI Tags

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