Infineon Technologies CY7C1568KV18-550BZXC
- Part No.:
- CY7C1568KV18-550BZXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1568KV18-550BZXC.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1568KV18 from Cypress Semiconductor is a 72-Mbit (4M × 18) synchronous pipelined DDR II+ SRAM with two-word burst architecture, 2.5-cycle read latency at 550 MHz, HSTL I/O interface, and integrated PLL for precise data placement. It operates with core VDD = 1.8 V ± 0.1 V and I/O VDDQ = 1.4–1.8 V, and is used in high-bandwidth networking line cards requiring deterministic low-latency memory access.
For engineers reviewing the CY7C1568KV18 datasheet, CY7C1568KV18 pinout, CY7C1568KV18 application, or CY7C1568KV18 equivalent, this page delivers verified technical context, validated pin functions, real-world timing behavior under DDR II+ and DDR I modes, and direct alternatives with documented functional trade-offs.
Technical Context
The CY7C1568KV18 implements a synchronous pipelined SRAM core with dual-edge DDR II+ interface: address and control inputs are registered on K rising edges only, while write data is latched on both K and K rising edges, and read data is driven synchronously on both K and K rising edges. Its internal organization comprises two 2M × 18 arrays enabling concurrent burst access.
It supports configurable latency via DOFF pin: when asserted HIGH, it enables 2.5-cycle read latency with PLL-locked echo clocks (CQ/CQ); when LOW, it reverts to 1-cycle DDR I mode up to 167 MHz. Echo clocks are free-running, edge-aligned with K/K, and tightly track output data timing to eliminate system-level capture skew.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 72 Mbit (4M × 18), enabling compact high-throughput buffer storage without depth expansion. |
| Max Clock Frequency | 550 MHz - supports 1100 MT/s effective data rate using double-data-rate transfers. |
| Read Latency | 2.5 clock cycles (DOFF = HIGH) - guarantees deterministic timing for pipeline-constrained systems. |
| I/O Voltage Range | VDDQ = 1.4 V to 1.8 V - interoperable with both 1.5 V and 1.8 V HSTL-18/15 systems. |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - optimized for high-density PCB layouts with controlled impedance routing. |
| Core Supply | VDD = 1.8 V ± 0.1 V - requires tight regulation to maintain SRAM stability and timing margins. |
| Output Timing Reference | CQ/CQ echo clocks - eliminate board-level data capture uncertainty by aligning QVLD and DQ transitions. |
Pinout & Package
Package: 165-ball fine-pitch BGA (13 mm × 15 mm × 1.4 mm), RoHS-compliant, with 0.8 mm ball pitch and standard JEDEC thermal pad layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[17:0] | Synchronous bidirectional data bus | Shares physical pins for input (write) and output (read); data valid aligned to CQ/CQ edges; tristated automatically on deselect. |
| K / K | Differential clock inputs | K captures address/control on rising edge only; K and K jointly register write data and drive read data - no internal clock doubling. |
| CQ / CQ | Output echo clocks | Free-running, PLL-synchronized copies of K/K; used by system logic to sample DQ and QVLD without phase margin loss. |
| QVLD | Valid data indicator | Asserted edge-aligned with CQ/CQ rising edges; signals that DQ[17:0] contains stable, valid read data. |
| DOFF | PLL enable/disable control | Active LOW - disables PLL to enter DDR I mode (1-cycle latency, ≤167 MHz); HIGH enables full DDR II+ operation. |
| LD | Load strobe | Sampled on K rising edge; initiates each burst transaction (address + R/W direction); defines start of 2-word sequence. |
| BWS[1:0] | Byte write select | Active LOW; BWS0 controls DQ[8:0], BWS1 controls DQ[17:9]; enables partial writes without read-modify-write overhead. |
Key Features
| Feature | Design Value |
|---|---|
| Two-word burst architecture | Reduces address bus toggling frequency by 50% versus single-word SRAMs - lowers EMI and simplifies controller logic. |
| Programmable impedance tuning (ZQ) | Enables dynamic output driver calibration to match trace impedance (via external RQ to GND), minimizing signal reflections. |
| Synchronous self-timed writes | Eliminates external write pulse timing constraints - controller needs only meet K/K setup/hold; internal logic handles write completion. |
| JTAG 1149.1 test access port | Supports boundary scan testing and in-system diagnostics without requiring additional test pads or probe points. |
| DDR II+ / DDR I mode selection | Single-pin (DOFF) hardware-selectable operation modes - allows reuse across legacy and next-gen designs with minimal board change. |
Applications
| Telecom Line Card Buffering | High-Speed Packet Switching |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and metadata in 10G/25G Ethernet switch ASIC interfaces. IC Role / Device Role / Timing Role: Low-latency, burst-access SRAM acting as first-level packet descriptor cache with deterministic 2.5-cycle read response. Use Value: Enables full-line-rate forwarding by eliminating pipeline stalls during header lookups - sustained 1100 MT/s throughput matches SerDes lane bandwidth. |
Use Scenario: Buffering flow-control credits and queue state in multi-port network processor interconnects. IC Role / Device Role / Timing Role: Synchronous burst SRAM providing atomic 2-word credit updates synchronized to fabric clock domain. Use Value: Prevents credit starvation through guaranteed sub-2ns data validity window (QVLD + CQ alignment), reducing fabric dead time. |
| Test Equipment Pattern Memory | Industrial Real-Time Control FIFO |
|
Use Scenario: Storing stimulus/response vectors in automated test equipment (ATE) pattern generators running at >500 MHz. IC Role / Device Role / Timing Role: Deterministic-access memory delivering consecutive 18-bit pattern words with zero wait states. Use Value: Maintains exact vector timing integrity across bursts - eliminates jitter-induced bit errors in high-speed digital I/O validation. |
Use Scenario: Interfacing motion controller FPGA to servo amplifier via time-critical position/velocity command FIFO. IC Role / Device Role / Timing Role: Synchronous burst SRAM buffering commands with hard real-time latency bound (≤1.82 ns per word at 550 MHz). Use Value: Guarantees jitter-free command delivery - prevents position overshoot caused by variable memory access delay in closed-loop systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C362000B-15TIN | 512K × 36 QDR-II SRAM, 350 MHz max, 1.8 V core/I/O, no echo clocks or DOFF mode switching. | Lacks DDR II+ burst flexibility and programmable latency; requires external capture logic for data valid window. | Select when cost sensitivity outweighs need for 550 MHz bandwidth and echo-clock simplification. |
| IS61WV102418BLL-10BLI | 1M × 18 asynchronous SRAM, 10 ns access, 3.3 V only, no DDR interface or burst capability. | Cannot support >100 MHz sustained throughput; introduces variable latency and requires external handshake logic. | Choose only for legacy 3.3 V systems where DDR timing complexity must be avoided entirely. |
Compared with AS7C362000B-15TIN and IS61WV102418BLL-10BLI, the CY7C1568KV18 uniquely delivers 550 MHz DDR II+ operation with echo clocks and selectable latency - enabling higher throughput and simpler system timing closure in new designs, while retaining backward compatibility via DOFF pin.
Availability
CY7C1568KV18 is available at Aetrix Electronics and suitable for telecom infrastructure, high-speed test equipment, industrial motion control, and network processor buffering requiring stable component supply and long-term lifecycle assurance.
Supply support for CY7C1568KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding embedded and communications applications.
The CY7C1568KV18 belongs to Cypress's QDR II+/DDR II+ SRAM product line, engineered specifically for deterministic, high-bandwidth buffering in packet-processing and real-time control systems where latency predictability and signal integrity are critical.
FAQ
What is the function of the DOFF pin, and how does it affect timing?
The DOFF pin is an active-low PLL enable control. When tied HIGH (≥0.7×VDDQ), the internal PLL is active, enabling 2.5-cycle read latency and full DDR II+ operation at up to 550 MHz. When pulled LOW, the PLL is disabled and the device reverts to DDR I mode with 1-cycle latency and maximum 167 MHz frequency. This hardware-selectable mode allows one design to serve both legacy and high-performance applications.
How do CQ and CQ echo clocks simplify system-level data capture?
CQ and CQ are free-running output clocks synchronized to K and K, respectively, and edge-aligned with valid DQ data and QVLD assertion. They eliminate the need for system logic to generate precise capture clocks - receivers use CQ/CQ directly to latch DQ[17:0], removing board trace length matching requirements and reducing timing closure effort by up to 300 ps margin.
Can CY7C1568KV18 operate with VDDQ = 1.5 V while maintaining 550 MHz performance?
Yes. The device supports VDDQ from 1.4 V to 1.8 V, and all AC specifications-including 550 MHz maximum frequency and 2.5-cycle latency-are guaranteed across this range per the datasheet's "Operating Range" table. At 1.5 V, HSTL-15-compatible signaling is achieved without derating, provided VDD remains at 1.8 V ± 0.1 V.
What is the role of the ZQ pin, and what happens if it is left unconnected?
ZQ is an impedance calibration input. It must be connected either to ground via an external precision resistor (RQ) to set output impedance to 0.2×RQ, or directly to VDDQ to enable minimum-impedance mode. Leaving ZQ floating or connecting it to GND without RQ violates Absolute Maximum Ratings and may cause output driver instability, signal integrity degradation, or premature device failure.
CY7C1568KV18-550BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II+
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 550 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1568KV18-550BZXC FAQ
1.How can I place an order for CY7C1568KV18-550BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1568KV18-550BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of CY7C1568KV18-550BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1568KV18-550BZXC is usually 5 days.
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Once your CY7C1568KV18-550BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1568KV18-550BZXC?
For technical support, including CY7C1568KV18-550BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1568KV18-550BZXC requirements.
6.How does Aetrix verify that CY7C1568KV18-550BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1568KV18-550BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1568KV18-550BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1568KV18-550BZXC?
All CY7C1568KV18-550BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1568KV18-550BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1568KV18-550BZXC part is unused and in its original packaging.
Return procedure for CY7C1568KV18-550BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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