Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY7C1568KV18-550BZXI

Part No.:
CY7C1568KV18-550BZXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1568KV18-550BZXI.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,378

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C1568KV18 from Cypress Semiconductor is a 72-Mbit (4M × 18) synchronous DDR II+ SRAM with two-word burst architecture, 2.5-cycle read latency at 550 MHz, HSTL I/O interface, and integrated PLL for precise data placement. It operates with core VDD = 1.8 V ± 0.1 V and I/O VDDQ = 1.4–1.8 V, and is packaged in a 165-ball FBGA (13 × 15 × 1.4 mm). It serves as high-bandwidth buffer memory in network packet processors and FPGA-based acceleration subsystems.

For engineers reviewing the CY7C1568KV18 datasheet, CY7C1568KV18 pinout, CY7C1568KV18 application, or CY7C1568KV18 equivalent, key selection criteria include DDR II+ timing compliance, echo clock (CQ/CQ) synchronization capability, QVLD data validity signaling, DOFF-configurable 1-cycle vs. 2.5-cycle latency mode, and HSTL-18-compatible drive strength.

Technical Context

This SRAM implements a pipelined synchronous architecture where all address, control, and data transfers are edge-aligned to dual-phase clocks K and K. Read and write operations initiate on the rising edge of K, while data is registered on both K and K edges-enabling true double-data-rate operation at 1100 MT/s with 550 MHz input clock.

The device integrates an on-chip PLL for accurate output data alignment to echo clocks CQ/CQ, supports programmable output impedance via ZQ calibration, and provides QVLD to indicate valid output data timing relative to CQ/CQ edges. DOFF pin selection determines whether the device runs in DDR II+ (2.5-cycle latency, up to 550 MHz) or legacy DDR I (1-cycle latency, ≤167 MHz) mode.

Key Specifications

Parameter Value and Actual Design Meaning
Density 72 Mbit (4M × 18 organization), enabling compact high-throughput buffering without depth expansion
Max Clock Frequency 550 MHz - supports 1100 MT/s DDR data rate for bandwidth-critical interconnect applications
Read Latency 2.5 cycles (DOFF = HIGH) - balances timing margin and throughput; configurable to 1 cycle (DOFF = LOW)
I/O Voltage VDDQ = 1.4 V to 1.8 V - compatible with both 1.5 V and 1.8 V system I/O rails
Interface Standard HSTL Class I inputs / variable-drive HSTL outputs - ensures signal integrity at >500 MHz
Package 165-ball FBGA (13 × 15 × 1.4 mm) - fine-pitch footprint optimized for high-density routing and thermal dissipation
Core Supply VDD = 1.8 V ± 0.1 V - low-voltage core reduces dynamic power in high-frequency operation

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
DQ[17:0] Synchronous bidirectional data bus Transfers 18-bit words on both K and K rising edges; tristated automatically after deselected reads
K / K Differential clock inputs Rising edges latch all synchronous inputs and drive outputs; define DDR timing reference
CQ / CQ Output echo clocks Free-running, phase-matched copies of K/K used for external data capture without skew compensation
QVLD Data validity indicator Asserted edge-aligned with CQ/CQ to signal when DQ[17:0] contains valid burst data
DOFF PLL enable/disable control LOW disables PLL and forces DDR I timing (1-cycle latency); HIGH enables DDR II+ mode (2.5-cycle latency)
ZQ Output impedance calibration input Connects to external resistor to ground to tune CQ/CQ/DQ output drive strength to 0.2 × RQ
LD Load strobe Sampled on K rising edge to capture address and R/W state; initiates each 2-word burst transaction
BWS[1:0] Byte write select Active-low signals controlling DQ[8:0] (BWS0) and DQ[17:9] (BWS1); enable partial-word writes

Key Features

Feature Design Value
Two-word burst architecture Reduces address bus toggling frequency by 50% versus single-word SRAMs, lowering EMI and routing complexity
Integrated PLL with echo clocks (CQ/CQ) Eliminates need for external delay-locked loops or board-level trace length matching for data capture
QVLD output signal Provides unambiguous, clock-synchronized indication of valid data window-critical for reliable high-speed sampling
Configurable latency via DOFF pin Enables hardware-selectable operation between DDR II+ (550 MHz, 2.5-cycle) and DDR I (167 MHz, 1-cycle) modes
HSTL I/O with ZQ calibration Ensures consistent signal integrity across voltage/temperature/process corners without manual termination design

Applications

Network Packet Buffering FPGA Co-Processor Cache

Use Scenario: Storing ingress/egress packet headers and metadata in 10G/25G line cards before classification or forwarding decisions.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency burst-access SRAM acting as first-level packet buffer with deterministic 2.5-cycle read response.

Use Value: Enables full-line-rate packet processing without stalls by delivering two 18-bit words per 550 MHz clock cycle via DDR interface.

Use Scenario: Serving as tightly coupled instruction/data cache between FPGA fabric and soft-core processor (e.g., MicroBlaze).

IC Role / Device Role / Timing Role: Synchronous pipelined memory providing burst-aligned instruction fetches and register-file-like write-back latency.

Use Value: Eliminates wait states during burst instruction fetches due to echo-clock–synchronized QVLD–driven data capture.

Telecom Baseband Processing High-Speed Test Equipment Memory

Use Scenario: Temporary storage of OFDM symbol buffers and channel estimation coefficients in LTE/5G baseband units.

IC Role / Device Role / Timing Role: DDR II+ SRAM interfacing directly to ASIC baseband engines requiring 1100 MT/s sustained throughput.

Use Value: Matches ASIC timing requirements using CQ/CQ echo clocks-no external clock forwarding or deskew circuitry needed.

Use Scenario: Pattern memory in automated test equipment (ATE) for high-speed digital IC validation at >500 MHz.

IC Role / Device Role / Timing Role: Deterministic-access memory supporting precise stimulus/response timing with QVLD-synchronized data validity windows.

Use Value: Guarantees sub-nanosecond data setup/hold margins via PLL-aligned echo clocks and calibrated HSTL I/O.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L10BG 36-Mbit (2M × 18), 1000 MHz DDR interface, no integrated PLL, uses external DLL for timing alignment Lacks echo clocks and QVLD; requires board-level clock forwarding and trace-length tuning Select when lower density suffices and system already implements DLL-based timing recovery
ISSI IS61WV102418B 18-Mbit (512K × 36), asynchronous SRAM, 166 MHz max access, no DDR or burst capability No DDR timing, no echo clocks, no QVLD-requires external handshake logic for burst coordination Choose only for cost-sensitive, non-burst, low-bandwidth control-plane buffering where latency predictability is secondary

Compared with IDT72T3615L10BG and IS61WV102418B, CY7C1568KV18 delivers 4× higher density and integrated timing infrastructure (PLL + CQ/CQ + QVLD), eliminating external timing components and enabling direct connection to high-speed ASIC/FPGA interfaces without layout-intensive skew management.

Availability

CY7C1568KV18 is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor caching, and telecom baseband processing requiring stable component supply, long-term lifecycle support, and guaranteed Pb-free manufacturing compliance.

Supply support for CY7C1568KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding embedded and communications systems, with emphasis on signal integrity, timing precision, and automotive-grade reliability.

CY7C1568KV18 belongs to Cypress's QDR II+/DDR II+ SRAM product line, engineered specifically for applications needing deterministic burst-access latency, echo-clock–synchronized data capture, and seamless integration with high-speed ASIC and FPGA memory controllers.

FAQ

What is the function of the DOFF pin, and how does it affect timing behavior?

The DOFF pin controls internal PLL operation: when asserted HIGH, the PLL is active and the device operates in DDR II+ mode with 2.5-cycle read latency at up to 550 MHz; when pulled LOW, the PLL is disabled and the device reverts to DDR I timing with 1-cycle latency and maximum 167 MHz clock rate. This allows hardware-selectable performance modes without firmware changes.

How do CQ and CQ echo clocks simplify system-level data capture?

CQ and CQ are free-running output clocks synchronized to the input K/K clocks, with fixed phase relationship to DQ[17:0] transitions. They eliminate the need for external delay-locked loops or PCB trace-length matching because receivers can use CQ/CQ edges-rather than K/K-to sample data, ensuring zero-skew capture across all data bits in high-speed systems.

Can CY7C1568KV18 operate with VDDQ = 1.5 V, and what is the impact on signal integrity?

Yes-CY7C1568KV18 supports VDDQ from 1.4 V to 1.8 V, including 1.5 V. At 1.5 V, HSTL output drive strength scales proportionally, maintaining signal integrity within HSTL Class I specifications. The ZQ calibration pin ensures output impedance remains matched to the system bus regardless of VDDQ level, preserving termination accuracy.

What is the role of the QVLD signal, and how is it timed relative to CQ/CQ?

QVLD is a synchronous output that asserts high exactly on the same edge of CQ and CQ that drives valid data onto DQ[17:0]. It remains asserted for the duration of valid data (one full CQ/CQ period), providing unambiguous, clock-synchronized indication of the data validity window-critical for reliable latching in high-speed receivers without additional timing margin analysis.

CY7C1568KV18-550BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II+
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
550 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1568KV18-550BZXI FAQ

1.How can I place an order for CY7C1568KV18-550BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1568KV18-550BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1568KV18-550BZXI reliable?

The price and inventory of CY7C1568KV18-550BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1568KV18-550BZXI is usually 5 days.

3.What payment methods are accepted for CY7C1568KV18-550BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1568KV18-550BZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1568KV18-550BZXI?

CY7C1568KV18-550BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1568KV18-550BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1568KV18-550BZXI?

For technical support, including CY7C1568KV18-550BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1568KV18-550BZXI requirements.

6.How does Aetrix verify that CY7C1568KV18-550BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C1568KV18-550BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1568KV18-550BZXI meets industry standards.

7.What is the process for return or replacement of CY7C1568KV18-550BZXI?

All CY7C1568KV18-550BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1568KV18-550BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1568KV18-550BZXI part is unused and in its original packaging.

Return procedure for CY7C1568KV18-550BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1568KV18-550BZXI Tags

  • CY7C1568KV18-550BZXI
  • CY7C1568KV18-550BZXI PDF
  • CY7C1568KV18-550BZXI Datasheet
  • CY7C1568KV18-550BZXI Specifications
  • CY7C1568KV18-550BZXI Images
  • Infineon Technologies
  • Infineon Technologies CY7C1568KV18-550BZXI
  • Buy CY7C1568KV18-550BZXI
  • CY7C1568KV18-550BZXI Price
  • CY7C1568KV18-550BZXI Distributor
  • CY7C1568KV18-550BZXI Supplier
  • CY7C1568KV18-550BZXI Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER