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Infineon Technologies CY7C1568XV18-600BZXC

Part No.:
CY7C1568XV18-600BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1568XV18-600BZXC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,536

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Product details

Overview

CY7C1568XV18-600BZXC from Cypress Semiconductor is a 72-Mbit (4M × 18) DDR II+ Xtreme SRAM with synchronous pipelined architecture, 2.5-cycle read latency, 600 MHz clock operation, and HSTL I/O interface. It delivers 1200 MT/s data throughput via double-data-rate transfers on rising edges of complementary K/K clocks, and is used in high-bandwidth networking buffers, packet processing ASIC/FPGA interfaces, and telecom line-card memory subsystems.

For engineers reviewing the CY7C1568XV18-600BZXC datasheet, CY7C1568XV18-600BZXC pinout, CY7C1568XV18-600BZXC application, or CY7C1568XV18-600BZXC equivalent, key selection criteria include DDR II+ burst timing compliance, echo-clock–synchronized data capture, QVLD-driven valid-data handshaking, and 1.8 V core / 1.5 V I/O supply compatibility.

Technical Context

This SRAM implements a two-word burst architecture where each address access retrieves two sequential 18-bit words on alternating K and K rising edges. Internal PLL ensures precise data placement relative to echo clocks CQ/CQ, enabling deterministic setup/hold margins at 600 MHz.

All synchronous inputs (A, R/W, LD, BWS[1:0], DOFF) are registered on K's rising edge; write data is latched on both K and K edges; read data is driven synchronously on both K and K edges with QVLD edge-aligned to CQ/CQ. ZQ pin enables dynamic output impedance tuning to match system bus termination.

Key Specifications

ParameterValue and Actual Design Meaning
Density & Organization72 Mbit, configured as 4M × 18 - supports burst-2 sequential word reads/writes per address cycle
Max Clock Frequency600 MHz - defines maximum sustained transaction rate for synchronous burst operations
Read Latency2.5 cycles (DOFF = HIGH) - determines minimum clock delay between LD assertion and first valid QVLD pulse
Data Rate1200 MT/s - achieved via DDR transfer on both K and K rising edges, doubling effective bandwidth
Core / I/O SupplyVDD = 1.8 V ± 0.1 V; VDDQ = 1.4–1.6 V - mandates separate low-noise power domains for logic and I/O
Output InterfaceHSTL Class I - ensures signal integrity at 600 MHz with controlled slew and on-die impedance matching via ZQ
Package165-ball FBGA (13 × 15 × 1.4 mm) - provides 0.8 mm ball pitch, thermal performance suitable for high-power memory subsystems

Pinout & Package

Delivered in a 165-ball fine-pitch ball grid array (FBGA) package measuring 13 mm × 15 mm × 1.4 mm, with 0.8 mm ball pitch and Pb-free finish. Pin assignments follow JEDEC MO-245AC standard layout.

Pin/TerminalCircuit RoleDesign Meaning
DQ[17:0]Synchronous bidirectional data busShares physical pins for input (write) and output (read); data sampled on K/K rising edges; tristated automatically on deselect
K / KComplementary input clocksRising edges control all synchronous timing; K initiates transactions, K captures second word and drives second data edge
CQ / CQOutput echo clocksFree-running, phase-matched to K/K; used by external logic to capture Q[17:0] without routing skew compensation
QVLDValid data indicatorAsserted edge-aligned with CQ/CQ; signals when DQ[17:0] carries stable, valid read data - eliminates need for fixed delay windows
DOFFPLL disable controlActive LOW; disables internal PLL to revert to DDR I mode (1-cycle latency, ≤167 MHz), enabling backward compatibility
ZQImpedance calibration referenceConnects to external 240 Ω resistor to GND; calibrates output driver strength to match 48 Ω system trace impedance (0.2 × RQ)
LDLoad strobeSampled on K rising edge; initiates address latch and transaction decode - defines start of burst cycle
BWS[1:0]Byte write selectActive LOW; BWS0 controls DQ[8:0], BWS1 controls DQ[17:9]; enables partial-word writes without read-modify-write overhead

Key Features

FeatureDesign Value
Two-word burst architectureReduces address bus toggling by 50% versus single-word SRAMs - lowers system EMI and simplifies address generation logic
Echo clock–driven data capture (CQ/CQ)Eliminates board-level clock-to-data skew management - enables reliable 1200 MT/s interfacing with FPGAs without custom delay tuning
QVLD-valid data handshakeRemoves dependency on fixed timing margins - allows dynamic adaptation to voltage/temperature drift in real time
Programmable output impedance (ZQ)Compensates for PCB trace impedance variation across manufacturing lots - improves signal integrity without redesigning termination networks
Configurable latency (DOFF pin)Enables same footprint support for both DDR II+ (2.5-cycle, 600 MHz) and legacy DDR I (1-cycle, ≤167 MHz) systems - reduces BOM count

Applications

High-Speed Packet BufferingFPGA-Based Protocol Acceleration

Use Scenario: Storing ingress/egress Ethernet frames in 10G/25G switch ASICs with zero-latency burst access.

IC Role / Device Role / Timing Role: Primary burst-access buffer providing dual-word reads aligned to line-rate clock domain via K/K and CQ/CQ.

Use Value: 2.5-cycle latency + QVLD enables deterministic frame boundary detection without pipeline stalls or FIFO depth expansion.

Use Scenario: Offloading TCP/IP checksum, encryption, or header parsing in FPGA-accelerated NICs.

IC Role / Device Role / Timing Role: High-throughput scratchpad memory interfaced directly to FPGA fabric using HSTL I/O banks.

Use Value: 1200 MT/s DDR bandwidth sustains >95% utilization of 25G SerDes lanes during concurrent packet inspection and rewrite.

Telecom Line Card MemoryReal-Time Signal Processing Buffer

Use Scenario: Holding voice/data payload in multi-channel TDM-over-IP gateways requiring jitter-free memory access.

IC Role / Device Role / Timing Role: Synchronous burst SRAM synchronized to network timing reference via PLL-locked K/K clocks.

Use Value: Echo clocks CQ/CQ eliminate inter-chip skew across 16+ memory devices - maintains sub-100 ps timing alignment across full line card.

Use Scenario: Capturing and buffering ADC samples in radar or ultrasound beamforming systems.

IC Role / Device Role / Timing Role: Low-jitter, deterministic-latency memory staging raw sensor data before FFT or filtering pipelines.

Use Value: ZQ-calibrated outputs ensure clean 1.5 V signaling into high-speed ADC/DAC interfaces - reduces bit error rate below 1E-15.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
AS7C3256P-15TINAsynchronous 32K × 8 CMOS SRAM; no DDR, no echo clocks, 15 ns access; 5 V tolerantUsed in legacy control-plane microcontrollers; lacks burst, timing determinism, or high-speed interfaceSelect only for cost-sensitive, non-burst, sub-100 MHz control memory where timing predictability is not required
IS61WV102416BLL-10MLISynchronous 1M × 16 SRAM; single-data-rate; 10 ns cycle time; 3.3 V core/I/O; no PLL or ZQDeployed in industrial PLCs and motor controllers needing moderate bandwidth with simple timingChoose when DDR complexity is unnecessary and system clock < 100 MHz - avoids echo clock routing and QVLD logic overhead

Compared with AS7C3256P-15TIN and IS61WV102416BLL-10MLI, CY7C1568XV18-600BZXC uniquely delivers deterministic 2.5-cycle DDR latency, echo-clock–synchronized data capture, and on-die impedance tuning - essential for 600 MHz packet-processing and real-time signal buffering where timing margin is constrained.

Availability

CY7C1568XV18-600BZXC is available at Aetrix Electronics and suitable for high-speed packet buffering, FPGA-based protocol acceleration, and telecom line card memory requiring stable component supply across extended production lifecycles.

Supply support for CY7C1568XV18-600BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and timing precision.

CY7C1568XV18 belongs to the DDR II+ Xtreme SRAM product line, engineered specifically for deterministic, low-latency burst memory interfacing in 10G+ data-path systems where echo-clock synchronization and QVLD handshaking replace static timing budgets.

FAQ

What is the function of the DOFF pin, and how does it affect timing behavior?

The DOFF pin is an active-low PLL disable control. When asserted LOW, it disables the internal PLL and forces the device into DDR I mode with 1-cycle read latency and maximum 167 MHz operation. When HIGH, the PLL is enabled, supporting 2.5-cycle latency and up to 600 MHz clocking. This pin allows hardware-selectable timing modes without changing firmware or layout.

How does the ZQ pin enable output impedance matching, and what external component is required?

ZQ connects to a 240 Ω resistor tied to ground, enabling the device to calibrate its HSTL output drivers to 48 Ω (0.2 × 240 Ω). This matches typical PCB trace impedance, minimizing reflections and improving signal integrity at 1200 MT/s. Direct connection to VDDQ enables minimum-impedance mode; floating or grounding ZQ is prohibited and may cause undefined behavior.

Why are CQ and CQ labeled as "echo clocks," and how do they simplify system design?

CQ and CQ are free-running output clocks synchronized to K and K, respectively, and edge-aligned with valid DQ data. They eliminate the need for external delay-locked loops or manual PCB trace length matching - receivers use CQ/CQ edges to sample DQ[17:0], removing skew sensitivity and enabling robust 600 MHz interface timing across temperature and voltage variations.

Can CY7C1568XV18-600BZXC support partial-word writes, and how is byte masking implemented?

Yes - BWS[1:0] pins provide active-low byte write select control. BWS0 masks DQ[8:0], BWS1 masks DQ[17:9]. Both are sampled on K and K rising edges during write cycles. Unmasked bytes are written; masked bytes retain prior contents. This enables efficient 8-bit or 9-bit updates without full-word read-modify-write sequences, reducing bus traffic and latency in packet header manipulation.

CY7C1568XV18-600BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Last Time Buy
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II+
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
600 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1568XV18-600BZXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1568XV18-600BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of CY7C1568XV18-600BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1568XV18-600BZXC is usually 5 days.

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CY7C1568XV18-600BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1568XV18-600BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1568XV18-600BZXC?

For technical support, including CY7C1568XV18-600BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1568XV18-600BZXC requirements.

6.How does Aetrix verify that CY7C1568XV18-600BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1568XV18-600BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1568XV18-600BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1568XV18-600BZXC?

All CY7C1568XV18-600BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1568XV18-600BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1568XV18-600BZXC part is unused and in its original packaging.

Return procedure for CY7C1568XV18-600BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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