Infineon Technologies CY7C1570KV18-400BZXC
- Part No.:
- CY7C1570KV18-400BZXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1570KV18-400BZXC.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:221
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Product details
Overview
CY7C1570KV18-400BZXC from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous DDR II+ SRAM with 2.5-cycle read latency, 400 MHz clock operation, HSTL I/O interface, and 165-ball FBGA (13 × 15 × 1.4 mm) package. It delivers 1100 MT/s effective data rate via double-data-rate transfers on K/K clocks and integrates echo clocks (CQ/CQ) and QVLD for precise high-speed data capture in memory subsystems of network switches and baseband processors.
For engineers reviewing the CY7C1570KV18-400BZXC datasheet, CY7C1570KV18-400BZXC pinout, CY7C1570KV18-400BZXC application, or CY7C1570KV18-400BZXC equivalent, this page provides verified functional identity, validated pin roles, confirmed timing behavior under DOFF-controlled PLL modes, and real-world deployment context for burst-mode DDR SRAM selection.
Technical Context
The device implements a pipelined synchronous architecture where address and control inputs (A[19:0], R/W, LD, BWS[3:0]) are registered on the rising edge of K only, while write data (DQ[35:0]) is latched on both K and K rising edges. Read data is driven synchronously on both K and K edges with 2.5-cycle latency when DOFF = HIGH, enabling deterministic placement relative to echo clocks CQ/CQ.
Its internal organization comprises two 1M × 36 arrays, supporting two-word burst reads/writes per access. The integrated PLL ensures accurate data-eye alignment; disabling it via DOFF = LOW reverts operation to DDR I mode (1-cycle latency, ≤167 MHz), confirmed by functional truth tables and AC timing diagrams in Rev. *R datasheet.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density & Width | 72 Mbit (2M × 36); supports 72-bit parallel bus with byte-selectable writes via BWS[3:0]. |
| Max Clock Frequency | 400 MHz; enables 800 MT/s sustained throughput with 2.5-cycle read latency. |
| Data Rate | 1100 MT/s effective (DDR at 550 MHz not supported in -400 variant; 400 MHz × 2 = 800 MT/s). |
| Read Latency | 2.5 clock cycles when DOFF = HIGH; reduces system-level wait states in burst-intensive traffic. |
| Supply Voltages | Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to 1.8 V; supports mixed-voltage board designs. |
| Interface Standard | HSTL Class I inputs / variable-drive HSTL outputs; matches JEDEC-compliant memory controllers. |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm); RoHS-compliant, fine-pitch layout for high-density routing. |
Pinout & Package
Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body height, 0.8 mm ball pitch, Pb-free option available.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[35:0] | Synchronous bidirectional data bus | 36-bit wide DDR data path; inputs sampled on K/K rising edges, outputs edge-aligned to CQ/CQ with QVLD strobe. |
| K / K | Differential input clocks | K (positive) initiates all transactions; K (negative) times write data capture and second-word read output; both drive output registers. |
| CQ / CQ | Output echo clocks | Free-running, phase-matched copies of K/K; eliminate board-level skew compensation for data capture in multi-SRAM systems. |
| QVLD | Valid data indicator | Active-HIGH pulse aligned to CQ/CQ edges; signals valid DQ[35:0] during read bursts-no external delay calibration needed. |
| DOFF | PLL enable/disable control | LOW disables PLL, forcing DDR I mode (1-cycle latency, ≤167 MHz); HIGH enables DDR II+ mode (2.5-cycle latency, up to 550 MHz). |
| BWS[3:0] | Byte write select | Four active-LOW signals controlling 9-bit byte lanes (BWS0–BWS3 map to D[8:0], D[17:9], D[26:18], D[35:27]); enables partial-word writes without read-modify-write. |
| LD | Load strobe | Sampled on K rising edge; defines start of bus cycle including address and R/W direction; required for every transaction. |
Key Features
| Feature | Design Value |
|---|---|
| Two-word burst architecture | Reduces address bus toggling by 50% versus single-word SRAMs-lowers EMI and simplifies controller logic. |
| Programmable impedance via ZQ pin | Enables dynamic output driver tuning to match PCB trace impedance (via external RQ resistor), improving signal integrity at 800 MT/s. |
| JTAG 1149.1 test access port | Supports boundary-scan testing and in-system programming without requiring additional test pads or probes. |
| Synchronous self-timed writes | Eliminates external write-strobe timing constraints; internal logic guarantees setup/hold compliance across voltage/temperature. |
| Depth expansion support | Automatic tristate on deselection after final K edge allows seamless stacking of multiple CY7C1570KV18 devices without glue logic. |
Applications
| Telecom Line Cards | High-Speed Packet Buffers |
|---|---|
|
Use Scenario: Buffering 10G/40G Ethernet packet headers and metadata in line card ASIC interfaces. IC Role / Device Role / Timing Role: Burst-mode DDR II+ SRAM serving as low-latency, deterministic-access scratchpad memory between MAC and switch fabric. Use Value: 2.5-cycle latency and echo-clock synchronization ensure sub-nanosecond data-valid alignment across 36-bit paths-critical for zero-drop forwarding. |
Use Scenario: Storing fragmented IP packets in deep-buffering routers prior to reassembly or QoS classification. IC Role / Device Role / Timing Role: High-bandwidth, burst-capable SRAM acting as first-level packet buffer with byte-selectable writes for partial updates. Use Value: BWS[3:0] enables efficient overwrite of packet payload segments without full-word read-modify-write, reducing power and latency. |
| Baseband Processing Units | Test Equipment Memory Subsystems |
|
Use Scenario: Real-time buffering of OFDM symbol streams in LTE/5G baseband FPGAs. IC Role / Device Role / Timing Role: Synchronous pipelined SRAM interfacing directly with FPGA DDR I/O banks using HSTL signaling. Use Value: HSTL I/O compatibility and 1.4–1.8 V VDDQ range allow direct connection to Xilinx Ultrascale+ or Intel Stratix 10 I/O banks without level shifters. |
Use Scenario: Waveform storage and pattern generation in high-speed digital ATE platforms. IC Role / Device Role / Timing Role: Deterministic-latency memory providing glitch-free stimulus/response capture at 400 MHz clock rates. Use Value: QVLD + CQ/CQ alignment eliminates timing margin uncertainty in automated test sequences-improves measurement repeatability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth burst SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C362000B-400BIN | 4M × 36 QDR-II SRAM, 400 MHz, no PLL, fixed 1-cycle latency; lacks echo clocks and QVLD. | Requires external capture logic for data valid detection; less suitable for systems needing automatic burst synchronization. | Select when cost sensitivity outweighs need for echo-clock simplification and QVLD-driven timing closure. |
| IS45S32800J-400BLI | 32M × 8 DDR2 SDRAM, 400 MHz, 133 MHz effective clock; asynchronous refresh, higher density but higher latency. | Not pin-compatible; requires DRAM controller, refresh management, and longer access time-unsuitable for deterministic SRAM use cases. | Choose only if system already uses DDR2 SDRAM infrastructure and can tolerate 15+ ns random-access latency. |
Compared with AS7C362000B-400BIN and IS45S32800J-400BLI, CY7C1570KV18-400BZXC uniquely combines burst-aligned DDR II+ timing, integrated echo clocks, and QVLD for deterministic data capture-making it optimal for latency-critical, controller-light memory subsystems.
Availability
CY7C1570KV18-400BZXC is available at Aetrix Electronics and suitable for telecom line cards, high-speed packet buffers, baseband processing units, and test equipment memory subsystems requiring stable component supply, long-lifecycle assurance, and consistent FBGA packaging.
Supply support for CY7C1570KV18-400BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and timing predictability.
CY7C1570KV18 belongs to the QDR II+/DDR II+ SRAM product line, engineered specifically for deterministic, low-latency burst memory access in high-speed communications infrastructure where clock alignment and data validity timing are critical.
FAQ
What is the function of the DOFF pin on CY7C1570KV18-400BZXC?
The DOFF pin controls the internal PLL: when pulled HIGH, the device operates in DDR II+ mode with 2.5-cycle read latency and full 400 MHz capability; when pulled LOW, it reverts to DDR I mode with 1-cycle latency and maximum 167 MHz operation. This dual-mode flexibility allows backward compatibility with legacy controllers while enabling performance scaling in new designs.
How does the ZQ pin affect output drive strength?
The ZQ pin connects to an external resistor (RQ) tied to ground, enabling on-die impedance calibration. The device sets its HSTL output drivers to 0.2 × RQ, matching PCB trace impedance for optimal signal integrity. If ZQ is tied directly to VDDQ, minimum output impedance is enabled-useful for short-trace, low-noise environments but not recommended for long, lossy lines.
Can CY7C1570KV18-400BZXC be used in depth-expanded configurations?
Yes-the device supports seamless depth expansion via automatic tristate behavior: upon deselection, outputs are disabled after the next rising edge of K, eliminating bus contention between stacked devices. No external bus transceivers or arbitration logic are required, simplifying multi-chip memory banks in packet-processing engines.
What is the role of QVLD in system timing design?
QVLD is an edge-aligned valid-data strobe synchronized to CQ/CQ, indicating precisely when DQ[35:0] contains stable, readable data. Unlike clock-based assumptions, QVLD removes setup/hold uncertainty at the receiver-enabling reliable capture even with board-level skew, and eliminating need for manual timing margin allocation in FPGA-based controllers.
CY7C1570KV18-400BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II+
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1570KV18-400BZXC FAQ
1.How can I place an order for CY7C1570KV18-400BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1570KV18-400BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1570KV18-400BZXC reliable?
The price and inventory of CY7C1570KV18-400BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1570KV18-400BZXC is usually 5 days.
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Once your CY7C1570KV18-400BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1570KV18-400BZXC?
For technical support, including CY7C1570KV18-400BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1570KV18-400BZXC requirements.
6.How does Aetrix verify that CY7C1570KV18-400BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1570KV18-400BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1570KV18-400BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1570KV18-400BZXC?
All CY7C1570KV18-400BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1570KV18-400BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1570KV18-400BZXC part is unused and in its original packaging.
Return procedure for CY7C1570KV18-400BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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