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Infineon Technologies CY7C1570KV18-400BZXI

Part No.:
CY7C1570KV18-400BZXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1570KV18-400BZXI.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,055

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Product details

Overview

CY7C1570KV18 from Cypress Semiconductor is a 72-Mbit synchronous pipelined SRAM with DDR II+ architecture, configured as 2M × 36 (72-bit wide data bus), operating at 400 MHz with 2.5-cycle read latency and 1.8 V core / 1.4–1.8 V I/O supply. It uses dual input clocks (K/K̄) and echo clocks (CQ/CQ̄) for precise DDR timing and supports byte-selectable writes via BWS[3:0]. It is deployed in high-bandwidth networking line cards requiring deterministic low-latency memory access.

For engineers reviewing the CY7C1570KV18 datasheet, CY7C1570KV18 pinout, CY7C1570KV18 application, or CY7C1570KV18 equivalent, key selection criteria include DDR II+ burst timing compliance, HSTL I/O compatibility, QVLD-synchronized data validity, and PLL-enabled 2.5-cycle latency mode versus DOFF-activated DDR I fallback.

Technical Context

The CY7C1570KV18 implements a synchronous, pipelined two-word burst architecture where each read/write initiates on the rising edge of K, with address latched on alternate K edges and data transferred on both K and K̄ edges. Its internal organization comprises two 1M × 36 arrays, enabling concurrent access management across dual banks.

It integrates a phase-locked loop (PLL) for accurate data placement relative to echo clocks CQ/CQ̄, and includes JTAG 1149.1 boundary scan support, ZQ impedance calibration, and programmable DOFF control to switch between DDR II+ (2.5-cycle latency) and DDR I (1-cycle latency) operation modes.

Key Specifications

Parameter Value and Actual Design Meaning
Density 72 Mbit (2M × 36 configuration)
Max Clock Frequency 400 MHz - defines maximum sustained data throughput of 2.88 GB/s (36-bit × 2 words × 400 MHz)
Read Latency 2.5 clock cycles (when DOFF = HIGH) - enables tighter system timing margins than standard DDR I
VDD / VDDQ Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to 1.8 V - supports mixed-voltage system integration with HSTL-compatible signaling
Interface Standard DDR II+ with echo clocks (CQ/CQ̄) and QVLD - eliminates external strobe routing and simplifies high-speed PCB layout
Package 165-ball FBGA (13 × 15 × 1.4 mm) - provides thermal and electrical performance suitable for dense telecom modules
Operating Temperature –40 °C to +85 °C - qualified for industrial and extended-temperature embedded applications

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
DQ[35:0] Synchronous bidirectional data bus 36-bit wide DDR data path; inputs sampled on K/K̄ rising edges, outputs driven aligned to CQ/CQ̄ with QVLD assertion
K / K̄ Differential input clocks Rising edges of both clocks control all synchronous operations; K used for address/control latching, both used for data transfer
CQ / CQ̄ Output echo clocks Free-running, K-synchronized clocks provided to simplify receiver capture timing without external delay compensation
QVLD Valid data indicator Asserted synchronously with CQ/CQ̄ rising edges to signal when DQ[35:0] contains valid read data
DOFF PLL disable control Active-low input; when LOW, disables PLL and reverts device to DDR I timing (1-cycle latency, ≤167 MHz max)
BWS[3:0] Byte write select Four active-low signals controlling independent 9-bit byte lanes (D[8:0], D[17:9], D[26:18], D[35:27]) during writes
LD Load control Synchronous load enable sampled on K rising edge; initiates address capture and transaction start for burst reads/writes
R/W Read/write direction Sampled with LD on K rising edge; HIGH = read, LOW = write - defines access type for loaded address
ZQ Impedance calibration reference Connects to external resistor to ground; calibrates output driver impedance to 0.2 × RQ for signal integrity on 50 Ω traces

Key Features

Feature Design Value
Two-word burst architecture Reduces address bus toggling frequency by 50% versus single-word SRAMs, lowering EMI and simplifying controller logic
Integrated PLL with echo clocks Enables deterministic 2.5-cycle read latency and eliminates need for board-level clock deskew or trace-length matching
QVLD-synchronized output validity Removes ambiguity in data capture windows - receivers use QVLD edge instead of relying on setup/hold timing margins
HSTL-compatible I/O with variable drive Supports 1.4 V or 1.8 V VDDQ operation and matches JEDEC HSTL Class I specifications for interoperability with FPGA/ASIC memory controllers
JTAG 1149.1 boundary scan Enables in-system testability and debug visibility without requiring additional test pads or probe points on high-density PCBs

Applications

Telecom Line Cards High-Speed Packet Buffers

Use Scenario: Storing ingress/egress packet headers and metadata in 10G/25G Ethernet switching ASICs.

IC Role / Device Role / Timing Role: Low-latency, burst-access buffer interfacing directly with SerDes MAC controllers via DDR II+ interface.

Use Value: 2.5-cycle latency and echo-clock alignment reduce controller pipeline stalls, improving per-packet processing throughput by up to 18% vs. DDR I SRAMs.

Use Scenario: Acting as shared buffer between multiple traffic manager engines in multi-core network processors.

IC Role / Device Role / Timing Role: Synchronous, depth-expandable memory node supporting concurrent read/write bursts across dual 1M × 36 banks.

Use Value: Byte-write select (BWS[3:0]) enables partial-word updates without read-modify-write cycles, cutting average write latency by 40% in fragmented packet scenarios.

Industrial Real-Time Controllers Test Equipment Pattern Memory

Use Scenario: Holding motion control trajectory tables and sensor fusion buffers in deterministic PLC architectures.

IC Role / Device Role / Timing Role: Deterministic-access SRAM providing jitter-free data delivery to FPGA-based servo logic under 400 MHz clocking.

Use Value: DOFF pin allows runtime fallback to DDR I mode (1-cycle latency) during PLL calibration or fault recovery, preserving real-time responsiveness.

Use Scenario: Storing high-fidelity stimulus/response patterns in automated test equipment (ATE) channel cards.

IC Role / Device Role / Timing Role: High-reliability, neutron-immune SRAM with JTAG scan support for production test coverage and field diagnostics.

Use Value: ZQ-calibrated HSTL outputs ensure <±5 ps skew across all 36 DQ lines at 1100 MT/s, critical for sub-nanosecond pattern timing accuracy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C362000B-400BIN 400 MHz QDR IV SRAM (2M × 36), no PLL, fixed 1.5-cycle latency, 1.5 V only VDDQ Lacks echo clocks and QVLD; requires external strobe routing and tighter layout constraints Preferred where cost sensitivity outweighs timing margin requirements and controller lacks echo-clock support
IS61WV204836BLL-400BLI 400 MHz DDR II SRAM (2M × 36), no DOFF mode, no ZQ calibration, 1.8 V VDDQ only Missing impedance tuning and DDR I fallback; less robust in mixed-voltage or noisy industrial environments Selected when legacy DDR II compatibility is required and system does not require dynamic latency switching or HSTL flexibility

Compared with AS7C362000B-400BIN and IS61WV204836BLL-400BLI, the CY7C1570KV18 uniquely delivers PLL-controlled 2.5-cycle latency, QVLD-synchronized output validity, and dual-voltage HSTL I/O - making it optimal for new designs demanding timing predictability and signal integrity at 1100 MT/s.

Availability

CY7C1570KV18 is available at Aetrix Electronics and suitable for telecom line cards, high-speed packet buffers, industrial real-time controllers, and ATE pattern memory systems requiring stable component supply across extended product lifecycles.

Supply support for CY7C1570KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

The CY7C1570KV18 belongs to Cypress's QDR II+ SRAM product line, designed specifically for bandwidth-constrained, low-jitter applications in networking infrastructure and real-time embedded systems requiring deterministic DDR timing and robust signal integrity.

FAQ

What is the function of the DOFF pin on CY7C1570KV18?

The DOFF (PLL Turn Off) pin is an active-low control that disables the internal PLL when asserted LOW. In this state, the device operates in DDR I mode with 1-cycle read latency and a maximum frequency of 167 MHz. When DOFF is HIGH, the PLL is enabled, allowing full DDR II+ operation at up to 400 MHz with 2.5-cycle latency. The pin must be pulled up via ≤10 kΩ resistor for normal operation.

How does the ZQ pin affect signal integrity?

The ZQ pin connects to an external resistor to ground (typically 240 Ω) to calibrate the output driver impedance of DQ[35:0], CQ, and CQ̄ pins to 0.2 × RQ (≈48 Ω). This ensures matched 50 Ω trace termination, minimizing reflections and maintaining signal eye integrity at 1100 MT/s. Leaving ZQ unconnected or tying it to GND violates specification and degrades timing margins.

Can CY7C1570KV18 be depth-expanded with other SRAMs?

Yes - the device supports depth expansion using LD and R/W signals to coordinate multi-chip access. During deselection, outputs tristate automatically on the next K̄ rising edge, eliminating bus contention without external logic. Echo clocks (CQ/CQ̄) remain synchronized across devices when driven from a common K source, preserving timing alignment across expanded banks.

Is JTAG boundary scan supported in all operating modes?

Yes - IEEE 1149.1 JTAG functionality remains fully operational regardless of DOFF state or latency mode. TAP controller, instruction register, and boundary scan chain operate independently of the PLL and memory core timing, enabling in-system test and debug even during DDR I fallback or power-up sequences.

CY7C1570KV18-400BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II+
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
400 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1570KV18-400BZXI FAQ

1.How can I place an order for CY7C1570KV18-400BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1570KV18-400BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1570KV18-400BZXI reliable?

The price and inventory of CY7C1570KV18-400BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1570KV18-400BZXI is usually 5 days.

3.What payment methods are accepted for CY7C1570KV18-400BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1570KV18-400BZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1570KV18-400BZXI?

CY7C1570KV18-400BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1570KV18-400BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1570KV18-400BZXI?

For technical support, including CY7C1570KV18-400BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1570KV18-400BZXI requirements.

6.How does Aetrix verify that CY7C1570KV18-400BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C1570KV18-400BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1570KV18-400BZXI meets industry standards.

7.What is the process for return or replacement of CY7C1570KV18-400BZXI?

All CY7C1570KV18-400BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1570KV18-400BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1570KV18-400BZXI part is unused and in its original packaging.

Return procedure for CY7C1570KV18-400BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1570KV18-400BZXI Tags

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