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Infineon Technologies CY7C1570KV18-450BZC

Part No.:
CY7C1570KV18-450BZC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1570KV18-450BZC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,639

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Product details

Overview

CY7C1570KV18 from Cypress Semiconductor is a 72-Mbit synchronous pipelined DDR II+ SRAM configured as 2M × 36, operating at up to 450 MHz (2.5-cycle read latency), with HSTL I/O, dual echo clocks (CQ/CQ), and QVLD data-valid indicator. It serves as high-bandwidth buffer memory in network packet processors requiring precise DDR timing and burst-aligned data transfer.

For engineers reviewing the CY7C1570KV18 datasheet, CY7C1570KV18 pinout, CY7C1570KV18 application, or CY7C1570KV18 equivalent, key selection criteria include its 2.5-cycle vs. 1-cycle latency mode (controlled by DOFF), 1.8 V core / 1.4–1.8 V I/O supply flexibility, JTAG 1149.1 test support, and FBGA-165 package compatibility with depth-expansion topologies.

Technical Context

This device implements a two-word burst architecture where each address access delivers two sequential 36-bit words on alternating edges of K/K clocks. Internal pipelining enables back-to-back read initiation every K cycle, while synchronous self-timed writes eliminate external write-strobe timing constraints.

The integrated PLL aligns output data edges to echo clocks CQ/CQ with sub-nanosecond skew, and ZQ pin enables dynamic output impedance calibration to match system bus termination. DOFF pin toggles between DDR II+ (2.5-cycle latency, ≤450 MHz) and DDR I (1-cycle latency, ≤167 MHz) operational modes.

Key Specifications

Parameter Value and Actual Design Meaning
Density & Organization 72 Mbit, 2M × 36 configuration - supports wide-data-path buffering without external multiplexing
Max Clock Frequency 450 MHz - enables 900 MT/s effective data rate with DDR interface
Read Latency 2.5 clock cycles (DOFF = HIGH) - deterministic timing for pipeline-synchronized systems
Core / I/O Voltage VDD = 1.8 V ±0.1 V; VDDQ = 1.4 V to 1.8 V - allows interoperability with 1.5 V or 1.8 V memory subsystems
I/O Standard HSTL Class I inputs, variable-drive HSTL outputs - ensures signal integrity at >450 MHz clock rates
Package 165-ball FBGA (13 × 15 × 1.4 mm) - industry-standard footprint for high-pin-count DDR SRAMs
JTAG Support IEEE 1149.1 compliant TAP - enables boundary-scan testing in dense PCB layouts

Pinout & Package

Package: 165-ball fine-pitch BGA (13 mm × 15 mm × 1.4 mm), RoHS-compliant, with 0.8 mm ball pitch.

Pin/Terminal Circuit Role Design Meaning
DQ[35:0] Synchronous bidirectional data bus 36-bit DDR data path; sampled on K/K rising edges during writes, driven on K/K rising edges during reads with echo-clock alignment
K / K Differential input clocks Rising edges control all synchronous registers; K initiates transactions, K times second word of burst
CQ / CQ Output echo clocks Free-running, phase-matched to K/K; used by system logic to capture Q[35:0] without routing skew compensation
QVLD Valid data indicator Asserted edge-aligned with CQ/CQ; signals when Q[35:0] contains valid burst data - eliminates need for fixed delay windows
DOFF PLL enable/disable control Active LOW; disables internal PLL to revert to DDR I timing (1-cycle latency, max 167 MHz) for legacy compatibility
ZQ Output impedance calibration reference Connects to external resistor to ground; calibrates CQ/CQ/Q[35:0] drive strength to 0.2×RQ for consistent signal integrity
LD Load strobe Sampled on K rising edge; defines start of burst transaction - must be stable before K edge to latch address/R/W/BWS
BWS[3:0] Byte write select Four active-LOW signals controlling 9-bit byte lanes (D[8:0], D[17:9], D[26:18], D[35:27]); enables partial-word writes without read-modify-write

Key Features

Feature Design Value
Two-word burst architecture Reduces address bus frequency by 2× versus single-word SRAMs - lowers PCB routing complexity and timing closure effort
Programmable latency mode (DOFF) Enables field-selectable operation between high-performance DDR II+ (2.5-cycle) and backward-compatible DDR I (1-cycle) timing
Integrated echo clocks (CQ/CQ) Eliminates board-level clock forwarding and deskew circuitry - simplifies high-speed data capture in multi-SRAM systems
On-die impedance calibration (ZQ) Compensates for process/voltage/temperature drift in output drive strength - maintains consistent signal rise/fall times across conditions
Synchronous self-timed writes Removes requirement for external write-enable pulse generation - reduces controller logic and improves write reliability at speed

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing ingress/egress packet headers and metadata in 10G/25G Ethernet switch ASICs with strict latency budgets.

IC Role / Device Role / Timing Role: High-throughput, low-latency burst buffer interfacing directly to SerDes MAC controllers via DDR interface.

Use Value: 2.5-cycle latency and echo-clock alignment ensure deterministic data delivery within 1.1 ns jitter window required for time-sensitive forwarding pipelines.

Use Scenario: Serving as shared memory for DSP co-processors and framer ICs in OTN/SDH line cards handling multiple OC-192 streams.

IC Role / Device Role / Timing Role: Wide-data-path (36-bit) buffer enabling parallel processing of frame overhead bytes and payload segments.

Use Value: 2M × 36 organization avoids external data-width conversion logic, reducing gate count and power in FPGA-based line card designs.

Depth-Expanded Memory Subsystem Test Equipment Pattern Memory

Use Scenario: Cascading multiple CY7C1570KV18 devices to build 2M × 144-bit or larger memory banks for protocol analyzers.

IC Role / Device Role / Timing Role: Synchronously controlled slave in depth-expanded topology using shared K/K/CQ/CQ and distributed LD/R/W.

Use Value: Automatic tristate on deselect and QVLD synchronization allow seamless handoff between devices without wait-state insertion.

Use Scenario: Storing high-speed digital stimulus/response patterns in ATE systems requiring nanosecond-level timing repeatability.

IC Role / Device Role / Timing Role: Deterministic latency SRAM providing glitch-free pattern playback synchronized to system master clock.

Use Value: PLL-based data placement and sub-0.5 ns output skew guarantee repeatable edge placement across temperature and voltage ranges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C362000B-450BIN 450 MHz QDR II+ SRAM, 2M × 36, but uses SSTL-2 I/O and lacks echo clocks or ZQ calibration Requires external clock forwarding and impedance tuning; less suitable for compact, multi-device layouts Select when cost sensitivity outweighs layout simplification benefits of echo clocks and ZQ
IS61WV102436BLL-450TQLI 450 MHz DDR II+ SRAM, 2M × 36, but only supports 1.5 V I/O and has no DOFF latency toggle or JTAG Limited to 1.5 V systems; no field-reconfigurable latency mode or production testability via boundary scan Select for 1.5 V-only designs where JTAG test access and dual-voltage I/O are not required

Compared with AS7C362000B-450BIN and IS61WV102436BLL-450TQLI, CY7C1570KV18 uniquely combines echo-clock timing simplification, programmable latency, and ZQ calibration - making it optimal for space-constrained, multi-SRAM, mixed-voltage telecom and test equipment designs.

Availability

CY7C1570KV18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, depth-expanded memory subsystems, and test equipment pattern memory requiring stable component supply and long-term industrial availability.

Supply support for CY7C1570KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and system-level timing robustness.

CY7C1570KV18 belongs to the QDR II+/DDR II+ SRAM product line, engineered specifically for deterministic, low-jitter, high-bandwidth buffering in packet-processing and real-time test instrumentation systems.

FAQ

What is the function of the DOFF pin, and how does it affect timing?

The DOFF pin controls the internal PLL: when HIGH, the device operates in DDR II+ mode with 2.5-cycle read latency up to 450 MHz; when LOW, it reverts to DDR I mode with 1-cycle latency and maximum 167 MHz operation. This allows hardware-level timing mode selection without firmware changes, supporting both performance-critical and legacy-compatible system configurations.

How do CQ and CQ echo clocks simplify system design?

CQ and CQ are free-running output clocks synchronized to the input K/K clocks, with edge alignment to Q[35:0] data transitions. They eliminate the need for board-level clock forwarding and deskew circuits, allowing system logic to sample data using local CQ/CQ edges - reducing timing margin uncertainty and simplifying layout in multi-SRAM depth-expanded systems.

Can CY7C1570KV18 operate with 1.5 V I/O supply?

Yes - the device supports VDDQ from 1.4 V to 1.8 V, explicitly including 1.5 V. Its HSTL Class I inputs and variable-drive outputs are fully compatible with 1.5 V signaling, enabling interoperability with legacy FPGAs and ASICs that lack 1.8 V I/O capability while maintaining full 450 MHz performance.

What is the role of the ZQ pin, and how should it be connected?

ZQ is an impedance calibration reference input. It must be connected to a precision resistor (typically 240 Ω) tied to ground to set output driver impedance to 0.2×RQ (~48 Ω). Alternatively, connecting ZQ directly to VDDQ enables minimum-impedance mode. It must never be left floating or tied to GND, as this disables calibration and risks signal integrity failure.

CY7C1570KV18-450BZC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II+
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
450 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1570KV18-450BZC FAQ

1.How can I place an order for CY7C1570KV18-450BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1570KV18-450BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1570KV18-450BZC reliable?

The price and inventory of CY7C1570KV18-450BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1570KV18-450BZC is usually 5 days.

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CY7C1570KV18-450BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1570KV18-450BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1570KV18-450BZC?

For technical support, including CY7C1570KV18-450BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1570KV18-450BZC requirements.

6.How does Aetrix verify that CY7C1570KV18-450BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1570KV18-450BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1570KV18-450BZC meets industry standards.

7.What is the process for return or replacement of CY7C1570KV18-450BZC?

All CY7C1570KV18-450BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1570KV18-450BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1570KV18-450BZC part is unused and in its original packaging.

Return procedure for CY7C1570KV18-450BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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