Infineon Technologies CY7C1570V18-375BZXC
- Part No.:
- CY7C1570V18-375BZXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1570V18-375BZXC.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:3,770
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Product details
Overview
CY7C1570V18 from Cypress Semiconductor is a 72-Mbit synchronous pipelined SRAM with DDR-II+ architecture, configured as 2M × 36 bits and operating at 375 MHz (2.5-cycle read latency). It features dual-edge DDR data transfer at 750 Mbps per pin, HSTL I/O with programmable drive strength, and integrated echo clocks (CQ/CQ) for precise high-speed data capture in memory subsystems. Used in network packet buffers and FPGA co-processor caches requiring deterministic low-latency burst access.
For engineers reviewing the CY7C1570V18 datasheet, CY7C1570V18 pinout, CY7C1570V18 application, or CY7C1570V18 equivalent, key selection criteria include its 2M × 36 organization, 165-ball FBGA package, 1.8V core / 1.4–1.8V I/O supply range, DLL-enabled timing alignment, and JTAG 1149.1 test port support for production validation.
Technical Context
The device implements a synchronous pipelined architecture where all address, control, and data signals are registered on rising edges of complementary K/K clocks. Read and write operations execute as 2-word bursts, with internal address decoding across two 1M × 36 arrays.
It integrates a Delay Lock Loop (DLL) to align CQ/CQ echo clocks with K/K for zero-skew data capture, supports nibble/byte write masking via BWS[3:0], and uses ZQ calibration to match output impedance to system bus termination (0.2 × RQ).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 organization) |
| Max Clock Frequency | 375 MHz - enables 750 MT/s DDR data rate with 2.5-cycle read latency |
| Core Supply (VDD) | 1.8 V ± 0.1 V - defines stable SRAM cell operation and leakage control |
| I/O Supply (VDDQ) | 1.4 V to 1.8 V - supports HSTL Class I compatibility and flexible board-level voltage scaling |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm) - provides 36-bit wide interface with controlled impedance routing |
| Timing Interface | DDR-II+ with DLL and echo clocks (CQ/CQ) - eliminates external strobe routing and simplifies PCB layout |
| Write Masking | BWS[3:0] - enables independent byte-level write control across all 36 data bits |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body height, RoHS-compliant Pb-free option available.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[35:0] | Synchronous bidirectional data bus | 36-bit DDR data path; driven on both K and K rising edges during reads; sampled on same edges during writes |
| K / K | Complementary input clocks | Reference timing for all synchronous registers; K initiates transactions, K captures second word of burst |
| CQ / CQ | Output echo clocks | Free-running, DLL-aligned copies of K/K; used by system logic to latch Q[35:0] without skew compensation |
| QVLD | Data validity indicator | Asserted edge-aligned with CQ/CQ to signal valid DQ[35:0] during read bursts |
| BWS[3:0] | Byte write select inputs | Active-low controls for 9-bit byte groups: BWS0→D[8:0], BWS1→D[17:9], BWS2→D[26:18], BWS3→D[35:27] |
| R/W | Read/write direction control | Sampled with LD on K rising edge; HIGH = read, LOW = write |
| LD | Load strobe | Initiates each 2-word burst transaction on K rising edge; defines address and R/W state |
| ZQ | Impedance calibration reference | Connects to external resistor to ground to calibrate CQ/CQ/Q[35:0] output drive strength to 0.2 × RQ |
| DOFF | DLL disable | Active-low; grounding disables DLL and reverts timing to DDR-I mode (≤167 MHz) |
| TCK/TMS/TDI/TDO | JTAG boundary-scan interface | IEEE 1149.1 compliant for production test and debug of memory interconnect integrity |
Key Features
| Feature | Design Value |
|---|---|
| 2-word burst architecture | Reduces address bus toggling by 50% versus single-word SRAMs, lowering system EMI and routing congestion |
| DLL-synchronized echo clocks | Eliminates need for board-level trace length matching between clock and data nets in high-speed memory interfaces |
| HSTL Class I I/O with variable drive | Ensures signal integrity at 750 MT/s while supporting multiple load conditions via ZQ calibration |
| Programmable write masking (BWS[3:0]) | Enables partial writes without read-modify-write cycles, critical for packet header updates in networking ASICs |
| 1.8V core + scalable VDDQ | Permits coexistence with 1.5V or 1.8V FPGA I/O banks while maintaining SRAM stability and power efficiency |
Applications
| Network Packet Buffer | FPGA Co-Processor Cache |
|---|---|
|
Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches before forwarding decisions. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer interfacing directly to MAC controller or switch fabric. Use Value: 2M × 36 configuration matches typical 128-byte packet alignment; 375 MHz clock sustains ≥24 Gbps aggregate throughput. |
Use Scenario: Off-chip instruction/data cache for Xilinx Virtex or Intel Stratix FPGA-based accelerators. IC Role / Device Role / Timing Role: Deterministic latency memory subsystem synchronized to FPGA's DDR-capable I/O banks. Use Value: DLL-aligned CQ/CQ outputs eliminate setup/hold violations at 750 MT/s, enabling reliable >95% utilization of FPGA I/O bandwidth. |
| Telecom Line Card Memory | Real-Time Video Frame Buffer |
|
Use Scenario: Holding ATM cell payloads or TDM time-slot data in carrier-grade optical line cards. IC Role / Device Role / Timing Role: Burst-access SRAM bridging serial framer ICs and parallel DSP processors. Use Value: BWS[3:0] allows selective update of individual 9-bit nibbles in SONET/SDH overhead bytes without full-word writes. |
Use Scenario: Dual-port frame storage for 4K60 video processing pipelines using time-multiplexed read/write access. IC Role / Device Role / Timing Role: Synchronous burst memory providing pixel-line buffering between video encoder and display controller. Use Value: QVLD signal enables precise frame-synchronized data capture; 2.5-cycle latency ensures sub-7 ns read response for real-time motion compensation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1568V18 | 4M × 18 organization, same 375 MHz speed, identical FBGA package and pinout except BWS[1:0] and DQ[17:0] | Higher density per byte but narrower 18-bit bus; requires wider data path routing or multiplexing for 36-bit systems | Select when system bus width is ≤18 bits or when higher word density outweighs interface width constraints |
| AS7C3256A-15JCIN | 256K × 16 async SRAM, 15 ns access, 3.3V only, no DDR, no DLL, SOJ-44 package | Lacks burst, echo clocks, and DLL; suitable only for legacy control-plane memory or non-timing-critical storage | Choose only for cost-sensitive, low-speed designs where deterministic latency and DDR bandwidth are not required |
Compared with CY7C1568V18, CY7C1570V18 delivers double data width at identical speed and latency-critical for 32+ bit processor buses-while AS7C3256A-15JCIN lacks all DDR-II+ timing features and cannot support burst or echo-clock–based capture.
Availability
CY7C1570V18 is available at Aetrix Electronics and suitable for network packet buffers, FPGA co-processor caches, and telecom line card memory requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.
Supply support for CY7C1570V18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.
CY7C1570V18 belongs to the DDR-II+ SRAM product line, engineered specifically for deterministic, high-bandwidth memory interfacing in FPGA- and ASIC-based infrastructure equipment where DDR timing precision and burst efficiency are mandatory.
FAQ
What is the function of the DOFF pin on CY7C1570V18?
The DOFF (DLL Turn Off) pin is an active-low input that disables the internal Delay Lock Loop when pulled to ground. In this mode, the device operates with DDR-I timing specifications and supports maximum frequencies up to 167 MHz. For full DDR-II+ performance at 375 MHz, DOFF must be pulled up via a ≤10 kΩ resistor to VDDQ.
How does the ZQ pin affect output drive strength?
The ZQ pin connects to an external resistor (RQ) tied to ground, enabling on-die calibration of CQ, CQ, and DQ[35:0] output driver impedance to precisely 0.2 × RQ. This ensures consistent signal integrity across voltage and temperature variations. If ZQ is tied directly to VDDQ, the device enters minimum-impedance mode instead of calibrated mode.
Can CY7C1570V18 operate with VDDQ = 1.5V?
Yes. The device supports VDDQ from 1.4 V to VDD (1.8 V), including 1.5 V. At 1.5 V, it maintains full 375 MHz operation and complies with HSTL Class I specifications. System designers must ensure VDDQ decoupling meets transient current demands during 750 MT/s DDR transitions.
What is the role of QVLD in system timing design?
QVLD is an edge-aligned output validity signal synchronized to CQ/CQ, indicating when DQ[35:0] data is stable and ready for sampling. It eliminates reliance on fixed setup/hold margins, allowing system logic to latch data on the same clock edge as QVLD assertion-critical for achieving timing closure in multi-Gbps memory interfaces.
CY7C1570V18-375BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 375 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1570V18-375BZXC FAQ
1.How can I place an order for CY7C1570V18-375BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1570V18-375BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1570V18-375BZXC reliable?
The price and inventory of CY7C1570V18-375BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1570V18-375BZXC is usually 5 days.
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Once your CY7C1570V18-375BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1570V18-375BZXC?
For technical support, including CY7C1570V18-375BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1570V18-375BZXC requirements.
6.How does Aetrix verify that CY7C1570V18-375BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1570V18-375BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1570V18-375BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1570V18-375BZXC?
All CY7C1570V18-375BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1570V18-375BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1570V18-375BZXC part is unused and in its original packaging.
Return procedure for CY7C1570V18-375BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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