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Infineon Technologies CY7C1570V18-400BZXC

Part No.:
CY7C1570V18-400BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1570V18-400BZXC.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,072

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Product details

Overview

CY7C1570V18 from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous pipelined DDR-II+ SRAM with 400 MHz clock operation, 2.5-cycle read latency, and HSTL I/O interfaces. It delivers 800 MT/s effective data rate via double-data-rate transfers on K/K clocks, supports burst-2 reads/writes, and integrates echo clocks (CQ/CQ) and QVLD for precise high-speed data capture in memory subsystems of network switches and packet buffers.

For engineers reviewing the CY7C1570V18 datasheet, CY7C1570V18 pinout, CY7C1570V18 application, or CY7C1570V18 equivalent, this device is selected for bandwidth-critical, low-latency buffer applications requiring deterministic 2.5-cycle read timing, synchronous self-timed writes, and impedance-matched HSTL signaling at 1.4–1.8 V IO supply.

Technical Context

The CY7C1570V18 implements a DDR-II+ architecture with dual input clocks (K and K), where all synchronous inputs-including address (A[19:0]), R/W, LD, and BWS[3:0]-are registered on the rising edge of K. Read data bursts two 36-bit words sequentially on alternating edges of K and K, aligned to echo clocks CQ/CQ and validated by QVLD.

It features an internal Delay Lock Loop (DLL) for accurate data placement, supports on-die impedance tuning via ZQ, and operates with core VDD = 1.8 V ± 0.1 V and IO VDDQ = 1.4 V to VDD. Write operations use synchronous self-timed circuitry, and output drivers are HSTL-compliant with variable drive strength.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (2M × 36 organization); enables compact high-bandwidth buffer design with 36-bit parallel interface
Maximum Clock Frequency 400 MHz; supports 800 MT/s effective throughput with DDR interface
Read Latency 2.5 clock cycles; guarantees deterministic timing for pipeline-synchronized memory access
VDD / VDDQ Core VDD = 1.8 V ± 0.1 V; IO VDDQ = 1.4 V to VDD; allows flexible power domain partitioning and HSTL compliance
Interface Standard HSTL Class I inputs and variable-drive HSTL outputs; ensures signal integrity on high-speed PCB traces up to 400 MHz
Package 165-ball FBGA (15 × 17 × 1.4 mm); optimized for thermal dissipation and routing density in multi-SRAM memory stacks
JTAG Support IEEE 1149.1 compliant TAP (TCK/TMS/TDI/TDO); enables boundary-scan testing and system-level debug

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, RoHS-compliant, with 0.8 mm ball pitch.

Pin/Terminal Circuit Role Design Meaning
DQ[35:0] Synchronous bidirectional data bus 36-bit DDR data path; latched on K/K rising edges during writes, driven on K/K rising edges during reads with echo-clock alignment
A[19:0] Synchronous address input 20-bit multiplexed address bus; sampled on K rising edge to select one of 2M locations in 2M × 36 array
R/W Read/write direction control Active-HIGH read / LOW write; sampled with LD on K rising edge to define transaction type
LD Load strobe Initiates burst-2 cycle; sampled on K rising edge to latch address and R/W state for pipelined access
BWS[3:0] Byte write select Four active-LOW signals controlling D[35:0] byte lanes; enables partial writes without read-modify-write overhead
K / K Dual differential clock inputs Positive/negative DDR clocks; all synchronous timing referenced to their rising edges; enable 2.5-cycle latency execution
CQ / CQ Echo clock outputs Free-running, DLL-aligned clocks synchronized to K/K; eliminate board-level skew for reliable data capture
QVLD Data validity indicator Output pulse edge-aligned with CQ/CQ; signals when DQ[35:0] contains valid burst data, simplifying receiver logic
ZQ Impedance calibration reference Connects to external resistor to ground; tunes CQ/CQ and DQ output driver impedance to 0.2 × RQ for signal integrity
DOFF DLL disable control Active-LOW pin; disables DLL to revert to DDR-I mode (≤167 MHz) for compatibility or power reduction

Key Features

Feature Design Value
DDR-II+ Burst Architecture 2-word burst with 2.5-cycle latency reduces address bus toggling and enables predictable pipeline depth in switch fabric buffers
Synchronous Self-Timed Writes On-chip write timing control eliminates external write-strobe generation and ensures reliable data setup/hold margins
Echo Clocks (CQ/CQ) + QVLD Eliminates need for separate capture clocks per SRAM; enables single-point data sampling across multi-device memory banks
HSTL I/O with ZQ Calibration Supports impedance-matched 1.4–1.8 V signaling; minimizes reflections and jitter on dense high-speed memory buses
Delay Lock Loop (DLL) Aligns internal data launch to echo clocks within ±50 ps; maintains timing margin at 400 MHz clock frequency

Applications

Network Packet Buffer Telecom Line Card Cache

Use Scenario: Storing ingress/egress packet headers and metadata in 10G/40G Ethernet line cards.

IC Role / Device Role / Timing Role: High-throughput, low-latency shared buffer with deterministic 2.5-cycle read response for header parsing pipelines.

Use Value: 72-Mbit capacity and 800 MT/s bandwidth support concurrent packet buffering across multiple ports without contention stalls.

Use Scenario: Acting as a temporary frame store in SONET/SDH add-drop multiplexers for traffic grooming.

IC Role / Device Role / Timing Role: Synchronous burst-access SRAM providing jitter-free data staging between framer and switch fabric.

Use Value: Echo clocks and QVLD simplify timing closure in multi-chip memory banks, reducing FPGA capture logic complexity.

High-Speed Test Equipment Memory Avionics Data Acquisition Buffer

Use Scenario: Capturing real-time waveform samples in automated test systems with >500 MS/s sampling rates.

IC Role / Device Role / Timing Role: Deterministic-latency buffer interfacing directly to high-speed ADCs/DACs via HSTL buses.

Use Value: 1.4 V VDDQ compatibility and DLL-controlled output timing ensure clean signal integrity at 400 MHz clock rates.

Use Scenario: Buffering sensor telemetry streams in flight control computers requiring radiation-tolerant timing predictability.

IC Role / Device Role / Timing Role: Radiation-hardened-by-design SRAM used in safety-critical buffer stages with fail-safe QVLD validation.

Use Value: Synchronous self-timed writes and burst-2 reads guarantee no hidden latency variation under temperature/voltage drift.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1568V18 4M × 18 organization (72 Mbit), same DDR-II+ architecture, 400 MHz, identical FBGA package Wider data bus (18-bit) but half the depth (4M vs 2M); suited for 18-bit datapath systems like legacy DSP interconnects Select when system bus width matches 18 bits and deeper addressing is unnecessary; pin-compatible but different DQ/BWS mapping
AS7C3256B-15JCIN 32-Mbit (2M × 16) async CMOS SRAM; no DDR, no DLL, no echo clocks; 15 ns access, 3.3 V only Lacks burst, DDR, or timing predictability; used in non-pipelined control-plane memory where latency variability is acceptable Choose only for cost-sensitive, low-speed control storage; not suitable for bandwidth-critical data-path buffering

Compared with CY7C1568V18, CY7C1570V18 offers native 36-bit width and simplified byte-write granularity (BWS[3:0]) for wider datapaths, while AS7C3256B-15JCIN lacks all DDR-II+ timing features and cannot meet deterministic 400 MHz system requirements.

Availability

CY7C1570V18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card caching, and high-speed test equipment requiring stable component supply, long-term obsolescence management, and traceable sourcing.

Supply support for CY7C1570V18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.

CY7C1570V18 belongs to the DDR-II+ SRAM product line engineered specifically for deterministic, high-bandwidth buffering in packet-switched infrastructure where 2.5-cycle latency and echo-clock synchronization are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1570V18?

The DOFF pin disables the internal Delay Lock Loop when pulled LOW. In DLL-off mode, the device reverts to DDR-I timing with maximum 167 MHz operation and relaxed setup/hold margins. For full DDR-II+ performance at 400 MHz, DOFF must be pulled HIGH via ≤10 kΩ resistor to VDDQ.

How does the ZQ pin affect signal integrity in CY7C1570V18?

ZQ connects to an external resistor to ground (typically 100 Ω) to calibrate output driver impedance to 0.2 × RQ. This matches CQ, CQ, and DQ[35:0] to the PCB trace impedance, minimizing reflections and ensuring clean eye diagrams at 800 MT/s. Leaving ZQ unconnected or tied to GND violates specification.

Can CY7C1570V18 operate with VDDQ = 1.4 V while VDD = 1.8 V?

Yes. The datasheet explicitly permits VDDQ from 1.4 V to VDD (1.8 V). Operating at 1.4 V reduces IO power and noise while maintaining HSTL Class I compatibility. Core logic remains at 1.8 V, enabling independent voltage scaling for thermal and EMI optimization.

What is the role of QVLD in system-level timing design?

QVLD is a synchronous output pulse edge-aligned with CQ/CQ that asserts exactly when DQ[35:0] carries valid burst data. It replaces complex clock-domain crossing logic in FPGA receivers, allowing direct use as a data-valid strobe for FIFO loading or parallel-to-serial conversion without additional timing analysis.

CY7C1570V18-400BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
400 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1570V18-400BZXC FAQ

1.How can I place an order for CY7C1570V18-400BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1570V18-400BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1570V18-400BZXC reliable?

The price and inventory of CY7C1570V18-400BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1570V18-400BZXC is usually 5 days.

3.What payment methods are accepted for CY7C1570V18-400BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1570V18-400BZXC transactions.

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CY7C1570V18-400BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1570V18-400BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1570V18-400BZXC?

For technical support, including CY7C1570V18-400BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1570V18-400BZXC requirements.

6.How does Aetrix verify that CY7C1570V18-400BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1570V18-400BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1570V18-400BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1570V18-400BZXC?

All CY7C1570V18-400BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1570V18-400BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1570V18-400BZXC part is unused and in its original packaging.

Return procedure for CY7C1570V18-400BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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