Infineon Technologies CY7C1612KV18-250BZXC

Overview

CY7C1612KV18-250BZXC from Infineon Technologies (formerly Cypress) is an 8M × 18, 144-Mbit QDR® II synchronous SRAM with two-word burst architecture, 250 MHz maximum clock frequency (400 ps cycle time), 1.8 V core supply, and 1.4–1.8 V I/O supply. It features separate read/write ports, DDR interfaces on both ports, echo clocks (CQ/CQ), and PLL-based timing control for high-speed networking buffers and packet memory in telecom infrastructure.

For engineers reviewing the CY7C1612KV18-250BZXC datasheet, CY7C1612KV18-250BZXC pinout, CY7C1612KV18-250BZXC application, or CY7C1612KV18-250BZXC equivalent, key selection criteria include its 1.8 V core/1.4–1.8 V I/O dual-supply operation, 165-ball FBGA package (15 × 17 × 1.4 mm), 1-cycle vs. 1.5-cycle read latency selectability via DOFF, and JTAG 1149.1 compliance for boundary-scan testability.

Technical Context

This QDR II SRAM implements a true dual-port architecture with physically independent read and write data paths-no bus turnaround required-enabling concurrent read and write operations at full bandwidth. Its internal address latching uses alternating rising edges of K/K clocks, and output data is synchronized to C/C clocks with echo-clock support for precise source-synchronous capture.

The device integrates a Phase-Locked Loop (PLL) for accurate data placement and jitter reduction, supports byte-write masking via four BWS inputs (BWS[1:0] active for ×18 configuration), and provides programmable impedance calibration (ZQ pin) for signal integrity optimization across high-speed PCB interconnects.

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C1612KV18-250BZXC, the -300BZXC variant offers higher bandwidth at the cost of greater power and layout complexity, while the AS7C33256PFS-250BIN is functionally incompatible due to its asynchronous, single-port architecture and absence of QDR-specific timing controls.

Availability

CY7C1612KV18-250BZXC is available at Aetrix Electronics and suitable for network packet buffering, switch fabric memory, and telecom line card memory requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial and communications equipment.

Supply support for CY7C1612KV18-250BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, memory solutions, and security ICs with over 40 years of industrial reliability focus.

This device belongs to Infineon's QDR II SRAM product line-designed specifically for high-bandwidth, low-latency memory subsystems in networking, telecommunications, and high-performance computing where deterministic dual-port access is mandatory.

FAQ

What is the function of the DOFF pin on CY7C1612KV18-250BZXC?

The DOFF (Data Output OFFset) pin selects read latency mode: when asserted high, it configures the device for QDR II operation with 1.5-cycle latency; when low, it enables QDR I compatibility mode with 1-cycle latency. This setting is sampled synchronously on the rising edge of the K clock during initialization and remains latched until reset or power cycle.

Can CY7C1612KV18-250BZXC operate with only a single clock domain (K only)?

Yes-it supports single-clock mode where both read and write operations use the K clock exclusively. In this mode, C and C clocks are unused, and output data is clocked by K and K instead. However, echo clocks (CQ/CQ) and C/C deskew benefits are forfeited, limiting maximum reliable data rate in high-speed PCB layouts.

How many byte write select (BWS) signals are active in the ×18 configuration?

In the CY7C1612KV18-250BZXC (×18), two BWS inputs are active: BWS0 controls D[8:0] and BWS1 controls D[17:9]. Both are sampled on the rising edge of K/K during write operations. Asserting either low disables its corresponding 9-bit byte; deasserting both enables full 18-bit writes.

Is the ZQ pin required for normal operation?

Yes-the ZQ pin must be connected to a 240 Ω resistor to ground for HSTL output driver impedance calibration. Without this connection, output drive strength and termination matching degrade, increasing signal reflection and timing uncertainty-especially above 400 MT/s. Calibration occurs automatically at power-up and can be retriggered via JTAG.