Infineon Technologies CY7C1612KV18-250BZXI

Overview

CY7C1612KV18-250BZXI from Infineon Technologies (formerly Cypress) is an 8M × 18, 144-Mbit QDR® II SRAM with synchronous pipelined architecture, dual independent read/write ports, 250 MHz maximum clock frequency (K/K), 500 MHz DDR data rate (1.0 Gbps per port), and 1.8 V core / 1.4–1.8 V I/O supply. It delivers concurrent high-bandwidth memory access for network packet buffering in telecom line cards.

For engineers reviewing the CY7C1612KV18-250BZXI datasheet, CY7C1612KV18-250BZXI pinout, CY7C1612KV18-250BZXI application, or CY7C1612KV18-250BZXI equivalent, key selection criteria include 250 MHz K-clock timing margin, 1.5-cycle read latency with DOFF high, HSTL-18 I/O compatibility, 165-ball FBGA (15 × 17 mm) mechanical fit, and JTAG 1149.1 test support for production validation.

Technical Context

The device implements a true Quad Data Rate II architecture with physically separate read and write data paths-eliminating bus turnaround overhead-and uses two independent clock domains: K/K for address/data capture and C/C for output data strobing. Its internal PLL ensures precise 90° phase alignment between echo clocks (CQ/CQ) and output data edges.

It supports depth expansion via RPS/WPS and byte-write select (BWS[1:0]) for 18-bit word granularity, operates with synchronous self-timed writes, and maintains full data coherency across concurrent read/write operations at up to 250 MHz clock frequency.

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, Pb-free (RoHS-compliant) construction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C1612KV18-300BZXI, this -250BZXI variant trades 50 MHz clock headroom for relaxed PCB layout constraints and lower power consumption (800 mA vs. 910 mA at 250 MHz), while AS7C3256A-25JC lacks all QDR-specific timing and concurrency capabilities - making it unsuitable for data-path buffering.

Availability

CY7C1612KV18-250BZXI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing cache, and test equipment pattern memory requiring stable component supply across extended product lifecycles.

Supply support for CY7C1612KV18-250BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and now owns, manufactures, and supports the full QDR SRAM portfolio including legacy Cypress designs.

This part belongs to Infineon's high-speed interface memory product line, engineered specifically for deterministic, low-latency, concurrent-access buffering in networking, telecom, and test instrumentation systems.

FAQ

What is the function of the DOFF pin on CY7C1612KV18-250BZXI?

The DOFF (Data Output OFFset) pin selects read latency mode: when asserted high, it configures the device for QDR II operation with 1.5-cycle read latency and two-word burst output; when low, it enables QDR I compatibility mode with 1-cycle latency. This setting is sampled synchronously on the rising edge of the K clock at power-up or reset and remains static during operation.

Can CY7C1612KV18-250BZXI operate with only a single clock (K) instead of differential K/K?

Yes - the device supports single-ended clocking where K is driven and K is tied to VSS or VDDQ (per datasheet Section 9). In this mode, both read and write operations use the K clock exclusively, and C/C must also be driven single-ended. However, echo clock (CQ/CQ) functionality and optimal skew cancellation are only available in true differential clock mode.

What is the purpose of the ZQ pin and how must it be connected?

The ZQ pin provides a reference for on-die impedance calibration of HSTL output drivers. It must be connected externally to a precision 240 Ω resistor tied to VSS (ground). This enables automatic adjustment of output driver strength to maintain consistent 50 Ω source termination across process, voltage, and temperature variations - critical for signal integrity at 500 Mbps DDR rates.

Does CY7C1612KV18-250BZXI support byte-level write masking without read-modify-write?

Yes - the device implements four byte write select inputs (BWS[1:0]) that independently enable or disable each 9-bit half-word within the 18-bit D[17:0] bus. When a BWS signal is deasserted (high), the corresponding byte is ignored during the write cycle, preserving existing memory contents. This occurs entirely within the SRAM's self-timed write sequence and requires no external logic or prior read operation.