Infineon Technologies CY7C1612KV18-300BZC

Overview

CY7C1612KV18-300BZC from Infineon Technologies (formerly Cypress) is a 8M × 18, 144-Mbit QDR® II synchronous SRAM with dual independent read/write ports, 300 MHz clock frequency (720 Mbps DDR data rate), 1.8 V core supply, and 1.4–1.8 V I/O supply. It delivers concurrent high-bandwidth memory access for network packet buffering in telecom line cards.

For engineers reviewing the CY7C1612KV18-300BZC datasheet, CY7C1612KV18-300BZC pinout, CY7C1612KV18-300BZC application, or CY7C1612KV18-300BZC equivalent, key selection criteria include its two-word burst architecture, echo clocks (CQ/CQ), DOFF-configurable 1.5-cycle/1-cycle read latency, HSTL-18 I/O compatibility, and 165-ball FBGA (15 × 17 × 1.4 mm) package.

Technical Context

This QDR II SRAM implements fully pipelined, synchronous operation with separate K/K input clocks for address/data capture and C/C output clocks for data launch-enabling precise DDR timing without bus turnaround. Its internal architecture splits the 8M × 18 array into two 4M × 18 sub-arrays to support depth expansion via RPS/WPS control.

The device integrates a PLL for accurate data placement, JTAG 1149.1 boundary scan for testability, and programmable impedance (ZQ) for output driver calibration. Read latency is configurable via DOFF: 1.5 cycles (DOFF = high) or 1 cycle (DOFF = low), directly impacting system timing closure in high-speed switch fabric designs.

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch BGA (15 mm × 17 mm × 1.4 mm, 0.8 mm ball pitch), RoHS-compliant, Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C1612KV18-250BZC, the -300BZC delivers 20% higher bandwidth and tighter timing margins; compared with AS7C3256B-300BIN, it provides true concurrent access, echo-clock timing simplification, and QDR-specific features essential for high-end networking silicon interfaces.

Availability

CY7C1612KV18-300BZC is available at Aetrix Electronics and suitable for network packet buffering, switch fabric memory, and telecom line card buffering requiring stable component supply, long-term lifecycle assurance, and guaranteed traceable sourcing.

Supply support for CY7C1612KV18-300BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-performance memory portfolio, including QDR SRAMs, for demanding infrastructure applications.

CY7C1612KV18 belongs to the QDR® II SRAM product line, engineered specifically for deterministic, high-bandwidth memory interfacing in networking ASICs, FPGA-based switch fabrics, and telecom baseband processors.

FAQ

What is the function of the DOFF pin on CY7C1612KV18-300BZC?

The DOFF (Data Output OFFset) pin configures read latency mode: when asserted high, it enables QDR II mode with 1.5-cycle latency for optimized timing closure in high-frequency systems; when low, it reverts to QDR I–compatible 1-cycle latency. This setting is sampled synchronously on the K clock edge at power-up or reset and remains latched until next reset.

Can CY7C1612KV18-300BZC operate with 1.5 V I/O supply?

Yes - the device supports I/O supply (VDDQ) from 1.4 V to 1.8 V, making it fully compatible with 1.5 V HSTL-18 signaling. Core VDD must remain at 1.8 V ± 0.1 V. Using 1.5 V VDDQ reduces switching power by ~22% versus 1.8 V while maintaining signal integrity per HSTL-18 specifications.

How does the ZQ pin function during system operation?

ZQ connects to an external 240 Ω resistor to ground and enables on-die impedance calibration of output drivers. Calibration occurs automatically at power-up and can be triggered manually via JTAG instruction. It ensures consistent HSTL output drive strength across voltage/temperature variations, critical for signal integrity at 720 Mbps DDR rates.

Is the 165-ball FBGA package of CY7C1612KV18-300BZC compatible with standard reflow profiles?

Yes - the package complies with IPC/JEDEC J-STD-020 moisture sensitivity level 3 and supports standard lead-free reflow profiles (peak temperature ≤ 260 °C). Board layout must observe 0.8 mm ball pitch routing rules and include thermal vias under the die pad for thermal dissipation, especially under sustained 300 MHz operation.