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Infineon Technologies CY7C1612KV18-300BZXC

Part No.:
CY7C1612KV18-300BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1612KV18-300BZXC.pdf
Description:
IC SRAM 144MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,564

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Product details

Overview

CY7C1612KV18-300BZXC from Infineon Technologies (formerly Cypress) is a 8M × 18, 144-Mbit QDR® II synchronous SRAM with two-word burst architecture, 300 MHz clock frequency, 1.8 V core supply, and 1.4–1.8 V I/O supply. It features separate read/write ports, DDR interfaces on both ports (600 Mbps effective data rate), echo clocks (CQ/CQ), and PLL-based timing control - deployed in high-speed networking line cards for packet buffering.

For engineers reviewing the CY7C1612KV18-300BZXC datasheet, CY7C1612KV18-300BZXC pinout, CY7C1612KV18-300BZXC application, or CY7C1612KV18-300BZXC equivalent, key selection criteria include dual-port concurrency, 1.5-cycle read latency (DOFF = high), HSTL-18 I/O compatibility, 165-ball FBGA (15 × 17 mm) package, and JTAG 1149.1 test support.

Technical Context

This QDR II SRAM implements fully independent read and write ports sharing a multiplexed address bus, with address latching on alternate rising edges of K/K clocks. Read and write operations are pipelined and self-timed, enabling concurrent access without bus turnaround.

The device uses dual output clocks (C/C) and echo clocks (CQ/CQ) to compensate for board-level skew, while its internal PLL ensures precise data placement relative to clock edges. DOFF pin selects between 1-cycle (low) and 1.5-cycle (high) read latency modes, directly affecting system timing margin and pipeline depth.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 144 Mbit (8M × 18 organization)
Max Clock Frequency 300 MHz - determines maximum sustained bandwidth of 1.08 GB/s (18-bit × 2 words × 300 MHz)
Core Supply Voltage 1.8 V ± 0.1 V - defines minimum power rail stability requirement for reliable internal array operation
I/O Supply Range 1.4 V to 1.8 V - supports interoperability with 1.5 V or 1.8 V HSTL-18 systems without level shifters
Read Latency Mode Selectable 1-cycle (DOFF = low) or 1.5-cycle (DOFF = high) - impacts controller pipeline staging and setup/hold timing closure
Package 165-ball FBGA (15 × 17 × 1.4 mm) - standard footprint for high-density routing and thermal dissipation in telecom PCBs
Interface Standard HSTL Class I - specifies drive strength, termination, and signal integrity requirements for 300 MHz DDR signaling

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free finish (BZXC suffix).

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous write data input 18-bit parallel data sampled on rising edge of K clock; enables full-word or byte-write via BWS[1:0]
Q[17:0] Synchronous read data output 18-bit parallel data driven on rising edges of C/C clocks; tristated when RPS is deasserted
K / K Positive/negative input clocks Used for address/data capture on write port; K only used for address latching on read port
C / C Positive/negative output clocks Control timing of Q[17:0] output; paired with CQ/CQ for source-synchronous capture at controller
CQ / CQ Echo clocks Replica of C/C delayed by internal path; simplifies controller's DQS-to-clock alignment in high-speed layouts
RPS / WPS Read/write port select Active-low enables port transaction; deselection auto-tristates outputs or ignores inputs
BWS[1:0] Byte write selects Two active-low signals controlling D[8:0] (BWS0) and D[17:9] (BWS1); enables partial-word writes without read-modify-write
DOFF Read latency mode control High = 1.5-cycle latency (QDR II mode); low = 1-cycle latency (QDR I compatibility mode)
VDD / VDDQ Core and I/O supplies VDD = 1.8 V ± 0.1 V; VDDQ = 1.4–1.8 V - requires separate decoupling and plane partitioning
TCK/TMS/TDI/TDO JTAG boundary scan interface IEEE 1149.1 compliant; enables production testing and in-system verification without physical probe access

Key Features

Feature Design Value
Separate read/write ports Enables true concurrent access - eliminates bus turnaround delay and doubles effective throughput vs. common-I/O SRAMs
Two-word burst architecture Every access transfers two adjacent 18-bit words - reduces address strobe overhead and improves cache-line efficiency
DDR interfaces on both ports Delivers 600 Mbps per data line (300 MHz × 2 transitions/cycle) - matches SerDes link rates in switch fabric interfaces
Programmable 1.5-cycle read latency Allows tuning of controller pipeline depth to match board trace delays - critical for timing closure at 300 MHz
HSTL-18 compatible I/O Ensures signal integrity up to 720 Mbps DDR with controlled impedance routing and on-die termination (ZQ calibration)
JTAG 1149.1 test access port Supports automated ICT, boundary scan testing, and in-field diagnostics - reduces test development cost and time

Applications

Network Packet Buffering Switch Fabric Interface

Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/3 Ethernet switches operating at 10 Gbps+ line rates.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as a non-blocking buffer between ingress parser and egress scheduler, synchronized to system clock domain via K/C clocks.

Use Value: Concurrent read/write eliminates arbitration stalls, enabling deterministic 100% line-rate forwarding with sub-100 ns latency.

Use Scenario: Interfacing between multi-lane SerDes receivers and traffic manager ASICs in carrier-grade routers.

IC Role / Device Role / Timing Role: High-bandwidth memory bridge providing elastic buffering for variable-length cell/packet reassembly.

Use Value: 1.5-cycle latency mode aligns with SerDes deserializer output timing, reducing FIFO depth and silicon area in downstream logic.

Telecom Line Card Memory Baseband Processing Buffer

Use Scenario: Real-time buffering of CPRI/OBSAI frames between radio front-end FPGAs and baseband processors in 4G/5G macrocells.

IC Role / Device Role / Timing Role: QDR II SRAM serving as a jitter-tolerant, low-latency frame store with echo clocks (CQ/CQ) referenced by FPGA IDELAYCTRL.

Use Value: CQ/CQ simplifies source-synchronous capture across 16+ data lines, achieving < ±50 ps skew tolerance at 300 MHz.

Use Scenario: Temporary storage of FFT/IFFT intermediate results in massive MIMO digital beamforming units.

IC Role / Device Role / Timing Role: Burst-mode memory supporting parallel 18-bit complex sample processing with minimal pipeline bubbles.

Use Value: Two-word burst delivers 36-bit wide data per cycle - matches typical 16-QAM symbol width and reduces memory access count by 50%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1612KV18-250BZXC Lower max clock (250 MHz); reduced I/O supply current (800 mA vs. 910 mA at 300 MHz) Suitable for cost-sensitive designs where 900 MB/s bandwidth suffices and thermal budget is constrained Select when system clock domain operates ≤250 MHz and board-level timing margin allows relaxed setup/hold windows
AS7C3256A-15JCIN Asynchronous 32K × 8 SRAM; no DDR, no echo clocks, no DOFF latency control; 15 ns access Applicable only in legacy control-plane buffers or low-speed configuration storage - not for data-path concurrency Choose only for non-critical, low-bandwidth auxiliary memory where QDR II features add unnecessary complexity and cost

Compared with CY7C1612KV18-250BZXC, the -300BZXC delivers +20% bandwidth and tighter timing control but requires stricter power delivery and layout; versus AS7C3256A-15JCIN, it enables true concurrent data-path buffering but demands full DDR timing closure and JTAG-aware test infrastructure.

Availability

CY7C1612KV18-300BZXC is available at Aetrix Electronics and suitable for network packet buffering, switch fabric interface, and telecom line card memory requiring stable component supply, long-term lifecycle assurance, and qualified industrial temperature grade (-40°C to +85°C).

Supply support for CY7C1612KV18-300BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains the QDR II SRAM portfolio under its High Performance Memory product line, delivering reliability-focused solutions for infrastructure and industrial applications.

CY7C1612KV18 belongs to Infineon's QDR® II family - engineered specifically for deterministic, low-latency, high-throughput buffering in packet-switched networks, telecom equipment, and real-time signal processing systems.

FAQ

What is the function of the DOFF pin on CY7C1612KV18-300BZXC?

The DOFF (Data Output OFFset) pin selects read latency mode: when high, it enables 1.5-cycle latency (QDR II mode), aligning output data with the second rising edge of C/C after address assertion; when low, it configures 1-cycle latency (QDR I compatibility). This setting directly affects controller pipeline depth and must be fixed at power-up.

Can CY7C1612KV18-300BZXC operate with only a single clock (K) instead of differential K/K?

Yes - the device supports single-clock mode where K serves as both read and write address clock, and C/C are used for output timing. In this mode, K replaces K for write address latching, and all synchronous inputs reference K only. However, differential K/K is required to achieve full 300 MHz performance and minimize jitter-induced timing violations.

How does the ZQ pin function in CY7C1612KV18-300BZXC?

ZQ is a dedicated pin for external reference resistor connection (typically 240 Ω to VSSQ) enabling on-die impedance calibration of HSTL output drivers. This calibration compensates for process/voltage/temperature variations, ensuring consistent 25 Ω or 50 Ω driver impedance and maintaining signal integrity across voltage rails and temperature ranges.

Is CY7C1612KV18-300BZXC pin-compatible with other QDR II devices in the same package?

Yes - CY7C1612KV18-300BZXC shares identical 165-ball FBGA pinout with CY7C1625KV18 and CY7C1614KV18 variants. Address, data, clock, and control pins occupy identical ball positions; only memory depth and width differ (8M×18 vs. 16M×9 vs. 4M×36), allowing drop-in replacement in board designs with appropriate firmware configuration.

CY7C1612KV18-300BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
144Mbit
Memory Organization:
8M x 18
Memory Interface:
Parallel
Clock Frequency:
300 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1612KV18-300BZXC FAQ

1.How can I place an order for CY7C1612KV18-300BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1612KV18-300BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1612KV18-300BZXC reliable?

The price and inventory of CY7C1612KV18-300BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1612KV18-300BZXC is usually 5 days.

3.What payment methods are accepted for CY7C1612KV18-300BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1612KV18-300BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1612KV18-300BZXC?

CY7C1612KV18-300BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1612KV18-300BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1612KV18-300BZXC?

For technical support, including CY7C1612KV18-300BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1612KV18-300BZXC requirements.

6.How does Aetrix verify that CY7C1612KV18-300BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1612KV18-300BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1612KV18-300BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1612KV18-300BZXC?

All CY7C1612KV18-300BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1612KV18-300BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1612KV18-300BZXC part is unused and in its original packaging.

Return procedure for CY7C1612KV18-300BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1612KV18-300BZXC Tags

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