Infineon Technologies CY7C1612KV18-300BZXC
- Part No.:
- CY7C1612KV18-300BZXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1612KV18-300BZXC.pdf
- Description:
- IC SRAM 144MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1612KV18-300BZXC from Infineon Technologies (formerly Cypress) is a 8M × 18, 144-Mbit QDR® II synchronous SRAM with two-word burst architecture, 300 MHz clock frequency, 1.8 V core supply, and 1.4–1.8 V I/O supply. It features separate read/write ports, DDR interfaces on both ports (600 Mbps effective data rate), echo clocks (CQ/CQ), and PLL-based timing control - deployed in high-speed networking line cards for packet buffering.
For engineers reviewing the CY7C1612KV18-300BZXC datasheet, CY7C1612KV18-300BZXC pinout, CY7C1612KV18-300BZXC application, or CY7C1612KV18-300BZXC equivalent, key selection criteria include dual-port concurrency, 1.5-cycle read latency (DOFF = high), HSTL-18 I/O compatibility, 165-ball FBGA (15 × 17 mm) package, and JTAG 1149.1 test support.
Technical Context
This QDR II SRAM implements fully independent read and write ports sharing a multiplexed address bus, with address latching on alternate rising edges of K/K clocks. Read and write operations are pipelined and self-timed, enabling concurrent access without bus turnaround.
The device uses dual output clocks (C/C) and echo clocks (CQ/CQ) to compensate for board-level skew, while its internal PLL ensures precise data placement relative to clock edges. DOFF pin selects between 1-cycle (low) and 1.5-cycle (high) read latency modes, directly affecting system timing margin and pipeline depth.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 144 Mbit (8M × 18 organization) |
| Max Clock Frequency | 300 MHz - determines maximum sustained bandwidth of 1.08 GB/s (18-bit × 2 words × 300 MHz) |
| Core Supply Voltage | 1.8 V ± 0.1 V - defines minimum power rail stability requirement for reliable internal array operation |
| I/O Supply Range | 1.4 V to 1.8 V - supports interoperability with 1.5 V or 1.8 V HSTL-18 systems without level shifters |
| Read Latency Mode | Selectable 1-cycle (DOFF = low) or 1.5-cycle (DOFF = high) - impacts controller pipeline staging and setup/hold timing closure |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm) - standard footprint for high-density routing and thermal dissipation in telecom PCBs |
| Interface Standard | HSTL Class I - specifies drive strength, termination, and signal integrity requirements for 300 MHz DDR signaling |
Pinout & Package
Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free finish (BZXC suffix).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data input | 18-bit parallel data sampled on rising edge of K clock; enables full-word or byte-write via BWS[1:0] |
| Q[17:0] | Synchronous read data output | 18-bit parallel data driven on rising edges of C/C clocks; tristated when RPS is deasserted |
| K / K | Positive/negative input clocks | Used for address/data capture on write port; K only used for address latching on read port |
| C / C | Positive/negative output clocks | Control timing of Q[17:0] output; paired with CQ/CQ for source-synchronous capture at controller |
| CQ / CQ | Echo clocks | Replica of C/C delayed by internal path; simplifies controller's DQS-to-clock alignment in high-speed layouts |
| RPS / WPS | Read/write port select | Active-low enables port transaction; deselection auto-tristates outputs or ignores inputs |
| BWS[1:0] | Byte write selects | Two active-low signals controlling D[8:0] (BWS0) and D[17:9] (BWS1); enables partial-word writes without read-modify-write |
| DOFF | Read latency mode control | High = 1.5-cycle latency (QDR II mode); low = 1-cycle latency (QDR I compatibility mode) |
| VDD / VDDQ | Core and I/O supplies | VDD = 1.8 V ± 0.1 V; VDDQ = 1.4–1.8 V - requires separate decoupling and plane partitioning |
| TCK/TMS/TDI/TDO | JTAG boundary scan interface | IEEE 1149.1 compliant; enables production testing and in-system verification without physical probe access |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write ports | Enables true concurrent access - eliminates bus turnaround delay and doubles effective throughput vs. common-I/O SRAMs |
| Two-word burst architecture | Every access transfers two adjacent 18-bit words - reduces address strobe overhead and improves cache-line efficiency |
| DDR interfaces on both ports | Delivers 600 Mbps per data line (300 MHz × 2 transitions/cycle) - matches SerDes link rates in switch fabric interfaces |
| Programmable 1.5-cycle read latency | Allows tuning of controller pipeline depth to match board trace delays - critical for timing closure at 300 MHz |
| HSTL-18 compatible I/O | Ensures signal integrity up to 720 Mbps DDR with controlled impedance routing and on-die termination (ZQ calibration) |
| JTAG 1149.1 test access port | Supports automated ICT, boundary scan testing, and in-field diagnostics - reduces test development cost and time |
Applications
| Network Packet Buffering | Switch Fabric Interface |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/3 Ethernet switches operating at 10 Gbps+ line rates. IC Role / Device Role / Timing Role: Dual-port SRAM acting as a non-blocking buffer between ingress parser and egress scheduler, synchronized to system clock domain via K/C clocks. Use Value: Concurrent read/write eliminates arbitration stalls, enabling deterministic 100% line-rate forwarding with sub-100 ns latency. |
Use Scenario: Interfacing between multi-lane SerDes receivers and traffic manager ASICs in carrier-grade routers. IC Role / Device Role / Timing Role: High-bandwidth memory bridge providing elastic buffering for variable-length cell/packet reassembly. Use Value: 1.5-cycle latency mode aligns with SerDes deserializer output timing, reducing FIFO depth and silicon area in downstream logic. |
| Telecom Line Card Memory | Baseband Processing Buffer |
|
Use Scenario: Real-time buffering of CPRI/OBSAI frames between radio front-end FPGAs and baseband processors in 4G/5G macrocells. IC Role / Device Role / Timing Role: QDR II SRAM serving as a jitter-tolerant, low-latency frame store with echo clocks (CQ/CQ) referenced by FPGA IDELAYCTRL. Use Value: CQ/CQ simplifies source-synchronous capture across 16+ data lines, achieving < ±50 ps skew tolerance at 300 MHz. |
Use Scenario: Temporary storage of FFT/IFFT intermediate results in massive MIMO digital beamforming units. IC Role / Device Role / Timing Role: Burst-mode memory supporting parallel 18-bit complex sample processing with minimal pipeline bubbles. Use Value: Two-word burst delivers 36-bit wide data per cycle - matches typical 16-QAM symbol width and reduces memory access count by 50%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1612KV18-250BZXC | Lower max clock (250 MHz); reduced I/O supply current (800 mA vs. 910 mA at 300 MHz) | Suitable for cost-sensitive designs where 900 MB/s bandwidth suffices and thermal budget is constrained | Select when system clock domain operates ≤250 MHz and board-level timing margin allows relaxed setup/hold windows |
| AS7C3256A-15JCIN | Asynchronous 32K × 8 SRAM; no DDR, no echo clocks, no DOFF latency control; 15 ns access | Applicable only in legacy control-plane buffers or low-speed configuration storage - not for data-path concurrency | Choose only for non-critical, low-bandwidth auxiliary memory where QDR II features add unnecessary complexity and cost |
Compared with CY7C1612KV18-250BZXC, the -300BZXC delivers +20% bandwidth and tighter timing control but requires stricter power delivery and layout; versus AS7C3256A-15JCIN, it enables true concurrent data-path buffering but demands full DDR timing closure and JTAG-aware test infrastructure.
Availability
CY7C1612KV18-300BZXC is available at Aetrix Electronics and suitable for network packet buffering, switch fabric interface, and telecom line card memory requiring stable component supply, long-term lifecycle assurance, and qualified industrial temperature grade (-40°C to +85°C).
Supply support for CY7C1612KV18-300BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains the QDR II SRAM portfolio under its High Performance Memory product line, delivering reliability-focused solutions for infrastructure and industrial applications.
CY7C1612KV18 belongs to Infineon's QDR® II family - engineered specifically for deterministic, low-latency, high-throughput buffering in packet-switched networks, telecom equipment, and real-time signal processing systems.
FAQ
What is the function of the DOFF pin on CY7C1612KV18-300BZXC?
The DOFF (Data Output OFFset) pin selects read latency mode: when high, it enables 1.5-cycle latency (QDR II mode), aligning output data with the second rising edge of C/C after address assertion; when low, it configures 1-cycle latency (QDR I compatibility). This setting directly affects controller pipeline depth and must be fixed at power-up.
Can CY7C1612KV18-300BZXC operate with only a single clock (K) instead of differential K/K?
Yes - the device supports single-clock mode where K serves as both read and write address clock, and C/C are used for output timing. In this mode, K replaces K for write address latching, and all synchronous inputs reference K only. However, differential K/K is required to achieve full 300 MHz performance and minimize jitter-induced timing violations.
How does the ZQ pin function in CY7C1612KV18-300BZXC?
ZQ is a dedicated pin for external reference resistor connection (typically 240 Ω to VSSQ) enabling on-die impedance calibration of HSTL output drivers. This calibration compensates for process/voltage/temperature variations, ensuring consistent 25 Ω or 50 Ω driver impedance and maintaining signal integrity across voltage rails and temperature ranges.
Is CY7C1612KV18-300BZXC pin-compatible with other QDR II devices in the same package?
Yes - CY7C1612KV18-300BZXC shares identical 165-ball FBGA pinout with CY7C1625KV18 and CY7C1614KV18 variants. Address, data, clock, and control pins occupy identical ball positions; only memory depth and width differ (8M×18 vs. 16M×9 vs. 4M×36), allowing drop-in replacement in board designs with appropriate firmware configuration.
CY7C1612KV18-300BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 144Mbit
- Memory Organization:
- 8M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 300 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1612KV18-300BZXC FAQ
1.How can I place an order for CY7C1612KV18-300BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1612KV18-300BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1612KV18-300BZXC reliable?
The price and inventory of CY7C1612KV18-300BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1612KV18-300BZXC is usually 5 days.
3.What payment methods are accepted for CY7C1612KV18-300BZXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1612KV18-300BZXC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1612KV18-300BZXC?
CY7C1612KV18-300BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1612KV18-300BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1612KV18-300BZXC?
For technical support, including CY7C1612KV18-300BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1612KV18-300BZXC requirements.
6.How does Aetrix verify that CY7C1612KV18-300BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1612KV18-300BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1612KV18-300BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1612KV18-300BZXC?
All CY7C1612KV18-300BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1612KV18-300BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1612KV18-300BZXC part is unused and in its original packaging.
Return procedure for CY7C1612KV18-300BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1612KV18-300BZXC Tags

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