Infineon Technologies CY7C1612KV18-300BZXI

Overview

CY7C1612KV18-300BZXI from Infineon Technologies (formerly Cypress) is a 8M × 18, 144-Mbit QDR® II synchronous SRAM with two-word burst architecture, 300 MHz clock frequency, 1.8 V core supply, and 1.4–1.8 V I/O supply. It features separate read/write ports, DDR interfaces on both ports (600 Mbps per pin), echo clocks (CQ/CQ), and PLL-based timing control - deployed in high-speed network packet buffers and baseband data path memory.

For engineers reviewing the CY7C1612KV18-300BZXI datasheet, CY7C1612KV18-300BZXI pinout, CY7C1612KV18-300BZXI application, or CY7C1612KV18-300BZXI equivalent, key selection criteria include 300 MHz operation with 1.5-cycle read latency (DOFF = high), 165-ball FBGA package compatibility, byte-write select (BWS[1:0]) support for partial writes, and JTAG 1149.1 test access for system-level validation.

Technical Context

This QDR II SRAM implements fully independent read and write ports sharing a multiplexed address bus, with addresses latched on alternate rising edges of K/K clocks. Read and write operations are pipelined and self-timed, enabling concurrent transactions without bus turnaround.

The device uses dual output clocks (C/C) to deskew data flight times and echo clocks (CQ/CQ) to simplify high-speed capture at the controller. Its PLL ensures precise data placement relative to C/C edges, while DOFF pin selects between 1-cycle (QDR I mode) and 1.5-cycle (QDR II mode) read latency.

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm body, RoHS-compliant Pb-free construction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C1612KV18-300BZXI, the -333 variant trades higher power and layout complexity for +11% bandwidth, while the -250 variant sacrifices 17% peak throughput for broader timing margin and lower thermal load - enabling direct substitution only within validated frequency and power envelopes.

Availability

CY7C1612KV18-300BZXI is available at Aetrix Electronics and suitable for network packet buffering, baseband data path memory, and switch fabric lookup table applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for CY7C1612KV18-300BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-performance memory portfolio, including QDR SRAMs, with global manufacturing, quality, and support infrastructure.

CY7C1612KV18 belongs to Infineon's QDR® II SRAM product line, designed specifically for deterministic, low-latency, high-bandwidth memory subsystems in networking, telecom infrastructure, and test equipment.

FAQ

What is the function of the DOFF pin on CY7C1612KV18-300BZXI?

The DOFF (Data Output OFFset) pin configures read latency mode: when asserted high, it enables QDR II mode with 1.5-cycle read latency for improved timing margin; when low, it selects QDR I mode with 1-cycle latency for minimal delay. This setting is sampled synchronously on the rising edge of the K clock during initialization and remains active until changed.

Can CY7C1612KV18-300BZXI operate with 1.5 V VDDQ supply?

Yes - the device supports VDDQ from 1.4 V to 1.8 V, including 1.5 V. At 1.5 V, it meets all AC timing specifications at 300 MHz and drives HSTL Class I-compatible outputs. System designers must ensure stable 1.5 V regulation and proper termination matching (typically 25 Ω to VTT = 0.75 V) for signal integrity.

How does the BWS[1:0] signal control byte writes in CY7C1612KV18-300BZXI?

BWS[1:0] are active-low byte write selects: BWS0 controls D[8:0], BWS1 controls D[17:9]. When either is deasserted (high), the corresponding 9-bit byte is masked and unchanged during the write cycle. Both can be asserted simultaneously for full 18-bit writes, or individually for partial updates - essential for maintaining coherency in multi-field memory structures.

Is JTAG boundary scan supported on CY7C1612KV18-300BZXI, and how is it enabled?

Yes - the device implements IEEE 1149.1 JTAG test access port with TDI, TDO, TCK, and TMS pins. JTAG is enabled by default at power-up; no configuration is required. Boundary scan testing follows standard TAP controller states and supports identification, interconnect, and cluster testing per the device's documented scan chain and instruction set.