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Infineon Technologies CY7C1612KV18-333BZC

Part No.:
CY7C1612KV18-333BZC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1612KV18-333BZC.pdf
Description:
IC SRAM 144MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,452

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Product details

Overview

CY7C1612KV18-333BZC from Infineon Technologies (formerly Cypress) is a 8M × 18, 144-Mbit QDR® II SRAM with two-word burst architecture, 333 MHz clock frequency, 1.8 V core supply, and 1.4–1.8 V I/O supply. It delivers 720 Mbps DDR data transfer on independent read/write ports and supports concurrent transactions in high-speed networking buffers, packet classification engines, and FPGA-based protocol accelerators.

For engineers reviewing the CY7C1612KV18-333BZC datasheet, CY7C1612KV18-333BZC pinout, CY7C1612KV18-333BZC application, or CY7C1612KV18-333BZC equivalent, key selection criteria include its 333 MHz operation with 1.5-cycle read latency (DOFF = high), 165-ball FBGA package, HSTL-compatible outputs, echo clocks (CQ/CQ), and JTAG 1149.1 test access port for system-level validation.

Technical Context

This QDR II SRAM implements fully synchronous, pipelined memory access with physically separate read and write data paths-eliminating bus turnaround overhead. Its dual-clock domain uses K/K for address/data capture and C/C for output timing, enabling precise DDR edge alignment and skew compensation via echo clocks.

The device integrates a PLL for accurate internal data placement, supports depth expansion via RPS/WPS and BWS[1:0] controls, and provides full data coherency through synchronous self-timed writes. It operates in single-clock mode (K = C) or dual-clock mode (independent K/C domains), with configurable DOFF pin selecting between 1-cycle (DOFF = low) and 1.5-cycle (DOFF = high) read latency.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 144 Mbit (8M × 18 organization)
Max Clock Frequency 333 MHz - enables 666 MT/s effective throughput per port
Data Rate 720 Mbps DDR - transfers two 18-bit words per clock cycle on each port
Core Supply 1.8 V ±0.1 V - defines minimum power rail stability requirement for reliable internal timing
I/O Supply Range 1.4 V to 1.8 V - supports interoperability with both 1.5 V and 1.8 V HSTL logic families
Read Latency 1.5 cycles (DOFF = high) or 1 cycle (DOFF = low) - directly impacts pipeline depth in controller design
Package 165-ball FBGA (15 × 17 × 1.4 mm) - standard footprint for high-density PCB routing and thermal management

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm body height, RoHS-compliant Pb-free option available.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous write data input 18-bit parallel data sampled on rising edge of K clock; latched for two-word burst write
Q[17:0] Synchronous read data output 18-bit parallel data driven on rising edges of C/C clocks; tristated when RPS inactive
RPS Read port select (active low) Enables read transaction; deassertion initiates automatic tristate after next C edge
WPS Write port select (active low) Enables write transaction; deassertion ignores D[17:0] and BWS signals
BWS[1:0] Byte write select (active low) BWS0 controls D[8:0], BWS1 controls D[17:9]; enables partial-word writes without read-modify-write
K / K Positive/negative input clocks Used for address and write-data capture; K only used for rising-edge sampling in all modes
C / C Positive/negative output clocks Drive Q[17:0] outputs; paired with echo clocks (CQ/CQ) for receiver deskewing
CQ / CQ Echo clocks (output) Replicate C/C timing at receiver side to compensate for board trace skew and flight time mismatch
DOFF Read latency control High = 1.5-cycle latency (QDR II mode); low = 1-cycle latency (QDR I compatibility mode)
VREF Reference voltage input Provides mid-supply reference for HSTL input threshold; must be externally decoupled
ZQ Impedance calibration terminal Connects to external 240 Ω resistor for programmable output driver impedance tuning
TCK/TMS/TDI/TDO JTAG boundary scan interface IEEE 1149.1 compliant; enables in-system test, debug, and configuration verification

Key Features

Feature Design Value
Independent read/write ports Eliminates bus turnaround delay-enables true concurrent access for real-time packet buffering
Two-word burst architecture Guarantees sequential 18-bit word delivery per access-reduces address bus toggling and controller overhead
HSTL Class I/II compatible outputs Ensures signal integrity at 720 Mbps with controlled slew rate and on-die termination support via ZQ
Programmable impedance calibration ZQ pin enables dynamic output driver impedance matching to PCB trace impedance-improves eye diagram margin
Integrated PLL for data placement Aligns internal data launch timing to external clock edges-reduces setup/hold timing margin requirements
JTAG 1149.1 test access port Supports boundary scan testing, interconnect validation, and in-circuit programming without physical probe access

Applications

Network Packet Buffer FPGA-Based Protocol Accelerator

Use Scenario: Storing ingress/egress packets in 10G/25G Ethernet line cards where deterministic latency and zero bus contention are required.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as first-level packet buffer with simultaneous write (ingress) and read (egress) operations synchronized to separate clocks.

Use Value: 333 MHz operation with 1.5-cycle read latency ensures sub-5 ns access time while maintaining full bandwidth under sustained 10 Gbps traffic load.

Use Scenario: Offloading TCP/IP checksum, encryption, or header parsing in FPGA-accelerated smart NICs requiring high-throughput memory access.

IC Role / Device Role / Timing Role: High-bandwidth scratchpad memory interfaced directly to FPGA fabric via dedicated read/write data buses and echo-clocked outputs.

Use Value: Independent DDR ports eliminate arbitration logic, reducing FPGA resource usage by ~12% compared to single-port DDR3 SDRAM interfaces.

Telecom Baseband Processing Real-Time Video Frame Buffer

Use Scenario: Storing intermediate FFT or channel estimation results in LTE/5G baseband units where memory access must not stall DSP pipelines.

IC Role / Device Role / Timing Role: Low-latency, coherency-guaranteed memory accessed concurrently by multiple DSP cores via depth-expanded banks.

Use Value: Full data coherency and synchronous self-timed writes ensure consistent data visibility across read/write ports without software synchronization overhead.

Use Scenario: Buffering uncompressed 4K60 YUV422 video streams in broadcast production switchers requiring glitch-free frame switching.

IC Role / Device Role / Timing Role: Dual-port frame buffer with write port capturing sensor data and read port feeding display engine-both operating at pixel-clock-aligned rates.

Use Value: Echo clocks (CQ/CQ) enable precise source-synchronous capture at 720 Mbps, achieving >85% eye opening at 40 cm FR4 trace length.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1612KV18-300BZC Lower max clock (300 MHz) → 600 Mbps DDR; reduced IDD (910 mA vs. 970 mA at ×18) Suitable for cost-sensitive telecom modules where 333 MHz headroom is unnecessary Select when system timing margin allows relaxed frequency and lower power consumption is prioritized
AS7C3256A-15JCIN Asynchronous 32K × 8 SRAM; no DDR, no echo clocks, no QDR architecture Limited to low-bandwidth control-plane storage-not viable for data-plane buffering Only consider for non-real-time configuration memory where QDR features provide no benefit

Compared with CY7C1612KV18-300BZC, the -333BZC offers 11% higher bandwidth and tighter timing margins; versus AS7C3256A-15JCIN, it provides architecturally distinct concurrent access, DDR signaling, and echo-clock timing-making it irreplaceable in high-speed data-path applications.

Availability

CY7C1612KV18-333BZC is available at Aetrix Electronics and suitable for network packet buffering, FPGA-based protocol acceleration, and telecom baseband processing requiring stable component supply across multi-year production cycles.

Supply support for CY7C1612KV18-333BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, sensors, and memory solutions for industrial, automotive, and communications markets.

CY7C1612KV18-333BZC belongs to Infineon's QDR II SRAM product line, designed specifically for high-bandwidth, low-latency data-path buffering in networking infrastructure and real-time signal processing systems.

FAQ

What is the function of the DOFF pin on CY7C1612KV18-333BZC?

The DOFF (Data Output OFFset) pin configures read latency mode: when asserted high, it enables QDR II mode with 1.5-cycle latency for optimized burst efficiency; when low, it reverts to QDR I compatibility mode with 1-cycle latency. This setting is sampled synchronously on the K clock edge at power-up or during reset and remains latched until next reset.

Can CY7C1612KV18-333BZC operate with only one clock signal?

Yes-it supports single-clock mode where K is used for both address/data capture and output timing (C = K, C = K). In this mode, echo clocks (CQ/CQ) remain functional for deskewing, but the device loses independent read/write timing flexibility. All timing parameters shift to align with the single clock domain, and maximum frequency may be limited by combined path constraints.

How does the ZQ pin enable impedance calibration?

The ZQ pin connects to an external 240 Ω precision resistor to ground, allowing the device to calibrate internal output driver impedance to match PCB trace impedance (typically 50 Ω single-ended or 100 Ω differential). Calibration occurs automatically at power-up and can be triggered manually via JTAG instruction, ensuring consistent signal integrity across voltage/temperature variations.

Is JTAG boundary scan supported on CY7C1612KV18-333BZC?

Yes-the device implements full IEEE 1149.1 JTAG functionality with TCK, TMS, TDI, and TDO pins. It supports mandatory instructions (SAMPLE/PRELOAD, EXTEST, BYPASS) and optional ones (IDCODE, CLAMP, HIGHZ), enabling interconnect testing, I/O pin state verification, and in-system programming of configuration registers without requiring additional test fixtures.

CY7C1612KV18-333BZC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Last Time Buy
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
144Mbit
Memory Organization:
8M x 18
Memory Interface:
Parallel
Clock Frequency:
333 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1612KV18-333BZC FAQ

1.How can I place an order for CY7C1612KV18-333BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1612KV18-333BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1612KV18-333BZC reliable?

The price and inventory of CY7C1612KV18-333BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1612KV18-333BZC is usually 5 days.

3.What payment methods are accepted for CY7C1612KV18-333BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1612KV18-333BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1612KV18-333BZC?

CY7C1612KV18-333BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1612KV18-333BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1612KV18-333BZC?

For technical support, including CY7C1612KV18-333BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1612KV18-333BZC requirements.

6.How does Aetrix verify that CY7C1612KV18-333BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1612KV18-333BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1612KV18-333BZC meets industry standards.

7.What is the process for return or replacement of CY7C1612KV18-333BZC?

All CY7C1612KV18-333BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1612KV18-333BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1612KV18-333BZC part is unused and in its original packaging.

Return procedure for CY7C1612KV18-333BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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