Infineon Technologies CY7C1612KV18-333BZXC

Overview

CY7C1612KV18-333BZXC from Infineon Technologies (formerly Cypress) is a 8M × 18, 144-Mbit QDR® II SRAM with synchronous pipelined architecture, 333 MHz clock frequency, 1.8 V core supply, 1.4–1.8 V I/O supply, and 165-ball FBGA (15 × 17 × 1.4 mm) package. It delivers 720 MT/s DDR throughput on independent read/write ports for high-bandwidth packet buffering in network line cards.

For engineers reviewing the CY7C1612KV18-333BZXC datasheet, CY7C1612KV18-333BZXC pinout, CY7C1612KV18-333BZXC application, or CY7C1612KV18-333BZXC equivalent, key selection criteria include its two-word burst capability, echo clocks (CQ/CQ), DOFF-configurable 1.5-cycle/1-cycle read latency, HSTL-compatible outputs, and JTAG 1149.1 test access support.

Technical Context

This QDR II SRAM implements fully independent read and write ports sharing a single multiplexed address bus, with addresses latched on alternate rising edges of K/K clocks. Read and write data paths are physically separate-eliminating bus turnaround-and both operate at double data rate using dedicated C/C and K/K clock pairs.

The device integrates a PLL for precise data placement, supports depth expansion via RPS/WPS and BWS[1:0], and uses synchronous self-timed writes. Its 1.5-cycle read latency (DOFF = high) or 1-cycle latency (DOFF = low) enables flexible timing alignment in high-speed switch fabric and memory controller designs.

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm body, RoHS-compliant, Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C1612KV18-333BZXC, the -300BZXC variant trades 33 MHz bandwidth for lower power and thermal load, while AS7C3256A-15JCIN lacks all QDR II architectural advantages - making it incompatible for concurrent read/write or echo-clock–dependent timing-critical applications.

Availability

CY7C1612KV18-333BZXC is available at Aetrix Electronics and suitable for network packet buffering, switch fabric memory, telecom baseband processing, and test equipment memory subsystems requiring stable component supply across extended product lifecycles.

Supply support for CY7C1612KV18-333BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, sensors, automotive ICs, and memory solutions - formed through the acquisition of Cypress Semiconductor in 2020.

CY7C1612KV18 belongs to Infineon's QDR® II SRAM product line, engineered specifically for high-bandwidth, low-latency memory interfacing in networking, telecommunications, and test instrumentation where deterministic dual-port access is mandatory.

FAQ

What is the function of the DOFF pin on CY7C1612KV18-333BZXC?

The DOFF (Data Output OFFset) pin configures read latency mode: when asserted high, it enables QDR II mode with 1.5-cycle latency for optimized timing margin in high-frequency systems; when low, it reverts to QDR I compatibility mode with 1-cycle latency. This pin is sampled synchronously on the K clock edge and directly affects the C/C-to-Q[17:0] timing relationship - no external configuration register is required.

Can CY7C1612KV18-333BZXC operate with only a single clock domain?

Yes - the device supports single-clock mode where K and C are tied together (and K and C tied together), simplifying system clock distribution. In this mode, data is clocked using K/K for both address/control and Q[17:0] outputs. However, echo clock (CQ/CQ) functionality and optimal skew compensation require separate C/C generation, so single-clock mode sacrifices some timing margin at 333 MHz.

How does byte write select (BWS) work for the 18-bit data width?

BWS[1:0] provides independent control over two 9-bit subwords: BWS0 gates D[8:0], and BWS1 gates D[17:9]. Both are active-low and sampled synchronously with D[17:0] on the K clock. When either BWS is deasserted, the corresponding 9-bit segment remains unaltered during the write - enabling efficient partial-word updates without read-modify-write cycles or external logic.

Is the 165-ball FBGA package of CY7C1612KV18-333BZXC compatible with standard reflow profiles?

Yes - the package complies with IPC/JEDEC J-STD-020D moisture sensitivity level 3 and supports standard lead-free reflow profiles (peak temperature ≤ 260 °C). The 0.8 mm ball pitch and 15 × 17 mm footprint are supported by mainstream PCB fabrication and assembly processes; recommended stencil aperture ratio is 0.66 for reliable solder paste release and void minimization.