Infineon Technologies CY7C1613KV18-300BZXC
- Part No.:
- CY7C1613KV18-300BZXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1613KV18-300BZXC.pdf
- Description:
- IC SRAM 144MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:1,690
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Product details
Overview
CY7C1613KV18-300BZXC from Cypress Semiconductor is a 144-Mbit QDR® II SRAM with 8 M × 18 organization, 300 MHz maximum clock frequency, 1.8 V core supply, and 1.4–1.8 V I/O supply. It features separate read/write ports, four-word burst architecture, and DDR interfaces on both ports for concurrent high-bandwidth memory access in network packet buffers and switching fabric controllers.
For engineers reviewing the CY7C1613KV18-300BZXC datasheet, CY7C1613KV18-300BZXC pinout, CY7C1613KV18-300BZXC application, or CY7C1613KV18-300BZXC equivalent, key selection criteria include its 1.5-cycle read latency (DOFF = high), echo clock support (CQ/CQ), HSTL-compatible outputs, and 165-ball FBGA package compatibility with depth expansion via RPS/WPS controls.
Technical Context
The device implements true quad data rate operation using independent K/K clocks for address/data capture and C/C clocks for output timing, enabling simultaneous read and write transactions without bus turnaround. Its internal pipelined architecture supports synchronous self-timed writes and full data coherency across all four-word bursts.
It integrates a PLL for precise data placement, JTAG 1149.1 TAP for boundary scan testing, and programmable output impedance via ZQ pin tied to external resistor or VDDQ. The DOFF pin selects between QDR II mode (1.5-cycle latency) and QDR I mode (1-cycle latency), allowing system-level timing flexibility.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 144 Mbit (8 M × 18) |
| Max Clock Frequency | 300 MHz - determines peak bandwidth of 2.16 GB/s (300 MHz × 4 words × 18 bits × 2 edges) |
| Read Latency | 1.5 cycles (DOFF = high) - enables tighter timing closure in high-speed switch ASIC interfaces |
| Core Supply Voltage | 1.8 V ±0.1 V - requires low-noise 1.8 V regulator with tight tolerance for stable SRAM operation |
| I/O Supply Range | 1.4 V to 1.8 V - supports interoperability with 1.5 V or 1.8 V HSTL-18/15 systems |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm) - standard footprint for high-density routing in telecom line cards |
| Output Interface | HSTL Class I - ensures signal integrity at 600+ Mbps per pin with controlled slew and termination |
Pinout & Package
Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm body, RoHS-compliant Pb-free construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data inputs | Latched on rising edge of K/K; supports byte-write via BWS0/BWS1 for partial word updates |
| Q[17:0] | Synchronous read data outputs | Driven on rising edge of C/C; tristated when RPS is deasserted |
| RPS, WPS | Active-low port select controls | Enable independent read/write port activation; essential for depth expansion and bank isolation |
| K, K | Positive/negative input clocks | Capture all synchronous inputs; K used for address latching and write initiation |
| C, C | Positive/negative output clocks | Control Q[17:0] timing; used with CQ/CQ to deskew flight time across multi-device buses |
| CQ, CQ | Echo clocks referenced to C/C | Free-running, synchronized to output clocks; simplify high-speed data capture at controller side |
| ZQ | Output impedance calibration input | Connects to external resistor to ground to tune Q/CQ output drive strength to 0.2 × RQ |
| DOFF | Read latency mode control | High = QDR II mode (1.5-cycle latency); low = QDR I mode (1-cycle latency) |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write ports | Eliminates data bus turnaround, enabling true concurrent read/write at full bandwidth |
| Four-word burst architecture | Reduces effective address bus frequency by 4×, easing PCB routing and timing closure |
| DDR interfaces on both ports | Delivers 600 Mbps per pin (300 MHz × 2 edges) without requiring source-synchronous strobes |
| Programmable output impedance (ZQ) | Enables dynamic matching to board trace impedance, reducing reflections and jitter |
| JTAG 1149.1 compliance | Supports IEEE boundary scan for production test and interconnect verification in dense layouts |
Applications
| Network Switching Fabric | Precision Timing Buffer |
|---|---|
|
Use Scenario: Storing and forwarding variable-length packet headers in 10G/25G Ethernet line cards. IC Role / Device Role / Timing Role: High-throughput, low-latency buffer between ingress parser and egress scheduler ASICs. Use Value: Concurrent read/write eliminates arbitration delay; 1.5-cycle latency aligns with switch fabric clock domains. |
Use Scenario: Holding timestamped event records in precision time protocol (PTP) grandmaster clocks. IC Role / Device Role / Timing Role: Synchronous dual-port storage for time-stamped metadata with deterministic access timing. Use Value: Echo clocks (CQ/CQ) enable sub-100 ps capture margin at 300 MHz, critical for sub-nanosecond timestamp accuracy. |
| Telecom Baseband Processing | High-Speed Test Equipment Memory |
|
Use Scenario: Interleaving IQ samples between digital front-end and FFT processing blocks in 5G NR base stations. IC Role / Device Role / Timing Role: Burst-mode data staging buffer with independent read/write addressing for pipeline decoupling. Use Value: Four-word burst matches typical FFT bin size; HSTL outputs maintain signal integrity over 10+ cm backplane traces. |
Use Scenario: Capturing real-time waveform data in automated test equipment (ATE) pattern generators. IC Role / Device Role / Timing Role: Deterministic-access memory for stimulus/response storage with minimal jitter-induced timing uncertainty. Use Value: PLL-based clock alignment and DOFF-selectable latency allow precise synchronization to ATE master clock domains. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10BG | 36-bit × 4 M, 10 ns access, LVDS interface, no echo clocks | Designed for legacy telecom systems with parallel LVDS buses; lacks QDR II burst and CQ timing aids | Select when interfacing with older FPGA families lacking HSTL support or requiring simpler timing models |
| ISSI IS61WV102418BLL-15BLI | 1024K × 18, 15 ns async SRAM, single-port, 3.3 V only | Asynchronous operation; no concurrent access, no DDR, no burst - suitable only for low-speed control-plane buffering | Choose only for cost-sensitive, non-real-time applications where bandwidth < 200 MB/s suffices |
Compared with IDT72T3615L10BG and IS61WV102418BLL-15BLI, CY7C1613KV18-300BZXC delivers 10× higher sustained bandwidth, deterministic latency control via DOFF, and built-in signal integrity features (CQ, ZQ, HSTL) essential for 10G+ system designs.
Availability
CY7C1613KV18-300BZXC is available at Aetrix Electronics and suitable for network switching fabric, telecom baseband processing, and high-speed test equipment requiring stable component supply, long-term lifecycle assurance, and consistent FBGA packaging.
Supply support for CY7C1613KV18-300BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
CY7C1613KV18 belongs to Cypress's QDR II SRAM product line, engineered specifically for deterministic, high-bandwidth memory access in packet-switched infrastructure where concurrent read/write throughput and sub-cycle timing predictability are critical.
FAQ
What is the function of the DOFF pin on CY7C1613KV18-300BZXC?
The DOFF (Data Output OFFset) pin configures read latency mode: when asserted high, it enables QDR II operation with 1.5-cycle read latency; when low, it reverts to QDR I behavior with 1-cycle latency. This allows system designers to trade off latency against timing margin without changing hardware layout or clocking scheme.
How does the ZQ pin affect output drive strength?
The ZQ pin connects to an external resistor to ground (typically 240 Ω) to calibrate output driver impedance to 0.2 × RQ (e.g., 48 Ω). This matches the SRAM's HSTL outputs to PCB trace impedance, minimizing signal reflections and jitter. Connecting ZQ directly to VDDQ enables minimum-impedance mode (≈24 Ω), while leaving it unconnected or grounded violates specifications.
Can CY7C1613KV18-300BZXC operate with only one clock domain?
Yes - the device supports single-clock mode where K and C are tied together (and K and C tied together), simplifying clock distribution. In this mode, all synchronous inputs and outputs reference K/K, and echo clocks CQ/CQ derive from K. However, dual-clock operation is required to achieve full QDR II performance and deskew capability.
What is the purpose of the BWS0 and BWS1 pins?
BWS0 and BWS1 are active-low byte write select signals that control which 9-bit segments of D[17:0] are written during each burst cycle: BWS0 enables D[8:0], BWS1 enables D[17:9]. When both are deasserted, no data is written; when only one is active, only its corresponding byte group updates - preserving other bits in the 18-bit word.
CY7C1613KV18-300BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 144Mbit
- Memory Organization:
- 8M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 300 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1613KV18-300BZXC FAQ
1.How can I place an order for CY7C1613KV18-300BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1613KV18-300BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1613KV18-300BZXC reliable?
The price and inventory of CY7C1613KV18-300BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1613KV18-300BZXC is usually 5 days.
3.What payment methods are accepted for CY7C1613KV18-300BZXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1613KV18-300BZXC transactions.
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CY7C1613KV18-300BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1613KV18-300BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1613KV18-300BZXC?
For technical support, including CY7C1613KV18-300BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1613KV18-300BZXC requirements.
6.How does Aetrix verify that CY7C1613KV18-300BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1613KV18-300BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1613KV18-300BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1613KV18-300BZXC?
All CY7C1613KV18-300BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1613KV18-300BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1613KV18-300BZXC part is unused and in its original packaging.
Return procedure for CY7C1613KV18-300BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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