Infineon Technologies CY7C1614KV18-250BZI

Overview

CY7C1614KV18 from Infineon Technologies (formerly Cypress) is a 4M × 36, 144-Mbit QDR® II synchronous SRAM with two-word burst architecture, 250 MHz maximum clock frequency (400 ps cycle time), 1.8 V core supply, and 1.4–1.8 V I/O supply. It features separate read/write ports, DDR interfaces on both ports, echo clocks (CQ/CQ), and PLL-based timing control for high-bandwidth networking buffer applications.

For engineers reviewing the CY7C1614KV18 datasheet, CY7C1614KV18 pinout, CY7C1614KV18 application, or CY7C1614KV18 equivalent, this device is selected for deterministic low-latency memory buffering in packet-switched infrastructure where concurrent read/write throughput, precise data capture via echo clocks, and depth expansion via port selects are required.

Technical Context

The CY7C1614KV18 implements QDR II architecture with fully independent read and write ports sharing a multiplexed 21-bit address bus (A[20:0]), enabling true concurrent transactions without bus turnaround. Its 36-bit data width (D[35:0]/Q[35:0]) supports two sequential 36-bit words per access, latched on alternate rising edges of K/K clocks.

It uses dual differential output clocks (C/C) and echo clocks (CQ/CQ) to minimize skew between controller and memory, while the integrated PLL ensures accurate data placement at 250 MHz operation. Byte write select signals (BWS[3:0]) provide granular 9-bit byte-level write control across the 36-bit interface.

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm body height, RoHS-compliant Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C1612KV18, the CY7C1614KV18 delivers double the per-cycle data throughput (72 vs. 36 bits) at identical density, while AS7C3256B-25JCIN lacks all QDR II timing mechanisms - making it unsuitable for any application requiring deterministic 250 MHz dual-port operation.

Availability

CY7C1614KV18 is available at Aetrix Electronics and suitable for network packet buffering, switch fabric memory, and telecom line card buffering requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.

Supply support for CY7C1614KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains full product continuity, documentation, and support for the QDR II SRAM portfolio originally developed by Cypress.

This device belongs to Infineon's high-performance memory product line, designed specifically for deterministic, low-latency, high-bandwidth buffering in carrier-grade networking and telecom infrastructure.

FAQ

What is the function of the DOFF pin on CY7C1614KV18?

The DOFF (Data Output OFFset) pin selects read latency mode: when asserted high, it configures 1.5-cycle read latency for improved timing margin in high-skew systems; when low, it enables 1-cycle latency for minimal delay. This setting directly affects the number of clock cycles between address assertion and valid Q[35:0] output, and must be set before initialization.

Can CY7C1614KV18 operate with only a single clock domain?

Yes - the device supports single-clock mode where K and K are tied together and C and C are tied together, eliminating need for differential clock generation. In this mode, data is latched and driven on the same clock edges, reducing system clocking complexity at the cost of reduced skew tolerance compared to differential operation.

How does the ZQ pin enable on-die termination calibration?

The ZQ pin connects to a 240 Ω external reference resistor to ground. During calibration, internal circuitry measures this resistance and adjusts output driver impedance to match - achieving ±15% accuracy. This eliminates discrete termination resistors and maintains consistent HSTL-15/18 signal integrity across voltage and temperature variations.

What is the role of BWS[3:0] during a write operation?

BWS[3:0] are active-low byte write selects that gate individual 9-bit segments of the 36-bit D[35:0] bus. When a BWS bit is deasserted (high), its corresponding 9-bit byte is ignored during the write cycle, preserving existing memory contents in those bits - enabling efficient partial writes without read-modify-write sequences.