Infineon Technologies CY7C1618KV18-300BZXC

Overview

CY7C1618KV18-300BZXC from Infineon Technologies (formerly Cypress) is a 144-Mbit DDR II SRAM with 8M × 18 organization, 333 MHz clock support, 666 MHz effective data rate, and 1.8-V core supply. It implements two-word burst architecture with echo clocks (CQ/CQ), dual input clocks (K/K), and programmable output drive for high-speed memory buffering in networking line cards and packet processors.

For engineers reviewing the CY7C1618KV18-300BZXC datasheet, CY7C1618KV18-300BZXC pinout, CY7C1618KV18-300BZXC application, or CY7C1618KV18-300BZXC equivalent, key selection criteria include DDR II read latency (1.5-cycle with DOFF high), HSTL I/O compatibility (1.4–1.8 V), JTAG 1149.1 test access, and 165-ball FBGA (15 × 17 × 1.4 mm) package thermal and routing constraints.

Technical Context

This SRAM uses synchronous pipelined architecture with internal self-timed writes and a 1-bit burst counter driven by A0. Address latching occurs on alternating rising edges of K and K, enabling two-word burst transfers without external address toggling between words.

The device supports dual-clock domain operation: K/K control all synchronous inputs and write data capture, while C/C govern read data output timing and enable flight-time deskewing. Echo clocks CQ/CQ are phase-aligned to C/C and simplify system-level data capture without per-device timing margining.

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, Pb-free, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR II SRAM applications.

Compared with AS7C3256A-15JCIN and IS61WV102418BLL-10BLI, CY7C1618KV18-300BZXC uniquely delivers DDR II timing, echo-clock–assisted data capture, and configurable latency-enabling deterministic 1.2 GB/s throughput in systems where asynchronous or single-data-rate alternatives would bottleneck real-time data paths.

Availability

CY7C1618KV18-300BZXC is available at Aetrix Electronics and suitable for telecom line card buffering, network packet processor caching, and industrial real-time control applications requiring stable component supply, long-lifecycle support, and Pb-free compliance.

Supply support for CY7C1618KV18-300BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-performance memory portfolio, including DDR II SRAMs engineered for infrastructure and industrial applications demanding reliability and longevity.

CY7C1618KV18-300BZXC belongs to Infineon's legacy Cypress DDR II SRAM product line, designed specifically for high-bandwidth, low-latency buffering in telecom, networking, and real-time embedded systems where deterministic timing and signal integrity are critical.

FAQ

What is the function of the DOFF pin on CY7C1618KV18-300BZXC?

The DOFF (DDR Off) pin selects read latency mode: when asserted high, it enables DDR II operation with 1.5-cycle read latency; when low, it reverts to DDR I–compatible 1-cycle latency. This allows system designers to trade off timing margin for performance or maintain backward compatibility with existing DDR I controllers without hardware changes.

How does the ZQ pin calibrate output drive strength?

ZQ connects to an external precision resistor (typically 240 Ω) tied to ground, enabling on-die calibration of DQ and CQ output driver impedance to 0.2 × RQ (e.g., 48 Ω). This compensates for process/voltage/temperature variations and ensures consistent signal integrity across the 18-bit bus at 666 MT/s, eliminating manual trace-length matching.

Can CY7C1618KV18-300BZXC operate with only K and K clocks, without C and C?

Yes - in single-clock mode, the device uses K and K for both input capture and output data timing. Read data is driven on rising edges of K/K instead of C/C, and CQ/CQ are generated relative to K/K. This reduces clock routing complexity but sacrifices flight-time deskew capability and limits maximum achievable system bandwidth.

What is the purpose of BWS[1:0] in byte-write operations?

BWS0 and BWS1 are active-low byte write select signals that gate 9-bit segments of the 18-bit DQ bus during writes. BWS0 enables D[8:0], BWS1 enables D[17:9]. When either is deasserted, corresponding bytes retain prior values - enabling efficient partial-word updates without read-modify-write cycles, critical for descriptor and metadata buffers.